JP2007517320A5 - - Google Patents

Download PDF

Info

Publication number
JP2007517320A5
JP2007517320A5 JP2006547247A JP2006547247A JP2007517320A5 JP 2007517320 A5 JP2007517320 A5 JP 2007517320A5 JP 2006547247 A JP2006547247 A JP 2006547247A JP 2006547247 A JP2006547247 A JP 2006547247A JP 2007517320 A5 JP2007517320 A5 JP 2007517320A5
Authority
JP
Japan
Prior art keywords
data
units
array
interleaved
stored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006547247A
Other languages
English (en)
Other versions
JP5001011B2 (ja
JP2007517320A (ja
Filing date
Publication date
Priority claimed from US10/750,190 external-priority patent/US7631138B2/en
Application filed filed Critical
Publication of JP2007517320A publication Critical patent/JP2007517320A/ja
Publication of JP2007517320A5 publication Critical patent/JP2007517320A5/ja
Application granted granted Critical
Publication of JP5001011B2 publication Critical patent/JP5001011B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (12)

  1. 不揮発性メモリシステムにおいて、
    少なくとも２つのサブアレイに分割された不揮発性メモリセルのアレイであって、前記
    少なくとも２つのサブアレイの各々においてデータが同時にアクセス可能な不揮発性メモ
    リセルのアレイと、
    少なくとも第１および第２の異なるインタリーブ配列で前記少なくとも２つのサブアレ
    イ内に記憶されたデータと、
    を備える不揮発性メモリシステム。
  2. 前記少なくとも２つのサブアレイの各々において同時にアクセス可能な前記データは、
    データのセクタを含み、前記少なくとも２つのサブアレイ内に記憶されたデータのセクタ
    は、
    前記第１のインタリーブ配列に従って前記サブアレイを跨いでインタリーブされた第１
    の連続した論理アドレスのセットによって識別される少なくとも第１のデータセクタのセ
    ットと、
    前記第２のインタリーブ配列に従って前記少なくとも２つのサブアレイのうちの単一の
    サブアレイ内にインタリーブされた第２の連続した論理アドレスのセットによって識別さ
    れる少なくとも第２のデータセクタのセットと、
    を備える請求項１記載のメモリシステム。
  3. 記憶されたデータのセクタのインタリービングの度合いを示す表示も記憶される請求項
    ２記載のメモリシステム。
  4. 前記インタリービングの度合いを示す表示は、それらが関係する前記記憶されたデータ
    のセクタ内にオーバーヘッドとして記憶される請求項３記載のメモリシステム。
  5. 前記インタリービングの度合いを示す表示は、それらが関係する前記記憶されたデータ
    のセクタとは別のセクタに記憶される請求項３記載のメモリシステム。
  6. 複数単位のデータをプログラムするために、またデータを並列に読み出すために同時に
    アクセス可能な複数のメモリセルサブアレイを有する不揮発性メモリにおいて、個々のサ
    ブアレイが同時に消去可能なある最小数のメモリセルのブロックに分割され、前記メモリ
    を動作させる方法は、
    前記複数のサブアレイの各々における１ブロックの総データ記憶容量よりも小さく、か
    つ連続した論理アドレスを有する所定数の単位のデータを前記メモリ内へプログラムする
    コマンドを受信するステップと、
    プログラム対象の前記所定数の単位のデータを受信するステップと、
    前記サブアレイの各々における１ブロックの前記総データ記憶容量を基準としてプログ
    ラムされている前記所定数の単位のデータに合わせて前記複数のメモリセルサブアレイの
    うちの１つまたはそれ以上のサブアレイの複数ブロックにわたって順番に配列された連続
    した論理アドレスを有する前記受信された単位のデータをプログラムするステップと、
    を含む方法。
  7. 不揮発性メモリシステムを動作させる方法において、
    少なくとも第１の並列処理度および第２の並列処理度の各々でデータを書き込みおよび
    読み出しを実行して前記メモリを動作させるステップと、
    前記メモリシステムによって受信されたデータ書き込み要求を観察するステップと、
    前記受信された書き込み要求の個々の要求に添付されたデータを、前記受信された書き
    込み要求の少なくとも１つの特性に応じて、前記少なくとも第１および第２の並列処理度
    のうちの１つで書き込むステップと、
    を含む方法。
  8. 前記少なくとも１つの特性は、前記メモリ内に書き込まれるべき書き込み要求と共に受
    信されたある量のデータを含む請求項７記載の方法。
  9. 消去の単位としてブロック内に配列された不揮発性メモリセルのアレイ、その内部に配
    置されたデータのプログラミングおよび読み出しの単位としてのページ、および独立して
    アクセス可能な複数のブロックからなるプレーンを有するフラッシュメモリシステムにお
    ける動作方法は、
    複数の前記プレーンからのブロックを個々に含むメタブロックを論理的に形成するステ
    ップと、
    さまざまな量のデータを有する書き込みコマンドを連続して受信するステップと、
    前記書き込みコマンドのさまざまな特性に応じて、前記プレーンのうちの１つのプレー
    ンの個々のブロック内のページに並列または順次に、あるいは前記メタブロックのうちの
    １つのメタブロックの２つまたはそれ以上のブロック内のページに並列に、前記受信され
    たデータをさまざまに書き込むステップと、
    を含む方法。
  10. データが並列に書き込まれている前記ブロックを識別する表示を、前記受信されたデー
    タと同時に書き込むステップをさらに含む請求項９記載の方法。
  11. 共に消去可能でかつ複数のデータの単位を個々に記憶するセルのブロックに構成された
    メモリセルのアレイを有する不揮発性メモリシステムにおいて、書き込み対象の１つまた
    はそれ以上の単位のデータの論理アドレスを個々に指定し、かつ連続して受信されている
    前記指定された１つまたはそれ以上の単位のデータが添付されている一連の書き込みコマ
    ンドに応答する方法は、
    個々の書き込みコマンドの前記論理アドレスを、前記添付の１つまたはそれ以上の単位
    のデータを並列に書き込むことができる１つまたはそれ以上の前記ブロックのメモリセル
    内の物理アドレスに変換するステップであって、ある数の前記１つまたはそれ以上のブロ
    ックが、前記１つまたはそれ以上の単位のデータを受信するために、前記受信された一連
    の書き込みコマンドのうちの少なくとも１つによって指定されたデータの単位数の関数と
    して選択されるステップと、
    前記選択された１つまたはそれ以上の単位のデータを前記１つまたはそれ以上のブロッ
    クに並列に書き込むステップと、
    を含む方法。
  12. 不揮発性メモリのメモリセルのアレイを動作させる方法において、
    第１および第２の異なるインタリーブ配列でデータを記憶するステップと、
    前記第２のインタリーブ配列で記憶することによってより最適な性能特性がもたらされ
    ると考えられる前記第１のインタリーブ配列で記憶された前記データのうちの少なくとも
    一部を更新するコマンドの受信に応答して、前記第１のインタリーブ配列で記憶されたデ
    ータを読み出すステップと、
    前記読み出されたデータおよび前記更新されたデータを、前記第２のインタリーブ配列
    で前記メモリアレイに書き込むステップと、
    を含む方法。
JP2006547247A 2003-12-30 2004-12-16 ホストの使用特性に基づいたフラッシュメモリのアドレスマッピングの適応的モード切り換え Expired - Fee Related JP5001011B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/750,190 2003-12-30
US10/750,190 US7631138B2 (en) 2003-12-30 2003-12-30 Adaptive mode switching of flash memory address mapping based on host usage characteristics
PCT/US2004/042862 WO2005066794A2 (en) 2003-12-30 2004-12-16 Adaptive mode switching of flash memory address mapping based on host usage characteristics

Publications (3)

Publication Number Publication Date
JP2007517320A JP2007517320A (ja) 2007-06-28
JP2007517320A5 true JP2007517320A5 (ja) 2008-02-14
JP5001011B2 JP5001011B2 (ja) 2012-08-15

Family

ID=34701169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006547247A Expired - Fee Related JP5001011B2 (ja) 2003-12-30 2004-12-16 ホストの使用特性に基づいたフラッシュメモリのアドレスマッピングの適応的モード切り換え

Country Status (8)

Country Link
US (2) US7631138B2 (ja)
EP (1) EP1700221B1 (ja)
JP (1) JP5001011B2 (ja)
KR (1) KR101014599B1 (ja)
CN (1) CN1918552B (ja)
AT (1) ATE554448T1 (ja)
TW (1) TWI303365B (ja)
WO (1) WO2005066794A2 (ja)

Families Citing this family (273)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI240861B (en) * 2002-01-11 2005-10-01 Integrated Circuit Solution In Data access method and architecture of flash memory
