JP5085902B2 - 表示装置の製造方法 - Google Patents

表示装置の製造方法 Download PDF

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Publication number
JP5085902B2
JP5085902B2 JP2006227265A JP2006227265A JP5085902B2 JP 5085902 B2 JP5085902 B2 JP 5085902B2 JP 2006227265 A JP2006227265 A JP 2006227265A JP 2006227265 A JP2006227265 A JP 2006227265A JP 5085902 B2 JP5085902 B2 JP 5085902B2
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Japan
Prior art keywords
continuous wave
wave laser
region
manufacturing
substrate
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Expired - Fee Related
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JP2006227265A
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English (en)
Japanese (ja)
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JP2008053394A (ja
JP2008053394A5 (enExample
Inventor
秀明 新本
幹雄 本郷
秋夫 矢▲崎▼
剛史 野田
拓生 海東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
Original Assignee
Panasonic Liquid Crystal Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Liquid Crystal Display Co Ltd filed Critical Panasonic Liquid Crystal Display Co Ltd
Priority to JP2006227265A priority Critical patent/JP5085902B2/ja
Priority to US11/882,828 priority patent/US7732268B2/en
Publication of JP2008053394A publication Critical patent/JP2008053394A/ja
Publication of JP2008053394A5 publication Critical patent/JP2008053394A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2006227265A 2006-08-24 2006-08-24 表示装置の製造方法 Expired - Fee Related JP5085902B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006227265A JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法
US11/882,828 US7732268B2 (en) 2006-08-24 2007-08-06 Manufacturing method of display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006227265A JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2008053394A JP2008053394A (ja) 2008-03-06
JP2008053394A5 JP2008053394A5 (enExample) 2009-07-09
JP5085902B2 true JP5085902B2 (ja) 2012-11-28

Family

ID=39197202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006227265A Expired - Fee Related JP5085902B2 (ja) 2006-08-24 2006-08-24 表示装置の製造方法

Country Status (2)

Country Link
US (1) US7732268B2 (enExample)
JP (1) JP5085902B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5068972B2 (ja) * 2006-09-12 2012-11-07 富士フイルム株式会社 レーザアニール装置、半導体膜基板、素子基板、及び電気光学装置
EP2328169A1 (en) * 2008-09-18 2011-06-01 Sharp Kabushiki Kaisha Motherboard, motherboard manufacturing method and device board
JP2010108957A (ja) * 2008-10-28 2010-05-13 Hitachi Displays Ltd 表示装置およびその製造方法
US9111803B2 (en) * 2011-10-03 2015-08-18 Joled Inc. Thin-film device, thin-film device array, and method of manufacturing thin-film device
KR102014167B1 (ko) * 2012-12-06 2019-10-22 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치
WO2016068713A1 (en) * 2014-10-30 2016-05-06 Technische Universiteit Delft Low-temperature formation of thin-film structures
NL2013715B1 (en) * 2014-10-30 2016-10-04 Univ Delft Tech Low-temperature formation of thin-film structures.
JP7203417B2 (ja) 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
JP7632873B2 (ja) * 2021-02-26 2025-02-19 株式会社ブイ・テクノロジー レーザアニール装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160781A (ja) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol レ−ザ光照射装置
JP3026520B2 (ja) * 1991-08-23 2000-03-27 東京エレクトロン株式会社 液晶表示装置の製造装置
JPH0661172A (ja) * 1992-08-07 1994-03-04 Fuji Xerox Co Ltd エキシマレ−ザアニ−ル装置
SG46344A1 (en) 1992-11-16 1998-02-20 Tokyo Electron Ltd Method and apparatus for manufacturing a liquid crystal display substrate and apparatus and method for evaluating semiconductor crystals
JP3196132B2 (ja) * 1992-11-16 2001-08-06 東京エレクトロン株式会社 液晶ディスプレイ基板の製造方法、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置
JPH0883765A (ja) * 1994-07-14 1996-03-26 Sanyo Electric Co Ltd 多結晶半導体膜の製造方法
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
WO2001061734A1 (en) * 2000-02-15 2001-08-23 Matsushita Electric Industrial Co., Ltd. Non-single crystal film, substrate with non-single crystal film, method and apparatus for producing the same, method and apparatus for inspecting the same, thin film transistor, thin film transistor array and image display using it
JP2002064060A (ja) * 2000-08-22 2002-02-28 Matsushita Electric Ind Co Ltd 非結晶薄膜のレーザーアニール方法とその装置
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
JP2002158173A (ja) 2000-09-05 2002-05-31 Sony Corp 薄膜の製造方法、半導体薄膜、半導体装置、半導体薄膜の製造方法、及び半導体薄膜製造装置
KR20020019419A (ko) 2000-09-05 2002-03-12 이데이 노부유끼 박막 제조 방법, 반도체 박막, 반도체 디바이스, 반도체박막 제조 방법, 및 반도체 박막 제조 장치

Also Published As

Publication number Publication date
US7732268B2 (en) 2010-06-08
JP2008053394A (ja) 2008-03-06
US20080050893A1 (en) 2008-02-28

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