JP2007535697A5 - - Google Patents

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Publication number
JP2007535697A5
JP2007535697A5 JP2007509510A JP2007509510A JP2007535697A5 JP 2007535697 A5 JP2007535697 A5 JP 2007535697A5 JP 2007509510 A JP2007509510 A JP 2007509510A JP 2007509510 A JP2007509510 A JP 2007509510A JP 2007535697 A5 JP2007535697 A5 JP 2007535697A5
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JP
Japan
Prior art keywords
scf
composition
ion
substrate
implanted photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007509510A
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English (en)
Japanese (ja)
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JP2007535697A (ja
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Publication date
Priority claimed from US10/827,395 external-priority patent/US7557073B2/en
Application filed filed Critical
Publication of JP2007535697A publication Critical patent/JP2007535697A/ja
Publication of JP2007535697A5 publication Critical patent/JP2007535697A5/ja
Pending legal-status Critical Current

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JP2007509510A 2004-04-19 2005-04-12 イオン注入されたフォトレジストを除去するための非フッ化物含有超臨界流体組成物 Pending JP2007535697A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/827,395 US7557073B2 (en) 2001-12-31 2004-04-19 Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
PCT/US2005/012301 WO2005104682A2 (en) 2004-04-19 2005-04-12 Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist

Publications (2)

Publication Number Publication Date
JP2007535697A JP2007535697A (ja) 2007-12-06
JP2007535697A5 true JP2007535697A5 (enExample) 2008-05-29

Family

ID=35242115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007509510A Pending JP2007535697A (ja) 2004-04-19 2005-04-12 イオン注入されたフォトレジストを除去するための非フッ化物含有超臨界流体組成物

Country Status (7)

Country Link
US (1) US7557073B2 (enExample)
EP (1) EP1749087A2 (enExample)
JP (1) JP2007535697A (enExample)
KR (1) KR20060135037A (enExample)
CN (1) CN101098954A (enExample)
TW (1) TW200609347A (enExample)
WO (1) WO2005104682A2 (enExample)

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US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
CN101920929A (zh) * 2010-06-30 2010-12-22 上海集成电路研发中心有限公司 半导体悬臂结构的制造方法
CN103068496B (zh) 2010-08-06 2016-04-13 英派尔科技开发有限公司 超临界惰性气体和清洗方法
JP5763766B2 (ja) 2010-08-06 2015-08-12 エンパイア テクノロジー ディベロップメント エルエルシー 超臨界希ガスおよび着色方法
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
CN103732716B (zh) 2011-09-01 2017-06-06 英派尔科技开发有限公司 使用超临界氩组合物从基岩回收物质的系统、材料和方法
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (zh) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 移除離子植入抗蝕劑之非氧化強酸類之用途
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US20160230080A1 (en) * 2015-02-05 2016-08-11 Esam Z. Hamad Viscous carbon dioxide composition and method of making and using a viscous carbon dioxide composition

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