US8504798B2 (en) 2003-12-30 2013-08-06 Sandisk Technologies Inc. Management of non-volatile memory systems having large erase blocks
US7631138B2 (en) * 2003-12-30 2009-12-08 Sandisk Corporation Adaptive mode switching of flash memory address mapping based on host usage characteristics
US8607016B2 (en) * 2004-07-21 2013-12-10 Sandisk Technologies Inc. FAT analysis for optimized sequential cluster management
JP4561246B2 (ja) * 2004-08-31 2010-10-13 ソニー株式会社 メモリ装置
US7627712B2 (en) * 2005-03-22 2009-12-01 Sigmatel, Inc. Method and system for managing multi-plane memory devices
US20060282610A1 (en) * 2005-06-08 2006-12-14 M-Systems Flash Disk Pioneers Ltd. Flash memory with programmable endurance
US7426605B2 (en) * 2005-09-30 2008-09-16 Rudelic John C Method and apparatus for optimizing flash device erase distribution
US7640424B2 (en) * 2005-10-13 2009-12-29 Sandisk Corporation Initialization of flash storage via an embedded controller
US7793059B2 (en) * 2006-01-18 2010-09-07 Apple Inc. Interleaving policies for flash memory
KR100725410B1 (ko) * 2006-01-20 2007-06-07 삼성전자주식회사 전원 상태에 따라 비휘발성 메모리의 블록 회수를 수행하는장치 및 그 방법
CN102063931B (zh) * 2006-03-31 2014-07-30 莫塞德技术公司 闪烁存储器系统控制方案
CN103280239B (zh) 2006-05-12 2016-04-06 苹果公司 存储设备中的失真估计和消除
US8239735B2 (en) 2006-05-12 2012-08-07 Apple Inc. Memory Device with adaptive capacity
US8595573B2 (en) 2006-12-03 2013-11-26 Apple Inc. Automatic defect management in memory devices
US8706968B2 (en) 2007-12-06 2014-04-22 Fusion-Io, Inc. Apparatus, system, and method for redundant write caching
US9104599B2 (en) 2007-12-06 2015-08-11 Intelligent Intellectual Property Holdings 2 Llc Apparatus, system, and method for destaging cached data
US9116823B2 (en) 2006-12-06 2015-08-25 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for adaptive error-correction coding
US8443134B2 (en) 2006-12-06 2013-05-14 Fusion-Io, Inc. Apparatus, system, and method for graceful cache device degradation
US9495241B2 (en) 2006-12-06 2016-11-15 Longitude Enterprise Flash S.A.R.L. Systems and methods for adaptive data storage
CN101681282A (zh) 2006-12-06 2010-03-24 弗森多系统公司（dba弗森-艾奥） 用于共享的、前端、分布式raid的装置、系统和方法
US8489817B2 (en) 2007-12-06 2013-07-16 Fusion-Io, Inc. Apparatus, system, and method for caching data
US8074011B2 (en) * 2006-12-06 2011-12-06 Fusion-Io, Inc. Apparatus, system, and method for storage space recovery after reaching a read count limit
KR100843218B1 (ko) * 2006-12-18 2008-07-02 삼성전자주식회사 어드레스 쉬프팅을 이용하여 블럭 사이즈를 변경하는플래시 메모리 장치 및 방법
US20080162612A1 (en) * 2006-12-28 2008-07-03 Andrew Tomlin Method for block relinking
WO2008082950A1 (en) * 2006-12-28 2008-07-10 Sandisk Corporation System for block relinking
TW200828320A (en) * 2006-12-28 2008-07-01 Genesys Logic Inc Method for performing static wear leveling on flash memory
US20080162787A1 (en) * 2006-12-28 2008-07-03 Andrew Tomlin System for block relinking
US8019959B2 (en) * 2007-02-09 2011-09-13 Marvell World Trade Ltd. Nonvolatile memory system
CN101715595A (zh) 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
US7958301B2 (en) * 2007-04-10 2011-06-07 Marvell World Trade Ltd. Memory controller and method for memory pages with dynamically configurable bits per cell
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
US8429352B2 (en) * 2007-06-08 2013-04-23 Sandisk Technologies Inc. Method and system for memory block flushing
CN100530138C (zh) * 2007-06-28 2009-08-19 忆正存储技术(深圳)有限公司 基于多通道闪存设备逻辑条带的自适应控制方法
US8572307B2 (en) * 2007-07-20 2013-10-29 Panasonic Corporation Memory controller, memory card, and nonvolatile memory system
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8300478B2 (en) 2007-09-19 2012-10-30 Apple Inc. Reducing distortion using joint storage
US8566504B2 (en) * 2007-09-28 2013-10-22 Sandisk Technologies Inc. Dynamic metablocks
US8527819B2 (en) 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
KR101509836B1 (ko) 2007-11-13 2015-04-06 애플 인크. 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택
US8225181B2 (en) * 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
CN101178933B (zh) * 2007-12-05 2010-07-28 苏州壹世通科技有限公司 一种闪存阵列装置
US8195912B2 (en) * 2007-12-06 2012-06-05 Fusion-io, Inc Apparatus, system, and method for efficient mapping of virtual and physical addresses
US7836226B2 (en) 2007-12-06 2010-11-16 Fusion-Io, Inc. Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment
US8316277B2 (en) 2007-12-06 2012-11-20 Fusion-Io, Inc. Apparatus, system, and method for ensuring data validity in a data storage process
US9519540B2 (en) 2007-12-06 2016-12-13 Sandisk Technologies Llc Apparatus, system, and method for destaging cached data
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) * 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8245101B2 (en) 2007-12-27 2012-08-14 Sandisk Enterprise Ip Llc Patrol function used in flash storage controller to detect data errors
KR101465789B1 (ko) * 2008-01-24 2014-11-26 삼성전자주식회사 페이지 복사 횟수를 줄일 수 있는 메모리 카드 시스템의쓰기 및 병합 방법
JP2009211192A (ja) * 2008-02-29 2009-09-17 Toshiba Corp メモリシステム
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8493783B2 (en) 2008-03-18 2013-07-23 Apple Inc. Memory device readout using multiple sense times
US9477587B2 (en) 2008-04-11 2016-10-25 Micron Technology, Inc. Method and apparatus for a volume management system in a non-volatile memory device
