JP2008053394A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008053394A5 JP2008053394A5 JP2006227265A JP2006227265A JP2008053394A5 JP 2008053394 A5 JP2008053394 A5 JP 2008053394A5 JP 2006227265 A JP2006227265 A JP 2006227265A JP 2006227265 A JP2006227265 A JP 2006227265A JP 2008053394 A5 JP2008053394 A5 JP 2008053394A5
- Authority
- JP
- Japan
- Prior art keywords
- wave laser
- continuous wave
- region
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 14
- 238000000034 method Methods 0.000 claims 10
- 230000001678 irradiating effect Effects 0.000 claims 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 2
- 238000006356 dehydrogenation reaction Methods 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006227265A JP5085902B2 (ja) | 2006-08-24 | 2006-08-24 | 表示装置の製造方法 |
| US11/882,828 US7732268B2 (en) | 2006-08-24 | 2007-08-06 | Manufacturing method of display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006227265A JP5085902B2 (ja) | 2006-08-24 | 2006-08-24 | 表示装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008053394A JP2008053394A (ja) | 2008-03-06 |
| JP2008053394A5 true JP2008053394A5 (enExample) | 2009-07-09 |
| JP5085902B2 JP5085902B2 (ja) | 2012-11-28 |
Family
ID=39197202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006227265A Expired - Fee Related JP5085902B2 (ja) | 2006-08-24 | 2006-08-24 | 表示装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7732268B2 (enExample) |
| JP (1) | JP5085902B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5068972B2 (ja) * | 2006-09-12 | 2012-11-07 | 富士フイルム株式会社 | レーザアニール装置、半導体膜基板、素子基板、及び電気光学装置 |
| EP2328169A1 (en) * | 2008-09-18 | 2011-06-01 | Sharp Kabushiki Kaisha | Motherboard, motherboard manufacturing method and device board |
| JP2010108957A (ja) * | 2008-10-28 | 2010-05-13 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
| US9111803B2 (en) * | 2011-10-03 | 2015-08-18 | Joled Inc. | Thin-film device, thin-film device array, and method of manufacturing thin-film device |
| KR102014167B1 (ko) * | 2012-12-06 | 2019-10-22 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치 |
| WO2016068713A1 (en) * | 2014-10-30 | 2016-05-06 | Technische Universiteit Delft | Low-temperature formation of thin-film structures |
| NL2013715B1 (en) * | 2014-10-30 | 2016-10-04 | Univ Delft Tech | Low-temperature formation of thin-film structures. |
| JP7203417B2 (ja) | 2019-01-31 | 2023-01-13 | 株式会社ブイ・テクノロジー | レーザアニール方法、レーザアニール装置、およびｔｆｔ基板 |
| JP7632873B2 (ja) * | 2021-02-26 | 2025-02-19 | 株式会社ブイ・テクノロジー | レーザアニール装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62160781A (ja) * | 1986-01-09 | 1987-07-16 | Agency Of Ind Science & Technol | レ−ザ光照射装置 |
| JP3026520B2 (ja) * | 1991-08-23 | 2000-03-27 | 東京エレクトロン株式会社 | 液晶表示装置の製造装置 |
| JPH0661172A (ja) * | 1992-08-07 | 1994-03-04 | Fuji Xerox Co Ltd | エキシマレ−ザアニ−ル装置 |
| SG46344A1 (en) | 1992-11-16 | 1998-02-20 | Tokyo Electron Ltd | Method and apparatus for manufacturing a liquid crystal display substrate and apparatus and method for evaluating semiconductor crystals |
| JP3196132B2 (ja) * | 1992-11-16 | 2001-08-06 | 東京エレクトロン株式会社 | 液晶ディスプレイ基板の製造方法、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置 |
| JPH0883765A (ja) * | 1994-07-14 | 1996-03-26 | Sanyo Electric Co Ltd | 多結晶半導体膜の製造方法 |
| TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
| WO2001061734A1 (en) * | 2000-02-15 | 2001-08-23 | Matsushita Electric Industrial Co., Ltd. | Non-single crystal film, substrate with non-single crystal film, method and apparatus for producing the same, method and apparatus for inspecting the same, thin film transistor, thin film transistor array and image display using it |
| JP2002064060A (ja) * | 2000-08-22 | 2002-02-28 | Matsushita Electric Ind Co Ltd | 非結晶薄膜のレーザーアニール方法とその装置 |
| US6737672B2 (en) * | 2000-08-25 | 2004-05-18 | Fujitsu Limited | Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus |
| JP2002158173A (ja) | 2000-09-05 | 2002-05-31 | Sony Corp | 薄膜の製造方法、半導体薄膜、半導体装置、半導体薄膜の製造方法、及び半導体薄膜製造装置 |
| KR20020019419A (ko) | 2000-09-05 | 2002-03-12 | 이데이 노부유끼 | 박막 제조 방법, 반도체 박막, 반도체 디바이스, 반도체박막 제조 방법, 및 반도체 박막 제조 장치 |
-
2006
- 2006-08-24 JP JP2006227265A patent/JP5085902B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-06 US US11/882,828 patent/US7732268B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8598588B2 (en) | Systems and methods for processing a film, and thin films | |
| CN103700695B (zh) | 低温多晶硅薄膜及其制备方法、晶体管 | |
| CN1638038A (zh) | 激光束图案掩模及采用它的结晶方法 | |
| JP2008053394A5 (enExample) | ||
| JP2002313721A5 (enExample) | ||
| KR20050057166A (ko) | 레이저 가공 방법 및 레이저 가공 장치 | |
| JP2011165717A5 (enExample) | ||
| TW201248691A (en) | Laser processing device | |
| JP2005197658A (ja) | 多結晶シリコン膜の形成方法 | |
| CN102339738B (zh) | 激光辐照设备 | |
| WO2013172965A1 (en) | Advanced excimer laser annealing for thin films | |
| US6875547B2 (en) | Mask for crystallizing amorphous | |
| JPH08201846A (ja) | レーザーアニール法及び液晶表示装置 | |
| JP7154592B2 (ja) | レーザアニール方法およびレーザアニール装置 | |
| KR101777289B1 (ko) | 연속측면고상화(Ｓｅｑｕｅｎｔｉａｌ Ｌａｔｅｒａｌ Ｓｏｌｉｄｉｆｉｃａｔｉｏｎ:ＳＬＳ)를 이용한 결정화 장치 | |
| JP2007134648A5 (enExample) | ||
| WO2004066372A1 (ja) | 結晶化半導体素子およびその製造方法ならびに結晶化装置 | |
| JP2007281465A (ja) | 多結晶膜の形成方法 | |
| JP5339322B2 (ja) | レーザによるシリコン結晶成長方法 | |
| KR100663298B1 (ko) | 다결정실리콘 박막트랜지스터의 다결정 실리콘막 형성방법 | |
| US7879511B2 (en) | Sequential lateral solidification mask | |
| KR100781440B1 (ko) | 다결정실리콘막 형성방법 | |
| JP4881197B2 (ja) | 結晶化パターンおよびこれを用いた非晶質シリコンの結晶化方法 | |
| US20100103401A1 (en) | Method and device for forming poly-silicon film | |
| US7649206B2 (en) | Sequential lateral solidification mask |