JP2007525594A5 - - Google Patents

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Publication number
JP2007525594A5
JP2007525594A5 JP2006543928A JP2006543928A JP2007525594A5 JP 2007525594 A5 JP2007525594 A5 JP 2007525594A5 JP 2006543928 A JP2006543928 A JP 2006543928A JP 2006543928 A JP2006543928 A JP 2006543928A JP 2007525594 A5 JP2007525594 A5 JP 2007525594A5
Authority
JP
Japan
Prior art keywords
wafer
radiant energy
plating solution
electroless plating
support structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006543928A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007525594A (ja
JP4742047B2 (ja
Filing date
Publication date
Priority claimed from US10/735,216 external-priority patent/US7358186B2/en
Priority claimed from US10/734,704 external-priority patent/US7368017B2/en
Application filed filed Critical
Priority claimed from PCT/US2004/040951 external-priority patent/WO2005061760A1/en
Publication of JP2007525594A publication Critical patent/JP2007525594A/ja
Publication of JP2007525594A5 publication Critical patent/JP2007525594A5/ja
Application granted granted Critical
Publication of JP4742047B2 publication Critical patent/JP4742047B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006543928A 2003-12-12 2004-12-07 材料成長のための方法および装置 Expired - Fee Related JP4742047B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/735,216 US7358186B2 (en) 2003-12-12 2003-12-12 Method and apparatus for material deposition in semiconductor fabrication
US10/734,704 US7368017B2 (en) 2003-12-12 2003-12-12 Method and apparatus for semiconductor wafer planarization
US10/735,216 2003-12-12
US10/734,704 2003-12-12
PCT/US2004/040951 WO2005061760A1 (en) 2003-12-12 2004-12-07 Method and apparatus for material deposition

Publications (3)

Publication Number Publication Date
JP2007525594A JP2007525594A (ja) 2007-09-06
JP2007525594A5 true JP2007525594A5 (https=) 2007-10-25
JP4742047B2 JP4742047B2 (ja) 2011-08-10

Family

ID=34713904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006543928A Expired - Fee Related JP4742047B2 (ja) 2003-12-12 2004-12-07 材料成長のための方法および装置

Country Status (7)

Country Link
EP (1) EP1692324B1 (https=)
JP (1) JP4742047B2 (https=)
KR (1) KR101233444B1 (https=)
MY (1) MY184648A (https=)
SG (3) SG149018A1 (https=)
TW (1) TWI319784B (https=)
WO (1) WO2005061760A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI846928B (zh) * 2019-08-27 2024-07-01 日商東京威力科創股份有限公司 基板液處理方法、基板液處理裝置、及電腦可讀取記錄媒體

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239789A (en) * 1979-05-08 1980-12-16 International Business Machines Corporation Maskless method for electroless plating patterns
US4359485A (en) * 1981-05-01 1982-11-16 Bell Telephone Laboratories, Incorporated Radiation induced deposition of metal on semiconductor surfaces
JPS61104083A (ja) * 1984-10-27 1986-05-22 Hitachi Ltd 無電解めつき方法
EP0260516A1 (en) * 1986-09-15 1988-03-23 General Electric Company Photoselective metal deposition process
US4982065A (en) * 1989-03-07 1991-01-01 Ngk Insulators, Ltd. Method of producing a core for magnetic head
US5260108A (en) * 1992-03-10 1993-11-09 International Business Machines Corporation Selective seeding of Pd by excimer laser radiation through the liquid
JPH10219468A (ja) * 1997-02-07 1998-08-18 Matsushita Electric Ind Co Ltd 導体化膜形成方法
JPH1192951A (ja) * 1997-09-16 1999-04-06 Ebara Corp 基板のめっき方法
US5989653A (en) * 1997-12-08 1999-11-23 Sandia Corporation Process for metallization of a substrate by irradiative curing of a catalyst applied thereto
JP3792038B2 (ja) * 1998-01-09 2006-06-28 株式会社荏原製作所 めっき装置
IE980461A1 (en) * 1998-06-15 2000-05-03 Univ Cork Method for selective activation and metallisation of materials
JP2002532620A (ja) * 1998-12-10 2002-10-02 ナウンドルフ・ゲルハルト 印刷導体構造物の製造方法
JP4035752B2 (ja) * 2000-03-31 2008-01-23 セイコーエプソン株式会社 微細構造体の製造方法

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