US20090271562A1 (en) * 2008-04-25 2009-10-29 Sinclair Alan W Method and system for storage address re-mapping for a multi-bank memory device
WO2009140700A1 (en) 2008-05-16 2009-11-19 Fusion Multisystems, Inc. Apparatus, system, and method for detecting and replacing failed data storage
KR100982440B1 (ko) 2008-06-12 2010-09-15 (주)명정보기술 단일 플래시 메모리의 데이터 관리시스템
KR20100012938A (ko) * 2008-07-30 2010-02-09 주식회사 하이닉스반도체 웨어 레벨링을 수행하는 반도체 스토리지 시스템 및 그제어 방법
US8904083B2 (en) * 2008-07-30 2014-12-02 Infineon Technologies Ag Method and apparatus for storing data in solid state memory
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
TWI373769B (en) * 2008-08-15 2012-10-01 Phison Electronics Corp Block management method for flash memory and storage system and controller using the same
TW201009577A (en) * 2008-08-27 2010-03-01 Phison Electronics Corp Data transfer method for flash memory and flash memory storage system and controller using the same
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
JP5360214B2 (ja) * 2008-09-03 2013-12-04 マーベル ワールド トレード リミテッド マルチプレーン型フラッシュメモリへのデータのプログラミング方法、これを用いたデバイスおよびシステム
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
EP2335245B1 (en) * 2008-09-28 2015-01-07 Ramot at Tel-Aviv University Ltd. Method and system for adaptive coding in flash memories
US8671327B2 (en) * 2008-09-28 2014-03-11 Sandisk Technologies Inc. Method and system for adaptive coding in flash memories
KR101083673B1 (ko) * 2008-10-01 2011-11-16 주식회사 하이닉스반도체 반도체 스토리지 시스템 및 그 제어 방법
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
TW201017771A (en) * 2008-10-29 2010-05-01 Nanya Technology Corp Vertical transistor and fabricating method thereof and vertical transistor array
US8713330B1 (en) 2008-10-30 2014-04-29 Apple Inc. Data scrambling in memory devices
JP2010108385A (ja) * 2008-10-31 2010-05-13 Hitachi Ulsi Systems Co Ltd 記憶装置
US8219781B2 (en) 2008-11-06 2012-07-10 Silicon Motion Inc. Method for managing a memory apparatus, and associated memory apparatus thereof
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
KR101515098B1 (ko) * 2008-11-20 2015-04-24 삼성전자주식회사 플래시 메모리 장치 및 이의 독출 방법
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) * 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8239614B2 (en) * 2009-03-04 2012-08-07 Micron Technology, Inc. Memory super block allocation
TWI407441B (zh) * 2009-03-20 2013-09-01 Phison Electronics Corp 快閃記憶體寫入方法及使用此方法的儲存系統與控制器
TWI385518B (zh) * 2009-03-20 2013-02-11 Phison Electronics Corp 用於快閃記憶體的資料儲存方法及儲存系統
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
JP5532671B2 (ja) * 2009-05-08 2014-06-25 ソニー株式会社 データ記憶システムおよびデータ記憶方法、実行装置および制御方法、並びに制御装置および制御方法
KR101606453B1 (ko) * 2009-05-13 2016-04-01 삼성전자주식회사 비휘발성 데이터 저장 장치의 읽기 및 쓰기 성능 향상 방법
US8281227B2 (en) 2009-05-18 2012-10-02 Fusion-10, Inc. Apparatus, system, and method to increase data integrity in a redundant storage system
US8307258B2 (en) 2009-05-18 2012-11-06 Fusion-10, Inc Apparatus, system, and method for reconfiguring an array to operate with less storage elements
JP4818404B2 (ja) * 2009-06-26 2011-11-16 株式会社東芝 素材サーバおよび素材蓄積方法
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
KR101581857B1 (ko) * 2009-08-06 2015-12-31 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 인터리브 유닛 구성 방법
KR20110018157A (ko) * 2009-08-17 2011-02-23 삼성전자주식회사 플래시 메모리 장치의 액세스 방법
JP4956593B2 (ja) 2009-09-08 2012-06-20 株式会社東芝 メモリシステム
WO2011031796A2 (en) 2009-09-08 2011-03-17 Fusion-Io, Inc. Apparatus, system, and method for caching data on a solid-state storage device
US8289801B2 (en) 2009-09-09 2012-10-16 Fusion-Io, Inc. Apparatus, system, and method for power reduction management in a storage device
US9223514B2 (en) 2009-09-09 2015-12-29 SanDisk Technologies, Inc. Erase suspend/resume for memory
US8972627B2 (en) 2009-09-09 2015-03-03 Fusion-Io, Inc. Apparatus, system, and method for managing operations for data storage media
US9021158B2 (en) 2009-09-09 2015-04-28 SanDisk Technologies, Inc. Program suspend/resume for memory
CN101692211B (zh) * 2009-09-15 2011-08-10 苏州超锐微电子有限公司 一种Flash数据管理方法
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8473669B2 (en) * 2009-12-07 2013-06-25 Sandisk Technologies Inc. Method and system for concurrent background and foreground operations in a non-volatile memory array
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8677203B1 (en) 2010-01-11 2014-03-18 Apple Inc. Redundant data storage schemes for multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
JP5464066B2 (ja) * 2010-06-10 2014-04-09 ソニー株式会社 通信装置、及び、通信方法
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8447920B1 (en) * 2010-06-29 2013-05-21 Western Digital Technologies, Inc. System and method for managing data access in non-volatile memory
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
WO2012006957A1 (zh) 2010-07-14 2012-01-19 Zhao Dongjing 无线开关组件、中继转发控制系统及存储卡
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8493781B1 (en) 2010-08-12 2013-07-23 Apple Inc. Interference mitigation using individual word line erasure operations
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US8984216B2 (en) 2010-09-09 2015-03-17 Fusion-Io, Llc Apparatus, system, and method for managing lifetime of a storage device
