JP2008091850A - 浮遊ゲートnandフラッシュメモリ用のゲート注入を用いるセル動作方法 - Google Patents
浮遊ゲートnandフラッシュメモリ用のゲート注入を用いるセル動作方法 Download PDFInfo
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- 238000007667 floating Methods 0.000 claims abstract description 53
- 230000008878 coupling Effects 0.000 claims abstract description 21
- 238000010168 coupling process Methods 0.000 claims abstract description 21
- 238000005859 coupling reaction Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 230000005641 tunneling Effects 0.000 abstract description 23
- 238000002513 implantation Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 2
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- 238000004088 simulation Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
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- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
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- H01L29/66409—Unipolar field-effect transistors
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
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- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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Abstract
【解決手段】フラッシュメモリ素子上で動作を行う方法であって、浮遊ゲートと制御ゲートの間にゲート結合率が0.4未満である場合に用いられる。電位は、制御ゲートを介して印加する必要がある。電子は、制御ゲートから浮遊ゲートに注入されるか、または浮遊ゲートから制御ゲートに放出される。注入および放出に対応した動作は、素子内に提供されるシリコンチャネルの性質によって決定される。この方法には特に、バルク結合FinFET状構造を用いる素子が適している。この方法は特に、NANDアレイ内のセル上で用いる場合にも適している。
【選択図】図1
Description
12 ポリ間上部トンネリング誘電体
14 電荷蓄積浮遊ゲート
16 底部ゲート酸化物
18 チャネル
20a ソース
20b ソース
22a ドレイン
22b ドレイン
24 井戸
24a p井戸
24b n井戸
26 接合部
28 高密度プラズマ(HDP)酸化物
Claims (7)
- フラッシュメモリセル素子上で動作を行う方法であって、前記素子の浮遊ゲートと制御ゲートの間のゲート結合率が約0.4未満であり、
(a)制御ゲートを介して電位を提供し、及び、
(b)制御ゲートから浮遊ゲートに電子を注入するか、または浮遊ゲートから制御ゲートに電子を放出することを含む方法。 - フラッシュメモリセル素子上で動作を行う方法であって、前記素子がバルク結合FinFET状構造のシリコンチャネルを備え、浮遊ゲートと制御ゲートの間のゲート結合率が約0.4未満であり、
(a)制御ゲートを介して電位を提供し、及び、
(b)制御ゲートから浮遊ゲートに電子を注入するか、または浮遊ゲートから制御ゲートに電子を放出することを含む方法。 - シリコンチャネルがnチャネル型であり、ステップ(b)がさらに、
(i)浮遊ゲートから制御ゲートに電子を放出することによってセルをプログラムし、及び、
(ii)制御ゲートから浮遊ゲートに電子を注入することによってセルを消去することを含む請求項2記載の方法。 - シリコンチャネルがpチャネル型であり、ステップ(b)がさらに、
(i)制御ゲートから浮遊ゲートに電子を注入することによってセルをプログラムし、及び、
(ii)浮遊ゲートから制御ゲートに電子を放出することによってセルを消去することを含む請求項2記載の方法。 - NANDフラッシュメモリアレイ内に提供されたフラッシュメモリセル素子上で動作を行う方法であって、前記素子がバルク結合FinFET状構造のシリコンチャネルを備え、浮遊ゲートと制御ゲートの間のゲート結合率が約0.4未満であり、
(a)制御ゲートを介して電位を提供し、及び、
(b)制御ゲートから浮遊ゲートに電子を注入するか、または浮遊ゲートから制御ゲートに電子を放出することを含む方法。 - シリコンチャネルがnチャネル型であり、ステップ(b)がさらに、
(i)浮遊ゲートから制御ゲートに電子を放出することによってセルをプログラムし、及び、
(ii)制御ゲートから浮遊ゲートに電子を注入することによってセルを消去することを含む請求項5記載の方法。 - シリコンチャネルがpチャネル型であり、ステップ(b)がさらに、
(i)制御ゲートから浮遊ゲートに電子を注入することによってセルをプログラムし、及び、
(ii)浮遊ゲートから制御ゲートに電子を放出することによってセルを消去することを含む請求項5記載の方法。
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US11/542,749 US8325530B2 (en) | 2006-10-03 | 2006-10-03 | Cell operation methods using gate-injection for floating gate NAND flash memory |
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JP2008091850A true JP2008091850A (ja) | 2008-04-17 |
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US (1) | US8325530B2 (ja) |
EP (1) | EP1909288B1 (ja) |
JP (1) | JP2008091850A (ja) |
CN (1) | CN101159270B (ja) |
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EP1909288A1 (en) | 2008-04-09 |
CN101159270A (zh) | 2008-04-09 |
US20080080248A1 (en) | 2008-04-03 |
EP1909288B1 (en) | 2012-04-18 |
US8325530B2 (en) | 2012-12-04 |
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