JP5086375B2 - フラット基板の表面改質方法及び装置 - Google Patents
フラット基板の表面改質方法及び装置 Download PDFInfo
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- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- 239000005083 Zinc sulfide Substances 0.000 abstract description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract description 8
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 13
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
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- 239000000463 material Substances 0.000 description 8
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
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- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 239000007858 starting material Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical class [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/18—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material only one side of the work coming into contact with the liquid or other fluent material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/36—Underside coating of a glass sheet
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Sustainable Development (AREA)
- Coating Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Integrated Circuits (AREA)
- Chemically Coating (AREA)
Description
のモリブデン(Mo)からなる背面接点(バックコンタクト)、続いて1−2μmの銅-インジウム-硫化物、銅-インジウム-二セレン化物、銅-ガリウム-硫化物、または銅-ガリウム-二セレン化物(一般に CI(G)S(Se)と称する)からなる薄層が基板の片側面上に施される。このしかるべく改質された基板面が引き続く工程において、硫化カドミウム(CdS)や硫化亜鉛(ZnS)などによる、いわゆる硫化緩衝層で被覆される。出発物質としては通常、カドミウムや亜鉛の硫酸塩や酢酸塩などの、カドミウムや亜鉛を含む化合物及び塩が用いられる。そのような硫酸塩や酢酸塩は例えば、チオ尿素(THS、CH4N2S)及びアンモニアゴム(NH4OH)で、これらは別々に保存され、被覆の直前に所望の関係で混合される。被覆によって得られ、一般的には30−90nm、特には30−60nmの厚さを有するCdSまたはZnSの薄層は、最適な効率を得るため、その前に被着されたCI(G)S(Se)に堅固に接着し、且つその構造においてできる限り一様にすべきである。被覆する基板は典型的には、長さ1,200mm、幅600mm、及び厚さ3mmを有する一方、被覆全体はナノメータからミクロメータの領域の厚さに過ぎない。但し今後は、コスト最適化のため、さらに大きいサイズの基板が望まれている。
1 装置
2 基板
3 処理槽
4 冷却槽
5 ダクト
6 混合タンク
7 リザーバ
8 冷却手段
9 ドレイン
10A 入口
10B リップ
11 加熱手段
12 搬送方向
13 温度分布
14 混合手段
F 処理液、液体
K 冷却液
Claims (13)
- 処理槽(3)内に存在する液体(F)を用いて、基板(2)の被覆のごとき片側湿式の化学的表面改質を行う方法で、液体の化学的成分は永久的な層の形成に際し、基板表面上に適切な温度制御によって被着される方法において、所望な層の形成のために必要となる被覆を施すべき基板下側面の加熱は、基板(2)を、被覆が施されない基板の上側面側から必要な温度に加熱する少なくとも一つの適切な加熱手段(11)によって行われ、処理を施さない基板上側面は処理中加熱液で湿潤されず、しかも基板(2)は上方から保持または保護されない方法。
- 前記基板(2)は、フラットである請求項1に記載の方法。
- 基板(2)はガラス、金属及び/又はプラスチックからなり、前記被覆は薄膜太陽電池もしくはモジュールの生産時に行われ、処理液(F)はカドミウムまたは亜鉛それぞれの硫酸塩または酢酸塩を含む請求項1又は2に記載の方法。
- 処理液(F)の組成及び/又は温度は連続的にモニターされ、必要に応じて再調整される請求項1から3までのいずれか一項に記載の方法。
- 処理中、基板(2)はその被覆すべき下側面が搬送手段上に載置され、処理液(F)上または中を通って連続的に搬送される請求項1から4までのいずれか一項に記載の方法。
- 基板(2)を加熱する幾つかの手段(11)が用いられ、それら加熱手段(11)のパワーは相互に独立に制御可能である請求項1から5までのいずれか一項に記載の方法。
- 前記基板の下側面はその被覆中、異なる温度に一様に加熱される請求項1から6までのいずれか一項に記載の方法。
- 被覆すべき前記基板の下側面が処理液(F)上または中を通って搬送される間、搬送方向(12)に沿って所定の温度分布(13)を生じるあるいは呈するように、加熱手段(11)が相互に独立に制御される請求項1から7までのいずれか一項に記載の方法。
- 温度分布(13)は、搬送方向(12)と直交する方向の基板(2)の切断面においてほぼ一定である請求項8に記載の方法。
- 基板(2)を加熱する手段(11)のうち一つまたは複数は、熱放射器、熱伝達装置、熱誘導体、及びそれらの組み合わせからなる群の中から選択される請求項1から9までのいずれか一項に記載の方法。
- 一つまたは複数の熱放射器は、長波長の赤外線放射器、赤外線レーザ、及びマイクロ波装置からなる群の中から選択される請求項10に記載の方法。
- 一つまたは複数の熱伝達装置は、加熱可能なプレート、シリンダ、ローラ、バンド、マット、及び箔からなる群の中から選択される請求項10に記載の方法。
- 一つまたは複数の熱誘導体は、誘導コイル及び誘導体からなる群の中から選択される請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007024667.8 | 2007-05-25 | ||
DE102007024667A DE102007024667A1 (de) | 2007-05-25 | 2007-05-25 | Verfahren und Vorrichtung zum Beschichten von flachen Substraten |
PCT/EP2008/004053 WO2008145285A1 (de) | 2007-05-25 | 2008-05-20 | Verfahren und vorrichtung zur oberflächenmodifikation von flachen substraten |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010521068A JP2010521068A (ja) | 2010-06-17 |
JP5086375B2 true JP5086375B2 (ja) | 2012-11-28 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009553085A Expired - Fee Related JP5086375B2 (ja) | 2007-05-25 | 2008-05-20 | フラット基板の表面改質方法及び装置 |
Country Status (13)
Country | Link |
---|---|
US (1) | US20100062184A1 (ja) |
EP (1) | EP2155403B1 (ja) |
JP (1) | JP5086375B2 (ja) |
KR (1) | KR101093677B1 (ja) |
CN (1) | CN101641162B (ja) |
