JP2007134648A5 - - Google Patents

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Publication number
JP2007134648A5
JP2007134648A5 JP2005328865A JP2005328865A JP2007134648A5 JP 2007134648 A5 JP2007134648 A5 JP 2007134648A5 JP 2005328865 A JP2005328865 A JP 2005328865A JP 2005328865 A JP2005328865 A JP 2005328865A JP 2007134648 A5 JP2007134648 A5 JP 2007134648A5
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JP
Japan
Prior art keywords
impurity
region
display device
semiconductor film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2005328865A
Other languages
English (en)
Japanese (ja)
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JP5128767B2 (ja
JP2007134648A (ja
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Publication date
Application filed filed Critical
Priority to JP2005328865A priority Critical patent/JP5128767B2/ja
Priority claimed from JP2005328865A external-priority patent/JP5128767B2/ja
Priority to US11/590,882 priority patent/US7456433B2/en
Publication of JP2007134648A publication Critical patent/JP2007134648A/ja
Priority to US12/285,997 priority patent/US7727784B2/en
Publication of JP2007134648A5 publication Critical patent/JP2007134648A5/ja
Application granted granted Critical
Publication of JP5128767B2 publication Critical patent/JP5128767B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005328865A 2005-11-14 2005-11-14 表示装置とその製造方法 Expired - Fee Related JP5128767B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005328865A JP5128767B2 (ja) 2005-11-14 2005-11-14 表示装置とその製造方法
US11/590,882 US7456433B2 (en) 2005-11-14 2006-11-01 Display device and fabrication method thereof
US12/285,997 US7727784B2 (en) 2005-11-14 2008-10-17 Display device and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005328865A JP5128767B2 (ja) 2005-11-14 2005-11-14 表示装置とその製造方法

Publications (3)

Publication Number Publication Date
JP2007134648A JP2007134648A (ja) 2007-05-31
JP2007134648A5 true JP2007134648A5 (enExample) 2008-11-13
JP5128767B2 JP5128767B2 (ja) 2013-01-23

Family

ID=38039820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005328865A Expired - Fee Related JP5128767B2 (ja) 2005-11-14 2005-11-14 表示装置とその製造方法

Country Status (2)

Country Link
US (2) US7456433B2 (enExample)
JP (1) JP5128767B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009260044A (ja) * 2008-04-17 2009-11-05 Hitachi Displays Ltd 表示装置
US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
WO2011105183A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
CN105632905B (zh) * 2016-01-21 2018-05-11 武汉华星光电技术有限公司 低温多晶硅薄膜晶体管单元及其制作方法
KR102556021B1 (ko) 2017-10-13 2023-07-17 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조방법
TWI813503B (zh) * 2022-11-10 2023-08-21 友達光電股份有限公司 顯示裝置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
TW382164B (en) * 1996-04-08 2000-02-11 Hitachi Ltd Semiconductor IC device with tunnel current free MOS transistors for power supply intercept of main logic
US5920097A (en) * 1997-03-26 1999-07-06 Advanced Micro Devices, Inc. Compact, dual-transistor integrated circuit
TW408351B (en) * 1997-10-17 2000-10-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
US7045444B2 (en) * 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
US6791106B2 (en) * 2001-12-26 2004-09-14 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP4030758B2 (ja) * 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4474108B2 (ja) * 2002-09-02 2010-06-02 株式会社 日立ディスプレイズ 表示装置とその製造方法および製造装置
JP4364739B2 (ja) * 2004-07-15 2009-11-18 シャープ株式会社 半導体装置およびその製造方法

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