JP2013131278A5 - - Google Patents

Download PDF

Info

Publication number
JP2013131278A5
JP2013131278A5 JP2011281929A JP2011281929A JP2013131278A5 JP 2013131278 A5 JP2013131278 A5 JP 2013131278A5 JP 2011281929 A JP2011281929 A JP 2011281929A JP 2011281929 A JP2011281929 A JP 2011281929A JP 2013131278 A5 JP2013131278 A5 JP 2013131278A5
Authority
JP
Japan
Prior art keywords
input
lines
signal
line
signal lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011281929A
Other languages
English (en)
Japanese (ja)
Other versions
JP5988574B2 (ja
JP2013131278A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011281929A priority Critical patent/JP5988574B2/ja
Priority claimed from JP2011281929A external-priority patent/JP5988574B2/ja
Priority to US13/712,434 priority patent/US8861299B2/en
Publication of JP2013131278A publication Critical patent/JP2013131278A/ja
Priority to US14/487,379 priority patent/US9208831B2/en
Publication of JP2013131278A5 publication Critical patent/JP2013131278A5/ja
Application granted granted Critical
Publication of JP5988574B2 publication Critical patent/JP5988574B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011281929A 2011-12-22 2011-12-22 半導体記憶装置 Active JP5988574B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011281929A JP5988574B2 (ja) 2011-12-22 2011-12-22 半導体記憶装置
US13/712,434 US8861299B2 (en) 2011-12-22 2012-12-12 Semiconductor memory device
US14/487,379 US9208831B2 (en) 2011-12-22 2014-09-16 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011281929A JP5988574B2 (ja) 2011-12-22 2011-12-22 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2013131278A JP2013131278A (ja) 2013-07-04
JP2013131278A5 true JP2013131278A5 (https=) 2014-12-18
JP5988574B2 JP5988574B2 (ja) 2016-09-07

Family

ID=48654408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011281929A Active JP5988574B2 (ja) 2011-12-22 2011-12-22 半導体記憶装置

Country Status (2)

Country Link
US (2) US8861299B2 (https=)
JP (1) JP5988574B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5988574B2 (ja) * 2011-12-22 2016-09-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置
US9350324B2 (en) * 2012-12-27 2016-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. MCML retention flip-flop/latch for low power applications
JP2014149884A (ja) 2013-01-31 2014-08-21 Micron Technology Inc 半導体装置
US10665282B2 (en) * 2015-05-15 2020-05-26 Tohoku University Memory circuit provided with variable-resistance element
KR102620562B1 (ko) 2016-08-04 2024-01-03 삼성전자주식회사 비휘발성 메모리 장치
US11017838B2 (en) 2016-08-04 2021-05-25 Samsung Electronics Co., Ltd. Nonvolatile memory devices
JP7677611B2 (ja) 2021-03-03 2025-05-15 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940785A (en) * 1996-04-29 1999-08-17 International Business Machines Corporation Performance-temperature optimization by cooperatively varying the voltage and frequency of a circuit
US5991221A (en) * 1998-01-30 1999-11-23 Hitachi, Ltd. Microcomputer and microprocessor having flash memory operable from single external power supply
JP2002117673A (ja) 2000-10-03 2002-04-19 Hitachi Ltd 半導体記憶装置
JP4827298B2 (ja) * 2001-01-22 2011-11-30 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4392740B2 (ja) * 2001-08-30 2010-01-06 株式会社ルネサステクノロジ 半導体記憶回路
US6646942B2 (en) * 2001-10-09 2003-11-11 Micron Technology, Inc. Method and circuit for adjusting a self-refresh rate to maintain dynamic data at low supply voltages
KR100426443B1 (ko) * 2002-06-29 2004-04-13 주식회사 하이닉스반도체 딥 파워다운 제어 회로
US7031219B2 (en) * 2004-06-04 2006-04-18 Etron Technology, Inc. Internal power management scheme for a memory chip in deep power down mode
KR100753048B1 (ko) * 2005-09-05 2007-08-30 주식회사 하이닉스반도체 반도체 메모리 장치의 주변영역 전압 발생 장치
JP2009009680A (ja) * 2007-05-25 2009-01-15 Nec Electronics Corp 半導体装置
KR101090469B1 (ko) * 2009-07-31 2011-12-06 주식회사 하이닉스반도체 데이터제어회로
JP2012038389A (ja) * 2010-08-09 2012-02-23 Elpida Memory Inc 半導体装置
JP5988574B2 (ja) * 2011-12-22 2016-09-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置

Similar Documents

Publication Publication Date Title
JP2013131278A5 (https=)
GB2511248A (en) Enhanced data retention mode for dynamic memories
CN104517638B (zh) 静态随机存取存储器的自适应性数据保持电压调节系统
CN102057437B (zh) 半导体存储装置
US8050108B2 (en) Semiconductor memory device and semiconductor memory device operation method
US10541007B2 (en) Memory device with strap cells
US20140301152A1 (en) Reduction of power consumption in memory devices during refresh modes
KR20190003864A (ko) 동적 전력 및 피크 전류를 낮추기 위한 sram 비트라인과 기입 보조 장치 및 방법과, 듀얼 입력 레벨-쉬프터
TW200802373A (en) Semiconductor memory
WO2011133763A3 (en) Retain-till-accessed (rta) power saving mode in high performance static memories
JP2009545834A5 (https=)
US7903477B2 (en) Pre-charge voltage generation and power saving modes
TW201614654A (en) Single port static random access memory (8)
JP2010146678A5 (https=)
US8861299B2 (en) Semiconductor memory device
US8929129B2 (en) Semiconductor device
CN104516684A (zh) 数据处理装置、微型控制器、以及半导体装置
KR20130129787A (ko) 반도체모듈
TWI500029B (zh) 在例如隨機存取記憶體的記憶體中改良電力輸送的設備與方法
JP2014026718A5 (ja) 半導体装置
TW201405557A (zh) 記憶體裝置及其寫入方法
CN101714400A (zh) 可降低易失性存储器的电能消耗的方法及其相关装置
KR20160068561A (ko) 데이터 출력 회로, 이를 구비하는 반도체 메모리 장치 및 동작방법
US20260079551A1 (en) Systems and methods for integrating batteries to maintain volatile memories and protect the volatile memories from excessive temperatures
CN103531229A (zh) 一种静态随机存储器