TWI649886B - 光電變換裝置 - Google Patents
光電變換裝置 Download PDFInfo
- Publication number
- TWI649886B TWI649886B TW106126396A TW106126396A TWI649886B TW I649886 B TWI649886 B TW I649886B TW 106126396 A TW106126396 A TW 106126396A TW 106126396 A TW106126396 A TW 106126396A TW I649886 B TWI649886 B TW I649886B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor layer
- electrode
- photoelectric conversion
- conversion device
- semiconductor
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 144
- 239000004065 semiconductor Substances 0.000 claims abstract description 439
- 239000000758 substrate Substances 0.000 claims abstract description 131
- 238000010248 power generation Methods 0.000 description 29
- 238000002161 passivation Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 14
- 230000008033 biological extinction Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2017/022166 WO2018229946A1 (ja) | 2017-06-15 | 2017-06-15 | 光電変換装置 |
| ??PCT/JP2017/022166 | 2017-06-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI649886B true TWI649886B (zh) | 2019-02-01 |
| TW201906181A TW201906181A (zh) | 2019-02-01 |
Family
ID=63668420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106126396A TWI649886B (zh) | 2017-06-15 | 2017-08-04 | 光電變換裝置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6395979B1 (ja) |
| TW (1) | TWI649886B (ja) |
| WO (1) | WO2018229946A1 (ja) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201110375A (en) * | 2009-05-02 | 2011-03-16 | Semiconductor Energy Lab | Photoelectric conversion device and manufacturing method thereof |
| CN103035779A (zh) * | 2011-10-06 | 2013-04-10 | 三星Sdi株式会社 | 光伏装置 |
| TW201528533A (zh) * | 2014-01-10 | 2015-07-16 | Motech Ind Inc | 太陽能電池及其製作方法 |
| TW201635574A (zh) * | 2015-03-26 | 2016-10-01 | 茂迪股份有限公司 | 太陽能電池、其模組及其製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3300812B2 (ja) * | 2000-01-19 | 2002-07-08 | 独立行政法人産業技術総合研究所 | 光電変換素子 |
| JP2010161309A (ja) * | 2009-01-09 | 2010-07-22 | Sharp Corp | 半導体装置、半導体装置の製造方法および太陽電池の製造方法 |
| KR101627204B1 (ko) * | 2013-11-28 | 2016-06-03 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| JP6340069B2 (ja) * | 2014-04-04 | 2018-06-06 | 三菱電機株式会社 | 太陽電池の製造方法 |
| JP6422426B2 (ja) * | 2014-12-09 | 2018-11-14 | 三菱電機株式会社 | 太陽電池 |
| CN108028290B (zh) * | 2015-09-14 | 2019-09-03 | 夏普株式会社 | 光电转换元件 |
-
2017
- 2017-06-15 JP JP2018519783A patent/JP6395979B1/ja not_active Expired - Fee Related
- 2017-06-15 WO PCT/JP2017/022166 patent/WO2018229946A1/ja active Application Filing
- 2017-08-04 TW TW106126396A patent/TWI649886B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201110375A (en) * | 2009-05-02 | 2011-03-16 | Semiconductor Energy Lab | Photoelectric conversion device and manufacturing method thereof |
| CN103035779A (zh) * | 2011-10-06 | 2013-04-10 | 三星Sdi株式会社 | 光伏装置 |
| TW201528533A (zh) * | 2014-01-10 | 2015-07-16 | Motech Ind Inc | 太陽能電池及其製作方法 |
| TW201635574A (zh) * | 2015-03-26 | 2016-10-01 | 茂迪股份有限公司 | 太陽能電池、其模組及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201906181A (zh) | 2019-02-01 |
| JP6395979B1 (ja) | 2018-09-26 |
| WO2018229946A1 (ja) | 2018-12-20 |
| JPWO2018229946A1 (ja) | 2019-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4334455B2 (ja) | 太陽電池モジュール | |
| EP2261999B1 (en) | Solar cell element and solar cell module | |
| JP4656996B2 (ja) | 太陽電池 | |
| JP2015130527A (ja) | 太陽電池及びその製造方法 | |
| KR101649060B1 (ko) | 태양전지 셀의 제조 방법 | |
| JP6207414B2 (ja) | 光起電力素子およびその製造方法 | |
| JP4937233B2 (ja) | 太陽電池用基板の粗面化方法および太陽電池セルの製造方法 | |
| KR101699312B1 (ko) | 태양 전지 및 그 제조 방법 | |
| TWI649886B (zh) | 光電變換裝置 | |
| JP2010177444A (ja) | 太陽電池素子および太陽電池素子の製造方法 | |
| JP4467337B2 (ja) | 太陽電池モジュール | |
| JP2005260157A (ja) | 太陽電池セルおよび太陽電池モジュール | |
| TW201347209A (zh) | 太陽能電池單元的製造方法及太陽能電池單元 | |
| KR101757877B1 (ko) | 태양 전지 및 그의 제조 방법 | |
| TWI509816B (zh) | 具有寬窄電極區塊之太陽能電池及使用其之太陽能電池模組 | |
| JP5029921B2 (ja) | 太陽電池セルの製造方法 | |
| KR20190041989A (ko) | 태양 전지 제조 방법 및 태양 전지 | |
| CN112219284A (zh) | 太阳能单电池、太阳能电池组件和太阳能单电池的制造方法 | |
| TW201528533A (zh) | 太陽能電池及其製作方法 | |
| TWI555216B (zh) | Light power device and its manufacturing method, light from the power module | |
| KR101523272B1 (ko) | 이온 임플란테이션을 이용한 태양 전지 텍스쳐링 방법 | |
| JP5718782B2 (ja) | 光起電力装置の製造方法 | |
| TWM498964U (zh) | 太陽能電池結構 | |
| TWI445186B (zh) | 具受光面電極的非線性設計的太陽能電池 | |
| TWI517429B (zh) | 太陽能電池結構、製造方法及其製程載具 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |