JP2008103028A5 - - Google Patents

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Publication number
JP2008103028A5
JP2008103028A5 JP2006285015A JP2006285015A JP2008103028A5 JP 2008103028 A5 JP2008103028 A5 JP 2008103028A5 JP 2006285015 A JP2006285015 A JP 2006285015A JP 2006285015 A JP2006285015 A JP 2006285015A JP 2008103028 A5 JP2008103028 A5 JP 2008103028A5
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JP
Japan
Prior art keywords
storage node
transistor
semiconductor memory
memory device
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006285015A
Other languages
English (en)
Japanese (ja)
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JP2008103028A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006285015A priority Critical patent/JP2008103028A/ja
Priority claimed from JP2006285015A external-priority patent/JP2008103028A/ja
Priority to US11/826,246 priority patent/US7589991B2/en
Priority to CNA2007101419953A priority patent/CN101165806A/zh
Publication of JP2008103028A publication Critical patent/JP2008103028A/ja
Publication of JP2008103028A5 publication Critical patent/JP2008103028A5/ja
Withdrawn legal-status Critical Current

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JP2006285015A 2006-10-19 2006-10-19 半導体記憶装置 Withdrawn JP2008103028A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006285015A JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置
US11/826,246 US7589991B2 (en) 2006-10-19 2007-07-13 Semiconductor memory device
CNA2007101419953A CN101165806A (zh) 2006-10-19 2007-08-17 半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006285015A JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2008103028A JP2008103028A (ja) 2008-05-01
JP2008103028A5 true JP2008103028A5 (https=) 2009-11-12

Family

ID=39317727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006285015A Withdrawn JP2008103028A (ja) 2006-10-19 2006-10-19 半導体記憶装置

Country Status (3)

Country Link
US (1) US7589991B2 (https=)
JP (1) JP2008103028A (https=)
CN (1) CN101165806A (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4353393B2 (ja) 2001-06-05 2009-10-28 株式会社ルネサステクノロジ 半導体集積回路装置
US7619947B2 (en) * 2007-10-31 2009-11-17 Texas Instruments Incorporated Integrated circuit having a supply voltage controller capable of floating a variable supply voltage
JP5417952B2 (ja) * 2009-04-08 2014-02-19 富士通セミコンダクター株式会社 半導体メモリおよびシステム
CN101877243B (zh) * 2010-04-22 2015-09-30 上海华虹宏力半导体制造有限公司 静态随机存取存储器
CN101819815B (zh) * 2010-04-29 2015-05-20 上海华虹宏力半导体制造有限公司 一种消除读取干扰的静态随机存储器
JP2011248932A (ja) 2010-05-21 2011-12-08 Panasonic Corp 半導体記憶装置
US8462542B2 (en) * 2010-06-24 2013-06-11 Texas Instruments Incorporated Bit-by-bit write assist for solid-state memory
US8305798B2 (en) * 2010-07-13 2012-11-06 Texas Instruments Incorporated Memory cell with equalization write assist in solid-state memory
CN103137187B (zh) * 2011-11-28 2015-12-09 上海华虹宏力半导体制造有限公司 一种sram的旁路结构
KR20140092537A (ko) * 2013-01-16 2014-07-24 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치
JP5641116B2 (ja) * 2013-09-18 2014-12-17 富士通セミコンダクター株式会社 半導体メモリおよびシステム
US9928886B2 (en) * 2016-06-23 2018-03-27 Chih-Cheng Hsiao Low power memory device
JP6984166B2 (ja) * 2017-05-16 2021-12-17 富士通株式会社 記憶回路及び記憶回路の制御方法
KR102755896B1 (ko) * 2023-04-14 2025-01-21 서울대학교산학협력단 랜덤 액세스 메모리 및 그 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1202530C (zh) * 1998-04-01 2005-05-18 三菱电机株式会社 在低电源电压下高速动作的静态型半导体存储装置
JP2001143476A (ja) * 1999-11-15 2001-05-25 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP2002042476A (ja) 2000-07-25 2002-02-08 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6618289B2 (en) * 2001-10-29 2003-09-09 Atmel Corporation High voltage bit/column latch for Vcc operation
US20030190771A1 (en) * 2002-03-07 2003-10-09 02Ic, Ltd. Integrated ram and non-volatile memory cell method and structure
JP4162076B2 (ja) * 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
JP2004055099A (ja) * 2002-07-24 2004-02-19 Renesas Technology Corp 差動増幅回路およびそれを用いた半導体記憶装置
US6992916B2 (en) * 2003-06-13 2006-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell design with high resistor CMOS gate structure for soft error rate improvement
JP2006012968A (ja) * 2004-06-23 2006-01-12 Nec Electronics Corp 半導体集積回路装置及びその設計方法
US7161827B2 (en) * 2005-01-12 2007-01-09 Freescale Semiconductor, Inc. SRAM having improved cell stability and method therefor
US7164596B1 (en) * 2005-07-28 2007-01-16 Texas Instruments Incorporated SRAM cell with column select line
US7289354B2 (en) * 2005-07-28 2007-10-30 Texas Instruments Incorporated Memory array with a delayed wordline boost

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