JP2008047714A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000005121 nitriding Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 34
- 150000004767 nitrides Chemical class 0.000 description 24
- 230000001681 protective effect Effects 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000009279 wet oxidation reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】半導体装置10は、シリコン基板11上に形成されたトレンチ12の表面に接するゲート絶縁膜13と、ゲート絶縁膜13を介してトレンチ12に対向するゲート電極14とを有する。ゲート絶縁膜13は、トレンチ12の側壁表面に接する第1部分が、トレンチ12の底部表面に接する第2部分よりも大きな酸化膜換算膜厚を有する。
【選択図】図1
Description
2003 Symposium on VLSI Technology Digest of Technical Papers, p.11-12
前記ゲート絶縁膜は、前記トレンチの側壁表面に接する第1部分が、前記トレンチの底部表面に接する第2部分よりも大きな酸化膜換算膜厚を有することを特徴とする。
半導体基板上にトレンチを形成する工程と、
前記トレンチの表面に接するシリコン酸化膜を形成する工程と、
前記トレンチの底部表面に接するシリコン酸化膜の部分を選択的に窒化する工程と、
前記トレンチの内部に底部を有するゲート電極を形成する工程と、
前記トレンチに隣接する半導体基板の表面部分にソース/ドレイン拡散層を形成する工程とを有することを特徴とする。
11:シリコン基板
12:トレンチ
13:ゲート絶縁膜
13a:シリコン酸化膜
14:ゲート電極
15:電極保護膜
16:シリコン電極層
16a:ポリシリコン膜
17:金属電極層
17a:金属膜
18:ソース/ドレイン拡散層
19:チャネル
21:パッド酸化膜
22:マスク窒化膜
23:開口
24:側壁窒化膜
25:犠牲酸化膜
Claims (7)
- 半導体基板上に形成されたトレンチの表面に接するゲート絶縁膜と、該ゲート絶縁膜を介して前記トレンチに対向するゲート電極とを有する溝型MOSFETを備える半導体装置において、
前記ゲート絶縁膜は、前記トレンチの側壁表面に接する第1部分が、前記トレンチの底部表面に接する第2部分よりも大きな酸化膜換算膜厚を有することを特徴とする半導体装置。 - 前記第1部分がシリコン酸化膜で形成され、前記第2部分がシリコン酸窒化膜で形成される、請求項1に記載の半導体装置。
- 前記ゲート電極の前記トレンチの外部に形成されるゲート電極部分の幅が、前記トレンチの幅よりも小さい、請求項1に記載の半導体装置。
- 溝型MOSFETを有する半導体装置の製造方法において、
半導体基板上にトレンチを形成する工程と、
前記トレンチの表面に接するシリコン酸化膜を形成する工程と、
前記トレンチの底部表面に接するシリコン酸化膜の部分を選択的に窒化する工程と、
前記トレンチの内部に底部を有するゲート電極を形成する工程と、
前記トレンチに隣接する半導体基板の表面部分にソース/ドレイン拡散層を形成する工程とを有することを特徴とする半導体装置の製造方法。 - 前記窒化工程は、異方性を有するプラズマ窒化処理、又は、窒素イオン注入処理である、請求項4に記載の半導体装置の製造方法。
- 前記シリコン酸化膜を形成する工程が、シリコン基板表面を酸化するラジカル酸化工程である、請求項4に記載の半導体装置の製造方法。
- 前記ゲート電極を形成する工程が、前記トレンチ内部を含むシリコン基板の表面に一様にゲート電極層を堆積する工程と、前記トレンチ外部に堆積された前記ゲート電極層の部分をエッチングする工程とを有する、請求項4に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006222158A JP4543397B2 (ja) | 2006-08-17 | 2006-08-17 | 半導体装置の製造方法 |
US11/836,837 US20080042195A1 (en) | 2006-08-17 | 2007-08-10 | Semiconductor device including recessed-channel-array mosfet having a higher operational speed |
US12/604,006 US7902027B2 (en) | 2006-08-17 | 2009-10-22 | Method of manufacturing a semiconductor device including recessed-channel-array MOSFET having a higher operational speed |
Applications Claiming Priority (1)
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JP2006222158A JP4543397B2 (ja) | 2006-08-17 | 2006-08-17 | 半導体装置の製造方法 |
Publications (2)
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JP2008047714A true JP2008047714A (ja) | 2008-02-28 |
JP4543397B2 JP4543397B2 (ja) | 2010-09-15 |
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JP2006222158A Expired - Fee Related JP4543397B2 (ja) | 2006-08-17 | 2006-08-17 | 半導体装置の製造方法 |
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US (2) | US20080042195A1 (ja) |
JP (1) | JP4543397B2 (ja) |
Cited By (1)
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KR20180087425A (ko) * | 2015-12-22 | 2018-08-01 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | Dram 디바이스에 대한 비-균일 게이트 산화물 두께 |
Families Citing this family (8)
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---|---|---|---|---|
US7943992B2 (en) * | 2008-06-10 | 2011-05-17 | Intel Corporation | Metal gate structures with recessed channel |
KR101095802B1 (ko) * | 2010-01-07 | 2011-12-21 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조 방법 |
JP5159816B2 (ja) * | 2010-03-23 | 2013-03-13 | 株式会社東芝 | 半導体記憶装置 |
JP2012178520A (ja) * | 2011-02-28 | 2012-09-13 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8288231B1 (en) * | 2011-08-18 | 2012-10-16 | Nanya Technology Corp. | Method of fabricating a recessed channel access transistor device |
KR101851199B1 (ko) | 2011-12-28 | 2018-04-25 | 삼성전자주식회사 | 질화된 게이트 절연층을 포함하는 반도체 소자 및 그 제조 방법 |
US8716104B1 (en) * | 2012-12-20 | 2014-05-06 | United Microelectronics Corp. | Method of fabricating isolation structure |
US9040375B2 (en) * | 2013-01-28 | 2015-05-26 | Infineon Technologies Dresden Gmbh | Method for processing a carrier, method for fabricating a charge storage memory cell, method for processing a chip, and method for electrically contacting a spacer structure |
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JPH02307271A (ja) * | 1989-05-23 | 1990-12-20 | Mitsubishi Electric Corp | 半導体装置 |
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2006
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-
2007
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2009
- 2009-10-22 US US12/604,006 patent/US7902027B2/en not_active Expired - Fee Related
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US20080042195A1 (en) | 2008-02-21 |
JP4543397B2 (ja) | 2010-09-15 |
US20100041197A1 (en) | 2010-02-18 |
US7902027B2 (en) | 2011-03-08 |
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