JP2008177419A5 - - Google Patents

Download PDF

Info

Publication number
JP2008177419A5
JP2008177419A5 JP2007010476A JP2007010476A JP2008177419A5 JP 2008177419 A5 JP2008177419 A5 JP 2008177419A5 JP 2007010476 A JP2007010476 A JP 2007010476A JP 2007010476 A JP2007010476 A JP 2007010476A JP 2008177419 A5 JP2008177419 A5 JP 2008177419A5
Authority
JP
Japan
Prior art keywords
supply unit
gas supply
deposition chamber
antenna
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007010476A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008177419A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007010476A priority Critical patent/JP2008177419A/ja
Priority claimed from JP2007010476A external-priority patent/JP2008177419A/ja
Priority to PCT/JP2007/070995 priority patent/WO2008087775A1/ja
Priority to US12/523,709 priority patent/US20100062585A1/en
Priority to KR1020097014968A priority patent/KR20090091819A/ko
Priority to CN2007800501126A priority patent/CN101632153B/zh
Publication of JP2008177419A publication Critical patent/JP2008177419A/ja
Publication of JP2008177419A5 publication Critical patent/JP2008177419A5/ja
Pending legal-status Critical Current

Links

Images

JP2007010476A 2007-01-19 2007-01-19 シリコン薄膜形成方法 Pending JP2008177419A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007010476A JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法
PCT/JP2007/070995 WO2008087775A1 (ja) 2007-01-19 2007-10-29 シリコン薄膜形成方法
US12/523,709 US20100062585A1 (en) 2007-01-19 2007-10-29 Method for forming silicon thin film
KR1020097014968A KR20090091819A (ko) 2007-01-19 2007-10-29 실리콘 박막 형성방법
CN2007800501126A CN101632153B (zh) 2007-01-19 2007-10-29 硅薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007010476A JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法

Publications (2)

Publication Number Publication Date
JP2008177419A JP2008177419A (ja) 2008-07-31
JP2008177419A5 true JP2008177419A5 (https=) 2009-07-16

Family

ID=39635781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007010476A Pending JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法

Country Status (5)

Country Link
US (1) US20100062585A1 (https=)
JP (1) JP2008177419A (https=)
KR (1) KR20090091819A (https=)
CN (1) CN101632153B (https=)
WO (1) WO2008087775A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法
WO2011080957A1 (ja) 2009-12-29 2011-07-07 シャープ株式会社 薄膜トランジスタ、その製造方法、および表示装置
WO2012029661A1 (ja) * 2010-09-01 2012-03-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR102293862B1 (ko) 2014-09-15 2021-08-25 삼성전자주식회사 반도체 소자의 제조 방법
JP7200880B2 (ja) * 2019-08-19 2023-01-10 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100327086B1 (ko) * 1994-06-15 2002-03-06 구사마 사부로 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기
JPH0851214A (ja) * 1994-08-05 1996-02-20 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US5952061A (en) * 1996-12-27 1999-09-14 Stanley Electric Co., Ltd. Fabrication and method of producing silicon films
TW386249B (en) * 1997-06-30 2000-04-01 Matsushita Electric Industrial Co Ltd Method and device for manufacturing semiconductor thin film
US20020060322A1 (en) * 2000-11-20 2002-05-23 Hiroshi Tanabe Thin film transistor having high mobility and high on-current and method for manufacturing the same
JP2002164290A (ja) * 2000-11-28 2002-06-07 Tokuyama Corp 多結晶シリコン膜の製造方法
KR100852266B1 (ko) * 2004-03-26 2008-08-14 닛신덴키 가부시키 가이샤 실리콘막 형성장치
JP4299717B2 (ja) * 2004-04-14 2009-07-22 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとその製造方法
JP4434115B2 (ja) * 2005-09-26 2010-03-17 日新電機株式会社 結晶性シリコン薄膜の形成方法及び装置
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法

Similar Documents

Publication Publication Date Title
JP2008177419A5 (https=)
KR101314582B1 (ko) 원자층 성장 장치 및 박막 형성 방법
JP2010283336A5 (ja) 熱処理装置、半導体デバイスの製造方法および基板処理方法。
TW200745372A (en) Catalyst body chemical vapor phase growing apparatus
WO2021012672A1 (zh) 一种具有法拉第屏蔽装置的等离子体处理系统
MY167870A (en) Microwave plasma reactors and substrates for synthetic diamond manufacture
WO2008123060A1 (ja) 真空処理装置
MX355672B (es) Ensamble generador de aerosol con ensamble calentador.
TWD142850S1 (zh) 用於半導體沉積器械之電漿感應盤
ATE534171T1 (de) Sockel für koaxialverbindung 7-16
TW200711029A (en) Substrate processing apparatus and substrate stage used therein
JP2012515451A5 (https=)
JP2012007239A5 (https=)
JP2013243267A5 (https=)
MY166639A (en) A microwave plasma reactor for manufacturing synthetic diamond material
JP2011071498A5 (ja) 半導体装置の作製方法
JP2015501546A5 (https=)
WO2008039465A3 (en) Method for removing surface deposits in the interior of a chemical vapor deposition reactor
WO2008093442A1 (ja) ガス処理装置
JP2008124111A5 (https=)
MY210440A (en) Dlc preparation apparatus and preparation method
JP5992288B2 (ja) ガス導入装置及び誘導結合プラズマ処理装置
CN106115879A (zh) 一种对液体活化的等离子体发生装置
TW201129501A (en) Manufacturing apparatus for depositing a material and an electrode for use therein
WO2006041634A3 (en) Method and apparatus to improve plasma etch uniformity