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US8452911B2 (en) 2010-09-30 2013-05-28 Sandisk Technologies Inc. Synchronized maintenance operations in a multi-bank storage system
WO2012048444A1 (en) 2010-10-14 2012-04-19 Freescale Semiconductor, Inc. Are Memory controller and method for accessing a plurality of non-volatile memory arrays
JP5296763B2 (ja) * 2010-11-11 2013-09-25 株式会社バッファロー 記憶装置、記憶プログラム及び制御方法
US8850100B2 (en) * 2010-12-07 2014-09-30 Densbits Technologies Ltd. Interleaving codeword portions between multiple planes and/or dies of a flash memory device
US9218278B2 (en) 2010-12-13 2015-12-22 SanDisk Technologies, Inc. Auto-commit memory
US10817502B2 (en) 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent memory management
US10817421B2 (en) 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent data structures
US9047178B2 (en) 2010-12-13 2015-06-02 SanDisk Technologies, Inc. Auto-commit memory synchronization
US9208071B2 (en) 2010-12-13 2015-12-08 SanDisk Technologies, Inc. Apparatus, system, and method for accessing memory
WO2012082792A2 (en) 2010-12-13 2012-06-21 Fusion-Io, Inc. Apparatus, system, and method for auto-commit memory
TWI514136B (zh) 2010-12-28 2015-12-21 Silicon Motion Inc 快閃記憶裝置及其資料寫入方法
CN102541464B (zh) * 2010-12-30 2014-07-23 慧荣科技股份有限公司 快闪存储装置及其数据写入方法
US9213594B2 (en) 2011-01-19 2015-12-15 Intelligent Intellectual Property Holdings 2 Llc Apparatus, system, and method for managing out-of-service conditions
WO2012106362A2 (en) 2011-01-31 2012-08-09 Fusion-Io, Inc. Apparatus, system, and method for managing eviction of data
TWI494948B (zh) * 2011-01-31 2015-08-01 Phison Electronics Corp 用於非揮發性記憶體的資料寫入方法、控制器與儲存裝置
US9003104B2 (en) 2011-02-15 2015-04-07 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for a file-level cache
US9201677B2 (en) 2011-05-23 2015-12-01 Intelligent Intellectual Property Holdings 2 Llc Managing data input/output operations
US8874823B2 (en) 2011-02-15 2014-10-28 Intellectual Property Holdings 2 Llc Systems and methods for managing data input/output operations
CN102646448B (zh) * 2011-02-18 2015-09-16 群联电子股份有限公司 用于非易失性内存的数据写入方法、控制器与储存装置
US9141527B2 (en) 2011-02-25 2015-09-22 Intelligent Intellectual Property Holdings 2 Llc Managing cache pools
KR101339800B1 (ko) * 2011-02-25 2013-12-10 성균관대학교산학협력단 Ｐｓｓ 행위 모델링 장치 및 방법
US9176864B2 (en) * 2011-05-17 2015-11-03 SanDisk Technologies, Inc. Non-volatile memory and method having block management with hot/cold data sorting
US9141528B2 (en) 2011-05-17 2015-09-22 Sandisk Technologies Inc. Tracking and handling of super-hot data in non-volatile memory systems
TWI479491B (zh) * 2011-07-05 2015-04-01 Phison Electronics Corp 記憶體控制方法、記憶體控制器與記憶體儲存裝置
US9477590B2 (en) 2011-09-16 2016-10-25 Apple Inc. Weave sequence counter for non-volatile memory systems
TWI454911B (zh) * 2011-10-12 2014-10-01 Phison Electronics Corp 資料寫入方法、記憶體控制器與記憶體儲存裝置
CN103077124B (zh) * 2011-10-25 2015-11-18 群联电子股份有限公司 数据写入方法、存储器控制器与存储器储存装置
JP5860543B2 (ja) 2011-10-26 2016-02-16 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． ブートデータのロード
KR20130046122A (ko) * 2011-10-27 2013-05-07 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
US9164676B2 (en) * 2011-11-30 2015-10-20 International Business Machines Corporation Storing multi-stream non-linear access patterns in a flash based file-system
US8762627B2 (en) 2011-12-21 2014-06-24 Sandisk Technologies Inc. Memory logical defragmentation during garbage collection
KR101942272B1 (ko) * 2011-12-27 2019-01-28 삼성전자주식회사 비휘발성 메모리의 제어방법, 이를 구현한 비휘발성 메모리 컨트롤러 및 이를 포함하는 메모리 시스템
US9329989B2 (en) * 2011-12-30 2016-05-03 SanDisk Technologies, Inc. System and method for pre-interleaving sequential data
US9767032B2 (en) 2012-01-12 2017-09-19 Sandisk Technologies Llc Systems and methods for cache endurance
US8782344B2 (en) 2012-01-12 2014-07-15 Fusion-Io, Inc. Systems and methods for managing cache admission
US10102117B2 (en) 2012-01-12 2018-10-16 Sandisk Technologies Llc Systems and methods for cache and storage device coordination
US9251052B2 (en) 2012-01-12 2016-02-02 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for profiling a non-volatile cache having a logical-to-physical translation layer
US9251086B2 (en) 2012-01-24 2016-02-02 SanDisk Technologies, Inc. Apparatus, system, and method for managing a cache
US9116812B2 (en) 2012-01-27 2015-08-25 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for a de-duplication cache
US10019353B2 (en) 2012-03-02 2018-07-10 Longitude Enterprise Flash S.A.R.L. Systems and methods for referencing data on a storage medium
KR101969883B1 (ko) 2012-04-13 2019-04-17 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US8898376B2 (en) 2012-06-04 2014-11-25 Fusion-Io, Inc. Apparatus, system, and method for grouping data stored on an array of solid-state storage elements
US9612966B2 (en) 2012-07-03 2017-04-04 Sandisk Technologies Llc Systems, methods and apparatus for a virtual machine cache
US10339056B2 (en) 2012-07-03 2019-07-02 Sandisk Technologies Llc Systems, methods and apparatus for cache transfers
US9699263B1 (en) 2012-08-17 2017-07-04 Sandisk Technologies Llc. Automatic read and write acceleration of data accessed by virtual machines
US10346095B2 (en) 2012-08-31 2019-07-09 Sandisk Technologies, Llc Systems, methods, and interfaces for adaptive cache persistence
