JP2007524232A - 回路基板の乾燥方法および装置 - Google Patents
回路基板の乾燥方法および装置 Download PDFInfo
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- JP2007524232A JP2007524232A JP2006529632A JP2006529632A JP2007524232A JP 2007524232 A JP2007524232 A JP 2007524232A JP 2006529632 A JP2006529632 A JP 2006529632A JP 2006529632 A JP2006529632 A JP 2006529632A JP 2007524232 A JP2007524232 A JP 2007524232A
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- 238000001035 drying Methods 0.000 title claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 96
- 238000004140 cleaning Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000005499 meniscus Effects 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000005855 radiation Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000007704 transition Effects 0.000 claims abstract description 8
- 238000009423 ventilation Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 18
- 239000000463 material Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000010512 thermal transition Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
- F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microbiology (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Abstract
Description
Claims (12)
- 前記回路基板(13)、特に半導体基板を乾燥するための方法であり、洗浄工程において、洗浄液(10)を用いて回路基板の回路面(29、30)を洗浄し、続いて行なわれる乾燥工程において、前記回路面を乾燥する工程を含む方法であって、
前記洗浄工程において、前記回路基板を、その平面の延長方向において横方向に、前記洗浄液の前記液面(28)に対して相対的に移動して、前記回路面と、前記基板に対する相対移動によって変化する液面との間の移行領域(35)で液体メニスカス(31、32)を生じさせ、
前記乾燥工程において、前記液体メニスカスによって濡らされた前記移行領域に熱輻射(36)を与える
ことを特徴とする方法。 - 前記熱輻射(36)を、赤外線放熱器を用いて与えることを特徴とする、請求項1に記載の方法。
- 前記液面(28)と前記回路基板(13)の相対移動を行うために、前記回路基板を、液浴容器(11)に収容された前記洗浄液(10)中に配置し、前記液面を下げることを特徴とする、請求項1または2に記載の方法。
- 前記熱輻射(36)を、前記液面(28)に、横方向に与えることを特徴とする、請求項1から3のいずれか1つに記載の方法。
- 前記液面(28)より上方に設けられた容器空間(33)の換気を、前記液面(28)に対してほぼ平行に行なうことを特徴とする、請求項1から4のいずれか1つに記載の方法。
- 前記液浴容器(11)中で前記乾燥工程を実施するに先立って、前記液浴容器を繰返し満水にすることによって、洗浄工程を複数回実施することを特徴とする、請求項1から5のいずれか1つに記載の方法。
- 請求項1から6のいずれか1つに記載の、回路基板(13)、特に半導体基板を乾燥するための方法を実施するための装置であって、流入ユニット(16)および流出ユニット(17)を有し、そして、カバーユニット(20)を用いて閉塞可能な液浴容器(11)と、前記回路基板が、平面内で容器床面(14)の方向に延びるように、少なくとも1つの回路基板を受け入れるために、前記液浴容器内に配置された受入れシステム(12)と、前記受入れシステムの上方に配置された放熱器ユニット(22)とを備える装置。
- 前記放熱器ユニット(22)が、赤外線放熱器を備えることを特徴とする、請求項7に記載の装置。
- 前記放熱器ユニット(22)が、前記カバーユニット(20)上に配置されることを特徴とする、請求項7または8に記載の装置。
- 前記放熱器ユニット(22)が、容器内部から分離するための透明な板(25)の上方に配置されることを特徴とする、請求項7から9のいずれか1つに記載の装置。
- 前記液浴容器(11)が、前記カバーユニット(20)の領域内に、換気ユニット(27)を備えることを特徴とする、請求項7から10のいずれか1つに記載の装置。
- 前記換気ユニット(27)が、前記カバーユニット(20)上に配置されることを特徴とする、請求項11に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10361075A DE10361075A1 (de) | 2003-12-22 | 2003-12-22 | Verfahren und Vorichtung zur Trocknung von Schaltungssubstraten |
PCT/DE2004/002827 WO2005062358A1 (de) | 2003-12-22 | 2004-12-22 | Verfahren und vorrichtung zur trocknung von schaltungssubstraten |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007524232A true JP2007524232A (ja) | 2007-08-23 |
Family
ID=34706549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006529632A Pending JP2007524232A (ja) | 2003-12-22 | 2004-12-22 | 回路基板の乾燥方法および装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8256131B2 (ja) |
EP (1) | EP1697980B1 (ja) |
JP (1) | JP2007524232A (ja) |
KR (1) | KR20060127867A (ja) |
DE (2) | DE10361075A1 (ja) |
WO (1) | WO2005062358A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10361075A1 (de) * | 2003-12-22 | 2005-07-28 | Pac Tech - Packaging Technologies Gmbh | Verfahren und Vorichtung zur Trocknung von Schaltungssubstraten |
JP6849368B2 (ja) * | 2016-09-30 | 2021-03-24 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186127A (ja) * | 1995-12-28 | 1997-07-15 | Shiii & I:Kk | 半導体ウェハーの洗浄・乾燥方法および装置 |
JPH09283489A (ja) * | 1996-04-18 | 1997-10-31 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JPH10284459A (ja) * | 1997-04-02 | 1998-10-23 | Tokyo Electron Ltd | 洗浄・乾燥処理装置 |
JPH10321583A (ja) * | 1997-05-20 | 1998-12-04 | Kaijo Corp | 基板の乾燥方法 |
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2003
- 2003-12-22 DE DE10361075A patent/DE10361075A1/de not_active Ceased
-
2004
- 2004-12-22 EP EP04803007A patent/EP1697980B1/de active Active
- 2004-12-22 WO PCT/DE2004/002827 patent/WO2005062358A1/de active Application Filing
- 2004-12-22 JP JP2006529632A patent/JP2007524232A/ja active Pending
- 2004-12-22 DE DE502004009900T patent/DE502004009900D1/de active Active
- 2004-12-22 US US10/582,421 patent/US8256131B2/en active Active
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09186127A (ja) * | 1995-12-28 | 1997-07-15 | Shiii & I:Kk | 半導体ウェハーの洗浄・乾燥方法および装置 |
JPH11507121A (ja) * | 1996-04-04 | 1999-06-22 | ステアーグ ミクロテヒ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 基板を乾燥する方法及び装置 |
JPH09283489A (ja) * | 1996-04-18 | 1997-10-31 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JPH10284459A (ja) * | 1997-04-02 | 1998-10-23 | Tokyo Electron Ltd | 洗浄・乾燥処理装置 |
JPH10321583A (ja) * | 1997-05-20 | 1998-12-04 | Kaijo Corp | 基板の乾燥方法 |
JP2000183021A (ja) * | 1998-12-11 | 2000-06-30 | Toho Kasei Kk | 基板処理装置 |
JP2002134463A (ja) * | 2000-10-24 | 2002-05-10 | Dainippon Screen Mfg Co Ltd | 基板乾燥装置 |
JP2003303798A (ja) * | 2002-04-09 | 2003-10-24 | Sharp Corp | 半導体洗浄装置 |
Also Published As
Publication number | Publication date |
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US20080282574A1 (en) | 2008-11-20 |
EP1697980A1 (de) | 2006-09-06 |
DE10361075A1 (de) | 2005-07-28 |
US8256131B2 (en) | 2012-09-04 |
WO2005062358A1 (de) | 2005-07-07 |
KR20060127867A (ko) | 2006-12-13 |
DE502004009900D1 (de) | 2009-09-24 |
EP1697980B1 (de) | 2009-08-12 |
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