JP2008066494A - 液晶表示パネルの製造方法および液晶表示パネル - Google Patents
液晶表示パネルの製造方法および液晶表示パネル Download PDFInfo
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 92
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 78
- 239000010408 film Substances 0.000 claims description 71
- 239000010409 thin film Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 46
- 239000002245 particle Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000002923 metal particle Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 4
- 238000010304 firing Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 description 36
- 239000011229 interlayer Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 8
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 6
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 6
- 229910004444 SUB1 Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 101150046160 POL1 gene Proteins 0.000 description 2
- 229910004438 SUB2 Inorganic materials 0.000 description 2
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 101100117436 Thermus aquaticus polA gene Proteins 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- -1 etc. are formed Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 101150018444 sub2 gene Proteins 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 101100224481 Dictyostelium discoideum pole gene Proteins 0.000 description 1
- 101150110488 POL2 gene Proteins 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- OSDXSOSJRPQCHJ-XVNBXDOJSA-N methyl 3-(3,4-dihydroxyphenyl)-3-[(E)-3-(3,4-dihydroxyphenyl)prop-2-enoyl]oxypropanoate Chemical compound C=1C=C(O)C(O)=CC=1C(CC(=O)OC)OC(=O)\C=C\C1=CC=C(O)C(O)=C1 OSDXSOSJRPQCHJ-XVNBXDOJSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136295—Materials; Compositions; Manufacture processes
Abstract
【解決手段】液晶表示パネルのゲート配線とゲート電極GT、データ配線を含めたソース電極SD1、ドレイン電極SD2の何れかの工程、又はそれらの幾つかの工程にインクジェット直描プロセスを導入することに加えて、シリコン半導体層SIとn+コンタクト層NSの積層からなる能動層アイランドの形成にインクジェット直描プロセスを用いる。
【選択図】図12
Description
Claims (17)
- マトリクス配列した複数の画素毎に薄膜トランジスタを形成した第1基板と、カラーフィルタを形成した第2基板と、前記第1基板と前記第2基板との貼り合わせた間隙に液晶を封入した液晶表示パネルの製造方法であって、
前記第1基板に成膜した半導体層およびコンタクト層の上に、インクジェット直描によりソース電極とドレイン電極となる第1の導電性インクを塗布して薄膜トランジスタのチャネル部を含めて連続した第1の導電膜を形成し、
前記第1の導電膜の上に、インクジェット直描により第2の導電性インクを塗布してキャップ層とし、該第1の導電膜と共に積層膜を形成し、
前記積層膜をパターニングしてソース電極とドレイン電極となる部分が連続したソース電極・ドレイン電極部を形成し、
前記ソース電極・ドレイン電極部をエッチングマスクとして前記半導体層およびコンタクト層をパターニングし、前記薄膜トランジスタの能動層アイランドを形成することを特徴とする液晶表示パネルの製造方法。 - 請求項1において、
前記第1の導電性インクは、溶媒に低抵抗金属粒子を分散して含み、
前記第2の導電性インクは、溶媒に透明導電性粒子又は金属粒子を分散して含むことを特徴とする液晶表示パネルの製造方法。 - 請求項2において、
前記第1の導電性インクに含む低抵抗金属粒子は銀粒子又は銅粒子の何れか、又はそれらの混合粒子であり、
前記第2の導電性インクに含む透明導電性粒子は金属酸化物粒子で、金属粒子はニッケル粒子であることを特徴とする液晶表示パネルの製造方法。 - マトリクス配列した複数の画素毎に薄膜トランジスタを形成した第1基板と、カラーフィルタを形成した第2基板と、前記第1基板と前記第2基板との貼り合わせた間隙に液晶を封入した液晶表示パネルの製造方法であって、
前記第1基板に成膜した半導体層およびコンタクト層の上に、インクジェット直描によりソース電極とドレイン電極となる第1の導電性インクを塗布して薄膜トランジスタのチャネル部を含めて連続した第1の導電膜を形成し、
前記第1の導電膜の上に、インクジェット直描により第2の導電性インクを塗布してキャップ層とし、該第1の導電膜と共に積層膜を形成し、
前記積層膜をパターニングしてソース電極とドレイン電極となる部分が連続したソース電極・ドレイン電極部を形成し、
前記ソース電極・ドレイン電極部をエッチングマスクとして前記半導体層およびコンタクト層をパターニングし、前記薄膜トランジスタの能動層アイランドを形成し、
前記能動層アイランド上のソース電極・ドレイン電極部を含む基板の表面を覆って透明導電膜を成膜し、
ホトレジストを塗布しホトリソグラフィ技法により前記チャネル部の前記透明導電膜を露出させ、該露出した部分の前記透明導電膜をエッチング除去してコンタクト層を露出させ、
露出したコンタクト層をエッチングして下層の半導体層にチャネル部を形成することを特徴とする液晶表示パネルの製造方法。 - 請求項4において、
前記第1の導電性インクは、溶媒に低抵抗金属粒子を分散して含み、
前記第2の導電性インクは、溶媒に透明導電性粒子又は金属粒子を分散して含むことを特徴とする液晶表示パネルの製造方法。 - 請求項4において、
前記第1の導電性インクに含む低抵抗金属粒子は銀粒子又は銅粒子の何れか、又はそれらの混合粒子であり、
前記第2の導電性インクに含む透明導電性粒子は金属酸化物粒子であり、金属粒子はニッケル粒子であることを特徴とする液晶表示パネルの製造方法。 - 請求項4において、