WO2014047182A2 (en) * 2012-09-21 2014-03-27 Nyse Group, Inc. High performance data streaming
KR20140080216A (ko) 2012-12-20 2014-06-30 에스케이하이닉스 주식회사 반도체 메모리 시스템 및 그의 동작 방법
US9612948B2 (en) 2012-12-27 2017-04-04 Sandisk Technologies Llc Reads and writes between a contiguous data block and noncontiguous sets of logical address blocks in a persistent storage device
US9454420B1 (en) 2012-12-31 2016-09-27 Sandisk Technologies Llc Method and system of reading threshold voltage equalization
US9336133B2 (en) 2012-12-31 2016-05-10 Sandisk Technologies Inc. Method and system for managing program cycles including maintenance programming operations in a multi-layer memory
US9223693B2 (en) 2012-12-31 2015-12-29 Sandisk Technologies Inc. Memory system having an unequal number of memory die on different control channels
US9734911B2 (en) 2012-12-31 2017-08-15 Sandisk Technologies Llc Method and system for asynchronous die operations in a non-volatile memory
US8873284B2 (en) 2012-12-31 2014-10-28 Sandisk Technologies Inc. Method and system for program scheduling in a multi-layer memory
US9465731B2 (en) 2012-12-31 2016-10-11 Sandisk Technologies Llc Multi-layer non-volatile memory system having multiple partitions in a layer
US9734050B2 (en) 2012-12-31 2017-08-15 Sandisk Technologies Llc Method and system for managing background operations in a multi-layer memory
US9348746B2 (en) 2012-12-31 2016-05-24 Sandisk Technologies Method and system for managing block reclaim operations in a multi-layer memory
US9652376B2 (en) 2013-01-28 2017-05-16 Radian Memory Systems, Inc. Cooperative flash memory control
US11249652B1 (en) 2013-01-28 2022-02-15 Radian Memory Systems, Inc. Maintenance of nonvolatile memory on host selected namespaces by a common memory controller
US10445229B1 (en) * 2013-01-28 2019-10-15 Radian Memory Systems, Inc. Memory controller with at least one address segment defined for which data is striped across flash memory dies, with a common address offset being used to obtain physical addresses for the data in each of the dies
US9870830B1 (en) 2013-03-14 2018-01-16 Sandisk Technologies Llc Optimal multilevel sensing for reading data from a storage medium
US9465732B2 (en) 2013-03-15 2016-10-11 Sandisk Technologies Llc Binning of blocks for dynamic linking
US9842053B2 (en) 2013-03-15 2017-12-12 Sandisk Technologies Llc Systems and methods for persistent cache logging
US20140297921A1 (en) * 2013-03-26 2014-10-02 Skymedi Corporation Method of Partitioning Physical Block and Memory System Thereof
US9524235B1 (en) 2013-07-25 2016-12-20 Sandisk Technologies Llc Local hash value generation in non-volatile data storage systems
US9639463B1 (en) 2013-08-26 2017-05-02 Sandisk Technologies Llc Heuristic aware garbage collection scheme in storage systems
US9478249B2 (en) * 2013-08-30 2016-10-25 Seagate Technology Llc Cache data management for program execution
US9202533B2 (en) * 2013-10-09 2015-12-01 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device changing the number of selected bits and/or the number of selected bays at data write operation
US10019352B2 (en) 2013-10-18 2018-07-10 Sandisk Technologies Llc Systems and methods for adaptive reserve storage
US9442662B2 (en) 2013-10-18 2016-09-13 Sandisk Technologies Llc Device and method for managing die groups
US9436831B2 (en) 2013-10-30 2016-09-06 Sandisk Technologies Llc Secure erase in a memory device
US9703816B2 (en) 2013-11-19 2017-07-11 Sandisk Technologies Llc Method and system for forward reference logging in a persistent datastore
US9520197B2 (en) 2013-11-22 2016-12-13 Sandisk Technologies Llc Adaptive erase of a storage device
US9520162B2 (en) 2013-11-27 2016-12-13 Sandisk Technologies Llc DIMM device controller supervisor
US9582058B2 (en) 2013-11-29 2017-02-28 Sandisk Technologies Llc Power inrush management of storage devices
US10152408B2 (en) 2014-02-19 2018-12-11 Rambus Inc. Memory system with activate-leveling method
US9666244B2 (en) 2014-03-01 2017-05-30 Fusion-Io, Inc. Dividing a storage procedure
US9703636B2 (en) 2014-03-01 2017-07-11 Sandisk Technologies Llc Firmware reversion trigger and control
KR102225989B1 (ko) 2014-03-04 2021-03-10 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 동작 방법
US9678797B2 (en) 2014-03-10 2017-06-13 Microsoft Technology Licensing, Llc Dynamic resource management for multi-process applications
US9454448B2 (en) 2014-03-19 2016-09-27 Sandisk Technologies Llc Fault testing in storage devices
US9448876B2 (en) 2014-03-19 2016-09-20 Sandisk Technologies Llc Fault detection and prediction in storage devices
US9626399B2 (en) 2014-03-31 2017-04-18 Sandisk Technologies Llc Conditional updates for reducing frequency of data modification operations
US9626400B2 (en) 2014-03-31 2017-04-18 Sandisk Technologies Llc Compaction of information in tiered data structure
US9697267B2 (en) 2014-04-03 2017-07-04 Sandisk Technologies Llc Methods and systems for performing efficient snapshots in tiered data structures
US9582205B2 (en) * 2014-04-17 2017-02-28 Sandisk Technologies Llc Protection scheme with dual programming of a memory system
US10656840B2 (en) 2014-05-30 2020-05-19 Sandisk Technologies Llc Real-time I/O pattern recognition to enhance performance and endurance of a storage device
