JP2010287287A5 - - Google Patents

Download PDF

Info

Publication number
JP2010287287A5
JP2010287287A5 JP2009141059A JP2009141059A JP2010287287A5 JP 2010287287 A5 JP2010287287 A5 JP 2010287287A5 JP 2009141059 A JP2009141059 A JP 2009141059A JP 2009141059 A JP2009141059 A JP 2009141059A JP 2010287287 A5 JP2010287287 A5 JP 2010287287A5
Authority
JP
Japan
Prior art keywords
power supply
memory cell
supply voltage
bit line
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009141059A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010287287A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009141059A priority Critical patent/JP2010287287A/ja
Priority claimed from JP2009141059A external-priority patent/JP2010287287A/ja
Publication of JP2010287287A publication Critical patent/JP2010287287A/ja
Publication of JP2010287287A5 publication Critical patent/JP2010287287A5/ja
Pending legal-status Critical Current

Links

JP2009141059A 2009-06-12 2009-06-12 半導体装置 Pending JP2010287287A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009141059A JP2010287287A (ja) 2009-06-12 2009-06-12 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009141059A JP2010287287A (ja) 2009-06-12 2009-06-12 半導体装置

Publications (2)

Publication Number Publication Date
JP2010287287A JP2010287287A (ja) 2010-12-24
JP2010287287A5 true JP2010287287A5 (https=) 2012-04-12

Family

ID=43542865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009141059A Pending JP2010287287A (ja) 2009-06-12 2009-06-12 半導体装置

Country Status (1)

Country Link
JP (1) JP2010287287A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5867091B2 (ja) * 2012-01-10 2016-02-24 株式会社ソシオネクスト 半導体記憶装置及びその書き込み方法
JP5962185B2 (ja) * 2012-04-27 2016-08-03 株式会社ソシオネクスト 半導体記憶装置およびその制御方法
JP7588858B2 (ja) * 2019-03-14 2024-11-25 ゼナージック エービー 面積効率の良いデュアルポート及びマルチポートｓｒａｍ、ｓｒａｍのための面積効率の良いメモリセル
CN111668232B (zh) * 2020-06-19 2023-04-07 成都华微电子科技股份有限公司 集成电路芯片
JP7254060B2 (ja) * 2020-12-28 2023-04-07 合肥晶合集成電路股▲ふん▼有限公司 半導体メモリ装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58211391A (ja) * 1982-05-31 1983-12-08 Toshiba Corp 半導体記憶装置
JPH05109283A (ja) * 1991-10-15 1993-04-30 Hitachi Ltd 低消費電力半導体記憶装置
JPH0883490A (ja) * 1994-09-13 1996-03-26 Fujitsu Ltd 半導体記憶装置
JP2002368135A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体記憶装置
US7164596B1 (en) * 2005-07-28 2007-01-16 Texas Instruments Incorporated SRAM cell with column select line
JP5165992B2 (ja) * 2007-10-17 2013-03-21 ルネサスエレクトロニクス株式会社 半導体装置

Similar Documents

Publication Publication Date Title
US10254817B2 (en) Memory system
JP2010510615A5 (https=)
JP2007234126A5 (https=)
JP2005243059A5 (https=)
WO2007134281A3 (en) Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
CN107272867A (zh) 电子设备及改变其供电电压的方法
JP2012104110A5 (https=)
JP2011028741A5 (https=)
JP2015195075A5 (https=)
JP2010287287A5 (https=)
JP2009545834A5 (https=)
JP2010536115A5 (https=)
CN108958639A (zh) 快闪存储器存储装置
Kim et al. LL-PCM: Low-latency phase change memory architecture
JP2007143151A5 (https=)
JP2006073165A5 (https=)
US20110032783A1 (en) Semiconductor storage apparatus, and method and system for boosting word lines
JP2004319065A5 (https=)
JP2016033842A5 (https=)
KR20180007288A (ko) 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
JP2013131278A5 (https=)
CN101872642A (zh) 随机存储器的存储读取方法
JP2009289014A5 (https=)
CN1881468A (zh) 掉电模式期间保持数据的存储设备及其操作方法
CN105096998B (zh) 运用于存储器编译器的存储器生成方法与生成的存储器