CN101140398A - 液晶显示板的制造方法及液晶显示板 - Google Patents
液晶显示板的制造方法及液晶显示板 Download PDFInfo
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Abstract
本发明的目的在于提供一种可简化制造工序,还可实现液晶显示装置的成本降低的制造方法和液晶显示板。除了对液晶显示板的栅配线和栅电极GT、包含数据配线的源电极SD1、漏电极SD2的某个工序、或几个工序导入喷墨直描过程之外,对由硅半导体层SI和n+硅层NS的层叠构成的有源层岛的形成使用喷墨直描过程。
Description
技术领域
本发明涉及液晶显示装置,特别涉及有源矩阵型的液晶显示板的制造方法及利用该制造方法制造的液晶显示板。
背景技术
液晶显示装置是由液晶显示板PNL和驱动电路及背光灯等周边装置组合而成。图16为说明典型的纵向电场型(所谓TN型)的液晶显示装置的概略构成例的剖面示意图。通常,构成有源矩阵型的液晶显示装置的液晶显示板是在由第1基板(有源矩阵基板或薄膜晶体管基板)构成的第1面板PNL1和由第2基板(对置基板或彩色滤光片基板)构成的笫2面板PNL2之间封入液晶LC而形成。
在构成第1面板PNL1的第1基板SUB1的内面上有薄膜晶体管TFT和由此薄膜晶体管TFT驱动的像素电极PX,在最上层形成第1取向膜ORI1,赋予液晶取向控制能。另外,在外面(背面)粘贴有第1偏振片POL1。另一方面,在构成笫2面板PLN2的笫2基板SUB2的内面上有彩色滤光片CF、将与邻接像素的彩色滤光片之间分开的遮光层(黑矩阵)BM及对置电极CT,在最上层形成第2取向膜ORI2,赋予液晶取向控制能。另外,在外面(表面)粘贴有将偏光轴与笫1偏振片POL1的偏光轴配置成为正交尼科尔棱镜的第2偏振片POL2。另外,图示中省略了详细构成。
在第1基板SUB1上制作薄膜晶体管TFT的制造工序中,在该基板上,首先,形成由铬等金属制作的平行配置的多个栅配线及从该各栅配线到针对每个像素延伸的栅电极。其后,形成绝缘层、有源层(硅半导体层)、数据配线、漏电极及源电极、像素电极、保护膜、取向膜等,将液晶取向控制能赋予取向膜而形成第1基板。在第1基板SUB1的背面,设置背光灯BLK。另外,用来驱动此液晶显示板的电路未图示。
图17为说明在图16中说明的液晶显示板的1像素构成例和构成此像素的薄膜晶体管的构成例的示图。就是说,图17(a)是像素的平面图,图17(b)是沿着图16(a)的G-G’线的剖面图。如图17(a)所示,1像素在由相邻的栅配线和数据配线围成的区域中形成。在此像素区域内,薄膜晶体管TFT配置在栅配线GL和数据配线DL的交叉部上。另外,构成像素的像素电极PX通过接触孔TH与薄膜晶体管TFT的源电极SD1连接,并且在与辅助电容配线CL之间形成辅助电容。另外,源电极和漏电极在工作中是交换的,但在此处是将源电极固定为SD1,将漏电极固定为SD2进行说明的。
在图17(b)中,薄膜晶体管TFT,形成于在第1基板SUB1的表面上形成的底膜UW之上。形成栅绝缘膜GI覆盖从栅配线GL延伸的栅电极GT。在此栅绝缘膜GI上顺序层叠作为有源层的硅(Si)半导体层SI和欧姆接触层(n+Si)NS(也单称为接触层)、源电极SD1及漏电极SD2。底膜UW,由氮化硅和氧化硅的层叠膜形成。
形成优选使用氮化硅(SiNx)的栅绝缘膜GI覆盖此栅配线GL及栅电极GT,在其上形成与栅配线GL交叉的多个数据配线DL。另外,与此数据配线DL同时在同一层中形成源电极SD1和漏电极SD2。
此像素在全色显示的情况下成为各单色(红、绿、蓝)的子像素,此处单称其为像素。构成像素的薄膜晶体管TFT,如上所述,是由栅电极GT、在此栅电极之上构图的硅半导体膜SI、在硅半导体膜的上层中分离形成的欧姆接触层(n+硅)NS和分别与欧姆接触层相连接的源电极和漏电极所构成。
在此薄膜晶体管的上层形成保护膜PAS,在其上对以ITO为优选的像素电极PX构图,通过在保护膜PAS中开出的接触孔TH与源电极SD1相连接。另外,形成第1取向膜覆盖像素电极PX和保护膜PAS(参照图16),但图中未示出。
另一方面,在未图示的另一基板上,在全色的场合形成借助3色彩色滤光片和平滑层(上涂层,在图16中未示出)的对置电极(参照图16)。于是,覆盖对置电极而形成笫2取向膜(参照图16),与上述一方的基板即有源矩阵基板重叠,在其间隙中封入液晶。
在专利文献1中公开了利用喷墨法形成上述薄膜晶体管基板的布线等的方法。在专利文献1(日本专利特开2003-318193号公报)中,记述有使用含有导电材料的液体材料借助喷墨法形成薄膜晶体管TFT的栅电极,并且使用含有半导体材料的液体材料借助喷墨法形成的薄膜晶体管TFT的源电极及漏电极。
发明内容
为了在薄膜晶体管基板中制作薄膜晶体管,在(1)栅电极、(2)有源层岛形成、(3)源漏电极形成、(4)接触孔形成、(5)像素电极形成的各工序中使用光刻过程。这些光刻过程,是重复进行金属等的溅射工序、光刻胶涂覆和掩蔽曝光显影工序、刻蚀工序、光刻胶剥离清洗工序。不过,在重复进行这种工序的光刻过程中,必须具有使用曝光掩模的大规模制造设备,这成为阻碍降低产品成本的主要因素。
近年来,提出使用喷墨的直描法代替上述工序。通过采用喷墨直描法可以简化薄膜晶体管的形成,削减制造设备和大幅度提高生产效率,可以预期液晶显示装置的成本降低。
具体言之,通过以喷墨直描法制作包含薄膜晶体管的栅配线和栅电极、数据配线的源漏电极,可以削减光刻过程。不过,依然必须进行3次光刻过程。
本发明的目的在于提供一种在薄膜晶体管的制造过程中,还通过应用喷墨直描工序尽可能削减光刻过程数目而简化制造工序,实现液晶显示装置的成本的进一步降低的液晶显示板的制造方法及液晶显示板。
为达到上述目的,本发明的特征在于是以包含液晶显示板的栅配线和栅电极、数据配线的源漏电极的数个工序、或对这几个工序导入喷墨直描过程之外,对有源层岛形成使用喷墨直描过程的方法进行制造。
采用本发明,可以以低成本得到液晶显示板。
附图说明
图1为说明构成本发明的液晶显示板的第1基板的制造过程的实施例1的主要部分的工序图。
图2为图1的过程中的主要部分构造的说明图。
图3为图1的过程中的主要部分构造的说明图。
图4为图1的过程中的主要部分构造的说明图。
图5为图1的过程中的主要部分构造的说明图。
图6为图1的过程中的主要部分构造的说明图。
图7为说明构成本发明的液晶显示板的第1基板(薄膜晶体管基板)的制造过程的实施例1的主要部分的图1的后续工序图。
图8为图7的过程中的主要部分构造的说明图。
图9为图7的过程中的主要部分构造的说明图。
图10为图7的过程中的主要部分构造的说明图。
图11为图7的过程中的主要部分构造的说明图。
图12为图7的过程中的主要部分构造的说明图。
图13为用来说明本发明的效果的工序比较图。
图14为用来说明本发明的效果的另一工序比较图。
图15为说明有源矩阵型液晶显示装置的等效电路的示图。
图16为说明典型的纵向电场型(所谓TN型)的液晶显示装置的概略构成例的剖面示意图。
图17为说明在图16中说明的液晶显示板的1像素构成例和构成此像素的薄膜晶体管的构成例的示图。
附图标记说明
SUB1:第1基板(薄膜晶体管基板)、SUB2:第2基板(彩色滤光片基板)、GL:栅配线、GT:栅电极、GI:栅绝缘膜、NS:n+接触层、SI:硅半导体层、TCF:透明导电膜、RG:光刻胶、CAP:覆盖层。
具体实施方式
下面参照实施例的附图对本发明的最优实施形态进行详细说明。