US10656842B2 (en) 2014-05-30 2020-05-19 Sandisk Technologies Llc Using history of I/O sizes and I/O sequences to trigger coalesced writes in a non-volatile storage device
US10162748B2 (en) 2014-05-30 2018-12-25 Sandisk Technologies Llc Prioritizing garbage collection and block allocation based on I/O history for logical address regions
US10146448B2 (en) 2014-05-30 2018-12-04 Sandisk Technologies Llc Using history of I/O sequences to trigger cached read ahead in a non-volatile storage device
US10114557B2 (en) 2014-05-30 2018-10-30 Sandisk Technologies Llc Identification of hot regions to enhance performance and endurance of a non-volatile storage device
US9703491B2 (en) 2014-05-30 2017-07-11 Sandisk Technologies Llc Using history of unaligned writes to cache data and avoid read-modify-writes in a non-volatile storage device
US10372613B2 (en) 2014-05-30 2019-08-06 Sandisk Technologies Llc Using sub-region I/O history to cache repeatedly accessed sub-regions in a non-volatile storage device
US9652381B2 (en) 2014-06-19 2017-05-16 Sandisk Technologies Llc Sub-block garbage collection
US9652415B2 (en) 2014-07-09 2017-05-16 Sandisk Technologies Llc Atomic non-volatile memory data transfer
US9904621B2 (en) 2014-07-15 2018-02-27 Sandisk Technologies Llc Methods and systems for flash buffer sizing
US9645744B2 (en) 2014-07-22 2017-05-09 Sandisk Technologies Llc Suspending and resuming non-volatile memory operations
US9443601B2 (en) 2014-09-08 2016-09-13 Sandisk Technologies Llc Holdup capacitor energy harvesting
US9952978B2 (en) 2014-10-27 2018-04-24 Sandisk Technologies, Llc Method for improving mixed random performance in low queue depth workloads
US9753649B2 (en) 2014-10-27 2017-09-05 Sandisk Technologies Llc Tracking intermix of writes and un-map commands across power cycles
US9817752B2 (en) 2014-11-21 2017-11-14 Sandisk Technologies Llc Data integrity enhancement to protect against returning old versions of data
US9824007B2 (en) 2014-11-21 2017-11-21 Sandisk Technologies Llc Data integrity enhancement to protect against returning old versions of data
US9933950B2 (en) 2015-01-16 2018-04-03 Sandisk Technologies Llc Storage operation interrupt
US9772796B2 (en) 2015-04-09 2017-09-26 Sandisk Technologies Llc Multi-package segmented data transfer protocol for sending sub-request to multiple memory portions of solid-state drive using a single relative memory address
US10372529B2 (en) 2015-04-20 2019-08-06 Sandisk Technologies Llc Iterative soft information correction and decoding
US9778878B2 (en) * 2015-04-22 2017-10-03 Sandisk Technologies Llc Method and system for limiting write command execution
US10009438B2 (en) 2015-05-20 2018-06-26 Sandisk Technologies Llc Transaction log acceleration
US9870149B2 (en) 2015-07-08 2018-01-16 Sandisk Technologies Llc Scheduling operations in non-volatile memory devices using preference values
US9626312B2 (en) 2015-07-17 2017-04-18 Sandisk Technologies Llc Storage region mapping for a data storage device
US9889932B2 (en) 2015-07-18 2018-02-13 Tata Consultancy Services Limited Methods and systems for landing of unmanned aerial vehicle
US9715939B2 (en) 2015-08-10 2017-07-25 Sandisk Technologies Llc Low read data storage management
US9875049B2 (en) * 2015-08-24 2018-01-23 Sandisk Technologies Llc Memory system and method for reducing peak current consumption
US10133490B2 (en) 2015-10-30 2018-11-20 Sandisk Technologies Llc System and method for managing extended maintenance scheduling in a non-volatile memory
US10120613B2 (en) 2015-10-30 2018-11-06 Sandisk Technologies Llc System and method for rescheduling host and maintenance operations in a non-volatile memory
US9778855B2 (en) 2015-10-30 2017-10-03 Sandisk Technologies Llc System and method for precision interleaving of data writes in a non-volatile memory
US10042553B2 (en) 2015-10-30 2018-08-07 Sandisk Technologies Llc Method and system for programming a multi-layer non-volatile memory having a single fold data path
US10228990B2 (en) 2015-11-12 2019-03-12 Sandisk Technologies Llc Variable-term error metrics adjustment
US10126970B2 (en) 2015-12-11 2018-11-13 Sandisk Technologies Llc Paired metablocks in non-volatile storage device
US9837146B2 (en) 2016-01-08 2017-12-05 Sandisk Technologies Llc Memory system temperature management
US10732856B2 (en) 2016-03-03 2020-08-04 Sandisk Technologies Llc Erase health metric to rank memory portions
US10019198B2 (en) 2016-04-01 2018-07-10 Intel Corporation Method and apparatus for processing sequential writes to portions of an addressable unit
US10031845B2 (en) * 2016-04-01 2018-07-24 Intel Corporation Method and apparatus for processing sequential writes to a block group of physical blocks in a memory device
KR102651425B1 (ko) * 2016-06-30 2024-03-28 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
US10481830B2 (en) 2016-07-25 2019-11-19 Sandisk Technologies Llc Selectively throttling host reads for read disturbs in non-volatile memory system
KR102620562B1 (ko) 2016-08-04 2024-01-03 삼성전자주식회사 비휘발성 메모리 장치
US11017838B2 (en) 2016-08-04 2021-05-25 Samsung Electronics Co., Ltd. Nonvolatile memory devices
CN107818118B (zh) * 2016-09-14 2019-04-30 北京百度网讯科技有限公司 数据存储方法和装置
