JP2008177419A5 - - Google Patents

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Publication number
JP2008177419A5
JP2008177419A5 JP2007010476A JP2007010476A JP2008177419A5 JP 2008177419 A5 JP2008177419 A5 JP 2008177419A5 JP 2007010476 A JP2007010476 A JP 2007010476A JP 2007010476 A JP2007010476 A JP 2007010476A JP 2008177419 A5 JP2008177419 A5 JP 2008177419A5
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JP
Japan
Prior art keywords
supply unit
gas supply
deposition chamber
antenna
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007010476A
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English (en)
Japanese (ja)
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JP2008177419A (ja
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Publication date
Application filed filed Critical
Priority to JP2007010476A priority Critical patent/JP2008177419A/ja
Priority claimed from JP2007010476A external-priority patent/JP2008177419A/ja
Priority to US12/523,709 priority patent/US20100062585A1/en
Priority to KR1020097014968A priority patent/KR20090091819A/ko
Priority to CN2007800501126A priority patent/CN101632153B/zh
Priority to PCT/JP2007/070995 priority patent/WO2008087775A1/ja
Publication of JP2008177419A publication Critical patent/JP2008177419A/ja
Publication of JP2008177419A5 publication Critical patent/JP2008177419A5/ja
Pending legal-status Critical Current

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JP2007010476A 2007-01-19 2007-01-19 シリコン薄膜形成方法 Pending JP2008177419A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007010476A JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法
US12/523,709 US20100062585A1 (en) 2007-01-19 2007-10-29 Method for forming silicon thin film
KR1020097014968A KR20090091819A (ko) 2007-01-19 2007-10-29 실리콘 박막 형성방법
CN2007800501126A CN101632153B (zh) 2007-01-19 2007-10-29 硅薄膜形成方法
PCT/JP2007/070995 WO2008087775A1 (ja) 2007-01-19 2007-10-29 シリコン薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007010476A JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法

Publications (2)

Publication Number Publication Date
JP2008177419A JP2008177419A (ja) 2008-07-31
JP2008177419A5 true JP2008177419A5 (https=) 2009-07-16

Family

ID=39635781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007010476A Pending JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法

Country Status (5)

Country Link
US (1) US20100062585A1 (https=)
JP (1) JP2008177419A (https=)
KR (1) KR20090091819A (https=)
CN (1) CN101632153B (https=)
WO (1) WO2008087775A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法
WO2011080957A1 (ja) 2009-12-29 2011-07-07 シャープ株式会社 薄膜トランジスタ、その製造方法、および表示装置
JP5393895B2 (ja) * 2010-09-01 2014-01-22 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR102293862B1 (ko) 2014-09-15 2021-08-25 삼성전자주식회사 반도체 소자의 제조 방법
JP7200880B2 (ja) * 2019-08-19 2023-01-10 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100306527B1 (ko) * 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
JPH0851214A (ja) * 1994-08-05 1996-02-20 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US5952061A (en) * 1996-12-27 1999-09-14 Stanley Electric Co., Ltd. Fabrication and method of producing silicon films
KR100325500B1 (ko) * 1997-06-30 2002-02-25 모리시타 요이찌 반도체 박막의 제조 방법 및 그 장치
US20020060322A1 (en) * 2000-11-20 2002-05-23 Hiroshi Tanabe Thin film transistor having high mobility and high on-current and method for manufacturing the same
JP2002164290A (ja) * 2000-11-28 2002-06-07 Tokuyama Corp 多結晶シリコン膜の製造方法
KR100852266B1 (ko) * 2004-03-26 2008-08-14 닛신덴키 가부시키 가이샤 실리콘막 형성장치
JP4299717B2 (ja) * 2004-04-14 2009-07-22 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとその製造方法
JP4434115B2 (ja) * 2005-09-26 2010-03-17 日新電機株式会社 結晶性シリコン薄膜の形成方法及び装置
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法

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