[实施例1]
图1为说明构成本发明的液晶显示板的笫1基板(薄膜晶体管基板)的制造过程的实施例1的主要部分的工序图,示出从栅形成到有源层岛的形成为止的工序图。另外,栅形成包含栅配线和栅电极的形成。在实施例1中,栅电极是借助光刻过程形成,有源层岛将利用第1导电性墨水的直描形成的源漏电极作为刻蚀掩模进行构图。
图2至图6为图1的过程中的主要部分构造的说明图。另外,图4为沿着图3的A-A’线的剖面图,图6为沿着图5的B-B’线的剖面图。以下,参照图2至图6对图1的工序进行说明。在图1(a)的栅形成中,溅射栅形成用金属(铬、铝或铜等)而形成金属薄膜(P-1)。通过在此金属薄膜之上涂布感光光刻胶,使用曝光掩模进行曝光、显影的光刻工序而形成光刻胶的栅图形(P-2)。对从光刻胶中暴露的金属进行刻蚀而只留下由感光光刻胶覆盖的部分(P-3)。将感光光刻胶剥离、清洗而形成栅(栅配线和栅电极)(P-4)。
于是,在图1(b)的有源层岛和源漏形成工序中,如图2中的平面所示,在栅配线GL和栅电极GT的上层形成栅之后,利用CVD法(3层CVD)按照顺序形成以下的薄膜:栅绝缘膜GI、硅半导体层SI、作为接触层的n+硅层NS(P-5)。在此上层,如图3(a)所示,以源电极材料(源漏电极及数据配线材料)墨水(第1导电墨水)进行喷墨直描而形成源直描图形DLA、SD1A、SD2A(P-6)。在图1(b)中示出源直描过程。
进而,此源直描图形成为包含薄膜晶体管的沟道部、连续的导电膜。在其上喷墨直描优选为ITO的透明导电膜而形成覆盖层CAP(参照图3(b)及图4)。此时,在沟道部分的接触层NS之上也涂布覆盖层CAP。将借助喷墨直描形成覆盖层CAP的源漏电极及沟道部分作为掩模,首先对接触层(n+硅层)NS进行刻蚀,之后对硅半导体层SI进行刻蚀从而形成有源层岛(P-7)(参照图5、图6)。
在上述第1导电墨水中,在溶剂中分散包含银粒子或铜粒子等低电阻金属粒子,作为第2导电性墨水,可以使用在溶剂中分散包含透明导电粒子或金属粒子的墨水。另外,在笫1导电墨水中包含的低电阻金属粒子优选为银粒子或铜粒子之中的一个或为其两者的混合粒子,包含在第2导电墨水中的透明导电粒子使用ITO或IZO,或者IZTO等的金属氧化物粒子,作为金属粒子可以使用镍粒子。
图7为说明构成本发明的液晶显示板的第1基板(薄膜晶体管基板)的制造过程的实施例1的主要部分的图1的后续工序图。另外,图8~图12为图7的工序的主要部分构造的说明图。以下,参照图8至图12对图7的工序进行说明。
在图7(a)中,对于以形成了覆盖层CAP的源漏电极及沟道部分作为掩模进行刻蚀加工形成的有源层岛进行覆盖而形成层间绝缘膜(P-8)。在此层间绝缘膜上涂布感光光刻胶,使用曝光掩模进行曝光,使有源层岛的源漏电极部分的覆盖层部分的层间绝缘膜可溶化(P-9),显影并对该部分进行刻蚀(P-10),使源漏电极部分的覆盖层部分暴露(参照图8)。
图8(a)为包含在图7的过程(P-10)中形成的源漏电极部分的未加工部分的主要部分平面图,图8(b)为沿着图8(a)的数据电极DL部分的C-C’线的剖面图,图8(c)为沿着图8(a)的薄膜晶体管部分的D-D’线的剖面图。借助图7的过程(P-10),使源漏电极部分的覆盖层CAP暴露,其他部分被层间绝缘膜INS覆盖。但是,此时,如图9、图10所示,为了使数据配线DL的端子部分(图9)及栅配线GL的端子部分(图10)的覆盖层CAP也暴露,同时进行光刻处理和刻蚀处理。
之后,图7(b)的像素、间隙形成工序是像素电极的形成和源电极漏电极的分离加工工序。首先,在图7的过程(P-10)之后,将ITO进行前面溅射(P11)。另外,可以使用IZO、IZTO等代替ITO。此外,如图11(a)所示,涂布感光光刻胶RG、实施使数据配线、栅配线、沟道部分的ITO暴露的光刻过程(也单称其为光刻)(P-12)。在图11(b)和图11(c)中分别示出沿着图11(a)的E-E’线的剖面和沿着图11(a)的F-F’线的剖面。
