SG149018A1 - Method and apparatus for material deposition - Google Patents

Method and apparatus for material deposition

Info

Publication number
SG149018A1
SG149018A1 SG200809204-1A SG2008092041A SG149018A1 SG 149018 A1 SG149018 A1 SG 149018A1 SG 2008092041 A SG2008092041 A SG 2008092041A SG 149018 A1 SG149018 A1 SG 149018A1
Authority
SG
Singapore
Prior art keywords
wafer surface
electroless plating
planar member
plating solution
wafer
Prior art date
Application number
SG200809204-1A
Other languages
English (en)
Inventor
Yezdi Dordi
John Boyd
William Thie
Bob Maraschin
Fred C Redeker
Joel M Cook
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/735,216 external-priority patent/US7358186B2/en
Priority claimed from US10/734,704 external-priority patent/US7368017B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG149018A1 publication Critical patent/SG149018A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1664—Process features with additional means during the plating process
    • C23C18/1667—Radiant energy, e.g. laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1676—Heating of the solution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrochemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
SG200809204-1A 2003-12-12 2004-12-07 Method and apparatus for material deposition SG149018A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/735,216 US7358186B2 (en) 2003-12-12 2003-12-12 Method and apparatus for material deposition in semiconductor fabrication
US10/734,704 US7368017B2 (en) 2003-12-12 2003-12-12 Method and apparatus for semiconductor wafer planarization

Publications (1)

Publication Number Publication Date
SG149018A1 true SG149018A1 (en) 2009-01-29

Family

ID=34713904

Family Applications (3)

Application Number Title Priority Date Filing Date
SG200809204-1A SG149018A1 (en) 2003-12-12 2004-12-07 Method and apparatus for material deposition
SG2012043196A SG182190A1 (en) 2003-12-12 2004-12-07 Method and apparatus for material deposition
SG200809205-8A SG149019A1 (en) 2003-12-12 2004-12-07 Method and apparatus for material deposition

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG2012043196A SG182190A1 (en) 2003-12-12 2004-12-07 Method and apparatus for material deposition
SG200809205-8A SG149019A1 (en) 2003-12-12 2004-12-07 Method and apparatus for material deposition

Country Status (7)

Country Link
EP (1) EP1692324B1 (https=)
JP (1) JP4742047B2 (https=)
KR (1) KR101233444B1 (https=)
MY (1) MY184648A (https=)
SG (3) SG149018A1 (https=)
TW (1) TWI319784B (https=)
WO (1) WO2005061760A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI846928B (zh) * 2019-08-27 2024-07-01 日商東京威力科創股份有限公司 基板液處理方法、基板液處理裝置、及電腦可讀取記錄媒體

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239789A (en) * 1979-05-08 1980-12-16 International Business Machines Corporation Maskless method for electroless plating patterns
US4359485A (en) * 1981-05-01 1982-11-16 Bell Telephone Laboratories, Incorporated Radiation induced deposition of metal on semiconductor surfaces
JPS61104083A (ja) * 1984-10-27 1986-05-22 Hitachi Ltd 無電解めつき方法
EP0260516A1 (en) * 1986-09-15 1988-03-23 General Electric Company Photoselective metal deposition process
US4982065A (en) * 1989-03-07 1991-01-01 Ngk Insulators, Ltd. Method of producing a core for magnetic head
US5260108A (en) * 1992-03-10 1993-11-09 International Business Machines Corporation Selective seeding of Pd by excimer laser radiation through the liquid
JPH10219468A (ja) * 1997-02-07 1998-08-18 Matsushita Electric Ind Co Ltd 導体化膜形成方法
JPH1192951A (ja) * 1997-09-16 1999-04-06 Ebara Corp 基板のめっき方法
US5989653A (en) * 1997-12-08 1999-11-23 Sandia Corporation Process for metallization of a substrate by irradiative curing of a catalyst applied thereto
JP3792038B2 (ja) * 1998-01-09 2006-06-28 株式会社荏原製作所 めっき装置
IE980461A1 (en) * 1998-06-15 2000-05-03 Univ Cork Method for selective activation and metallisation of materials
JP2002532620A (ja) * 1998-12-10 2002-10-02 ナウンドルフ・ゲルハルト 印刷導体構造物の製造方法
JP4035752B2 (ja) * 2000-03-31 2008-01-23 セイコーエプソン株式会社 微細構造体の製造方法

Also Published As

Publication number Publication date
JP2007525594A (ja) 2007-09-06
WO2005061760A1 (en) 2005-07-07
KR101233444B1 (ko) 2013-02-14
TW200526811A (en) 2005-08-16
MY184648A (en) 2021-04-14
EP1692324A1 (en) 2006-08-23
TWI319784B (en) 2010-01-21
EP1692324B1 (en) 2018-10-03
JP4742047B2 (ja) 2011-08-10
SG149019A1 (en) 2009-01-29
SG182190A1 (en) 2012-07-30
KR20060123313A (ko) 2006-12-01

Similar Documents

Publication Publication Date Title
WO2005036615A3 (en) Apparatus to improve wafer temperature uniformity for face-up wet processing
US6896586B2 (en) Method and apparatus for heating polishing pad
TW200616515A (en) Method and system for substrate temperature porfile control
WO2003014416A3 (en) Plating device and method
WO2004025710A3 (en) Method of heating a substrate in a variable temperature process using a fixed temperature chuck
EA200870527A1 (ru) Установка и способы изготовления стержней из высокочистого кремния с использованием смешанного сердечникового средства
TW281775B (en) Parylene deposition apparatus including a quartz crystal thickness/rate controller
KR20110046579A (ko) 반도체 프로세스 챔버
CN208336146U (zh) 基板氧化组件
CN101641162B (zh) 用于平坦衬底表面改性的方法和设备
IL156179A0 (en) Method for thermally treating substrates
SG149018A1 (en) Method and apparatus for material deposition
TWI255867B (en) Electroless plating apparatus
US11834754B2 (en) ALD method with multi-chambers for sic or multi-elements epitaxial growth
KR20100054502A (ko) 다채널을 이용한 공정가스 공급이 가능한 화학기상증착 장치
TW200625508A (en) Treating apparatus
AU2001250604A1 (en) Method and apparatus for temperature controlled vapor deposition on a substrate
TW200625517A (en) Gradient deposition of low-k CVD materials
TW200619414A (en) Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
JP2005051153A (ja) Ｃｖｄ装置
TW200724731A (en) Method for preparing electroconductive particles with improved dispersion and adherence
ATE322081T1 (de) Kupferabscheidungsverfahren
DE602004022882D1 (de) Ner geringen dichte von löchern
TW200633099A (en) Metallization target optimization method providing enhanced metallization layer uniformity
TW200504865A (en) Surface modification method and surface modification apparatus for interlayer insulating film