JP4742047B2 - 材料成長のための方法および装置 - Google Patents
材料成長のための方法および装置 Download PDFInfo
- Publication number
- JP4742047B2 JP4742047B2 JP2006543928A JP2006543928A JP4742047B2 JP 4742047 B2 JP4742047 B2 JP 4742047B2 JP 2006543928 A JP2006543928 A JP 2006543928A JP 2006543928 A JP2006543928 A JP 2006543928A JP 4742047 B2 JP4742047 B2 JP 4742047B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- radiant energy
- electroless plating
- plating solution
- planar member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1667—Radiant energy, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/735,216 US7358186B2 (en) | 2003-12-12 | 2003-12-12 | Method and apparatus for material deposition in semiconductor fabrication |
| US10/734,704 US7368017B2 (en) | 2003-12-12 | 2003-12-12 | Method and apparatus for semiconductor wafer planarization |
| US10/735,216 | 2003-12-12 | ||
| US10/734,704 | 2003-12-12 | ||
| PCT/US2004/040951 WO2005061760A1 (en) | 2003-12-12 | 2004-12-07 | Method and apparatus for material deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007525594A JP2007525594A (ja) | 2007-09-06 |
| JP2007525594A5 JP2007525594A5 (https=) | 2007-10-25 |
| JP4742047B2 true JP4742047B2 (ja) | 2011-08-10 |
Family
ID=34713904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006543928A Expired - Fee Related JP4742047B2 (ja) | 2003-12-12 | 2004-12-07 | 材料成長のための方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1692324B1 (https=) |
| JP (1) | JP4742047B2 (https=) |
| KR (1) | KR101233444B1 (https=) |
| MY (1) | MY184648A (https=) |
| SG (3) | SG149018A1 (https=) |
| TW (1) | TWI319784B (https=) |
| WO (1) | WO2005061760A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI846928B (zh) * | 2019-08-27 | 2024-07-01 | 日商東京威力科創股份有限公司 | 基板液處理方法、基板液處理裝置、及電腦可讀取記錄媒體 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239789A (en) * | 1979-05-08 | 1980-12-16 | International Business Machines Corporation | Maskless method for electroless plating patterns |
| US4359485A (en) * | 1981-05-01 | 1982-11-16 | Bell Telephone Laboratories, Incorporated | Radiation induced deposition of metal on semiconductor surfaces |
| JPS61104083A (ja) * | 1984-10-27 | 1986-05-22 | Hitachi Ltd | 無電解めつき方法 |
| EP0260516A1 (en) * | 1986-09-15 | 1988-03-23 | General Electric Company | Photoselective metal deposition process |
| US4982065A (en) * | 1989-03-07 | 1991-01-01 | Ngk Insulators, Ltd. | Method of producing a core for magnetic head |
| US5260108A (en) * | 1992-03-10 | 1993-11-09 | International Business Machines Corporation | Selective seeding of Pd by excimer laser radiation through the liquid |
| JPH10219468A (ja) * | 1997-02-07 | 1998-08-18 | Matsushita Electric Ind Co Ltd | 導体化膜形成方法 |
| JPH1192951A (ja) * | 1997-09-16 | 1999-04-06 | Ebara Corp | 基板のめっき方法 |
| US5989653A (en) * | 1997-12-08 | 1999-11-23 | Sandia Corporation | Process for metallization of a substrate by irradiative curing of a catalyst applied thereto |
| JP3792038B2 (ja) * | 1998-01-09 | 2006-06-28 | 株式会社荏原製作所 | めっき装置 |
| IE980461A1 (en) * | 1998-06-15 | 2000-05-03 | Univ Cork | Method for selective activation and metallisation of materials |
| JP2002532620A (ja) * | 1998-12-10 | 2002-10-02 | ナウンドルフ・ゲルハルト | 印刷導体構造物の製造方法 |
| JP4035752B2 (ja) * | 2000-03-31 | 2008-01-23 | セイコーエプソン株式会社 | 微細構造体の製造方法 |
-
2004
- 2004-12-02 MY MYPI20044983A patent/MY184648A/en unknown
- 2004-12-07 KR KR1020067011581A patent/KR101233444B1/ko not_active Expired - Fee Related
- 2004-12-07 EP EP04813286.4A patent/EP1692324B1/en not_active Expired - Lifetime
- 2004-12-07 SG SG200809204-1A patent/SG149018A1/en unknown
- 2004-12-07 WO PCT/US2004/040951 patent/WO2005061760A1/en not_active Ceased
