TW200609347A - Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist - Google Patents

Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist

Info

Publication number
TW200609347A
TW200609347A TW094112011A TW94112011A TW200609347A TW 200609347 A TW200609347 A TW 200609347A TW 094112011 A TW094112011 A TW 094112011A TW 94112011 A TW94112011 A TW 94112011A TW 200609347 A TW200609347 A TW 200609347A
Authority
TW
Taiwan
Prior art keywords
removal
photoresist
ion
supercritical fluid
scco2
Prior art date
Application number
TW094112011A
Other languages
English (en)
Chinese (zh)
Inventor
Michael B Korzenski
Thomas H Baum
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200609347A publication Critical patent/TW200609347A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0042—Reducing agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW094112011A 2004-04-19 2005-04-15 Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist TW200609347A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/827,395 US7557073B2 (en) 2001-12-31 2004-04-19 Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist

Publications (1)

Publication Number Publication Date
TW200609347A true TW200609347A (en) 2006-03-16

Family

ID=35242115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112011A TW200609347A (en) 2004-04-19 2005-04-15 Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist

Country Status (7)

Country Link
US (1) US7557073B2 (enExample)
EP (1) EP1749087A2 (enExample)
JP (1) JP2007535697A (enExample)
KR (1) KR20060135037A (enExample)
CN (1) CN101098954A (enExample)
TW (1) TW200609347A (enExample)
WO (1) WO2005104682A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060019850A1 (en) * 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
US8114220B2 (en) * 2005-04-15 2012-02-14 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
US20090301996A1 (en) * 2005-11-08 2009-12-10 Advanced Technology Materials, Inc. Formulations for removing cooper-containing post-etch residue from microelectronic devices
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
CN101920929A (zh) * 2010-06-30 2010-12-22 上海集成电路研发中心有限公司 半导体悬臂结构的制造方法
CN103068496B (zh) 2010-08-06 2016-04-13 英派尔科技开发有限公司 超临界惰性气体和清洗方法
JP5763766B2 (ja) 2010-08-06 2015-08-12 エンパイア テクノロジー ディベロップメント エルエルシー 超臨界希ガスおよび着色方法
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
CN103732716B (zh) 2011-09-01 2017-06-06 英派尔科技开发有限公司 使用超临界氩组合物从基岩回收物质的系统、材料和方法
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (ja) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物及び方法
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (zh) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 移除離子植入抗蝕劑之非氧化強酸類之用途
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US20160230080A1 (en) * 2015-02-05 2016-08-11 Esam Z. Hamad Viscous carbon dioxide composition and method of making and using a viscous carbon dioxide composition