前記透明導電膜はITO又はIZO、もしくはIZTOの何れかであることを特徴とする液晶表示パネルの製造方法。 - マトリクス配列した複数の画素毎に薄膜トランジスタを形成した第1基板と、カラーフィルタを形成した第2基板と、前記第1基板と前記第2基板との貼り合わせた間隙に液晶を封入した液晶表示パネルであって、
前記第1基板に有する薄膜トランジスタのソース電極およびドレイン電極は、インクジェット直描により塗布して形成された第1の導電膜の上に、同じくインクジェット直描により塗布して形成されたキャップ層との積層膜と、該積層膜の上層に成膜された透明導電膜とからなることを特徴とする液晶表示パネル。 - 請求項8において、
前記透明導電膜は、前記画素の領域では前記ソース電極又は前記ドレイン電極の一方と一体の画素電極を構成していることを特徴とする液晶表示パネル。 - 請求項8において、
前記透明導電膜は、前記データ配線の領域では前記ソース電極又は前記ドレインの他方と当該データ配線に一体となっていることを特徴とする液晶表示パネル。 - 請求項8において、
前記第1の導電膜は低抵抗金属薄膜で、
前記第2の導電膜は透明導電薄膜又は金属薄膜であることを特徴とする液晶表示パネル。 - 請求項11において、
前記低抵抗金属薄膜は銀粒子の焼成膜又は銅粒子の焼成膜の何れか、又はそれらの混合粒子の焼成膜であり、
前記透明導電薄膜は金属酸化物粒子の焼成膜又は金属粒子の焼成膜であることを特徴とする液晶表示パネル。 - 請求項12において、
前記金属酸化物粒子はITO又はIZO、もしくはIZTOの粒子であり、前記金属粒子はニッケル粒子であることを特徴とする液晶表示パネル。 - 請求項8において、
前記ソース電極と前記ドレイン電極を構成する前記積層膜の前記キャップ層の対向間隔が当該積層膜の前記第1の導電膜の対向間隔より狭いことを特徴とする液晶表示パネル。 - 請求項8において、
前記ソース電極と前記ドレイン電極を構成する前記透明導電膜の対向間隔が前記積層膜の前記第1の導電膜の対向間隔より狭いことを特徴とする液晶表示パネル。 - 請求項8において、
前記薄膜トランジスタを構成するゲート配線およびゲート電極が、導電性インクのインクジェットによる塗布と焼成で形成されていることを特徴とする液晶表示パネル。 - 請求項8において、
前記薄膜トランジスタを構成するデータ配線が、導電性インクのインクジェットによる塗布と焼成で形成されていることを特徴とする液晶表示パネル。
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KR1020070082178A KR100922272B1 (ko) | 2006-09-07 | 2007-08-16 | 액정 표시 패널의 제조 방법 및 액정 표시 패널 |
CN200710141673A CN100578327C (zh) | 2006-09-07 | 2007-08-17 | 液晶显示板的制造方法及液晶显示板 |
EP07253499A EP1898461A3 (en) | 2006-09-07 | 2007-09-04 | Liquid crystal display panel and method for manufacturing the same |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013080900A1 (en) * | 2011-12-02 | 2013-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009103732A (ja) * | 2007-10-19 | 2009-05-14 | Sony Corp | 表示装置およびその製造方法 |
CN102033343B (zh) | 2009-09-25 | 2012-09-19 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法 |
KR101284709B1 (ko) * | 2010-09-20 | 2013-07-16 | 엘지디스플레이 주식회사 | 액정 표시장치와 이의 제조방법 |
CN102650763B (zh) * | 2011-08-26 | 2015-01-07 | 北京京东方光电科技有限公司 | 一种液晶显示屏及其制造方法与显示器 |
JP6053490B2 (ja) | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2013094547A1 (en) | 2011-12-23 | 2013-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN107255896A (zh) * | 2017-07-27 | 2017-10-17 | 深圳市华星光电技术有限公司 | 一种显示面板、阵列基板及其制造方法 |
KR102556021B1 (ko) * | 2017-10-13 | 2023-07-17 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
CN112366178B (zh) * | 2020-11-09 | 2023-03-28 | Tcl华星光电技术有限公司 | 阵列基板的制备方法及阵列基板 |
CN112785962B (zh) * | 2021-03-11 | 2024-03-08 | 厦门天马微电子有限公司 | 显示面板及显示装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005078087A (ja) * | 2003-08-28 | 2005-03-24 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板とその製造方法 |
JP2005165300A (ja) * | 2003-11-14 | 2005-06-23 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の作製方法 |
JP2005165304A (ja) * | 2003-11-14 | 2005-06-23 | Semiconductor Energy Lab Co Ltd | 液晶表示装置および液晶表示装置の作製方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
US5187604A (en) * | 1989-01-18 | 1993-02-16 | Hitachi, Ltd. | Multi-layer external terminals of liquid crystal displays with thin-film transistors |
JP3009438B2 (ja) * | 1989-08-14 | 2000-02-14 | 株式会社日立製作所 | 液晶表示装置 |
US5402254B1 (en) * | 1990-10-17 | 1998-09-22 | Hitachi Ltd | Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
JPH05341315A (ja) * | 1992-06-08 | 1993-12-24 | Hitachi Ltd | 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置 |
JP3184853B2 (ja) * | 1993-06-24 | 2001-07-09 | 株式会社日立製作所 | 液晶表示装置 |
JP3861400B2 (ja) * | 1997-09-01 | 2006-12-20 | セイコーエプソン株式会社 | 電界発光素子およびその製造方法 |
