JP2008098449A - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

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Publication number
JP2008098449A
JP2008098449A JP2006279240A JP2006279240A JP2008098449A JP 2008098449 A JP2008098449 A JP 2008098449A JP 2006279240 A JP2006279240 A JP 2006279240A JP 2006279240 A JP2006279240 A JP 2006279240A JP 2008098449 A JP2008098449 A JP 2008098449A
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JP
Japan
Prior art keywords
substrate
electrolytic
ruthenium film
film
plating
Prior art date
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Pending
Application number
JP2006279240A
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English (en)
Japanese (ja)
Other versions
JP2008098449A5 (enExample
Inventor
Hiroyuki Kanda
裕之 神田
Akira Suzaki
明 須崎
Akira Yamamoto
暁 山本
Tsutomu Nakada
勉 中田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2006279240A priority Critical patent/JP2008098449A/ja
Priority to US11/907,187 priority patent/US7947156B2/en
Publication of JP2008098449A publication Critical patent/JP2008098449A/ja
Publication of JP2008098449A5 publication Critical patent/JP2008098449A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006279240A 2006-10-12 2006-10-12 基板処理装置及び基板処理方法 Pending JP2008098449A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006279240A JP2008098449A (ja) 2006-10-12 2006-10-12 基板処理装置及び基板処理方法
US11/907,187 US7947156B2 (en) 2006-10-12 2007-10-10 Substrate processing apparatus and substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006279240A JP2008098449A (ja) 2006-10-12 2006-10-12 基板処理装置及び基板処理方法

Publications (2)

Publication Number Publication Date
JP2008098449A true JP2008098449A (ja) 2008-04-24
JP2008098449A5 JP2008098449A5 (enExample) 2009-06-18

Family

ID=39328821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006279240A Pending JP2008098449A (ja) 2006-10-12 2006-10-12 基板処理装置及び基板処理方法

Country Status (2)

Country Link
US (1) US7947156B2 (enExample)
JP (1) JP2008098449A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011090770A (ja) * 2009-10-26 2011-05-06 Headway Technologies Inc 記録磁極の形成方法およびルテニウムシード層の回復方法
US8476161B2 (en) 2008-07-18 2013-07-02 Ulvac, Inc. Method for forming Cu electrical interconnection film
JP2013533381A (ja) * 2010-06-11 2013-08-22 ファラデイ テクノロジー，インコーポレイティド 強不動態化金属の電解システム及び加工方法
JP2015528059A (ja) * 2012-07-11 2015-09-24 ファラデイ テクノロジー，インコーポレイティド 超伝導高周波空洞の電気化学システム及び電解研磨方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US7901550B2 (en) * 2007-10-15 2011-03-08 Ebara Corporation Plating apparatus
JP4458496B2 (ja) * 2008-04-16 2010-04-28 株式会社豊田中央研究所 筒内噴射式内燃機関、筒内噴射式内燃機関用ピストン、筒内噴射式内燃機関用ピストンの製造方法
JP2010037637A (ja) * 2008-08-08 2010-02-18 Ebara Corp 電解処理装置及び電解処理方法
US20140134351A1 (en) * 2012-11-09 2014-05-15 Applied Materials, Inc. Method to deposit cvd ruthenium
US10847463B2 (en) * 2017-08-22 2020-11-24 Applied Materials, Inc. Seed layers for copper interconnects

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124214A (ja) * 2001-10-15 2003-04-25 Ebara Corp 配線形成方法及びその装置
US20050145499A1 (en) * 2000-06-05 2005-07-07 Applied Materials, Inc. Plating of a thin metal seed layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3462970B2 (ja) * 1997-04-28 2003-11-05 三菱電機株式会社 メッキ処理装置およびメッキ処理方法
US6632335B2 (en) * 1999-12-24 2003-10-14 Ebara Corporation Plating apparatus
JP3343342B2 (ja) * 2000-04-28 2002-11-11 ティーディーケイ株式会社 めっき方法及び装置、及びそれを用いた薄膜磁気ヘッドの製造方法
US6746589B2 (en) * 2000-09-20 2004-06-08 Ebara Corporation Plating method and plating apparatus
WO2003060959A2 (en) * 2002-01-10 2003-07-24 Semitool, Inc. Method for applying metal features onto barrier layers using electrochemical deposition
JP3819840B2 (ja) * 2002-07-17 2006-09-13 大日本スクリーン製造株式会社 メッキ装置およびメッキ方法
US6974531B2 (en) * 2002-10-15 2005-12-13 International Business Machines Corporation Method for electroplating on resistive substrates
US20050274622A1 (en) * 2004-06-10 2005-12-15 Zhi-Wen Sun Plating chemistry and method of single-step electroplating of copper on a barrier metal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050145499A1 (en) * 2000-06-05 2005-07-07 Applied Materials, Inc. Plating of a thin metal seed layer
JP2003124214A (ja) * 2001-10-15 2003-04-25 Ebara Corp 配線形成方法及びその装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476161B2 (en) 2008-07-18 2013-07-02 Ulvac, Inc. Method for forming Cu electrical interconnection film
JP5377489B2 (ja) * 2008-07-18 2013-12-25 株式会社アルバック Ｃｕ配線膜の形成方法
JP2011090770A (ja) * 2009-10-26 2011-05-06 Headway Technologies Inc 記録磁極の形成方法およびルテニウムシード層の回復方法
JP2013533381A (ja) * 2010-06-11 2013-08-22 ファラデイ テクノロジー，インコーポレイティド 強不動態化金属の電解システム及び加工方法
JP2015528059A (ja) * 2012-07-11 2015-09-24 ファラデイ テクノロジー，インコーポレイティド 超伝導高周波空洞の電気化学システム及び電解研磨方法

Also Published As

Publication number Publication date
US20080099340A1 (en) 2008-05-01
US7947156B2 (en) 2011-05-24

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