- 2004-12-07 SG SG2012043196A patent/SG182190A1/en unknown
- 2004-12-07 JP JP2006543928A patent/JP4742047B2/ja not_active Expired - Fee Related
- 2004-12-07 SG SG200809205-8A patent/SG149019A1/en unknown
- 2004-12-10 TW TW093138385A patent/TWI319784B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007525594A (ja) | 2007-09-06 |
| WO2005061760A1 (en) | 2005-07-07 |
| KR101233444B1 (ko) | 2013-02-14 |
| TW200526811A (en) | 2005-08-16 |
| MY184648A (en) | 2021-04-14 |
| EP1692324A1 (en) | 2006-08-23 |
| TWI319784B (en) | 2010-01-21 |
| EP1692324B1 (en) | 2018-10-03 |
| SG149018A1 (en) | 2009-01-29 |
| SG149019A1 (en) | 2009-01-29 |
| SG182190A1 (en) | 2012-07-30 |
| KR20060123313A (ko) | 2006-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8490573B2 (en) | Method and apparatus for material deposition | |
| US9741559B2 (en) | Film forming method, computer storage medium, and film forming system | |
| US20020020621A1 (en) | Semiconductor workpiece proximity plating apparatus | |
| WO2000059682A1 (en) | Method and apparatus for plating and polishing a semiconductor substrate | |
| JP2005079212A (ja) | 半導体製造装置、及び半導体装置の製造方法 | |
| TW201737320A (zh) | 用於光激發製程之設備 | |
| JP2012507858A (ja) | 半導体ウエハ処理のための音響を用いた枚葉式ウエハ湿式洗浄 | |
| JP2004107747A (ja) | 無電解メッキ装置、および無電解メッキ方法 | |
| KR102338512B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
| CN101391255B (zh) | 生成超声振动的装置与方法及用其清洗晶片的装置与方法 | |
| JP4742047B2 (ja) | 材料成長のための方法および装置 | |
| US20210366697A1 (en) | Forming method of component and substrate processing system | |
| US20050196523A1 (en) | Electroless plating method and apparatus, and computer storage medium storing program for controlling same | |
| US7582565B2 (en) | Method and apparatus for semiconductor wafer planarization | |
| JP2000124120A (ja) | 塗布処理方法 | |
| KR20170088398A (ko) | 기판상의 균일한 금속화를 위한 장치 및 방법 | |
| KR102504557B1 (ko) | 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 | |
| KR20180127137A (ko) | 기판 연마 장치 및 기판 연마 방법 | |
| JP2012216715A (ja) | 基板処理装置および半導体装置の製造方法 | |
| JPH1180968A (ja) | めっき装置 | |
| WO2021117493A1 (ja) | 基板液処理方法及び基板液処理装置 | |
| KR20050109378A (ko) | 레이저를 이용한 고품질 soi웨이퍼 제조장치 및 방법 | |
| JP2023081858A (ja) | 基板処理装置及び基板処理方法 | |
| JP5525462B2 (ja) | 絶縁膜の形成方法および基板処理装置 | |
| KR20180133022A (ko) | 기판 처리 장치 및 기판 처리 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A529 | Written submission of copy of amendment under article 34 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A529 Effective date: 20060809 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061220 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070906 |
|
| A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A072 Effective date: 20071211 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090526 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090602 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090901 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090908 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091001 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100817 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101217 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20101217 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110119 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110301 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110401 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110426 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110509 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4742047 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140513 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |