JP2007525827A5 - - Google Patents
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- Publication number
- JP2007525827A5 JP2007525827A5 JP2006541483A JP2006541483A JP2007525827A5 JP 2007525827 A5 JP2007525827 A5 JP 2007525827A5 JP 2006541483 A JP2006541483 A JP 2006541483A JP 2006541483 A JP2006541483 A JP 2006541483A JP 2007525827 A5 JP2007525827 A5 JP 2007525827A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- metal
- containing layer
- gate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 36
- 239000002184 metal Substances 0.000 claims 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 30
- 229910052799 carbon Inorganic materials 0.000 claims 29
- 238000000034 method Methods 0.000 claims 13
- 229920002120 photoresistant polymer Polymers 0.000 claims 11
- 238000000151 deposition Methods 0.000 claims 9
- 230000009977 dual effect Effects 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910000929 Ru alloy Inorganic materials 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 4
- 150000002739 metals Chemical class 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 2
- 229910052788 barium Inorganic materials 0.000 claims 2
- 229910052790 beryllium Inorganic materials 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052702 rhenium Inorganic materials 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- -1 silicon nitrides Chemical class 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 150000001721 carbon Chemical class 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 150000002843 nonmetals Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/722,557 | 2003-11-28 | ||
| US10/722,557 US7064050B2 (en) | 2003-11-28 | 2003-11-28 | Metal carbide gate structure and method of fabrication |
| PCT/US2004/039855 WO2005062752A2 (en) | 2003-11-28 | 2004-11-29 | Metal carbide gate structure and method of fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007525827A JP2007525827A (ja) | 2007-09-06 |
| JP2007525827A5 true JP2007525827A5 (enExample) | 2007-12-27 |
| JP5063113B2 JP5063113B2 (ja) | 2012-10-31 |
Family
ID=34619981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006541483A Expired - Fee Related JP5063113B2 (ja) | 2003-11-28 | 2004-11-29 | 半導体構造、二重仕事関数のｃｍｏｓデバイス、二重仕事関数のｃｍｏｓ回路、および基板上に二重仕事関数のｃｍｏｓデバイスを形成する方法（炭化金属ゲート構造および形成方法） |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7064050B2 (enExample) |
| EP (1) | EP1687457B1 (enExample) |
| JP (1) | JP5063113B2 (enExample) |
| KR (1) | KR100956714B1 (enExample) |
| CN (1) | CN101151724B (enExample) |
| AT (1) | ATE460746T1 (enExample) |
| DE (1) | DE602004025966D1 (enExample) |
| TW (1) | TWI374516B (enExample) |
| WO (1) | WO2005062752A2 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7226826B2 (en) * | 2004-04-16 | 2007-06-05 | Texas Instruments Incorporated | Semiconductor device having multiple work functions and method of manufacture therefor |
| DE102004030552B4 (de) * | 2004-06-24 | 2008-12-24 | Qimonda Ag | Schicht-Anordnung, Feldeffekttransistor und Verfahren zum Herstellen einer Schicht-Anordnung |
| US7514310B2 (en) * | 2004-12-01 | 2009-04-07 | Samsung Electronics Co., Ltd. | Dual work function metal gate structure and related method of manufacture |
| JP4764030B2 (ja) * | 2005-03-03 | 2011-08-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
| GB2424312B (en) * | 2005-03-14 | 2010-03-03 | Denso Corp | Method of forming an ohmic contact in wide band semiconductor |
| JP4607645B2 (ja) * | 2005-04-04 | 2011-01-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP4557879B2 (ja) * | 2005-12-09 | 2010-10-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2007214436A (ja) * | 2006-02-10 | 2007-08-23 | Tokyo Electron Ltd | 半導体装置の製造方法および半導体装置 |
| US20080272435A1 (en) * | 2007-05-02 | 2008-11-06 | Chien-Ting Lin | Semiconductor device and method of forming the same |
| JP5414053B2 (ja) * | 2007-12-07 | 2014-02-12 | 独立行政法人物質・材料研究機構 | 金属電極及びこれを用いた半導体素子 |
| US7781321B2 (en) | 2008-05-09 | 2010-08-24 | International Business Machines Corporation | Electroless metal deposition for dual work function |
| US8927057B2 (en) * | 2010-02-22 | 2015-01-06 | International Business Machines Corporation | Graphene formation utilizing solid phase carbon sources |
| US8574990B2 (en) | 2011-02-24 | 2013-11-05 | United Microelectronics Corp. | Method of manufacturing semiconductor device having metal gate |
| US8802524B2 (en) | 2011-03-22 | 2014-08-12 | United Microelectronics Corp. | Method of manufacturing semiconductor device having metal gates |
