JP2008131050A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008131050A5 JP2008131050A5 JP2007299433A JP2007299433A JP2008131050A5 JP 2008131050 A5 JP2008131050 A5 JP 2008131050A5 JP 2007299433 A JP2007299433 A JP 2007299433A JP 2007299433 A JP2007299433 A JP 2007299433A JP 2008131050 A5 JP2008131050 A5 JP 2008131050A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- containing film
- substrate
- film
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 37
- 229910052751 metal Inorganic materials 0.000 claims 29
- 239000002184 metal Substances 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 24
- 239000007789 gas Substances 0.000 claims 12
- 229910052721 tungsten Inorganic materials 0.000 claims 10
- 238000000151 deposition Methods 0.000 claims 9
- 239000000203 mixture Substances 0.000 claims 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 8
- 239000010937 tungsten Substances 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 7
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- 239000002243 precursor Substances 0.000 claims 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 3
- 229910004129 HfSiO Inorganic materials 0.000 claims 3
- -1 HfSiON Inorganic materials 0.000 claims 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000003672 processing method Methods 0.000 claims 2
- 229910052702 rhenium Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910004200 TaSiN Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/561,810 US7674710B2 (en) | 2006-11-20 | 2006-11-20 | Method of integrating metal-containing films into semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008131050A JP2008131050A (ja) | 2008-06-05 |
| JP2008131050A5 true JP2008131050A5 (enExample) | 2010-12-24 |
Family
ID=39417437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007299433A Pending JP2008131050A (ja) | 2006-11-20 | 2007-11-19 | 半導体素子への金属含有膜の集積方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7674710B2 (enExample) |
| JP (1) | JP2008131050A (enExample) |
| KR (1) | KR20080045652A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009142251A1 (ja) | 2008-05-19 | 2009-11-26 | 日本電気株式会社 | 二次電池 |
| CN102112649A (zh) * | 2008-08-05 | 2011-06-29 | 东京毅力科创株式会社 | 载置台构造 |
| US8866271B2 (en) * | 2010-10-07 | 2014-10-21 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device |
| WO2012066977A1 (ja) * | 2010-11-19 | 2012-05-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| JP2013084902A (ja) * | 2011-09-26 | 2013-05-09 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
| KR20140003154A (ko) * | 2012-06-29 | 2014-01-09 | 에스케이하이닉스 주식회사 | 반도체 장치 제조 방법 |
| US11043386B2 (en) | 2012-10-26 | 2021-06-22 | Applied Materials, Inc. | Enhanced spatial ALD of metals through controlled precursor mixing |
| US9230815B2 (en) * | 2012-10-26 | 2016-01-05 | Appled Materials, Inc. | Methods for depositing fluorine/carbon-free conformal tungsten |
| JP6308584B2 (ja) * | 2013-02-28 | 2018-04-11 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、基板処理システム及びプログラム |
| US11761081B2 (en) * | 2018-10-10 | 2023-09-19 | Entegris, Inc. | Methods for depositing tungsten or molybdenum films |
| KR20230052933A (ko) * | 2020-09-23 | 2023-04-20 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02225670A (ja) * | 1989-02-23 | 1990-09-07 | Toyota Motor Corp | Ｃｖｄ法による金属薄膜の成膜方法 |
| JPH0427136A (ja) * | 1990-04-11 | 1992-01-30 | Mitsubishi Electric Corp | 有機金属ガス利用薄膜形成装置 |
| JP2726149B2 (ja) * | 1990-11-02 | 1998-03-11 | 三菱電機株式会社 | 薄膜形成装置 |
| US5789312A (en) * | 1996-10-30 | 1998-08-04 | International Business Machines Corporation | Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics |
| US6218301B1 (en) * | 2000-07-31 | 2001-04-17 | Applied Materials, Inc. | Deposition of tungsten films from W(CO)6 |
| JP3786569B2 (ja) * | 2000-08-14 | 2006-06-14 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US20020132473A1 (en) * | 2001-03-13 | 2002-09-19 | Applied Materials ,Inc. | Integrated barrier layer structure for copper contact level metallization |
| JP4126219B2 (ja) * | 2002-11-06 | 2008-07-30 | 東京エレクトロン株式会社 | 成膜方法 |
| JP2005243664A (ja) * | 2004-02-24 | 2005-09-08 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US7189431B2 (en) * | 2004-09-30 | 2007-03-13 | Tokyo Electron Limited | Method for forming a passivated metal layer |
| JP4372021B2 (ja) * | 2005-01-28 | 2009-11-25 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2006257551A (ja) * | 2005-03-15 | 2006-09-28 | Asm Internatl Nv | Ａｌｄによる貴金属の促進された堆積 |
-
2006
- 2006-11-20 US US11/561,810 patent/US7674710B2/en not_active Expired - Fee Related
-
2007
- 2007-11-19 JP JP2007299433A patent/JP2008131050A/ja active Pending
- 2007-11-20 KR KR1020070118450A patent/KR20080045652A/ko not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008131050A5 (enExample) | ||
| CN104051250B (zh) | 金属薄膜的硅烷或硼烷处理 | |
| KR101990051B1 (ko) | 무불소텅스텐 배리어층을 구비한 반도체장치 및 그 제조 방법 | |
| TWI661080B (zh) | 金屬矽化物的選擇性形成 | |
| JP5419694B2 (ja) | 歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成 | |
| JP2010505274A5 (enExample) | ||
| JP2008131050A (ja) | 半導体素子への金属含有膜の集積方法 | |
| JP2002314076A (ja) | 金属ゲートの形成方法 | |
| JP2018059182A5 (enExample) | ||
| TW201727719A (zh) | 製造半導體裝置中的閘極結構的方法 | |
| JP2005029821A (ja) | 成膜方法 | |
| US6893927B1 (en) | Method for making a semiconductor device with a metal gate electrode | |
| CN102044442B (zh) | 一种改善高介电常数栅介质界面特性的方法 | |
| JP2011166160A (ja) | 積層膜の形成方法 | |
| CN1914736A (zh) | 半导体装置 | |
| KR100634163B1 (ko) | 금속 게이트 전극을 구비하는 반도체 소자의 형성 방법 | |
| JP5088773B2 (ja) | 膜形成方法および膜形成材料 | |
| JPWO2004093179A1 (ja) | 高誘電体膜の形成方法 | |
| JP2010267678A (ja) | 半導体装置の製造方法 | |
| WO2007018235A1 (ja) | Ｗ系膜の成膜方法、ゲート電極の形成方法、および半導体装置の製造方法 | |
| JP7607801B2 (ja) | アモルファスシリコンベース取り除きおよびシールｅｏｔ | |
| JP5039396B2 (ja) | 半導体装置の製造方法 | |
| TWI329340B (en) | Method for manufacturing semiconductor device | |
| JP2005005589A (ja) | 窒化膜の膜質改善方法、及び半導体装置の製造方法 | |
| JP2006086151A (ja) | 半導体装置の製造方法 |