JP2008066316A - 裏面接合型太陽電池及びその製造方法 - Google Patents

裏面接合型太陽電池及びその製造方法 Download PDF

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Publication number
JP2008066316A
JP2008066316A JP2004376604A JP2004376604A JP2008066316A JP 2008066316 A JP2008066316 A JP 2008066316A JP 2004376604 A JP2004376604 A JP 2004376604A JP 2004376604 A JP2004376604 A JP 2004376604A JP 2008066316 A JP2008066316 A JP 2008066316A
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JP
Japan
Prior art keywords
type diffusion
diffusion layer
semiconductor substrate
type
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004376604A
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English (en)
Japanese (ja)
Inventor
Shunichi Igarashi
俊一 五十嵐
Takeshi Akatsuka
武 赤塚
Tsutomu Onishi
力 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Naoetsu Electronics Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Naoetsu Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Naoetsu Electronics Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2004376604A priority Critical patent/JP2008066316A/ja
Priority to PCT/JP2005/019384 priority patent/WO2006075427A1/fr
Priority to TW094140452A priority patent/TW200635057A/zh
Publication of JP2008066316A publication Critical patent/JP2008066316A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2004376604A 2004-12-27 2004-12-27 裏面接合型太陽電池及びその製造方法 Pending JP2008066316A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004376604A JP2008066316A (ja) 2004-12-27 2004-12-27 裏面接合型太陽電池及びその製造方法
PCT/JP2005/019384 WO2006075427A1 (fr) 2004-12-27 2005-10-21 Pile solaire à jonction de renfort et procédé de fabrication idoine
TW094140452A TW200635057A (en) 2004-12-27 2005-11-17 Back junction solar cell and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004376604A JP2008066316A (ja) 2004-12-27 2004-12-27 裏面接合型太陽電池及びその製造方法

Publications (1)

Publication Number Publication Date
JP2008066316A true JP2008066316A (ja) 2008-03-21

Family

ID=36677461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004376604A Pending JP2008066316A (ja) 2004-12-27 2004-12-27 裏面接合型太陽電池及びその製造方法

Country Status (3)

Country Link
JP (1) JP2008066316A (fr)
TW (1) TW200635057A (fr)
WO (1) WO2006075427A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067972A (ja) * 2008-09-09 2010-03-25 Palo Alto Research Center Inc 交差指型背面接触太陽電池、及び交差指型背面接触太陽電池の製造方法
JP2012501550A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド 印刷誘電体障壁を使用するバックコンタクト太陽電池
US8846431B2 (en) 2011-03-03 2014-09-30 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
JP2014207310A (ja) * 2013-04-12 2014-10-30 トヨタ自動車株式会社 太陽電池セル
US9150966B2 (en) 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
JP2016502283A (ja) * 2012-12-21 2016-01-21 サンパワー コーポレイション 薄いシリコン太陽電池の金属箔援用製造
KR20160141773A (ko) * 2014-03-28 2016-12-09 선파워 코포레이션 태양 전지의 포일 기반 금속화

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5303828B2 (ja) * 2006-09-14 2013-10-02 大日本印刷株式会社 有機薄膜太陽電池
WO2009025147A1 (fr) * 2007-08-23 2009-02-26 Sharp Kabushiki Kaisha Cellule solaire du type à connexion par la surface arrière, cellule solaire du type à connexion par la surface arrière ayant une carte de câblage, chaîne de cellules solaires et module de cellule solaire
KR101149173B1 (ko) 2010-12-17 2012-05-25 현대중공업 주식회사 후면전극형 태양전지 및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5641362A (en) * 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
JP2002057352A (ja) * 2000-06-02 2002-02-22 Honda Motor Co Ltd 太陽電池およびその製造方法
JP2003124483A (ja) * 2001-10-17 2003-04-25 Toyota Motor Corp 光起電力素子
JP2004071763A (ja) * 2002-08-05 2004-03-04 Toyota Motor Corp 光起電力素子

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012501550A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド 印刷誘電体障壁を使用するバックコンタクト太陽電池
KR101607088B1 (ko) 2008-09-09 2016-03-29 팔로 알토 리서치 센터 인코포레이티드 레이저 절제 홈들을 갖는 맞물린 후방 접촉 실리콘 태양 전지
JP2010067972A (ja) * 2008-09-09 2010-03-25 Palo Alto Research Center Inc 交差指型背面接触太陽電池、及び交差指型背面接触太陽電池の製造方法
US9054237B2 (en) 2008-09-09 2015-06-09 Palo Alto Research Center Incorporated Interdigitated back contact silicon solar cells fabrication using diffusion barriers
US9150966B2 (en) 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
US8846431B2 (en) 2011-03-03 2014-09-30 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
US8962424B2 (en) 2011-03-03 2015-02-24 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
JP2016502283A (ja) * 2012-12-21 2016-01-21 サンパワー コーポレイション 薄いシリコン太陽電池の金属箔援用製造
JP2014207310A (ja) * 2013-04-12 2014-10-30 トヨタ自動車株式会社 太陽電池セル
KR20160141773A (ko) * 2014-03-28 2016-12-09 선파워 코포레이션 태양 전지의 포일 기반 금속화
JP2017510985A (ja) * 2014-03-28 2017-04-13 サンパワー コーポレイション 太陽電池のホイルベースの金属被覆法
US10615296B2 (en) 2014-03-28 2020-04-07 Sunpower Corporation Foil-based metallization of solar cells
KR102373266B1 (ko) * 2014-03-28 2022-03-10 선파워 코포레이션 태양 전지의 포일 기반 금속화
US11967657B2 (en) 2014-03-28 2024-04-23 Maxeon Solar Pte. Ltd. Foil-based metallization of solar cells

Also Published As

Publication number Publication date
TW200635057A (en) 2006-10-01
WO2006075427A1 (fr) 2006-07-20

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