CN107273304A (zh) * 2017-05-24 2017-10-20 记忆科技(深圳)有限公司 一种提高固态硬盘顺序读性能的方法及固态硬盘
US10497447B2 (en) * 2017-06-29 2019-12-03 SK Hynix Inc. Memory device capable of supporting multiple read operations
TWI645288B (zh) * 2017-07-04 2018-12-21 慧榮科技股份有限公司 資料儲存裝置以及其操作方法
KR20190006680A (ko) * 2017-07-11 2019-01-21 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US10261914B2 (en) 2017-08-25 2019-04-16 Micron Technology, Inc. Methods of memory address verification and memory devices employing the same
US11086790B2 (en) 2017-08-25 2021-08-10 Micron Technology, Inc. Methods of memory address verification and memory devices employing the same
KR20190031683A (ko) * 2017-09-18 2019-03-27 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
US10908832B2 (en) * 2017-10-31 2021-02-02 Micron Technology, Inc. Common pool management
US11289137B2 (en) * 2017-11-16 2022-03-29 Micron Technology, Inc. Multi-port storage-class memory interface
US11436154B2 (en) 2017-12-01 2022-09-06 Micron Technology, Inc. Logical block mapping based on an offset
US10977182B2 (en) * 2017-12-01 2021-04-13 Micron Technology, Inc. Logical block mapping based on an offset
JP2020047348A (ja) * 2018-09-19 2020-03-26 キオクシア株式会社 半導体記憶装置及びその制御方法
KR101995034B1 (ko) * 2019-02-26 2019-07-02 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
KR20200106682A (ko) * 2019-03-05 2020-09-15 에스케이하이닉스 주식회사 데이터 처리 시스템 및 그것의 동작방법
US20210055878A1 (en) * 2019-08-20 2021-02-25 Micron Technology, Inc. Data compaction within the same plane of a memory component
US11221950B2 (en) * 2019-12-19 2022-01-11 Western Digital Technologies, Inc. Storage system and method for interleaving data for enhanced quality of service
US11150839B2 (en) 2019-12-19 2021-10-19 Western Digital Technologies, Inc. Host and method for interleaving data in a storage system for enhanced quality of service
US11157416B2 (en) * 2020-02-27 2021-10-26 Micron Technology, Inc. Firmware loading for a memory controller
US11379117B2 (en) 2020-06-19 2022-07-05 Western Digital Technologies, Inc. Storage system and method for using host-assisted variable zone speed grade modes to minimize overprovisioning
US11456050B2 (en) * 2021-02-24 2022-09-27 Western Digital Technologies, Inc. Relinking scheme in sub-block mode
US11681471B2 (en) * 2021-04-07 2023-06-20 EMC IP Holding Company LLC Bypassing of tier-1 storage in a streaming data storage system
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
CN113420083B (zh) * 2021-06-02 2024-03-19 湖南大学 一种具有可拓展分布式账本的异构并行区块链结构的系统
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
US11842062B2 (en) 2022-02-09 2023-12-12 Western Digital Technologies, Inc. Method of handling irregular MetaBlock wear leveling and UGSD boot time improvement

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
IL96808A (en) * 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
JP2618149B2 (ja) 1991-04-22 1997-06-11 インターナショナル・ビジネス・マシーンズ・コーポレイション キャッシュ内のデータ記憶スペースを管理する方法及びキャッシュ内でページ置換を行う装置
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
JPH05233426A (ja) 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
US5341489A (en) 1992-04-14 1994-08-23 Eastman Kodak Company Memory card with programmable interleaving
JP3299564B2 (ja) * 1992-05-11 2002-07-08 松下電器産業株式会社 メモリ装置
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
JP3105092B2 (ja) * 1992-10-06 2000-10-30 株式会社東芝 半導体メモリ装置
US5341330A (en) 1992-10-30 1994-08-23 Intel Corporation Method for writing to a flash memory array during erase suspend intervals
US5649200A (en) 1993-01-08 1997-07-15 Atria Software, Inc. Dynamic rule-based version control system
JP2856621B2 (ja) 1993-02-24 1999-02-10 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置
US5404485A (en) 1993-03-08 1995-04-04 M-Systems Flash Disk Pioneers Ltd. Flash file system
JPH06266596A (ja) 1993-03-11 1994-09-22 Hitachi Ltd フラッシュメモリファイル記憶装置および情報処理装置
US5519843A (en) 1993-03-15 1996-05-21 M-Systems Flash memory system providing both BIOS and user storage capability
US5479638A (en) 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5485595A (en) 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3215237B2 (ja) 1993-10-01 2001-10-02 富士通株式会社 記憶装置および記憶装置の書き込み／消去方法
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5541886A (en) * 1994-12-27 1996-07-30 Intel Corporation Method and apparatus for storing control information in multi-bit non-volatile memory arrays
JPH08263361A (ja) 1995-03-23 1996-10-11 Mitsubishi Electric Corp フラッシュメモリカード
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US5838614A (en) 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5907856A (en) 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5835935A (en) 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
US6125435A (en) 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5860090A (en) 1995-10-20 1999-01-12 Informix Software, Inc. Append-only storage in a disk array using striping and parity caching
FR2742893B1 (fr) 1995-12-20 1998-01-16 Schlumberger Ind Sa Procede d'inscription d'une donnee dans une memoire reinscriptible
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5896393A (en) 1996-05-23 1999-04-20 Advanced Micro Devices, Inc. Simplified file management scheme for flash memory
US5798968A (en) 1996-09-24 1998-08-25 Sandisk Corporation Plane decode/virtual sector architecture
