JP2007519244A5 - - Google Patents

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Publication number
JP2007519244A5
JP2007519244A5 JP2006549828A JP2006549828A JP2007519244A5 JP 2007519244 A5 JP2007519244 A5 JP 2007519244A5 JP 2006549828 A JP2006549828 A JP 2006549828A JP 2006549828 A JP2006549828 A JP 2006549828A JP 2007519244 A5 JP2007519244 A5 JP 2007519244A5
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JP
Japan
Prior art keywords
junction
beam path
contact
gain region
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006549828A
Other languages
English (en)
Japanese (ja)
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JP2007519244A (ja
Filing date
Publication date
Priority claimed from US10/763,508 external-priority patent/US7119373B2/en
Application filed filed Critical
Publication of JP2007519244A publication Critical patent/JP2007519244A/ja
Publication of JP2007519244A5 publication Critical patent/JP2007519244A5/ja
Pending legal-status Critical Current

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JP2006549828A 2004-01-23 2005-01-21 スーパールミネッセント発光ダイオード Pending JP2007519244A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/763,508 US7119373B2 (en) 2004-01-23 2004-01-23 Sled
PCT/CH2005/000031 WO2005071762A2 (en) 2004-01-23 2005-01-21 Superluminescent light emitting diode

Publications (2)

Publication Number Publication Date
JP2007519244A JP2007519244A (ja) 2007-07-12
JP2007519244A5 true JP2007519244A5 (https=) 2008-03-06

Family

ID=34795053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006549828A Pending JP2007519244A (ja) 2004-01-23 2005-01-21 スーパールミネッセント発光ダイオード

Country Status (4)

Country Link
US (1) US7119373B2 (https=)
EP (1) EP1706909A2 (https=)
JP (1) JP2007519244A (https=)
WO (1) WO2005071762A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7050222B2 (en) * 2003-05-23 2006-05-23 Covega, Inc. Methods and devices for high power, depolarized superluminescent diodes
US7485892B2 (en) * 2005-12-29 2009-02-03 Carl Zeiss Meditec Inc. Optical broadband emitters and methods of making the same
KR101568430B1 (ko) * 2007-05-01 2015-11-11 엑살로스 아게 광원 및 장치
US7600893B2 (en) * 2007-05-01 2009-10-13 Exalos Ag Display apparatus, method and light source
US8154127B1 (en) 2007-07-30 2012-04-10 Hewlett-Packard Development Company, L.P. Optical device and method of making the same
KR100953658B1 (ko) * 2008-06-05 2010-04-20 삼성모바일디스플레이주식회사 유기전계발광 표시장치
US8320621B2 (en) 2009-12-21 2012-11-27 Microsoft Corporation Depth projector system with integrated VCSEL array
US8670029B2 (en) 2010-06-16 2014-03-11 Microsoft Corporation Depth camera illuminator with superluminescent light-emitting diode
DE102011111604B4 (de) 2011-08-25 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
US10109762B2 (en) * 2012-09-28 2018-10-23 Canon Kabushiki Kaisha Light source and optical coherence tomography apparatus including the light source
CN103137818B (zh) * 2013-03-07 2016-03-30 天津三安光电有限公司 一种用于植物照明的led
US9397254B2 (en) * 2013-10-24 2016-07-19 Electronics And Telecommunications Research Institute Superluminescent diode and method for implementing the same
JP2015226048A (ja) * 2014-05-29 2015-12-14 株式会社トリマティス 広帯域光源
JP6679767B1 (ja) * 2019-01-07 2020-04-15 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及び半導体発光素子の製造方法
DE102019201699A1 (de) 2019-02-11 2019-04-04 Carl Zeiss Smt Gmbh Optischer Sensor für eine Projektionsbelichtungsanlage für die Halbleiterlithographie und Projektionsbelichtungsanlage

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236377A (ja) * 1987-03-25 1988-10-03 Fujitsu Ltd 端面放射型発光ダイオ−ド
US4764934A (en) 1987-07-27 1988-08-16 Ortel Corporation Superluminescent diode and single mode laser
JP2658398B2 (ja) * 1989-06-14 1997-09-30 松下電器産業株式会社 半導体発光素子
JP2695995B2 (ja) * 1991-01-14 1998-01-14 株式会社東芝 光半導体装置
US5252839A (en) * 1992-06-10 1993-10-12 Hewlett-Packard Company Superluminescent light-emitting diode with reverse biased absorber
US5606572A (en) * 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
JPH08162669A (ja) * 1994-12-06 1996-06-21 Nippondenso Co Ltd スーパールミネッセントダイオード
US6184542B1 (en) * 1998-06-16 2001-02-06 Princeton Lightwave Superluminescent diode and optical amplifier with extended bandwidth
JP2003332667A (ja) * 2002-05-13 2003-11-21 Sumitomo Electric Ind Ltd 半導体レーザモジュール
GB0215669D0 (en) * 2002-07-05 2002-08-14 Denselight Semiconductors Pte Superluminescent diode

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