JP2008028400A - 半導体チップ - Google Patents
半導体チップ Download PDFInfo
- Publication number
- JP2008028400A JP2008028400A JP2007190889A JP2007190889A JP2008028400A JP 2008028400 A JP2008028400 A JP 2008028400A JP 2007190889 A JP2007190889 A JP 2007190889A JP 2007190889 A JP2007190889 A JP 2007190889A JP 2008028400 A JP2008028400 A JP 2008028400A
- Authority
- JP
- Japan
- Prior art keywords
- pad
- metal wiring
- interlayer insulating
- insulating film
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/05001—Internal layers
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- H01L2224/05075—Plural internal layers
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- H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
- H01L2224/05089—Disposition of the additional element
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- H01L2224/05095—Disposition of the additional element of a plurality of vias at the periphery of the internal layers
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- H01L2224/05556—Shape in side view
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060068719A KR100741910B1 (ko) | 2006-07-21 | 2006-07-21 | 구조적 강도가 향상된 칩 패드 구조를 가지는 반도체 칩 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008028400A true JP2008028400A (ja) | 2008-02-07 |
Family
ID=38499351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007190889A Pending JP2008028400A (ja) | 2006-07-21 | 2007-07-23 | 半導体チップ |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080017991A1 (ko) |
JP (1) | JP2008028400A (ko) |
KR (1) | KR100741910B1 (ko) |
CN (1) | CN100536120C (ko) |
DE (1) | DE102007033234A1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100902584B1 (ko) * | 2007-12-03 | 2009-06-11 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
KR101589690B1 (ko) | 2008-12-18 | 2016-01-29 | 삼성전자주식회사 | 반도체 소자의 본딩 패드 및 그의 제조방법 |
JP2021072341A (ja) | 2019-10-30 | 2021-05-06 | キオクシア株式会社 | 半導体装置 |
CN114127914B (zh) | 2021-05-11 | 2023-05-26 | 英诺赛科(苏州)半导体有限公司 | 集成半导体器件及其制造方法 |
CN116995061A (zh) * | 2022-04-25 | 2023-11-03 | 长鑫存储技术有限公司 | 半导体结构及半导体结构的制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11186320A (ja) * | 1997-12-09 | 1999-07-09 | Samsung Electron Co Ltd | 多層パッドを具備した半導体素子及びその製造方法 |
JP2002222811A (ja) * | 2001-01-24 | 2002-08-09 | Seiko Epson Corp | 半導体装置およびその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62237737A (ja) | 1986-04-08 | 1987-10-17 | Nec Corp | 半導体集積回路装置 |
US6893906B2 (en) * | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
KR19990052264A (ko) * | 1997-12-22 | 1999-07-05 | 윤종용 | 다층 패드를 구비한 반도체 소자 및 그 제조방법 |
KR20000009043A (ko) * | 1998-07-21 | 2000-02-15 | 윤종용 | 다층 패드를 구비한 반도체 소자 및 그 제조방법 |
US6909196B2 (en) * | 2002-06-21 | 2005-06-21 | Micron Technology, Inc. | Method and structures for reduced parasitic capacitance in integrated circuit metallizations |
JP3961399B2 (ja) * | 2002-10-30 | 2007-08-22 | 富士通株式会社 | 半導体装置の製造方法 |
US7057296B2 (en) * | 2003-10-29 | 2006-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding pad structure |
-
2006
- 2006-07-21 KR KR1020060068719A patent/KR100741910B1/ko not_active IP Right Cessation
-
2007
- 2007-07-16 US US11/778,431 patent/US20080017991A1/en not_active Abandoned
- 2007-07-17 DE DE102007033234A patent/DE102007033234A1/de not_active Withdrawn
- 2007-07-20 CN CNB2007101373095A patent/CN100536120C/zh not_active Expired - Fee Related
- 2007-07-23 JP JP2007190889A patent/JP2008028400A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11186320A (ja) * | 1997-12-09 | 1999-07-09 | Samsung Electron Co Ltd | 多層パッドを具備した半導体素子及びその製造方法 |
JP2002222811A (ja) * | 2001-01-24 | 2002-08-09 | Seiko Epson Corp | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080017991A1 (en) | 2008-01-24 |
DE102007033234A1 (de) | 2008-01-31 |
KR100741910B1 (ko) | 2007-07-24 |
CN100536120C (zh) | 2009-09-02 |
CN101110402A (zh) | 2008-01-23 |
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