JP2007538413A5 - - Google Patents
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- Publication number
- JP2007538413A5 JP2007538413A5 JP2007527467A JP2007527467A JP2007538413A5 JP 2007538413 A5 JP2007538413 A5 JP 2007538413A5 JP 2007527467 A JP2007527467 A JP 2007527467A JP 2007527467 A JP2007527467 A JP 2007527467A JP 2007538413 A5 JP2007538413 A5 JP 2007538413A5
- Authority
- JP
- Japan
- Prior art keywords
- process chamber
- depositing
- coating film
- precursor
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims 52
- 239000011248 coating agent Substances 0.000 claims 29
- 238000000576 coating method Methods 0.000 claims 29
- 238000000151 deposition Methods 0.000 claims 24
- 239000002243 precursor Substances 0.000 claims 16
- 239000002019 doping agent Substances 0.000 claims 11
- 239000007789 gas Substances 0.000 claims 10
- 238000005468 ion implantation Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 108010000020 Platelet Factor 3 Proteins 0.000 claims 1
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- 229910008310 Si—Ge Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- QXTIBZLKQPJVII-UHFFFAOYSA-N triethylsilicon Chemical compound CC[Si](CC)CC QXTIBZLKQPJVII-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/850,222 US20050260354A1 (en) | 2004-05-20 | 2004-05-20 | In-situ process chamber preparation methods for plasma ion implantation systems |
| PCT/US2005/017699 WO2005114692A2 (en) | 2004-05-20 | 2005-05-19 | In-situ process chamber preparation methods for plasma ion implantation systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007538413A JP2007538413A (ja) | 2007-12-27 |
| JP2007538413A5 true JP2007538413A5 (enExample) | 2008-07-03 |
Family
ID=34970469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007527467A Withdrawn JP2007538413A (ja) | 2004-05-20 | 2005-05-19 | プラズマイオン注入システムのためのインサイチュプロセスチャンバの調整方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20050260354A1 (enExample) |
| JP (1) | JP2007538413A (enExample) |
| KR (1) | KR20070026608A (enExample) |
| CN (1) | CN1977351A (enExample) |
| TW (1) | TW200602510A (enExample) |
| WO (1) | WO2005114692A2 (enExample) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| US20060205192A1 (en) * | 2005-03-09 | 2006-09-14 | Varian Semiconductor Equipment Associates, Inc. | Shallow-junction fabrication in semiconductor devices via plasma implantation and deposition |
| EP1866074A4 (en) * | 2005-03-16 | 2017-01-04 | Entegris Inc. | System for delivery of reagents from solid sources thereof |
| US7528386B2 (en) * | 2005-04-21 | 2009-05-05 | Board Of Trustees Of University Of Illinois | Submicron particle removal |
| WO2007002288A2 (en) | 2005-06-22 | 2007-01-04 | Advanced Technology Materials, Inc. | Apparatus and process for integrated gas blending |
| CN103170447B (zh) | 2005-08-30 | 2015-02-18 | 先进科技材料公司 | 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成 |
| US7595271B2 (en) * | 2005-12-01 | 2009-09-29 | Asm America, Inc. | Polymer coating for vapor deposition tool |
| EP2021528A4 (en) * | 2006-04-26 | 2011-03-23 | Advanced Tech Materials | CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS |
| JP5241499B2 (ja) * | 2006-09-19 | 2013-07-17 | 東京エレクトロン株式会社 | プラズマクリーニング方法、プラズマcvd方法、およびプラズマ処理装置 |
| US20080090392A1 (en) * | 2006-09-29 | 2008-04-17 | Varian Semiconductor Equipment Associates, Inc. | Technique for Improved Damage Control in a Plasma Doping (PLAD) Ion Implantation |
| US7619229B2 (en) * | 2006-10-16 | 2009-11-17 | Varian Semiconductor Equipment Associates, Inc. | Technique for matching performance of ion implantation devices using an in-situ mask |
| DE102007037527B4 (de) * | 2006-11-10 | 2013-05-08 | Schott Ag | Verfahren zum Beschichten von Gegenständen mit Wechselschichten |
