JP6395979B1 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP6395979B1 JP6395979B1 JP2018519783A JP2018519783A JP6395979B1 JP 6395979 B1 JP6395979 B1 JP 6395979B1 JP 2018519783 A JP2018519783 A JP 2018519783A JP 2018519783 A JP2018519783 A JP 2018519783A JP 6395979 B1 JP6395979 B1 JP 6395979B1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 143
- 239000004065 semiconductor Substances 0.000 claims abstract description 455
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 239000012535 impurity Substances 0.000 claims description 5
- 238000010248 power generation Methods 0.000 description 31
- 239000000463 material Substances 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 14
- 230000004048 modification Effects 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 6
- 230000008033 biological extinction Effects 0.000 description 5
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- 238000010438 heat treatment Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
Description
図1は、本発明の実施の形態1に係る光電変換装置100の構成を説明するための図である。図1(a)は、本発明の実施の形態1に係る光電変換装置100の平面図である。図1(b)は、本発明の実施の形態1に係る光電変換装置100の側面図である。
本実施の形態の構成は、半導体層3aが、電極4,6の両方に接続された構成(以下、「構成Ct2」ともいう)である。以下においては、構成Ct2が適用された光電変換装置を、「光電変換装置100A」ともいう。
本実施の形態の構成は、片面電極型の光電変換装置において、半導体層の配置が特徴的である構成(以下、「構成Ct3」ともいう)である。以下においては、構成Ct3が適用された光電変換装置を、「光電変換装置100B」ともいう。
本変形例の構成は、半導体層と電極との接続箇所に特徴を有する構成(以下、「構成Ctm1」ともいう)である。以下においては、構成Ctm1が適用された光電変換装置を、「光電変換装置100m」ともいう。光電変換装置100mは、実施の形態1の光電変換装置100と比較して、半導体層3aと電極4との接続箇所の形状、および、半導体層3bと電極6との接続箇所の形状が異なる。光電変換装置100mのそれ以外の構成は、光電変換装置100と同様なので詳細な説明は繰り返さない。
以上、本発明に係る光電変換装置について、各実施の形態および変形例に基づいて説明したが、本発明は、当該各実施の形態および変形例に限定されるものではない。本発明の主旨を逸脱しない範囲内で、当業者が思いつく変形を各実施の形態および変形例に施したものも、本発明に含まれる。つまり、本発明は、その発明の範囲内において、各実施の形態、変形例を自由に組み合わせたり、各実施の形態、変形例を適宜、変形、省略することが可能である。
Claims (6)
- 光を使用して、電力を得る機能を有する光電変換装置であって、
主面を有する第1導電型の半導体基板(10)と、
複数の第1電極と、
第2導電型の複数の第1半導体層(3a)と、
前記第2導電型の複数の第2半導体層(3b)とを備え、
前記半導体基板(10)の前記主面上には、前記複数の第1電極が設けられており、
平面視において、前記複数の第1電極は、第1の間隔(Gp1)を空けて平行に並び、
前記複数の第1電極が前記複数の第1半導体層(3a)の上部を覆うように、当該複数の第1半導体層(3a)は、前記半導体基板(10)の前記主面側に設けられており、
前記複数の第1半導体層(3a)は、前記半導体基板(10)と接し、
前記複数の第1半導体層(3a)に含まれる、隣接する2つの第1半導体層(3a)の間の領域には、前記複数の第2半導体層(3b)が第2の間隔(Gp3)を空けて並び、
前記2つの第1半導体層(3a)に含まれる一方の第1半導体層(3a)と、前記複数の第2半導体層(3b)のうち、前記一方の第1半導体層(3a)と隣接する第2半導体層(3b)との間隔は前記第2の間隔(Gp3)であり、
前記第2の間隔(Gp3)は、前記半導体基板(10)の厚み以下である
光電変換装置。 - 各前記第1半導体層(3a)の不純物濃度は、各前記第2半導体層(3b)の不純物濃度より大きい
請求項1に記載の光電変換装置。 - 各前記第1半導体層(3a)の深さは、各前記第2半導体層(3b)の深さより大きい
請求項1に記載の光電変換装置。 - 前記主面は、凹凸形状を有し、
前記半導体基板(10)において、各前記第1半導体層(3a)および各前記第2半導体層(3b)の各々の底の位置は、前記凹凸形状を有する前記主面の凹部の底の位置よりも、深い位置である
請求項3に記載の光電変換装置。 - 前記光電変換装置は、さらに、
前記複数の第1電極と直交する、複数の第2電極(6)を備える
請求項1に記載の光電変換装置。 - 前記光電変換装置は、さらに、
前記複数の第2電極(6)に沿って前記半導体基板(10)の前記主面側に設けられている前記第2導電型の複数の第3半導体層(3a)を備える