| JP2012204689A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 半導体装置及びその製造方法 |
| US8704294B2 (en) | 2011-06-13 | 2014-04-22 | United Microelectronics Corp. | Semiconductor device having metal gate and manufacturing method thereof |
| US8486790B2 (en) | 2011-07-18 | 2013-07-16 | United Microelectronics Corp. | Manufacturing method for metal gate |
| US8477006B2 (en) | 2011-08-30 | 2013-07-02 | United Microelectronics Corp. | Resistor and manufacturing method thereof |
| US8765588B2 (en) | 2011-09-28 | 2014-07-01 | United Microelectronics Corp. | Semiconductor process |
| US8709930B2 (en) | 2011-11-25 | 2014-04-29 | United Microelectronics Corp. | Semiconductor process |
| US8546212B2 (en) | 2011-12-21 | 2013-10-01 | United Microelectronics Corp. | Semiconductor device and fabricating method thereof |
| US8860181B2 (en) | 2012-03-07 | 2014-10-14 | United Microelectronics Corp. | Thin film resistor structure |
| US8951855B2 (en) | 2012-04-24 | 2015-02-10 | United Microelectronics Corp. | Manufacturing method for semiconductor device having metal gate |
| US9054172B2 (en) | 2012-12-05 | 2015-06-09 | United Microelectrnics Corp. | Semiconductor structure having contact plug and method of making the same |
| US8735269B1 (en) | 2013-01-15 | 2014-05-27 | United Microelectronics Corp. | Method for forming semiconductor structure having TiN layer |
| US9129985B2 (en) | 2013-03-05 | 2015-09-08 | United Microelectronics Corp. | Semiconductor device having metal gate and manufacturing method thereof |
| US9219078B2 (en) | 2013-04-18 | 2015-12-22 | International Business Machines Corporation | Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs |
| US9184254B2 (en) | 2013-05-02 | 2015-11-10 | United Microelectronics Corporation | Field-effect transistor and fabricating method thereof |
| US9159798B2 (en) | 2013-05-03 | 2015-10-13 | United Microelectronics Corp. | Replacement gate process and device manufactured using the same |
| US9196542B2 (en) | 2013-05-22 | 2015-11-24 | United Microelectronics Corp. | Method for manufacturing semiconductor devices |
| US8921947B1 (en) | 2013-06-10 | 2014-12-30 | United Microelectronics Corp. | Multi-metal gate semiconductor device having triple diameter metal opening |
| US9196546B2 (en) | 2013-09-13 | 2015-11-24 | United Microelectronics Corp. | Metal gate transistor |
| US9741577B2 (en) | 2015-12-02 | 2017-08-22 | International Business Machines Corporation | Metal reflow for middle of line contacts |
| US9960078B1 (en) | 2017-03-23 | 2018-05-01 | International Business Machines Corporation | Reflow interconnect using Ru |
| US10672649B2 (en) | 2017-11-08 | 2020-06-02 | International Business Machines Corporation | Advanced BEOL interconnect architecture |
| US10541199B2 (en) | 2017-11-29 | 2020-01-21 | International Business Machines Corporation | BEOL integration with advanced interconnects |
| TWI801222B (zh) * | 2022-04-26 | 2023-05-01 | 國立成功大學 | 多元合金材料層、其製造方法及半導體裝置的電容結構 |
| US11888159B1 (en) * | 2023-02-10 | 2024-01-30 | Lyten, Inc. | Material and method for increasing catalytic activity of electrocatalysts |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2552159B2 (ja) * | 1987-02-02 | 1996-11-06 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
| JPH0231462A (ja) * | 1988-07-20 | 1990-02-01 | Sharp Corp | 半導体素子 |
| JPH02155271A (ja) * | 1988-12-07 | 1990-06-14 | Toshiba Corp | 半導体装置 |
| CA2014296C (en) * | 1989-04-21 | 2000-08-01 | Nobuo Mikoshiba | Integrated circuit |
| JPH02296141A (ja) | 1989-05-10 | 1990-12-06 | Terumo Corp | 機能性素子及びそれを備えたｆｅｔセンサ |
| US5294822A (en) * | 1989-07-10 | 1994-03-15 | Texas Instruments Incorporated | Polycide local interconnect method and structure |
| JP2881267B2 (ja) * | 1991-01-11 | 1999-04-12 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2657588B2 (ja) * | 1991-01-11 | 1997-09-24 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
| US6344663B1 (en) * | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
| US5384470A (en) * | 1992-11-02 | 1995-01-24 | Kobe Steel, Usa, Inc. | High temperature rectifying contact including polycrystalline diamond and method for making same |
| JP3315541B2 (ja) * | 1994-11-04 | 2002-08-19 | 新日本無線株式会社 | ＳｉＣへの電極の形成方法 |
| KR0147626B1 (ko) | 1995-03-30 | 1998-11-02 | 김광호 | 타이타늄 카본 나이트라이드 게이트전극 형성방법 |
| DE19525069C1 (de) * | 1995-07-10 | 1996-10-24 | Siemens Ag | Verfahren zur Herstellung einer integrierten CMOS-Schaltung |