| JP5252613B2 (ja) * | 2006-12-25 | 2013-07-31 | 国立大学法人東北大学 | イオン注入装置およびイオン注入方法 |
| US7691755B2 (en) * | 2007-05-15 | 2010-04-06 | Applied Materials, Inc. | Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor |
| US9123509B2 (en) * | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| KR100855540B1 (ko) * | 2007-07-10 | 2008-09-01 | 주식회사 코미코 | 이온 주입 장치, 이온 주입 장치의 내부 구조물 및 상기이온 주입 장치의 코팅층 형성 방법 |
| US7875125B2 (en) | 2007-09-21 | 2011-01-25 | Semequip, Inc. | Method for extending equipment uptime in ion implantation |
| US7968439B2 (en) * | 2008-02-06 | 2011-06-28 | Applied Materials, Inc. | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
| KR101822779B1 (ko) * | 2008-02-11 | 2018-01-26 | 엔테그리스, 아이엔씨. | 반도체 가공 시스템에서의 이온 공급원 세정법 |
| US7659184B2 (en) * | 2008-02-25 | 2010-02-09 | Applied Materials, Inc. | Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking |
| US20090297409A1 (en) * | 2008-05-30 | 2009-12-03 | Buchanan Walter R | Discharge plasma reactor |
| JP5178342B2 (ja) * | 2008-06-23 | 2013-04-10 | キヤノン株式会社 | 堆積物除去方法及び堆積膜形成方法 |
| JP2010050188A (ja) * | 2008-08-20 | 2010-03-04 | Panasonic Corp | プラズマドーピング装置 |
| JP5710591B2 (ja) * | 2009-04-20 | 2015-04-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進 |
| US10707055B2 (en) | 2017-11-17 | 2020-07-07 | Advanced Energy Industries, Inc. | Spatial and temporal control of ion bias voltage for plasma processing |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US20110021011A1 (en) | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
| US20110039034A1 (en) * | 2009-08-11 | 2011-02-17 | Helen Maynard | Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material |
| US9627180B2 (en) * | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
| US8598025B2 (en) | 2010-11-15 | 2013-12-03 | Varian Semiconductor Equipment Associates, Inc. | Doping of planar or three-dimensional structures at elevated temperatures |
| WO2013123140A1 (en) * | 2012-02-14 | 2013-08-22 | Advanced Technology Materials, Inc. | Alternate materials and mixtures to minimize phosphorus buildup in implant applications |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| CN103774121B (zh) * | 2012-10-19 | 2016-09-21 | 陕西拓日新能源科技有限公司 | 一种用于非晶硅沉积的控制系统 |
| JP2014137901A (ja) * | 2013-01-16 | 2014-07-28 | Nissin Ion Equipment Co Ltd | イオン注入装置およびイオン注入装置の運転方法 |
| US9209032B2 (en) * | 2013-03-15 | 2015-12-08 | Tokyo Electron Limited | Electric pressure systems for control of plasma properties and uniformity |
| US9123506B2 (en) | 2013-06-10 | 2015-09-01 | Fei Company | Electron beam-induced etching |
| US9524849B2 (en) | 2013-07-18 | 2016-12-20 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
| SG10201801299YA (en) * | 2013-08-16 | 2018-03-28 | Entegris Inc | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| KR102272833B1 (ko) * | 2013-11-26 | 2021-07-06 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 작업물을 프로세싱하는 방법 |
| JP5750496B2 (ja) * | 2013-12-11 | 2015-07-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US11015244B2 (en) * | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
| US11970772B2 (en) | 2014-08-22 | 2024-04-30 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
| US10094018B2 (en) * | 2014-10-16 | 2018-10-09 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
| KR102214208B1 (ko) * | 2014-09-01 | 2021-02-08 | 엔테그리스, 아이엔씨. | 향상된 소스 기술을 이용한 인 또는 비소 이온 주입 |
| CN104465292B (zh) * | 2014-11-28 | 2017-05-03 | 上海华力微电子有限公司 | 一种离子注入机的预处理方法 |
| US10553411B2 (en) * | 2015-09-10 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion collector for use in plasma systems |
| US11452982B2 (en) | 2015-10-01 | 2022-09-27 | Milton Roy, Llc | Reactor for liquid and gas and method of use |
| US10882021B2 (en) | 2015-10-01 | 2021-01-05 | Ion Inject Technology Llc | Plasma reactor for liquid and gas and method of use |