对暴露部分的ITO进行刻蚀(P-13)而除去沟道部分的覆盖层CAP。在覆盖层以及数据配线端子及栅配线端子部分上使用镍膜作为覆盖层的情况下,进行此部分的刻蚀(P-14)。由此,可使沟道部分的ITO分离为源电极SD1部分和漏电极SD2部分。此时,在像素区域中作为像素电极的ITO被分离。此像素电极与源电极SD1成为一体。其后,对接触层NS进行刻蚀而形成间隙(P-15),剥离不需要的感光光刻胶而完成薄膜晶体管。此状态示于图12。此时,间隙的间隔d成为覆盖层CAP的间隔,比利用图4所示的喷墨直描产生的源电极SD1A和漏电极SD2A的墨膜的间隔D狭窄很多。比如,间隔D为大于等于10μm,与此相对,间隔d可以为小于等于4μm,可以实现高速薄膜晶体管,可以进行高精细显示。
图13为用来说明本发明的效果的工序比较图。图13的现有技术的工序A和本发明的工序B的栅形成工序和层间绝缘膜、孔形成工序是相同的,但有源层岛、源漏(S-D)形成工序和像素形成工序不同。在工序A和工序B中的栅形成工序中,通过栅金属溅射→光刻→金属刻蚀→光刻胶剥离及清洗而形成栅配线和栅电极。
在工序A中,其有源层岛、源漏(S-D)形成工序经过3层CVD光刻→接触层刻蚀→光刻胶剥离和清洗→源金属溅射→光刻→金属刻蚀→间隙刻蚀→光刻胶剥离和清洗各工序。另外,同样在层间绝缘膜、孔形成工序中,通过层间绝缘膜形成→光刻→刻蚀而形成必需的接触孔。于是,在像素形成工序中,实施ITO溅射→光刻→刻蚀→光刻胶剥离和清洗。
另一方面,本发明的工序B在接着与上述相同的栅形成工序的岛及S-D形成工序中,实施3层CVD→源的喷墨直描→接触层刻蚀。然后,在层间绝缘膜、孔形成工序之后的像素形成工序中,实施ITO溅射→光刻→刻蚀→间隙刻蚀→光刻胶剥离和清洗。
比较图13所示的上述现有技术的工序A和本发明的工序B,由于在岛和S-D形成工序中不使用光刻工序,可以削减曝光掩模的数量,可以以低成本制造液晶显示装置。
图14为用来说明本发明的效果的另一工序比较图。图14的现有技术的工序C和本发明的工序B也是栅形成工序和层间绝缘膜、孔形成工序是相同的,但有源层岛、源漏(S-D)形成工序和像素形成工序不同。在工序C和工序B中的栅形成工序中,与图13一样,通过栅金属溅射→光刻→金属刻蚀→光刻胶剥离及清洗而形成栅配线和栅电极。
在工序C中,其有源层岛、源漏(S-D)形成工序经过3层CVD→源金属溅射→光刻→金属刻蚀→接触层刻蚀→灰化→金属刻蚀→间隙刻蚀→光刻胶剥离和清洗各工序。另外,同样在层间绝缘膜、孔形成工序中,通过层间绝缘膜形成→光刻→刻蚀而形成必需的接触孔。于是,在像素形成工序中,实施ITO溅射→光刻→刻蚀→光刻胶剥离和清洗。
另一方面,在本发明的工序B中,与图13一样,在栅形成工序的后续的岛和S-D形成工序中,实施3层CVD→源的喷墨直描→接触层刻蚀。于是,在层间绝缘膜、孔形成工序之后的像素形成工序中,实施ITO溅射→光刻→刻蚀→间隙刻蚀→光刻胶剥离和清洗。
比较图14所示的上述现有技术的工序C和本发明的工序B,由于在岛和S-D形成工序中不使用光刻工序,可以削减曝光掩模的数量,可以以低成本制造液晶显示装置。
图15为说明有源矩阵型液晶显示装置的等效电路的示图。图15(a)为液晶显示板整体的电路图,图15(b)为图15(a)的像素部PXL的扩大图。在图15(a)中,在显示板PNL上以矩阵方式排列多个像素部PXL,各像素部PXL,由栅配线驱动电路GDR选择,依照来自数据配线驱动电路DDR的显示数据信号点亮。
