TW200932942A - Method for forming silicon thin film by plasma cvd method - Google Patents

Method for forming silicon thin film by plasma cvd method Download PDF

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Publication number
TW200932942A
TW200932942A TW097103750A TW97103750A TW200932942A TW 200932942 A TW200932942 A TW 200932942A TW 097103750 A TW097103750 A TW 097103750A TW 97103750 A TW97103750 A TW 97103750A TW 200932942 A TW200932942 A TW 200932942A
Authority
TW
Taiwan
Prior art keywords
film
gas
ruthenium
plasma
forming
Prior art date
Application number
TW097103750A
Other languages
English (en)
Chinese (zh)
Inventor
Kenji Kato
Eiji Takahashi
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of TW200932942A publication Critical patent/TW200932942A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
TW097103750A 2006-11-09 2008-01-31 Method for forming silicon thin film by plasma cvd method TW200932942A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006303676A JP2008124111A (ja) 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法
PCT/JP2007/070994 WO2008056557A1 (en) 2006-11-09 2007-10-29 Method for forming silicon based thin film by plasma cvd method

Publications (1)

Publication Number Publication Date
TW200932942A true TW200932942A (en) 2009-08-01

Family

ID=39364377

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097103750A TW200932942A (en) 2006-11-09 2008-01-31 Method for forming silicon thin film by plasma cvd method

Country Status (6)

Country Link
US (1) US20100210093A1 (https=)
JP (1) JP2008124111A (https=)
KR (1) KR20090066317A (https=)
CN (1) CN101558473B (https=)
TW (1) TW200932942A (https=)
WO (1) WO2008056557A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI694481B (zh) * 2015-11-05 2020-05-21 日商東京威力科創股份有限公司 處理被處理體之方法
TWI826349B (zh) * 2016-04-11 2023-12-21 美商普雷瑟科技股份有限公司 適於離子植入以產生含鍺之離子束電流的鍺組成物

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177419A (ja) * 2007-01-19 2008-07-31 Nissin Electric Co Ltd シリコン薄膜形成方法
US9028924B2 (en) 2010-03-25 2015-05-12 Novellus Systems, Inc. In-situ deposition of film stacks
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US8709551B2 (en) * 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US9165788B2 (en) 2012-04-06 2015-10-20 Novellus Systems, Inc. Post-deposition soft annealing
US9117668B2 (en) 2012-05-23 2015-08-25 Novellus Systems, Inc. PECVD deposition of smooth silicon films
US9388491B2 (en) 2012-07-23 2016-07-12 Novellus Systems, Inc. Method for deposition of conformal films with catalysis assisted low temperature CVD
US8895415B1 (en) 2013-05-31 2014-11-25 Novellus Systems, Inc. Tensile stressed doped amorphous silicon
JP7211969B2 (ja) * 2017-04-27 2023-01-24 アプライド マテリアルズ インコーポレイテッド ３ｄ ｎａｎｄに適用するための低誘電率酸化物および低抵抗のｏｐスタック
JP7028001B2 (ja) * 2018-03-20 2022-03-02 日新電機株式会社 成膜方法

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EP0552375B1 (en) * 1991-07-16 2004-06-02 Seiko Epson Corporation Method of forming a semiconductor film with a chemical vapor deposition apparatus
KR100469134B1 (ko) * 1996-03-18 2005-09-02 비오이 하이디스 테크놀로지 주식회사 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터
JP3680677B2 (ja) * 2000-02-08 2005-08-10 セイコーエプソン株式会社 半導体素子製造装置および半導体素子の製造方法
JP2001316818A (ja) * 2000-02-29 2001-11-16 Canon Inc 膜形成方法及び形成装置、並びにシリコン系膜、起電力素子及びそれを用いた太陽電池、センサー及び撮像素子
JP2003068643A (ja) * 2001-08-23 2003-03-07 Japan Advanced Inst Of Science & Technology Hokuriku 結晶性シリコン膜の作製方法及び太陽電池
JP3894862B2 (ja) * 2002-05-29 2007-03-22 京セラ株式会社 Ｃａｔ−ＰＥＣＶＤ法
US7186663B2 (en) * 2004-03-15 2007-03-06 Sharp Laboratories Of America, Inc. High density plasma process for silicon thin films
JP4474596B2 (ja) * 2003-08-29 2010-06-09 キヤノンアネルバ株式会社 シリコンナノ結晶構造体の形成方法及び形成装置
JP4434115B2 (ja) * 2005-09-26 2010-03-17 日新電機株式会社 結晶性シリコン薄膜の形成方法及び装置
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP2008177419A (ja) * 2007-01-19 2008-07-31 Nissin Electric Co Ltd シリコン薄膜形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI694481B (zh) * 2015-11-05 2020-05-21 日商東京威力科創股份有限公司 處理被處理體之方法
TWI826349B (zh) * 2016-04-11 2023-12-21 美商普雷瑟科技股份有限公司 適於離子植入以產生含鍺之離子束電流的鍺組成物

Also Published As

Publication number Publication date
KR20090066317A (ko) 2009-06-23
CN101558473B (zh) 2012-02-29
WO2008056557A1 (en) 2008-05-15
CN101558473A (zh) 2009-10-14
JP2008124111A (ja) 2008-05-29
US20100210093A1 (en) 2010-08-19

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