| US12296313B2 (en) | 2015-10-01 | 2025-05-13 | Milton Roy, Llc | System and method for formulating medical treatment effluents |
| EP3356026B1 (en) | 2015-10-01 | 2022-11-09 | Milton Roy, LLC | Plasma reactor for liquid and gas |
| US10187968B2 (en) | 2015-10-08 | 2019-01-22 | Ion Inject Technology Llc | Quasi-resonant plasma voltage generator |
| JP6169666B2 (ja) * | 2015-10-20 | 2017-07-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP6584927B2 (ja) * | 2015-11-13 | 2019-10-02 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置、およびイオン注入装置の制御方法 |
| US10046300B2 (en) | 2015-12-09 | 2018-08-14 | Ion Inject Technology Llc | Membrane plasma reactor |
| FR3045206B1 (fr) * | 2015-12-10 | 2020-01-03 | Ion Beam Services | Procede de commande pour un implanteur fonctionnant en immersion plasma |
| US10460941B2 (en) | 2016-11-08 | 2019-10-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping using a solid dopant source |
| US20180247800A1 (en) * | 2017-02-28 | 2018-08-30 | International Business Machines Corporation | Gallium implantation cleaning method |
| US10161034B2 (en) | 2017-04-21 | 2018-12-25 | Lam Research Corporation | Rapid chamber clean using concurrent in-situ and remote plasma sources |
| TWI635539B (zh) * | 2017-09-15 | 2018-09-11 | 金巨達國際股份有限公司 | 高介電常數介電層、其製造方法及執行該方法之多功能設備 |
| TWI767088B (zh) | 2017-11-17 | 2022-06-11 | 新加坡商Aes全球公司 | 電漿處理系統,用於調變其中的電源的控制方法及相關的電漿處理控制系統 |
| PL3711080T3 (pl) | 2017-11-17 | 2023-12-11 | Aes Global Holdings, Pte. Ltd. | Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| US10410845B2 (en) * | 2017-11-22 | 2019-09-10 | Applied Materials, Inc. | Using bias RF pulsing to effectively clean electrostatic chuck (ESC) |
| US10704141B2 (en) * | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| CN110828272B (zh) * | 2018-08-09 | 2022-09-16 | 北京北方华创微电子装备有限公司 | 腔室内衬、下电极装置和半导体处理设备 |
| SG11202103979UA (en) * | 2018-10-19 | 2021-05-28 | Lam Res Corp | In situ protective coating of chamber components for semiconductor processing |
| JP7241627B2 (ja) * | 2019-07-05 | 2023-03-17 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理装置 |
| CN114222958B (zh) | 2019-07-12 | 2024-03-19 | 先进工程解决方案全球控股私人有限公司 | 具有单个受控开关的偏置电源 |
| CN112289669B (zh) * | 2019-07-25 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种在无晶圆的真空反应腔内镀膜的方法及晶圆处理方法 |
| JP7236954B2 (ja) * | 2019-08-06 | 2023-03-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US12165852B2 (en) * | 2022-03-05 | 2024-12-10 | Applied Materials, Inc. | Cover ring to mitigate carbon contamination in plasma doping chamber |
| CN117116733A (zh) * | 2022-05-16 | 2023-11-24 | 中微半导体设备(上海)股份有限公司 | 一种部件表面处理方法、等离子处理装置及其制备方法 |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US20240266149A1 (en) * | 2023-02-03 | 2024-08-08 | Tokyo Electron Limited | Methods for Semiconductor Process Chamber |
| WO2025250609A1 (en) * | 2024-05-30 | 2025-12-04 | Lam Research Corporation | Coating surfaces within a pumping path of a processing tool |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4376688A (en) * | 1981-04-03 | 1983-03-15 | Xerox Corporation | Method for producing semiconductor films |
| US4512812A (en) * | 1983-09-22 | 1985-04-23 | Varian Associates, Inc. | Method for reducing phosphorous contamination in a vacuum processing chamber |
| GB8512455D0 (en) * | 1985-05-16 | 1985-06-19 | Atomic Energy Authority Uk | Coating apparatus |
| GB2178061B (en) * | 1985-07-01 | 1989-04-26 | Atomic Energy Authority Uk | Coating improvements |
| US4764394A (en) * | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
| JPH01306565A (ja) * | 1988-06-02 | 1989-12-11 | Canon Inc | 堆積膜形成方法 |
| JP2708533B2 (ja) * | 1989-03-14 | 1998-02-04 | 富士通株式会社 | Cvd装置の残留ガス除去方法 |
| GB9101462D0 (en) * | 1991-01-23 | 1991-03-06 | Unilever Plc | Edible spread |