AT (1) | ATE483832T1 (ja) |
AU (1) | AU2008256510B2 (ja) |
DE (2) | DE102007024667A1 (ja) |
ES (1) | ES2353452T3 (ja) |
IL (1) | IL200539A0 (ja) |
PL (1) | PL2155403T3 (ja) |
RU (1) | RU2422216C2 (ja) |
WO (1) | WO2008145285A1 (ja) |
Families Citing this family (7)
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DE102007024667A1 (de) * | 2007-05-25 | 2008-11-27 | Rena Sondermaschinen Gmbh | Verfahren und Vorrichtung zum Beschichten von flachen Substraten |
US20110123728A1 (en) * | 2009-11-25 | 2011-05-26 | Ricoh Company, Ltd. | Thin film manufacturing method and thin film element |
DE102013006594B4 (de) | 2013-04-17 | 2015-06-18 | Kautex Textron Gmbh & Co. Kg | Verfahren zur Herstellung eines Behälters aus thermoplastischem Kunststoff |
US9784835B1 (en) | 2013-09-27 | 2017-10-10 | Waymo Llc | Laser diode timing feedback using trace loop |
KR20170020683A (ko) | 2015-08-14 | 2017-02-23 | ㈜리커시브소프트 | 신호등 신호 감지에 의한 신호변경 운전자 알림 시스템 |
CN107299335B (zh) * | 2017-07-19 | 2023-07-21 | 旭科新能源股份有限公司 | 一种水浴法沉积薄膜的热气及反应液循环利用的装置及方法 |
CN109406565B (zh) * | 2017-08-15 | 2022-01-04 | 中国科学院上海硅酸盐研究所 | 一种大尺寸块体材料的化学成分分布的表征方法 |
Family Cites Families (11)
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US4004045A (en) * | 1974-08-09 | 1977-01-18 | Stelter Manfred K | Method for fluid film application |
US4353942A (en) * | 1980-11-17 | 1982-10-12 | Dayco Corporation | Coating method |
IT1299963B1 (it) * | 1998-04-08 | 2000-04-04 | Gd Spa | Metodo ed unita' per la gommatura di materiale in foglio. |
JP4549570B2 (ja) * | 2001-05-15 | 2010-09-22 | 昭和シェル石油株式会社 | ヘテロ接合薄膜太陽電池の製造方法 |
KR100587448B1 (ko) * | 2001-08-09 | 2006-06-12 | 샤프 가부시키가이샤 | 박판 제조 장치, 박판 제조 방법 및 태양 전지 |
US6537845B1 (en) * | 2001-08-30 | 2003-03-25 | Mccandless Brian E. | Chemical surface deposition of ultra-thin semiconductors |
JP2003124487A (ja) * | 2001-10-18 | 2003-04-25 | Matsushita Electric Ind Co Ltd | 太陽電池の製造装置 |
DE50200399D1 (de) * | 2002-04-15 | 2004-06-03 | Rena Sondermaschinen Gmbh | Transportrollen, Niederhalter und Transportsystem für flaches Transportgut |
DE102004040546B3 (de) | 2004-08-18 | 2006-05-18 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zum Aufbringen einer Zinksulfid-Pufferschicht auf ein Halbleitersubstrat mittels chemischer Badabscheidung, insbesondere auf die Absorberschicht einer Chalkopyrit-Dünnschicht-Solarzelle |
EP1785273A1 (en) * | 2005-09-21 | 2007-05-16 | Kba-Giori S.A. | Apparatus for coating a cylinder, in particular a wiping cylinder of an intaglio printing press |
DE102007024667A1 (de) * | 2007-05-25 | 2008-11-27 | Rena Sondermaschinen Gmbh | Verfahren und Vorrichtung zum Beschichten von flachen Substraten |
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2007
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- 2008-05-20 CN CN200880006347XA patent/CN101641162B/zh not_active Expired - Fee Related
- 2008-05-20 AT AT08758660T patent/ATE483832T1/de active
- 2008-05-20 AU AU2008256510A patent/AU2008256510B2/en not_active Ceased
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- 2008-05-20 WO PCT/EP2008/004053 patent/WO2008145285A1/de active Application Filing
- 2008-05-20 KR KR1020097018465A patent/KR101093677B1/ko not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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DE102007024667A1 (de) | 2008-11-27 |
WO2008145285A1 (de) | 2008-12-04 |
RU2422216C2 (ru) | 2011-06-27 |
AU2008256510B2 (en) | 2010-12-16 |
CN101641162B (zh) | 2013-03-06 |
US20100062184A1 (en) | 2010-03-11 |
KR101093677B1 (ko) | 2011-12-15 |
JP2010521068A (ja) | 2010-06-17 |
KR20090130368A (ko) | 2009-12-23 |
ES2353452T3 (es) | 2011-03-02 |
EP2155403B1 (de) | 2010-10-06 |
IL200539A0 (en) | 2010-05-31 |
CN101641162A (zh) | 2010-02-03 |
ATE483832T1 (de) | 2010-10-15 |
PL2155403T3 (pl) | 2011-04-29 |
AU2008256510A1 (en) | 2008-12-04 |
DE502008001485D1 (de) | 2010-11-18 |
RU2009130107A (ru) | 2011-02-10 |
EP2155403A1 (de) | 2010-02-24 |
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