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US303450A (en) * 1884-08-12 Roller-skate
US67773A (en) * 1867-08-13 Improvement in cotton-sins
GB1482690A (en) * 1974-12-19 1977-08-10 Coal Ind Hydrogenation of coal
DE3744329A1 (de) * 1987-12-28 1989-07-06 Schwarz Pharma Gmbh Verfahren zur herstellung einer mindestens einen wirkstoff und einen traeger umfassenden zubereitung
US5306350A (en) * 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
US5565616A (en) * 1994-05-09 1996-10-15 Board Of Regents, The University Of Texas System Controlled hydrothermal processing
WO1996027704A1 (en) 1995-03-06 1996-09-12 Unilever N.V. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5783082A (en) 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US5868862A (en) 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
JP3594759B2 (ja) 1997-03-19 2004-12-02 株式会社日立製作所 プラズマ処理方法
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6270531B1 (en) 1997-08-29 2001-08-07 Micell Technologies, Inc. End functionalized polysiloxane surfactants in carbon dioxide formulations
DE19810564A1 (de) * 1998-03-11 1999-09-16 Basf Ag Verfahren zur Trocknung und Herstellung von mikroporösen Teilchen sowie eine Vorrichtung zur Trocknung
WO1999049998A1 (en) * 1998-03-30 1999-10-07 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
US6846789B2 (en) * 1998-03-30 2005-01-25 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
US6277753B1 (en) * 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
CA2255413A1 (en) 1998-12-11 2000-06-11 Fracmaster Ltd. Foamed nitrogen in liquid co2 for fracturing
US6392070B1 (en) * 1999-08-10 2002-05-21 Regents Of The University Of Minnesota Birch bark processing and the isolation of natural products from birch bark
AU2001255656A1 (en) * 2000-04-25 2001-11-07 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
JP2004513189A (ja) * 2000-07-17 2004-04-30 ハネウェル・インターナショナル・インコーポレーテッド 担持された触媒系
AU2000266442A1 (en) * 2000-08-14 2002-02-25 Tokyo Electron Limited Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6740409B1 (en) * 2000-11-15 2004-05-25 Board Of Trustees Of University Of Illinois Polymer films
US6425956B1 (en) * 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
JP2002237481A (ja) * 2001-02-09 2002-08-23 Kobe Steel Ltd 微細構造体の洗浄方法
US6562146B1 (en) * 2001-02-15 2003-05-13 Micell Technologies, Inc. Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
US6398875B1 (en) * 2001-06-27 2002-06-04 International Business Machines Corporation Process of drying semiconductor wafers using liquid or supercritical carbon dioxide
US6838015B2 (en) * 2001-09-04 2005-01-04 International Business Machines Corporation Liquid or supercritical carbon dioxide composition
JP2003117508A (ja) * 2001-10-16 2003-04-22 Mitsubishi Materials Corp 洗浄装置
US6756084B2 (en) * 2002-05-28 2004-06-29 Battelle Memorial Institute Electrostatic deposition of particles generated from rapid expansion of supercritical fluid solutions
DE102004029077B4 (de) * 2003-06-26 2010-07-22 Samsung Electronics Co., Ltd., Suwon Vorrichtung und Verfahren zur Entfernung eines Photoresists von einem Substrat

Also Published As

Publication number Publication date
EP1749087A2 (en) 2007-02-07
KR20060135037A (ko) 2006-12-28
US7557073B2 (en) 2009-07-07
WO2005104682A2 (en) 2005-11-10
US20040198622A1 (en) 2004-10-07
JP2007535697A (ja) 2007-12-06
CN101098954A (zh) 2008-01-02
WO2005104682A3 (en) 2007-02-01

Similar Documents

Publication Publication Date Title
TW200609347A (en) Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
WO2004042472A3 (en) Supercritical carbon dioxide/chemical formulation for removal of photoresists
WO2005104214A3 (en) Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
SG134279A1 (en) Cleaning formulations
WO2005081811A3 (en) Composition for removal of odors and contaminants from textiles and method
MY127401A (en) Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
TW200710205A (en) Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
TW200630482A (en) Aqueous based residue removers comprising fluoride
ATE331020T1 (de) Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen
TW200613934A (en) Composition for removing photoresist residue and polymer residue
AU6348600A (en) Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
SG136966A1 (en) Composition for stripping and cleaning and use thereof
RU2010146038A (ru) Фармацевтические составы для местного применения, содержащие низкую концентрацию бензоилпероксида в суспензии в воде и смешивающимся с водой органическом растворителе
KR20060062033A (ko) 반도체 웨이퍼의 고효율 세정 및 연마를 위한 조성물 및방법
WO2003072215A3 (en) Methods and compositions for removing residues and substances from substrates using environmentally friendly solvents
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
WO2005123282A3 (en) Methods for wet cleaning quartz surfaces of components for plasma processing chambers
ATE517974T1 (de) Wässrige stripp- und reinigungszusammensetzung
AU4189599A (en) Silicate-containing alkaline compositions for cleaning microelectronic substrates
WO2006050298A3 (en) Benefit agent delivery system comprising ionic liquid
ATE288468T1 (de) Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substraten
ATE434033T1 (de) Nicht korrodierende reinigungsmittel zur entfernung von ätzmittelrückständen
WO2008153155A1 (ja) パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法
TW200715398A (en) Resist removing method and resist removing apparatus
SG152961A1 (en) Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction