JP2008034852A5 - - Google Patents
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- JP2008034852A5 JP2008034852A5 JP2007195436A JP2007195436A JP2008034852A5 JP 2008034852 A5 JP2008034852 A5 JP 2008034852A5 JP 2007195436 A JP2007195436 A JP 2007195436A JP 2007195436 A JP2007195436 A JP 2007195436A JP 2008034852 A5 JP2008034852 A5 JP 2008034852A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- function
- superlattice
- optoelectronic device
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002019 doping agent Substances 0.000 claims 11
- 230000005693 optoelectronics Effects 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 2
- 230000007704 transition Effects 0.000 claims 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000012886 linear function Methods 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006034821.4 | 2006-07-27 | ||
| DE102006034821 | 2006-07-27 | ||
| DE102006046227A DE102006046227A1 (de) | 2006-07-27 | 2006-09-29 | Halbleiter-Schichtstruktur mit Übergitter |
| DE102006046227.0 | 2006-09-29 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008034852A JP2008034852A (ja) | 2008-02-14 |
| JP2008034852A5 true JP2008034852A5 (OSRAM) | 2011-06-02 |
| JP5156290B2 JP5156290B2 (ja) | 2013-03-06 |
Family
ID=38596820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007195436A Expired - Fee Related JP5156290B2 (ja) | 2006-07-27 | 2007-07-27 | オプトエレクトロニクスデバイス |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7822089B2 (OSRAM) |
| EP (1) | EP1883140B1 (OSRAM) |
| JP (1) | JP5156290B2 (OSRAM) |
Families Citing this family (68)
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| EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
| EP1883140B1 (de) | 2006-07-27 | 2013-02-27 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten |
| PL1883119T3 (pl) | 2006-07-27 | 2016-04-29 | Osram Opto Semiconductors Gmbh | Półprzewodnikowa struktura warstwowa z supersiecią |
| KR101308130B1 (ko) * | 2008-03-25 | 2013-09-12 | 서울옵토디바이스주식회사 | 발광 소자 및 그 제조 방법 |
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| US20090301388A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | Capsule for high pressure processing and method of use for supercritical fluids |
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| WO2011044554A1 (en) | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
| US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
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| US20100295088A1 (en) * | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
| US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
| US8461071B2 (en) * | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
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| US20100147210A1 (en) * | 2008-12-12 | 2010-06-17 | Soraa, Inc. | high pressure apparatus and method for nitride crystal growth |
| US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
| USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
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| US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
| US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
| US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
| US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
| CN102549203B (zh) * | 2009-09-28 | 2014-09-03 | 株式会社德山 | 叠层体的制造方法 |
| US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
| US8604461B2 (en) | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
| KR20110133241A (ko) | 2010-06-04 | 2011-12-12 | 서울옵토디바이스주식회사 | 발광 다이오드 제조 방법 |
| US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
| US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
| US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
| US8492185B1 (en) | 2011-07-14 | 2013-07-23 | Soraa, Inc. | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices |
| US9694158B2 (en) | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
| US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
| US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
| US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
| KR101952437B1 (ko) | 2012-07-13 | 2019-04-25 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
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| US9650723B1 (en) | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
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| KR102320790B1 (ko) * | 2014-07-25 | 2021-11-03 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 및 그 제조 방법 |
| FR3028670B1 (fr) * | 2014-11-18 | 2017-12-22 | Commissariat Energie Atomique | Structure semi-conductrice a couche de semi-conducteur du groupe iii-v ou ii-vi comprenant une structure cristalline a mailles cubiques ou hexagonales |
| US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
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| FR3066045A1 (fr) * | 2017-05-02 | 2018-11-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente comprenant des couches de conversion en longueur d'onde |
| US10516076B2 (en) | 2018-02-01 | 2019-12-24 | Silanna UV Technologies Pte Ltd | Dislocation filter for semiconductor devices |
| US10879420B2 (en) | 2018-07-09 | 2020-12-29 | University Of Iowa Research Foundation | Cascaded superlattice LED system |
| US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
| US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
| US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
| US12152742B2 (en) | 2019-01-18 | 2024-11-26 | Kyocera Sld Laser, Inc. | Laser-based light guide-coupled wide-spectrum light system |
| US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
| US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
| US11705322B2 (en) | 2020-02-11 | 2023-07-18 | Slt Technologies, Inc. | Group III nitride substrate, method of making, and method of use |
| US12091771B2 (en) | 2020-02-11 | 2024-09-17 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
| US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
| KR102540198B1 (ko) * | 2020-05-22 | 2023-06-02 | 충칭 콘카 포토일렉트릭 테크놀로지 리서치 인스티튜트 컴퍼니 리미티드 | 초격자층, led 에피택셜 구조, 디스플레이 장치 및 이의 제조 방법 |
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2007
- 2007-07-13 EP EP07013821A patent/EP1883140B1/de not_active Ceased
- 2007-07-20 US US11/780,512 patent/US7822089B2/en active Active
- 2007-07-27 JP JP2007195436A patent/JP5156290B2/ja not_active Expired - Fee Related
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