JP2007528511A5 - - Google Patents
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- Publication number
- JP2007528511A5 JP2007528511A5 JP2007502433A JP2007502433A JP2007528511A5 JP 2007528511 A5 JP2007528511 A5 JP 2007528511A5 JP 2007502433 A JP2007502433 A JP 2007502433A JP 2007502433 A JP2007502433 A JP 2007502433A JP 2007528511 A5 JP2007528511 A5 JP 2007528511A5
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- JP
- Japan
- Prior art keywords
- solvent
- film
- alkyl
- seconds
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 description 4
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000011877 solvent mixture Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 125000005599 alkyl carboxylate group Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 2
- 239000004914 cyclooctane Substances 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- NIQLOLNJWXWZHX-UHFFFAOYSA-N 2-(5-bicyclo[2.2.1]hept-2-enylmethyl)-1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound C1C2C(CC(O)(C(F)(F)F)C(F)(F)F)CC1C=C2 NIQLOLNJWXWZHX-UHFFFAOYSA-N 0.000 description 1
- YYLLIJHXUHJATK-UHFFFAOYSA-N Cyclohexyl acetate Chemical compound CC(=O)OC1CCCCC1 YYLLIJHXUHJATK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000005233 alkylalcohol group Chemical group 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical group CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- XCIXKGXIYUWCLL-UHFFFAOYSA-N cyclopentanol Chemical compound OC1CCCC1 XCIXKGXIYUWCLL-UHFFFAOYSA-N 0.000 description 1
- YFPCLQKFNXUAAK-UHFFFAOYSA-N cyclopentyl acetate Chemical compound CC(=O)OC1CCCC1 YFPCLQKFNXUAAK-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical compound FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/796,376 | 2004-03-09 | ||
| US10/796,376 US20050202351A1 (en) | 2004-03-09 | 2004-03-09 | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| US10/875,596 US20050202347A1 (en) | 2004-03-09 | 2004-06-24 | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| US10/875,596 | 2004-06-24 | ||
| US11/044,305 | 2005-01-27 | ||
| US11/044,305 US7473512B2 (en) | 2004-03-09 | 2005-01-27 | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| PCT/IB2005/000627 WO2005088397A2 (en) | 2004-03-09 | 2005-03-08 | A process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011050965A Division JP5114806B2 (ja) | 2004-03-09 | 2011-03-09 | トップコートを用いて深紫外線フォトレジストに像を形成する方法およびそのための材料 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007528511A JP2007528511A (ja) | 2007-10-11 |
| JP2007528511A5 true JP2007528511A5 (enExample) | 2008-03-21 |
| JP4839470B2 JP4839470B2 (ja) | 2011-12-21 |
Family
ID=34919858
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007502433A Expired - Fee Related JP4839470B2 (ja) | 2004-03-09 | 2005-03-08 | トップコートを用いて深紫外線フォトレジストに像を形成する方法およびそのための材料 |
| JP2011050965A Expired - Fee Related JP5114806B2 (ja) | 2004-03-09 | 2011-03-09 | トップコートを用いて深紫外線フォトレジストに像を形成する方法およびそのための材料 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011050965A Expired - Fee Related JP5114806B2 (ja) | 2004-03-09 | 2011-03-09 | トップコートを用いて深紫外線フォトレジストに像を形成する方法およびそのための材料 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20050202351A1 (enExample) |
| JP (2) | JP4839470B2 (enExample) |
| CN (1) | CN1930524B (enExample) |
| MY (1) | MY145561A (enExample) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI297809B (enExample) * | 2001-10-24 | 2008-06-11 | Toyo Boseki | |
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| JP4265766B2 (ja) * | 2003-08-25 | 2009-05-20 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法 |
| EP2315078B1 (en) * | 2004-01-15 | 2012-10-17 | JSR Corporation | Upper layer film forming composition for liquid immersion and method of forming photoresist pattern |
| JP4355944B2 (ja) * | 2004-04-16 | 2009-11-04 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるレジスト上層膜材料 |
| KR100574490B1 (ko) * | 2004-04-27 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
| KR100960838B1 (ko) * | 2004-04-27 | 2010-06-07 | 도오꾜오까고오교 가부시끼가이샤 | 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법 |
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| JP4551701B2 (ja) * | 2004-06-14 | 2010-09-29 | 富士フイルム株式会社 | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 |
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| KR102278608B1 (ko) | 2017-03-10 | 2021-07-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
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| US6875555B1 (en) * | 2003-09-16 | 2005-04-05 | E.I. Du Pont De Nemours And Company | Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes) |
| US7432042B2 (en) * | 2003-12-03 | 2008-10-07 | United Microelectronics Corp. | Immersion lithography process and mask layer structure applied in the same |
| JP5301070B2 (ja) * | 2004-02-16 | 2013-09-25 | 東京応化工業株式会社 | 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法 |
| JP4507891B2 (ja) * | 2004-02-20 | 2010-07-21 | ダイキン工業株式会社 | 液浸リソグラフィーに用いるレジスト積層体 |
| JP3954066B2 (ja) * | 2004-02-25 | 2007-08-08 | 松下電器産業株式会社 | バリア膜形成用材料及びそれを用いたパターン形成方法 |
-
2004
- 2004-03-09 US US10/796,376 patent/US20050202351A1/en not_active Abandoned
- 2004-06-24 US US10/875,596 patent/US20050202347A1/en not_active Abandoned
-
2005
- 2005-03-07 MY MYPI20050922A patent/MY145561A/en unknown
- 2005-03-08 JP JP2007502433A patent/JP4839470B2/ja not_active Expired - Fee Related
- 2005-03-08 CN CN200580007583XA patent/CN1930524B/zh not_active Expired - Lifetime
-
2011
- 2011-03-09 JP JP2011050965A patent/JP5114806B2/ja not_active Expired - Fee Related
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