JP2008147632A5 - - Google Patents

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Publication number
JP2008147632A5
JP2008147632A5 JP2007290164A JP2007290164A JP2008147632A5 JP 2008147632 A5 JP2008147632 A5 JP 2008147632A5 JP 2007290164 A JP2007290164 A JP 2007290164A JP 2007290164 A JP2007290164 A JP 2007290164A JP 2008147632 A5 JP2008147632 A5 JP 2008147632A5
Authority
JP
Japan
Prior art keywords
film
organic ferroelectric
forming
crystallinity
ferroelectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007290164A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008147632A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007290164A priority Critical patent/JP2008147632A/ja
Priority claimed from JP2007290164A external-priority patent/JP2008147632A/ja
Priority to US11/937,197 priority patent/US20080135900A1/en
Priority to KR1020070114744A priority patent/KR20080043239A/ko
Publication of JP2008147632A publication Critical patent/JP2008147632A/ja
Priority to US12/578,481 priority patent/US20100022032A1/en
Publication of JP2008147632A5 publication Critical patent/JP2008147632A5/ja
Withdrawn legal-status Critical Current

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JP2007290164A 2006-11-13 2007-11-07 有機強誘電体膜の形成方法、記憶素子の製造方法、記憶装置、および電子機器 Withdrawn JP2008147632A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007290164A JP2008147632A (ja) 2006-11-13 2007-11-07 有機強誘電体膜の形成方法、記憶素子の製造方法、記憶装置、および電子機器
US11/937,197 US20080135900A1 (en) 2006-11-13 2007-11-08 Method of forming organic ferroelectric film, method of manufacturing memory element, memory device, and electronic apparatus
KR1020070114744A KR20080043239A (ko) 2006-11-13 2007-11-12 유기 강유전체막의 형성 방법, 기억 소자의 제조 방법,기억 장치, 및 전자 기기
US12/578,481 US20100022032A1 (en) 2006-11-13 2009-10-13 Method of forming organic ferroelectric film, method of manufacturing memory element, memory device, and electronic apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006307153 2006-11-13
JP2007290164A JP2008147632A (ja) 2006-11-13 2007-11-07 有機強誘電体膜の形成方法、記憶素子の製造方法、記憶装置、および電子機器

Publications (2)

Publication Number Publication Date
JP2008147632A JP2008147632A (ja) 2008-06-26
JP2008147632A5 true JP2008147632A5 (enExample) 2010-11-18

Family

ID=39480511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007290164A Withdrawn JP2008147632A (ja) 2006-11-13 2007-11-07 有機強誘電体膜の形成方法、記憶素子の製造方法、記憶装置、および電子機器

Country Status (3)

Country Link
JP (1) JP2008147632A (enExample)
KR (1) KR20080043239A (enExample)
CN (1) CN101188198A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5957648B2 (ja) * 2009-09-14 2016-07-27 株式会社イデアルスター フッ化ビニリデンと、トリフルオロエチレン又はテトラフルオロエチレンとの共重合体とフラーレンとの混合膜及びその製造方法
JP2011159848A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 固体撮像装置およびその製造方法
KR101276560B1 (ko) * 2011-03-17 2013-06-24 한국과학기술원 강유전체 폴리머 나노도트 소자 및 그 제조를 위한 디웨팅 프로세스
JP5926903B2 (ja) * 2011-08-22 2016-05-25 株式会社クレハ 所望のキュリー温度を有するポリマーの製造方法
US9293257B2 (en) 2011-11-09 2016-03-22 Japan Science And Technology Agency Solid-state electronic device including dielectric bismuth niobate film formed from solution
KR102043488B1 (ko) * 2013-03-14 2019-11-11 사우디 베이식 인더스트리즈 코포레이션 개선된 피로 및 항복 특성을 동반하는 강유전성 축전기
JP6229532B2 (ja) * 2014-02-21 2017-11-15 国立研究開発法人産業技術総合研究所 有機強誘電体薄膜の製造方法
JP2016171152A (ja) * 2015-03-12 2016-09-23 ペクセル・テクノロジーズ株式会社 ペロブスカイト化合物を用いた強誘電体メモリ素子およびその製造方法

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