就是说,与由栅配线驱动电路GDR选择的栅配线GL相对应,从数据配线驱动电路DDR通过数据配线DL向液晶显示板PNL的像素部PXL中的薄膜晶体管TFT供给显示数据(电压)。
如图15(b)所示,构成像素部PXL的薄膜晶体管TFT,设置在栅配线GL和数据配线DL的交叉部上。另外,薄膜晶体管TFT的栅电极GT与栅配线GL相连接,薄膜晶体管TFT的漏电极SD2与数据配线DL相连接。
薄膜晶体管TFT的源电极SD1与液晶(元件)LC的像素电极PX相连接。液晶LC在像素电极PX和共用电极CT之间,由供给像素电极PX的数据(电压)驱动。另外,用来临时保持数据的辅助电容Ca连接在漏电极SD2和辅助电容配线CL之间。
在以上的说明中,借助喷墨直描形成的布线及电极或岛形成层等,在通过喷墨涂布墨材之后,实施干燥、烧成而形成薄膜。
Claims (17)
1.一种液晶显示板的制造方法,所述液晶显示板具有:
第1基板,针对矩阵排列的多个像素的每一个形成薄膜晶体管;和
形成彩色滤光片的第2基板,
在上述第1基板和上述第2基板粘合的间隙中封入液晶,
所述液晶显示板的制造方法的特征在于:
在上述第1基板上成膜形成半导体层,在该半导体层的上层成膜形成接触层从而形成有源层,
在上述有源层之上,利用喷墨直描,涂布成为上述薄膜晶体管的源电极和漏电极的第1导电墨水,形成包含该薄膜晶体管的沟道部且连续的第1导电膜,
在上述第1导电膜之上,利用喷墨直描,涂布第2导电墨水而成为覆盖层,与该第1导电膜一起形成层叠膜,
对上述层叠膜进行构图,成为上述源电极和上述漏电极的部分形成连续的源电极和漏电极部,
将上述源电极和漏电极部作为刻蚀掩模进行上述有源层的构图而形成有源层岛。
2.如权利要求1所述的液晶显示板的制造方法,其特征在于:
上述第1导电墨水包含分散于溶剂中的低电阻金属粒子;
上述第2导电墨水包含分散于溶剂中的透明导电粒子或金属粒子。
3.如权利要求2所述的液晶显示板的制造方法,其特征在于:
包含在上述第1导电墨水中的低电阻金属粒子为银粒子或铜粒子之中的一个或为其混合粒子;
包含在上述第2导电墨水中的透明导电粒子是金属氧化物粒子,金属粒子是镍粒子。
4.一种液晶显示板的制造方法,所述液晶显示板具有:
第1基板,针对矩阵排列的多个像素的每一个形成薄膜晶体管;和
形成彩色滤光片的第2基板,
在上述第1基板和上述第2基板粘合的间隙中封入液晶,
所述液晶显示板的制造方法的特征在于:
在上述第1基板上成膜形成半导体层,在该半导体层的上层成膜形成接触层从而形成有源层;
在上述有源层之上,利用喷墨直描,涂布成为上述薄膜晶体管的源电极和漏电极的第1导电墨水,形成包含该薄膜晶体管的沟道部且连续的第1导电膜,
在上述第1导电膜之上,利用喷墨直描,涂布第2导电墨水而成为覆盖层,与该第1导电膜一起形成层叠膜,
对上述层叠膜进行构图,成为上述源电极和上述漏电极的部分形成连续的源电极和漏电极部,
将上述源电极和漏电极部作为刻蚀掩模进行上述有源层的构图而形成有源层岛,
形成透明导电膜,覆盖包含上述有源层岛上的源电极和漏电极部的基板的表面,
涂布光刻胶,利用光刻技术使上述沟道部的上述透明导电膜暴露,刻蚀除去该暴露部分的上述透明导电膜而使上层的接触层暴露,
对暴露的接触层进行刻蚀而在下层的半导体层上形成沟道部。
5.如权利要求4所述的液晶显示板的制造方法,其特征在于:
上述第1导电墨水包含分散于溶剂中的低电阻金属粒子;
上述第2导电墨水包含分散于溶剂中的透明导电粒子或金属粒子。
6.如权利要求4所述的液晶显示板的制造方法,其特征在于:
包含在上述第1导电墨水中的低电阻金属粒子为银粒子或铜粒子之中的一个或为其混合粒子;
包含在上述第2导电墨水中的透明导电粒子是金属氧化物粒子,金属粒子是镍粒子。
7.如权利要求4所述的液晶显示板的制造方法,其特征在于:
上述透明导电膜是ITO或IZO或者IZTO中的一个。
8.一种液晶显示板,具有:
第1基板,针对矩阵排列的多个像素的每一个形成薄膜晶体管;和
形成彩色滤光片的第2基板,
在上述第1基板和上述第2基板粘合的间隙中封入液晶,
所述液晶显示板的特征在于:
上述薄膜晶体管,具有:
栅配线;从该栅配线延伸的栅电极;数据配线;从该数据配线延伸的数据电极;像素电极;与上述漏电极在同一层中并与上述像素电极相连接的源电极;由半导体层和在该半导体层的上层中形成的接触层构成的有源层,
在上述第1基板中具有的薄膜晶体管的上述漏电极及上述源电极由层叠膜和透明导电膜构成,
所述层叠膜是在通过喷墨直描的涂布形成的第1导电膜之上,与同样通过喷墨直描的涂布形成而成为覆盖层的第2导电膜的层叠膜,
所述透明导电膜成膜于该层叠膜的上层。
9.如权利要求8所述的液晶显示板,其特征在于:
上述透明导电膜,在上述像素的区域中构成和上述漏电极或源电极的一方一体的像素电极。
10.如权利要求8所述的液晶显示板,其特征在于:
上述透明导电膜,在上述数据配线的区域中和上述漏电极或源电极的另一方在该数据配线中成为一体。
11.如权利要求8所述的液晶显示板,其特征在于:
上述第1导电膜是低电阻金属薄膜;
上述第2导电膜是透明导电膜或金属薄膜。
12.如权利要求11所述的液晶显示板,其特征在于:
上述低电阻金属薄膜为银粒子的烧成膜或铜粒子的烧成膜之中的一个或为其混合粒子的烧成膜;
上述透明导电薄膜是金属氧化物粒子的烧成膜或金属粒子的烧成膜。
13.如权利要求12所述的液晶显示板,其特征在于:
上述金属氧化物粒子是ITO或IZO或者IZTO的粒子,上述金属粒子是镍粒子。
14.如权利要求8所述的液晶显示板,其特征在于:
构成上述漏电极和上述源电极的上述层叠膜的上述覆盖层的对置间隔比该层叠膜的上述第1导电膜的对置间隔狭窄。
15.如权利要求8所述的液晶显示板,其特征在于:
构成上述源电极和上述漏电极的上述透明导电膜的对置间隔比上述层叠膜的上述第1导电膜的对置间隔狭窄。
16.如权利要求8所述的液晶显示板,其特征在于:
构成上述薄膜晶体管的栅配线及栅电极,是借助导电墨水的喷墨进行涂布和烧成而形成的。
17.如权利要求8所述的液晶显示板,其特征在于:
构成上述薄膜晶体管的数据配线,是借助导电墨水的喷墨进行涂布和烧成而形成的。
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EP (1) | EP1898461A3 (zh) |
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CN102650763B (zh) * | 2011-08-26 | 2015-01-07 | 北京京东方光电科技有限公司 | 一种液晶显示屏及其制造方法与显示器 |
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CN100578327C (zh) | 2010-01-06 |
JP2008066494A (ja) | 2008-03-21 |
TW200828450A (en) | 2008-07-01 |
EP1898461A3 (en) | 2010-08-11 |
EP1898461A2 (en) | 2008-03-12 |
KR20080023109A (ko) | 2008-03-12 |
KR100922272B1 (ko) | 2009-10-15 |
US20080062344A1 (en) | 2008-03-13 |
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