JP2007519244A - スーパールミネッセント発光ダイオード - Google Patents
スーパールミネッセント発光ダイオード Download PDFInfo
- Publication number
- JP2007519244A JP2007519244A JP2006549828A JP2006549828A JP2007519244A JP 2007519244 A JP2007519244 A JP 2007519244A JP 2006549828 A JP2006549828 A JP 2006549828A JP 2006549828 A JP2006549828 A JP 2006549828A JP 2007519244 A JP2007519244 A JP 2007519244A
- Authority
- JP
- Japan
- Prior art keywords
- light
- beam path
- superluminescent
- emitting diode
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000002800 charge carrier Substances 0.000 claims abstract description 12
- 230000009471 action Effects 0.000 claims abstract description 5
- 238000005253 cladding Methods 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 7
- 230000005670 electromagnetic radiation Effects 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 5
- 239000002096 quantum dot Substances 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000006096 absorbing agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 238000004061 bleaching Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/042—Superluminescent diodes
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/763,508 US7119373B2 (en) | 2004-01-23 | 2004-01-23 | Sled |
| PCT/CH2005/000031 WO2005071762A2 (en) | 2004-01-23 | 2005-01-21 | Superluminescent light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007519244A true JP2007519244A (ja) | 2007-07-12 |
| JP2007519244A5 JP2007519244A5 (https=) | 2008-03-06 |
Family
ID=34795053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006549828A Pending JP2007519244A (ja) | 2004-01-23 | 2005-01-21 | スーパールミネッセント発光ダイオード |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7119373B2 (https=) |
| EP (1) | EP1706909A2 (https=) |
| JP (1) | JP2007519244A (https=) |
| WO (1) | WO2005071762A2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015226048A (ja) * | 2014-05-29 | 2015-12-14 | 株式会社トリマティス | 広帯域光源 |
| JP2020109817A (ja) * | 2019-01-07 | 2020-07-16 | Dowaエレクトロニクス株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7050222B2 (en) * | 2003-05-23 | 2006-05-23 | Covega, Inc. | Methods and devices for high power, depolarized superluminescent diodes |
| US7485892B2 (en) * | 2005-12-29 | 2009-02-03 | Carl Zeiss Meditec Inc. | Optical broadband emitters and methods of making the same |
| US7600893B2 (en) * | 2007-05-01 | 2009-10-13 | Exalos Ag | Display apparatus, method and light source |
| EP2143150B1 (en) * | 2007-05-01 | 2019-10-30 | Exalos AG | Light source, and device |
| US8154127B1 (en) | 2007-07-30 | 2012-04-10 | Hewlett-Packard Development Company, L.P. | Optical device and method of making the same |
| KR100953658B1 (ko) * | 2008-06-05 | 2010-04-20 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
| US8320621B2 (en) | 2009-12-21 | 2012-11-27 | Microsoft Corporation | Depth projector system with integrated VCSEL array |
| US8670029B2 (en) | 2010-06-16 | 2014-03-11 | Microsoft Corporation | Depth camera illuminator with superluminescent light-emitting diode |
| DE102011111604B4 (de) * | 2011-08-25 | 2023-01-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauelement |
| CN104662677B (zh) * | 2012-09-28 | 2018-09-04 | 佳能株式会社 | 光源和包括光源的光学相干层析成像装置 |
| CN103137818B (zh) * | 2013-03-07 | 2016-03-30 | 天津三安光电有限公司 | 一种用于植物照明的led |
| US9397254B2 (en) * | 2013-10-24 | 2016-07-19 | Electronics And Telecommunications Research Institute | Superluminescent diode and method for implementing the same |
| DE102019201699A1 (de) | 2019-02-11 | 2019-04-04 | Carl Zeiss Smt Gmbh | Optischer Sensor für eine Projektionsbelichtungsanlage für die Halbleiterlithographie und Projektionsbelichtungsanlage |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63236377A (ja) * | 1987-03-25 | 1988-10-03 | Fujitsu Ltd | 端面放射型発光ダイオ−ド |
| JPH0316280A (ja) * | 1989-06-14 | 1991-01-24 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
| JPH0653547A (ja) * | 1992-06-10 | 1994-02-25 | Hewlett Packard Co <Hp> | 超高輝度発光ダイオード |
| JPH08162669A (ja) * | 1994-12-06 | 1996-06-21 | Nippondenso Co Ltd | スーパールミネッセントダイオード |
| JP2003332667A (ja) * | 2002-05-13 | 2003-11-21 | Sumitomo Electric Ind Ltd | 半導体レーザモジュール |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4764934A (en) | 1987-07-27 | 1988-08-16 | Ortel Corporation | Superluminescent diode and single mode laser |
| JP2695995B2 (ja) * | 1991-01-14 | 1998-01-14 | 株式会社東芝 | 光半導体装置 |
| US5606572A (en) * | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
| US6184542B1 (en) * | 1998-06-16 | 2001-02-06 | Princeton Lightwave | Superluminescent diode and optical amplifier with extended bandwidth |
| GB0215669D0 (en) * | 2002-07-05 | 2002-08-14 | Denselight Semiconductors Pte | Superluminescent diode |
-
2004
- 2004-01-23 US US10/763,508 patent/US7119373B2/en not_active Expired - Lifetime
-
2005
- 2005-01-21 WO PCT/CH2005/000031 patent/WO2005071762A2/en not_active Ceased
- 2005-01-21 JP JP2006549828A patent/JP2007519244A/ja active Pending
- 2005-01-21 EP EP05700326A patent/EP1706909A2/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63236377A (ja) * | 1987-03-25 | 1988-10-03 | Fujitsu Ltd | 端面放射型発光ダイオ−ド |
| JPH0316280A (ja) * | 1989-06-14 | 1991-01-24 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
| JPH0653547A (ja) * | 1992-06-10 | 1994-02-25 | Hewlett Packard Co <Hp> | 超高輝度発光ダイオード |
| JPH08162669A (ja) * | 1994-12-06 | 1996-06-21 | Nippondenso Co Ltd | スーパールミネッセントダイオード |
| JP2003332667A (ja) * | 2002-05-13 | 2003-11-21 | Sumitomo Electric Ind Ltd | 半導体レーザモジュール |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015226048A (ja) * | 2014-05-29 | 2015-12-14 | 株式会社トリマティス | 広帯域光源 |
| JP2020109817A (ja) * | 2019-01-07 | 2020-07-16 | Dowaエレクトロニクス株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
| WO2020145025A1 (ja) * | 2019-01-07 | 2020-07-16 | Dowaエレクトロニクス株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
| CN113272974A (zh) * | 2019-01-07 | 2021-08-17 | 同和电子科技有限公司 | 半导体发光元件和半导体发光元件的制造方法 |
| US11888090B2 (en) | 2019-01-07 | 2024-01-30 | Dowa Electronics Materials Co., Ltd. | Semiconductor light-emitting element and method of producing semiconductor light-emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005071762A2 (en) | 2005-08-04 |
| US20050161685A1 (en) | 2005-07-28 |
| WO2005071762A3 (en) | 2006-02-02 |
| US7119373B2 (en) | 2006-10-10 |
| EP1706909A2 (en) | 2006-10-04 |
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