請求項5に記載の光電変換装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/022166 WO2018229946A1 (ja) | 2017-06-15 | 2017-06-15 | 光電変換装置 |
Publications (2)
Publication Number | Publication Date |
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JP6395979B1 true JP6395979B1 (ja) | 2018-09-26 |
JPWO2018229946A1 JPWO2018229946A1 (ja) | 2019-06-27 |
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JP2018519783A Expired - Fee Related JP6395979B1 (ja) | 2017-06-15 | 2017-06-15 | 光電変換装置 |
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JP (1) | JP6395979B1 (ja) |
TW (1) | TWI649886B (ja) |
WO (1) | WO2018229946A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001203373A (ja) * | 2000-01-19 | 2001-07-27 | Natl Inst Of Advanced Industrial Science & Technology Meti | 光電変換素子 |
JP2010161309A (ja) * | 2009-01-09 | 2010-07-22 | Sharp Corp | 半導体装置、半導体装置の製造方法および太陽電池の製造方法 |
US20150144183A1 (en) * | 2013-11-28 | 2015-05-28 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
WO2015151288A1 (ja) * | 2014-04-04 | 2015-10-08 | 三菱電機株式会社 | 太陽電池の製造方法および太陽電池 |
JP2016111357A (ja) * | 2014-12-09 | 2016-06-20 | 三菱電機株式会社 | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 |
WO2017047375A1 (ja) * | 2015-09-14 | 2017-03-23 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010283339A (ja) * | 2009-05-02 | 2010-12-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置及びその作製方法 |
CN103035779A (zh) * | 2011-10-06 | 2013-04-10 | 三星Sdi株式会社 | 光伏装置 |
TWI496305B (zh) * | 2014-01-10 | 2015-08-11 | Motech Ind Inc | 太陽能電池及其製作方法 |
TWI573284B (zh) * | 2015-03-26 | 2017-03-01 | 茂迪股份有限公司 | 太陽能電池、其模組及其製造方法 |
-
2017
- 2017-06-15 JP JP2018519783A patent/JP6395979B1/ja not_active Expired - Fee Related
- 2017-06-15 WO PCT/JP2017/022166 patent/WO2018229946A1/ja active Application Filing
- 2017-08-04 TW TW106126396A patent/TWI649886B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001203373A (ja) * | 2000-01-19 | 2001-07-27 | Natl Inst Of Advanced Industrial Science & Technology Meti | 光電変換素子 |
JP2010161309A (ja) * | 2009-01-09 | 2010-07-22 | Sharp Corp | 半導体装置、半導体装置の製造方法および太陽電池の製造方法 |
US20150144183A1 (en) * | 2013-11-28 | 2015-05-28 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
WO2015151288A1 (ja) * | 2014-04-04 | 2015-10-08 | 三菱電機株式会社 | 太陽電池の製造方法および太陽電池 |
JP2016111357A (ja) * | 2014-12-09 | 2016-06-20 | 三菱電機株式会社 | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 |
WO2017047375A1 (ja) * | 2015-09-14 | 2017-03-23 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
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Publication number | Publication date |
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TWI649886B (zh) | 2019-02-01 |
JPWO2018229946A1 (ja) | 2019-06-27 |
TW201906181A (zh) | 2019-02-01 |
WO2018229946A1 (ja) | 2018-12-20 |
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