JP2007535147A5 - - Google Patents

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Publication number
JP2007535147A5
JP2007535147A5 JP2007509644A JP2007509644A JP2007535147A5 JP 2007535147 A5 JP2007535147 A5 JP 2007535147A5 JP 2007509644 A JP2007509644 A JP 2007509644A JP 2007509644 A JP2007509644 A JP 2007509644A JP 2007535147 A5 JP2007535147 A5 JP 2007535147A5
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JP
Japan
Prior art keywords
dopant
flow
dichlorosilane
hydride
depositing
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JP2007509644A
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English (en)
Japanese (ja)
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JP2007535147A (ja
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Priority claimed from PCT/US2005/013674 external-priority patent/WO2005116304A2/en
Publication of JP2007535147A publication Critical patent/JP2007535147A/ja
Publication of JP2007535147A5 publication Critical patent/JP2007535147A5/ja
Withdrawn legal-status Critical Current

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JP2007509644A 2004-04-23 2005-04-21 インサイチュドープトエピタキシャルフィルム Withdrawn JP2007535147A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US56503304P 2004-04-23 2004-04-23
US56590904P 2004-04-27 2004-04-27
PCT/US2005/013674 WO2005116304A2 (en) 2004-04-23 2005-04-21 In situ doped epitaxial films

Publications (2)

Publication Number Publication Date
JP2007535147A JP2007535147A (ja) 2007-11-29
JP2007535147A5 true JP2007535147A5 (enExample) 2008-06-19

Family

ID=35451488

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JP2007509644A Withdrawn JP2007535147A (ja) 2004-04-23 2005-04-21 インサイチュドープトエピタキシャルフィルム

Country Status (5)

Country Link
US (1) US20050250298A1 (enExample)
EP (1) EP1738001A2 (enExample)
JP (1) JP2007535147A (enExample)
KR (1) KR20070006852A (enExample)
WO (1) WO2005116304A2 (enExample)

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JP2012119612A (ja) 2010-12-03 2012-06-21 Toshiba Corp 不純物濃度プロファイルの測定方法、その方法に用いられるウェーハ、および、その方法を用いる半導体装置の製造方法
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9853129B2 (en) 2016-05-11 2017-12-26 Applied Materials, Inc. Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth

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