CN1977351A - 等离子体离子注入系统的原位处理室制备方法 - Google Patents

等离子体离子注入系统的原位处理室制备方法 Download PDF

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Publication number
CN1977351A
CN1977351A CNA2005800203293A CN200580020329A CN1977351A CN 1977351 A CN1977351 A CN 1977351A CN A2005800203293 A CNA2005800203293 A CN A2005800203293A CN 200580020329 A CN200580020329 A CN 200580020329A CN 1977351 A CN1977351 A CN 1977351A
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China
Prior art keywords
process chamber
plasma
coating
substrate
plasma ion
Prior art date
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Pending
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CNA2005800203293A
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English (en)
Chinese (zh)
Inventor
维克拉姆·辛格
阿图尔·古普塔
哈罗尔德·M·佩尔欣
史蒂文·R·沃尔瑟
安妮·L·泰斯托尼
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN1977351A publication Critical patent/CN1977351A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
CNA2005800203293A 2004-05-20 2005-05-19 等离子体离子注入系统的原位处理室制备方法 Pending CN1977351A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/850,222 US20050260354A1 (en) 2004-05-20 2004-05-20 In-situ process chamber preparation methods for plasma ion implantation systems
US10/850,222 2004-05-20

Publications (1)

Publication Number Publication Date
CN1977351A true CN1977351A (zh) 2007-06-06

Family

ID=34970469

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800203293A Pending CN1977351A (zh) 2004-05-20 2005-05-19 等离子体离子注入系统的原位处理室制备方法

Country Status (6)

Country Link
US (1) US20050260354A1 (enExample)
JP (1) JP2007538413A (enExample)
KR (1) KR20070026608A (enExample)
CN (1) CN1977351A (enExample)
TW (1) TW200602510A (enExample)
WO (1) WO2005114692A2 (enExample)

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CN102576655A (zh) * 2009-08-11 2012-07-11 瓦里安半导体设备公司 脉冲沉积与再结晶以及利用结晶化/非晶物质的堆叠式太阳能电池设计
CN103774121A (zh) * 2012-10-19 2014-05-07 陕西拓日新能源科技有限公司 一种用于非晶硅沉积的控制系统
CN103928280A (zh) * 2013-01-16 2014-07-16 日新离子机器株式会社 离子注入装置和离子注入装置的运转方法
CN104241067A (zh) * 2013-06-10 2014-12-24 Fei公司 电子束感应蚀刻
CN104465292A (zh) * 2014-11-28 2015-03-25 上海华力微电子有限公司 一种离子注入机的预处理方法
CN105900213A (zh) * 2013-12-30 2016-08-24 Gtat公司 用于cad反应器的改善的辐射屏障
TWI562226B (en) * 2010-06-11 2016-12-11 Varian Semiconductor Equipment Techniques for plasma processing a substrate
CN107039227A (zh) * 2015-11-13 2017-08-11 住友重机械离子技术有限公司 离子生成装置及离子生成装置的控制方法
CN110085499A (zh) * 2014-09-01 2019-08-02 恩特格里斯公司 利用增强源技术进行磷或砷离子植入
CN110828272A (zh) * 2018-08-09 2020-02-21 北京北方华创微电子装备有限公司 腔室内衬、下电极装置和半导体处理设备
CN112086381A (zh) * 2015-10-02 2020-12-15 朗姆研究公司 用于原子层沉积的动态前体投配
CN112154534A (zh) * 2018-06-01 2020-12-29 应用材料公司 控制金属污染的腔室的原位cvd和ald涂布
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TWI562226B (en) * 2010-06-11 2016-12-11 Varian Semiconductor Equipment Techniques for plasma processing a substrate
CN103774121A (zh) * 2012-10-19 2014-05-07 陕西拓日新能源科技有限公司 一种用于非晶硅沉积的控制系统
CN103928280A (zh) * 2013-01-16 2014-07-16 日新离子机器株式会社 离子注入装置和离子注入装置的运转方法
CN103928280B (zh) * 2013-01-16 2016-04-20 日新离子机器株式会社 离子注入装置和离子注入装置的运转方法
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CN105900213A (zh) * 2013-12-30 2016-08-24 Gtat公司 用于cad反应器的改善的辐射屏障
CN105900213B (zh) * 2013-12-30 2020-08-21 Gtat公司 用于cad反应器的改善的辐射屏障
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