| US5366764A (en) * | 1992-06-15 | 1994-11-22 | Sunthankar Mandar B | Environmentally safe methods and apparatus for depositing and/or reclaiming a metal or semi-conductor material using sublimation |
| US5572038A (en) * | 1993-05-07 | 1996-11-05 | Varian Associates, Inc. | Charge monitor for high potential pulse current dose measurement apparatus and method |
| US5354381A (en) * | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
| US5711812A (en) * | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
| US5672541A (en) * | 1995-06-14 | 1997-09-30 | Wisconsin Alumni Research Foundation | Ultra-shallow junction semiconductor device fabrication |
| US5654043A (en) * | 1996-10-10 | 1997-08-05 | Eaton Corporation | Pulsed plate plasma implantation system and method |
| US5911832A (en) * | 1996-10-10 | 1999-06-15 | Eaton Corporation | Plasma immersion implantation with pulsed anode |
| JP3341619B2 (ja) * | 1997-03-04 | 2002-11-05 | 東京エレクトロン株式会社 | 成膜装置 |
| US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
| TW460943B (en) * | 1997-06-11 | 2001-10-21 | Applied Materials Inc | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
| US6274058B1 (en) * | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
| US6136211A (en) * | 1997-11-12 | 2000-10-24 | Applied Materials, Inc. | Self-cleaning etch process |
| US5976900A (en) * | 1997-12-08 | 1999-11-02 | Cypress Semiconductor Corp. | Method of reducing impurity contamination in semiconductor process chambers |
| US6071573A (en) * | 1997-12-30 | 2000-06-06 | Lam Research Corporation | Process for precoating plasma CVD reactors |
| US6217724B1 (en) * | 1998-02-11 | 2001-04-17 | Silicon General Corporation | Coated platen design for plasma immersion ion implantation |
| US6300643B1 (en) * | 1998-08-03 | 2001-10-09 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
| US6020592A (en) * | 1998-08-03 | 2000-02-01 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
| US6050218A (en) * | 1998-09-28 | 2000-04-18 | Eaton Corporation | Dosimetry cup charge collection in plasma immersion ion implantation |
| US6335536B1 (en) * | 1999-10-27 | 2002-01-01 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for low voltage plasma doping using dual pulses |
| US6182604B1 (en) * | 1999-10-27 | 2001-02-06 | Varian Semiconductor Equipment Associates, Inc. | Hollow cathode for plasma doping system |
| US6426015B1 (en) * | 1999-12-14 | 2002-07-30 | Applied Materials, Inc. | Method of reducing undesired etching of insulation due to elevated boron concentrations |
| US6350697B1 (en) * | 1999-12-22 | 2002-02-26 | Lam Research Corporation | Method of cleaning and conditioning plasma reaction chamber |
| US7465478B2 (en) * | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US6479098B1 (en) * | 2000-12-26 | 2002-11-12 | Taiwan Semiconductor Manufacturing Company | Method to solve particle performance of FSG layer by using UFU season film for FSG process |
| US6533910B2 (en) * | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
| US6589868B2 (en) * | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
| US7588036B2 (en) * | 2002-07-01 | 2009-09-15 | Applied Materials, Inc. | Chamber clean method using remote and in situ plasma cleaning systems |
| JP4013674B2 (ja) * | 2002-07-11 | 2007-11-28 | 松下電器産業株式会社 | プラズマドーピング方法及び装置 |
-
2004
- 2004-05-20 US US10/850,222 patent/US20050260354A1/en not_active Abandoned
-
2005
- 2005-05-19 JP JP2007527467A patent/JP2007538413A/ja not_active Withdrawn
- 2005-05-19 WO PCT/US2005/017699 patent/WO2005114692A2/en not_active Ceased
- 2005-05-19 TW TW094116323A patent/TW200602510A/zh unknown
- 2005-05-19 CN CNA2005800203293A patent/CN1977351A/zh active Pending
- 2005-05-19 KR KR1020067026723A patent/KR20070026608A/ko not_active Withdrawn
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