| US6028339A (en) * | 1996-08-29 | 2000-02-22 | International Business Machines Corporation | Dual work function CMOS device |
| US5770490A (en) * | 1996-08-29 | 1998-06-23 | International Business Machines Corporation | Method for producing dual work function CMOS device |
| US6936849B1 (en) * | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
| US6261887B1 (en) * | 1997-08-28 | 2001-07-17 | Texas Instruments Incorporated | Transistors with independently formed gate structures and method |
| US6087225A (en) * | 1998-02-05 | 2000-07-11 | International Business Machines Corporation | Method for dual gate oxide dual workfunction CMOS |
| US6492694B2 (en) * | 1998-02-27 | 2002-12-10 | Micron Technology, Inc. | Highly conductive composite polysilicon gate for CMOS integrated circuits |
| US6027961A (en) * | 1998-06-30 | 2000-02-22 | Motorola, Inc. | CMOS semiconductor devices and method of formation |
| KR100280102B1 (ko) * | 1998-10-13 | 2001-03-02 | 윤덕용 | 코발트-카본 합금박막을 이용한 단결정 코발트다이실리사이드콘택 형성방법 |
| US6291282B1 (en) * | 1999-02-26 | 2001-09-18 | Texas Instruments Incorporated | Method of forming dual metal gate structures or CMOS devices |
| US6492688B1 (en) * | 1999-03-02 | 2002-12-10 | Siemens Aktiengesellschaft | Dual work function CMOS device |
| US6194748B1 (en) * | 1999-05-03 | 2001-02-27 | Advanced Micro Devices, Inc. | MOSFET with suppressed gate-edge fringing field effect |
| JP3906020B2 (ja) * | 2000-09-27 | 2007-04-18 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2002217313A (ja) * | 2000-11-30 | 2002-08-02 | Texas Instruments Inc | 金属及び対応する金属珪化物から形成した各ゲートを有する相補形トランジスタ |
| KR100399356B1 (ko) * | 2001-04-11 | 2003-09-26 | 삼성전자주식회사 | 듀얼 게이트를 가지는 씨모스형 반도체 장치 형성 방법 |
| US6664589B2 (en) * | 2001-08-30 | 2003-12-16 | Micron Technology, Inc. | Technique to control tunneling currents in DRAM capacitors, cells, and devices |
| US6653698B2 (en) * | 2001-12-20 | 2003-11-25 | International Business Machines Corporation | Integration of dual workfunction metal gate CMOS devices |
| US6794234B2 (en) * | 2002-01-30 | 2004-09-21 | The Regents Of The University Of California | Dual work function CMOS gate technology based on metal interdiffusion |
| JP2004228547A (ja) * | 2002-11-29 | 2004-08-12 | Sony Corp | 半導体装置およびその製造方法 |
| US7122414B2 (en) * | 2002-12-03 | 2006-10-17 | Asm International, Inc. | Method to fabricate dual metal CMOS devices |
| US6858524B2 (en) * | 2002-12-03 | 2005-02-22 | Asm International, Nv | Method of depositing barrier layer for metal gates |
| US7138685B2 (en) * | 2002-12-11 | 2006-11-21 | International Business Machines Corporation | Vertical MOSFET SRAM cell |
| JP2004200550A (ja) * | 2002-12-20 | 2004-07-15 | Renesas Technology Corp | 半導体装置の製造方法 |
| US6933222B2 (en) * | 2003-01-02 | 2005-08-23 | Intel Corporation | Microcircuit fabrication and interconnection |
| US6972224B2 (en) * | 2003-03-27 | 2005-12-06 | Freescale Semiconductor, Inc. | Method for fabricating dual-metal gate device |
| US20050049954A1 (en) * | 2003-09-03 | 2005-03-03 | Graham Russell J. | Portfolio compliance managing techniques |
| US7148546B2 (en) * | 2003-09-30 | 2006-12-12 | Texas Instruments Incorporated | MOS transistor gates with doped silicide and methods for making the same |
| US20050095763A1 (en) * | 2003-10-29 | 2005-05-05 | Samavedam Srikanth B. | Method of forming an NMOS transistor and structure thereof |
| US7129182B2 (en) * | 2003-11-06 | 2006-10-31 | Intel Corporation | Method for etching a thin metal layer |
| US6869889B1 (en) * | 2004-04-07 | 2005-03-22 | Intel Corporation | Etching metal carbide films |
-
2003
- 2003-11-28 US US10/722,557 patent/US7064050B2/en not_active Expired - Fee Related
-
2004
- 2004-11-19 TW TW093135600A patent/TWI374516B/zh not_active IP Right Cessation
- 2004-11-29 CN CN2004800351638A patent/CN101151724B/zh not_active Expired - Lifetime
- 2004-11-29 KR KR1020067010352A patent/KR100956714B1/ko not_active Expired - Fee Related
- 2004-11-29 WO PCT/US2004/039855 patent/WO2005062752A2/en not_active Ceased
- 2004-11-29 EP EP04812387A patent/EP1687457B1/en not_active Expired - Lifetime
- 2004-11-29 AT AT04812387T patent/ATE460746T1/de not_active IP Right Cessation
- 2004-11-29 DE DE602004025966T patent/DE602004025966D1/de not_active Expired - Lifetime
- 2004-11-29 JP JP2006541483A patent/JP5063113B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-10 US US11/372,140 patent/US7667278B2/en not_active Expired - Fee Related
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