JP2008094728A - 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 - Google Patents
化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 Download PDFInfo
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- JP2008094728A JP2008094728A JP2006275215A JP2006275215A JP2008094728A JP 2008094728 A JP2008094728 A JP 2008094728A JP 2006275215 A JP2006275215 A JP 2006275215A JP 2006275215 A JP2006275215 A JP 2006275215A JP 2008094728 A JP2008094728 A JP 2008094728A
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- Prior art keywords
- ruthenium
- compound
- vapor deposition
- chemical vapor
- thin film
- Prior art date
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- 150000003304 ruthenium compounds Chemical class 0.000 title claims abstract description 32
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 25
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 17
- 150000004945 aromatic hydrocarbons Chemical group 0.000 claims abstract description 14
- 125000001424 substituent group Chemical group 0.000 claims abstract description 14
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 claims abstract description 12
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 239000007789 gas Substances 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 6
- 239000000376 reactant Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- 239000010408 film Substances 0.000 description 17
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- QNLGITAXXBYCNU-UHFFFAOYSA-N C12=CC=C(CC1)C2.[Ru] Chemical compound C12=CC=C(CC1)C2.[Ru] QNLGITAXXBYCNU-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- GOBUMBIMVXZEMK-UHFFFAOYSA-N CC1=CC=CC=C1.C12=CC=C(CC1)C2.[Ru] Chemical compound CC1=CC=CC=C1.C12=CC=C(CC1)C2.[Ru] GOBUMBIMVXZEMK-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- -1 Ruthenium (norbornadiene) (p-cymene) Chemical compound 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 239000006200 vaporizer Substances 0.000 description 4
- LAXRNWSASWOFOT-UHFFFAOYSA-J (cymene)ruthenium dichloride dimer Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Ru+2].[Ru+2].CC(C)C1=CC=C(C)C=C1.CC(C)C1=CC=C(C)C=C1 LAXRNWSASWOFOT-UHFFFAOYSA-J 0.000 description 3
- OXJUCLBTTSNHOF-UHFFFAOYSA-N 5-ethylcyclopenta-1,3-diene;ruthenium(2+) Chemical compound [Ru+2].CC[C-]1C=CC=C1.CC[C-]1C=CC=C1 OXJUCLBTTSNHOF-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YUWFEBAXEOLKSG-UHFFFAOYSA-N hexamethylbenzene Chemical compound CC1=C(C)C(C)=C(C)C(C)=C1C YUWFEBAXEOLKSG-UHFFFAOYSA-N 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 150000003303 ruthenium Chemical class 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 238000005292 vacuum distillation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUOXGYNTYVIQET-UHFFFAOYSA-N cycloocta-1,5-diene;ruthenium;toluene Chemical compound [Ru].CC1=CC=CC=C1.C1CC=CCCC=C1 XUOXGYNTYVIQET-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- BIXNGBXQRRXPLM-UHFFFAOYSA-K ruthenium(3+);trichloride;hydrate Chemical compound O.Cl[Ru](Cl)Cl BIXNGBXQRRXPLM-UHFFFAOYSA-K 0.000 description 2
- BNXNQXKAEVKUJG-UHFFFAOYSA-N 1-Methyl-2-n-hexylbenzene Chemical compound CCCCCCC1=CC=CC=C1C BNXNQXKAEVKUJG-UHFFFAOYSA-N 0.000 description 1
- QDXQAOGNBCOEQX-UHFFFAOYSA-N 1-methylcyclohexa-1,4-diene Chemical compound CC1=CCC=CC1 QDXQAOGNBCOEQX-UHFFFAOYSA-N 0.000 description 1
- ONLXYTCDPGHWDC-UHFFFAOYSA-N CC1=C(C(=C(C(=C1C)C)C)C)C.C12=CC=C(CC1)C2.[Ru] Chemical compound CC1=C(C(=C(C(=C1C)C)C)C)C.C12=CC=C(CC1)C2.[Ru] ONLXYTCDPGHWDC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000002897 diene group Chemical group 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0046—Ruthenium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
- C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Andreas Schneider et al.,Chem.Vap.Deposition 2005,11,No.2,p.99〜105
・プレカーサ(原料)供給速度:0.1g/min
・気化器温度:120℃
・テープヒーター温度:150℃
・気化器Ar流速:500sccm
・成膜温度:370、400、430、460℃
・成膜圧力:0.1、1、5、10torr
Claims (5)
- 置換基R1がメチル基であり、他の置換基R2〜R6は水素である請求項1記載の有機ルテニウム化合物。
- 置換基R1がメチル基、R4がイソプロピル基であり、他の置換基R2、R3、R5、R6は水素である請求項1記載の有機ルテニウム化合物。
- 置換基R1〜R6がメチル基である請求項1記載の有機ルテニウム化合物。
- 原料化合物となる有機ルテニウム化合物を気化して反応ガスとし、前記反応ガスを基板表面に導入しつつ加熱するルテニウム薄膜又はルテニウム化合物薄膜の化学蒸着法において、
前記有機ルテニウム化合物として請求項1〜請求項4のいずれかに記載の有機ルテニウム化合物を用いる化学蒸着法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006275215A JP5032085B2 (ja) | 2006-10-06 | 2006-10-06 | 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 |
CN2007800013705A CN101356181B (zh) | 2006-10-06 | 2007-09-27 | 化学气相沉积用的有机钌化合物及使用该有机钌化合物的化学气相沉积方法 |
US12/091,782 US8097299B2 (en) | 2006-10-06 | 2007-09-27 | Organic ruthenium compound for chemical vapor deposition, and chemical vapor deposition method using the organic ruthenium compound |
PCT/JP2007/068805 WO2008044478A1 (fr) | 2006-10-06 | 2007-09-27 | Composé organique de ruthénium pour dépôt chimique en phase vapeur, et procédé de dépôt chimique en phase vapeur utilisant le composé organique du ruthénium |
KR1020087012637A KR100982109B1 (ko) | 2006-10-06 | 2007-09-27 | 화학 증착용 유기 루테늄 화합물 및 이 유기 루테늄화합물을 사용한 화학 증착방법 |
TW096136172A TWI409270B (zh) | 2006-10-06 | 2007-09-28 | 使用有機釕化合物的化學沈積方法 |
US13/182,720 US8252377B2 (en) | 2006-10-06 | 2011-07-14 | Organoruthenium compound for use in chemical vapor deposition and chemical vapor deposition using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006275215A JP5032085B2 (ja) | 2006-10-06 | 2006-10-06 | 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008094728A true JP2008094728A (ja) | 2008-04-24 |
JP5032085B2 JP5032085B2 (ja) | 2012-09-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006275215A Active JP5032085B2 (ja) | 2006-10-06 | 2006-10-06 | 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8097299B2 (ja) |
JP (1) | JP5032085B2 (ja) |
KR (1) | KR100982109B1 (ja) |
CN (1) | CN101356181B (ja) |
TW (1) | TWI409270B (ja) |
WO (1) | WO2008044478A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013510807A (ja) * | 2009-11-14 | 2013-03-28 | ユミコア・アクチエンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト | Ru(0)−オレフィン錯体を調製するためのプロセス |
WO2014126068A1 (ja) * | 2013-02-18 | 2014-08-21 | 国立大学法人東京農工大学 | 触媒前駆体および不斉鎖状化合物の合成方法 |
JP2017524729A (ja) * | 2014-05-30 | 2017-08-31 | ユーピー ケミカル カンパニー リミテッド | 新規ルテニウム化合物、その製造方法、これを含む膜蒸着用前駆体組成物、及びこれを利用した膜の蒸着方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090205538A1 (en) * | 2008-01-24 | 2009-08-20 | Thompson David M | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
KR20100060482A (ko) * | 2008-11-27 | 2010-06-07 | 주식회사 유피케미칼 | 루테늄 금속 또는 루테늄 산화물 박막 증착용 유기 금속 전구체 화합물 및 이를 이용한 박막 증착 방법 |
JP5140184B1 (ja) * | 2011-08-03 | 2013-02-06 | 田中貴金属工業株式会社 | 化学蒸着原料用の有機ルテニウム化合物及び該有機ルテニウム化合物の製造方法 |
KR20140131219A (ko) * | 2013-05-03 | 2014-11-12 | 한국화학연구원 | 루테늄 전구체, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법 |
WO2020096976A1 (en) * | 2018-11-08 | 2020-05-14 | Entegris, Inc. | Chemical vapor deposition processes using ruthenium precursor and reducing gas |
JP2022031988A (ja) * | 2018-11-08 | 2022-02-24 | 株式会社Adeka | 原子層堆積法による金属ルテニウム薄膜の製造方法 |
JP7372353B2 (ja) * | 2020-01-31 | 2023-10-31 | 田中貴金属工業株式会社 | 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
KR102642469B1 (ko) | 2021-12-22 | 2024-03-04 | (주)원익머트리얼즈 | 유기금속 전구체를 이용한 금속 박막 증착 방법 |
US20230287022A1 (en) * | 2022-03-14 | 2023-09-14 | Applied Materials, Inc. | Non-Halide Oxygen-Free Organometallic Precursors for ALD/CVD of Metallization |
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JP2007169725A (ja) * | 2005-12-22 | 2007-07-05 | Kojundo Chem Lab Co Ltd | ルテニウム膜形成用組成物 |
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JP2013510807A (ja) * | 2009-11-14 | 2013-03-28 | ユミコア・アクチエンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト | Ru(0)−オレフィン錯体を調製するためのプロセス |
WO2014126068A1 (ja) * | 2013-02-18 | 2014-08-21 | 国立大学法人東京農工大学 | 触媒前駆体および不斉鎖状化合物の合成方法 |
JPWO2014126068A1 (ja) * | 2013-02-18 | 2017-02-02 | 国立大学法人東京農工大学 | 触媒前駆体および不斉鎖状化合物の合成方法 |
JP2017524729A (ja) * | 2014-05-30 | 2017-08-31 | ユーピー ケミカル カンパニー リミテッド | 新規ルテニウム化合物、その製造方法、これを含む膜蒸着用前駆体組成物、及びこれを利用した膜の蒸着方法 |
US9957614B2 (en) | 2014-05-30 | 2018-05-01 | Up Chemical Co., Ltd. | Ruthenium compound, preparation method therefor, precursor composition for film deposition containing same, and method for depositing film by using same |
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TW200819459A (en) | 2008-05-01 |
KR100982109B1 (ko) | 2010-09-14 |
WO2008044478A1 (fr) | 2008-04-17 |
JP5032085B2 (ja) | 2012-09-26 |
CN101356181A (zh) | 2009-01-28 |
US8097299B2 (en) | 2012-01-17 |
US8252377B2 (en) | 2012-08-28 |
KR20080095233A (ko) | 2008-10-28 |
CN101356181B (zh) | 2012-01-04 |
TWI409270B (zh) | 2013-09-21 |
US20110268878A1 (en) | 2011-11-03 |
US20090238970A1 (en) | 2009-09-24 |
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