TW200602510A - In-situ process chamber preparation methods for plasma ion implantation systems - Google Patents

In-situ process chamber preparation methods for plasma ion implantation systems

Info

Publication number
TW200602510A
TW200602510A TW094116323A TW94116323A TW200602510A TW 200602510 A TW200602510 A TW 200602510A TW 094116323 A TW094116323 A TW 094116323A TW 94116323 A TW94116323 A TW 94116323A TW 200602510 A TW200602510 A TW 200602510A
Authority
TW
Taiwan
Prior art keywords
ion implantation
process chamber
plasma ion
substrate
plasma
Prior art date
Application number
TW094116323A
Other languages
English (en)
Chinese (zh)
Inventor
Vikram Singh
Atul Gupta
Harold M Persing
Steven R Walther
Anne L Testoni
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200602510A publication Critical patent/TW200602510A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW094116323A 2004-05-20 2005-05-19 In-situ process chamber preparation methods for plasma ion implantation systems TW200602510A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/850,222 US20050260354A1 (en) 2004-05-20 2004-05-20 In-situ process chamber preparation methods for plasma ion implantation systems

Publications (1)

Publication Number Publication Date
TW200602510A true TW200602510A (en) 2006-01-16

Family

ID=34970469

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116323A TW200602510A (en) 2004-05-20 2005-05-19 In-situ process chamber preparation methods for plasma ion implantation systems

Country Status (6)

Country Link
US (1) US20050260354A1 (enExample)
JP (1) JP2007538413A (enExample)
KR (1) KR20070026608A (enExample)
CN (1) CN1977351A (enExample)
TW (1) TW200602510A (enExample)
WO (1) WO2005114692A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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TWI401335B (zh) * 2006-11-10 2013-07-11 Schott Ag 塗覆系統、塗覆方法以及經塗覆之物件
TWI749077B (zh) * 2016-11-08 2021-12-11 美商瓦里安半導體設備公司 一種在工件上沈積摻雜物質的方法、一種在工件中植入摻雜物質的方法及一種處理工件的方法
TWI888823B (zh) * 2022-05-16 2025-07-01 大陸商中微半導體設備（上海）股份有限公司 部件表面處理方法、電漿處理裝置及其製備方法

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TWI401335B (zh) * 2006-11-10 2013-07-11 Schott Ag 塗覆系統、塗覆方法以及經塗覆之物件
TWI749077B (zh) * 2016-11-08 2021-12-11 美商瓦里安半導體設備公司 一種在工件上沈積摻雜物質的方法、一種在工件中植入摻雜物質的方法及一種處理工件的方法
TWI888823B (zh) * 2022-05-16 2025-07-01 大陸商中微半導體設備（上海）股份有限公司 部件表面處理方法、電漿處理裝置及其製備方法

Also Published As

Publication number Publication date
KR20070026608A (ko) 2007-03-08
WO2005114692A3 (en) 2006-03-02
US20050260354A1 (en) 2005-11-24
WO2005114692A9 (en) 2006-01-19
CN1977351A (zh) 2007-06-06
WO2005114692A2 (en) 2005-12-01
JP2007538413A (ja) 2007-12-27

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