US6047352A (en) * 1996-10-29 2000-04-04 Micron Technology, Inc. Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
US5890192A (en) 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
JPH10177797A (ja) 1996-12-17 1998-06-30 Toshiba Corp 半導体記憶装置
US6034897A (en) 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6122195A (en) 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US5999947A (en) 1997-05-27 1999-12-07 Arkona, Llc Distributing database differences corresponding to database change events made to a database table located on a server computer
US5930167A (en) 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
JP3588231B2 (ja) 1997-08-04 2004-11-10 東京エレクトロンデバイス株式会社 データ処理システム及びブロック消去型記憶媒体
JP3119214B2 (ja) 1997-09-30 2000-12-18 ソニー株式会社 記憶装置、データ処理システム並びにデータの書き込み及び読み出し方法
JP2914360B2 (ja) 1997-09-30 1999-06-28 ソニー株式会社 外部記憶装置及びデータ処理方法
US6040997A (en) 1998-03-25 2000-03-21 Lexar Media, Inc. Flash memory leveling architecture having no external latch
JP2000122923A (ja) * 1998-07-13 2000-04-28 Sony Corp 記録装置および記録方法、再生装置および再生方法、記録媒体、並びにプログラム記録媒体
JP4046877B2 (ja) 1998-12-14 2008-02-13 株式会社ルネサステクノロジ 一括消去型不揮発性メモリおよび携帯電話
JP2000285017A (ja) * 1999-03-31 2000-10-13 Seiko Epson Corp 記憶装置
US6449625B1 (en) 1999-04-20 2002-09-10 Lucent Technologies Inc. Use of a two-way stack approach to optimize flash memory management for embedded database systems
DE60037417D1 (de) * 1999-07-28 2008-01-24 Sony Corp Aufnahmesystem, daten-aufnahmevorrichtung, speicher-vorrichtung, und daten-aufnahmeverfahren
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6775423B2 (en) 2000-05-03 2004-08-10 Microsoft Corporation Systems and methods for incrementally updating an image in flash memory
US6721843B1 (en) 2000-07-07 2004-04-13 Lexar Media, Inc. Flash memory architecture implementing simultaneously programmable multiple flash memory banks that are host compatible
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6834331B1 (en) 2000-10-24 2004-12-21 Starfish Software, Inc. System and method for improving flash memory data integrity
JP3992960B2 (ja) * 2000-10-26 2007-10-17 松下電器産業株式会社 記録装置及びプログラム
US7062630B2 (en) * 2000-10-26 2006-06-13 Matsushita Electric Industrial Co., Ltd. Storing device for writing data onto a plurality of installed storing mediums, storing control method for the storing device, and program thereof
US7020739B2 (en) * 2000-12-06 2006-03-28 Tdk Corporation Memory controller, flash memory system having memory controller and method for controlling flash memory device
IT1315566B1 (it) 2000-12-12 2003-02-18 Federico Renier Metodo per la certificazione dell'invio,della ricezione edell'autenticita' di documenti elettronici ed unita' di rete
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
JP4256600B2 (ja) * 2001-06-19 2009-04-22 Ｔｄｋ株式会社 メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム及びフラッシュメモリの制御方法
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
JP3967121B2 (ja) 2001-12-11 2007-08-29 株式会社ルネサステクノロジ ファイルシステム、ファイルシステム制御方法およびファイルシステムを制御するためのプログラム
US7328301B2 (en) 2003-04-07 2008-02-05 Intel Corporation Dynamically mapping block-alterable memories
US7107388B2 (en) 2003-04-25 2006-09-12 Intel Corporation Method for read once memory
US8504798B2 (en) 2003-12-30 2013-08-06 Sandisk Technologies Inc. Management of non-volatile memory systems having large erase blocks
US7631138B2 (en) 2003-12-30 2009-12-08 Sandisk Corporation Adaptive mode switching of flash memory address mapping based on host usage characteristics

Similar Documents

Publication Publication Date Title
JP2007517320A5 (ja)
US8751731B2 (en) Memory super block allocation
US8312245B2 (en) Memory block management
US10037167B2 (en) Multiple scheduling schemes for handling read requests
JP4960705B2 (ja) マルチブロック単位へのブロックの適応決定論的グループ化
US8902649B2 (en) Nonvolatile memory device and related method of operation
US11836354B2 (en) Distribution of logical-to-physical address entries across multiple memory areas
TWI527034B (zh) 用於較高效能及能量效率之具有解耦位元的非依電性多位準胞元記憶體
US20050015557A1 (en) Nonvolatile memory unit with specific cache
US9128821B2 (en) Data updating in non-volatile memory
US20150046644A1 (en) Shiftable memory defragmentation
US20100030948A1 (en) Solid state storage system with data attribute wear leveling and method of controlling the solid state storage system
JP2007317224A5 (ja)
JP2012505472A (ja) ソリッドステート記憶装置におけるトランスレーションレイヤ
US20100057979A1 (en) Data transmission method for flash memory and flash memory storage system and controller using the same
WO2013101739A1 (en) System and method for pre-interleaving sequential data
US20100036999A1 (en) Novel method of flash memory connection topology in a solid state drive to improve the drive performance and capacity
US11055167B2 (en) Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
CN117043753A (zh) Zns设备中的不同写入优先级
JP2009503745A5 (ja)
US10838831B2 (en) Die-scope proximity disturb and defect remapping scheme for non-volatile memory
US11113205B2 (en) Die addressing using a reduced size translation table entry
EP3783614B1 (en) Nonvolatile memory device including a fast read page and a storage device including the same
Park et al. An efficient file system for large-capacity storage with multiple NAND flash memories