JP2008124111A - プラズマｃｖｄ法によるシリコン系薄膜の形成方法 - Google Patents

プラズマｃｖｄ法によるシリコン系薄膜の形成方法 Download PDF

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Publication number
JP2008124111A
JP2008124111A JP2006303676A JP2006303676A JP2008124111A JP 2008124111 A JP2008124111 A JP 2008124111A JP 2006303676 A JP2006303676 A JP 2006303676A JP 2006303676 A JP2006303676 A JP 2006303676A JP 2008124111 A JP2008124111 A JP 2008124111A
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JP
Japan
Prior art keywords
film
thin film
silicon
gas
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006303676A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008124111A5 (https=
Inventor
Kenji Kato
健治 加藤
Eiji Takahashi
英治 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP2006303676A priority Critical patent/JP2008124111A/ja
Priority to CN2007800416922A priority patent/CN101558473B/zh
Priority to KR1020097009525A priority patent/KR20090066317A/ko
Priority to PCT/JP2007/070994 priority patent/WO2008056557A1/ja
Priority to US12/513,362 priority patent/US20100210093A1/en
Priority to TW097103750A priority patent/TW200932942A/zh
Publication of JP2008124111A publication Critical patent/JP2008124111A/ja
Publication of JP2008124111A5 publication Critical patent/JP2008124111A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP2006303676A 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法 Pending JP2008124111A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006303676A JP2008124111A (ja) 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法
CN2007800416922A CN101558473B (zh) 2006-11-09 2007-10-29 利用等离子体cvd法的硅系薄膜的形成方法
KR1020097009525A KR20090066317A (ko) 2006-11-09 2007-10-29 플라즈마 ｃｖｄ법에 의한 실리콘계 박막의 형성방법
PCT/JP2007/070994 WO2008056557A1 (en) 2006-11-09 2007-10-29 Method for forming silicon based thin film by plasma cvd method
US12/513,362 US20100210093A1 (en) 2006-11-09 2007-10-29 Method for forming silicon-based thin film by plasma cvd method
TW097103750A TW200932942A (en) 2006-11-09 2008-01-31 Method for forming silicon thin film by plasma cvd method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006303676A JP2008124111A (ja) 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法

Publications (2)

Publication Number Publication Date
JP2008124111A true JP2008124111A (ja) 2008-05-29
JP2008124111A5 JP2008124111A5 (https=) 2009-05-21

Family

ID=39364377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006303676A Pending JP2008124111A (ja) 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法

Country Status (6)

Country Link
US (1) US20100210093A1 (https=)
JP (1) JP2008124111A (https=)
KR (1) KR20090066317A (https=)
CN (1) CN101558473B (https=)
TW (1) TW200932942A (https=)
WO (1) WO2008056557A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019165177A (ja) * 2018-03-20 2019-09-26 日新電機株式会社 成膜方法
JP2020518136A (ja) * 2017-04-27 2020-06-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ３ｄ ｎａｎｄに適用するための低誘電率酸化物および低抵抗のｏｐスタック

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177419A (ja) * 2007-01-19 2008-07-31 Nissin Electric Co Ltd シリコン薄膜形成方法
US9028924B2 (en) 2010-03-25 2015-05-12 Novellus Systems, Inc. In-situ deposition of film stacks
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US8709551B2 (en) * 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US9165788B2 (en) 2012-04-06 2015-10-20 Novellus Systems, Inc. Post-deposition soft annealing
US9117668B2 (en) 2012-05-23 2015-08-25 Novellus Systems, Inc. PECVD deposition of smooth silicon films
US9388491B2 (en) 2012-07-23 2016-07-12 Novellus Systems, Inc. Method for deposition of conformal films with catalysis assisted low temperature CVD
US8895415B1 (en) 2013-05-31 2014-11-25 Novellus Systems, Inc. Tensile stressed doped amorphous silicon
JP2017092142A (ja) * 2015-11-05 2017-05-25 東京エレクトロン株式会社 被処理体を処理する方法
US20170294314A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993002468A1 (fr) * 1991-07-16 1993-02-04 Seiko Epson Corporation Appareil de deposition en phase vapeur par procede chimique, procede de formation de films semi-conducteurs et procede de production de dispositifs semi-conducteurs a mince film
JP2001223208A (ja) * 2000-02-08 2001-08-17 Seiko Epson Corp 半導体素子製造装置および半導体素子の製造方法
JP2004056062A (ja) * 2002-05-29 2004-02-19 Kyocera Corp Ｃａｔ−ＰＥＣＶＤ法、それを用いて形成した膜、およびその膜を備えた薄膜デバイス

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469134B1 (ko) * 1996-03-18 2005-09-02 비오이 하이디스 테크놀로지 주식회사 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터
JP2001316818A (ja) * 2000-02-29 2001-11-16 Canon Inc 膜形成方法及び形成装置、並びにシリコン系膜、起電力素子及びそれを用いた太陽電池、センサー及び撮像素子
JP2003068643A (ja) * 2001-08-23 2003-03-07 Japan Advanced Inst Of Science & Technology Hokuriku 結晶性シリコン膜の作製方法及び太陽電池
US7186663B2 (en) * 2004-03-15 2007-03-06 Sharp Laboratories Of America, Inc. High density plasma process for silicon thin films
JP4474596B2 (ja) * 2003-08-29 2010-06-09 キヤノンアネルバ株式会社 シリコンナノ結晶構造体の形成方法及び形成装置
JP4434115B2 (ja) * 2005-09-26 2010-03-17 日新電機株式会社 結晶性シリコン薄膜の形成方法及び装置
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP2008177419A (ja) * 2007-01-19 2008-07-31 Nissin Electric Co Ltd シリコン薄膜形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993002468A1 (fr) * 1991-07-16 1993-02-04 Seiko Epson Corporation Appareil de deposition en phase vapeur par procede chimique, procede de formation de films semi-conducteurs et procede de production de dispositifs semi-conducteurs a mince film
JP2001223208A (ja) * 2000-02-08 2001-08-17 Seiko Epson Corp 半導体素子製造装置および半導体素子の製造方法
JP2004056062A (ja) * 2002-05-29 2004-02-19 Kyocera Corp Ｃａｔ−ＰＥＣＶＤ法、それを用いて形成した膜、およびその膜を備えた薄膜デバイス

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020518136A (ja) * 2017-04-27 2020-06-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ３ｄ ｎａｎｄに適用するための低誘電率酸化物および低抵抗のｏｐスタック
JP7211969B2 (ja) 2017-04-27 2023-01-24 アプライド マテリアルズ インコーポレイテッド ３ｄ ｎａｎｄに適用するための低誘電率酸化物および低抵抗のｏｐスタック
JP2019165177A (ja) * 2018-03-20 2019-09-26 日新電機株式会社 成膜方法
JP7028001B2 (ja) 2018-03-20 2022-03-02 日新電機株式会社 成膜方法

Also Published As

Publication number Publication date
KR20090066317A (ko) 2009-06-23
CN101558473B (zh) 2012-02-29
WO2008056557A1 (en) 2008-05-15
TW200932942A (en) 2009-08-01
CN101558473A (zh) 2009-10-14
US20100210093A1 (en) 2010-08-19

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