JP2000269504A (ja) * | 1999-03-16 | 2000-09-29 | Hitachi Ltd | 半導体装置、その製造方法及び液晶表示装置 |
US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
KR20010082831A (ko) * | 2000-02-21 | 2001-08-31 | 구본준, 론 위라하디락사 | 액정표시장치의 제조방법 |
TW518442B (en) * | 2000-06-29 | 2003-01-21 | Au Optronics Corp | Thin film transistor liquid crystal display and its manufacture method |
JP3972354B2 (ja) * | 2000-10-17 | 2007-09-05 | セイコーエプソン株式会社 | アクティブマトリクス基板及び液晶表示装置の製造方法 |
GB2379083A (en) * | 2001-08-20 | 2003-02-26 | Seiko Epson Corp | Inkjet printing on a substrate using two immiscible liquids |
JP3963693B2 (ja) * | 2001-10-15 | 2007-08-22 | 富士通株式会社 | 導電性有機化合物及び電子素子 |
US6555411B1 (en) * | 2001-12-18 | 2003-04-29 | Lucent Technologies Inc. | Thin film transistors |
JP2003318193A (ja) * | 2002-04-22 | 2003-11-07 | Seiko Epson Corp | デバイス、その製造方法及び電子装置 |
US7183146B2 (en) * | 2003-01-17 | 2007-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US20040197964A1 (en) * | 2003-04-01 | 2004-10-07 | Yu-Chou Lee | Method for fabricating thin film transistor for liquid crystal display device |
JP2004349583A (ja) * | 2003-05-23 | 2004-12-09 | Sharp Corp | トランジスタの製造方法 |
JP4666999B2 (ja) * | 2003-10-28 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 配線及び薄膜トランジスタの作製方法 |
WO2005047967A1 (en) * | 2003-11-14 | 2005-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US7659138B2 (en) * | 2003-12-26 | 2010-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an organic semiconductor element |
JP4628040B2 (ja) * | 2004-08-20 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体素子を備えた表示装置の製造方法 |
JP2006148050A (ja) * | 2004-10-21 | 2006-06-08 | Seiko Epson Corp | 薄膜トランジスタ、電気光学装置、及び電子機器 |
US8058652B2 (en) * | 2004-10-28 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element |
JP2006195142A (ja) * | 2005-01-13 | 2006-07-27 | Future Vision:Kk | 配線パターンを有する基板及びそれを用いた液晶表示装置 |
JP4395659B2 (ja) * | 2005-12-20 | 2010-01-13 | 株式会社フューチャービジョン | 液晶表示装置とその製造方法 |
-
2006
- 2006-09-07 JP JP2006242274A patent/JP4565573B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-09 TW TW096129398A patent/TW200828450A/zh unknown
- 2007-08-16 KR KR1020070082178A patent/KR100922272B1/ko not_active IP Right Cessation
- 2007-08-17 CN CN200710141673A patent/CN100578327C/zh not_active Expired - Fee Related
- 2007-09-04 EP EP07253499A patent/EP1898461A3/en not_active Withdrawn
- 2007-09-06 US US11/850,743 patent/US20080062344A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005078087A (ja) * | 2003-08-28 | 2005-03-24 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板とその製造方法 |
JP2005165300A (ja) * | 2003-11-14 | 2005-06-23 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の作製方法 |
JP2005165304A (ja) * | 2003-11-14 | 2005-06-23 | Semiconductor Energy Lab Co Ltd | 液晶表示装置および液晶表示装置の作製方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013080900A1 (en) * | 2011-12-02 | 2013-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2013153140A (ja) * | 2011-12-02 | 2013-08-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US9142679B2 (en) | 2011-12-02 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device using oxide semiconductor |
US9472656B2 (en) | 2011-12-02 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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EP1898461A2 (en) | 2008-03-12 |
CN100578327C (zh) | 2010-01-06 |
CN101140398A (zh) | 2008-03-12 |
KR100922272B1 (ko) | 2009-10-15 |
KR20080023109A (ko) | 2008-03-12 |
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