JP2007515810A - エッジホイール乾燥マニホールド - Google Patents
エッジホイール乾燥マニホールド Download PDFInfo
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- JP2007515810A JP2007515810A JP2006547249A JP2006547249A JP2007515810A JP 2007515810 A JP2007515810 A JP 2007515810A JP 2006547249 A JP2006547249 A JP 2006547249A JP 2006547249 A JP2006547249 A JP 2006547249A JP 2007515810 A JP2007515810 A JP 2007515810A
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- 238000001035 drying Methods 0.000 title claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 125
- 239000012530 fluid Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims description 33
- 238000004891 communication Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 description 18
- 238000012545 processing Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 6
- 230000000087 stabilizing effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 or steam Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
- Washing And Drying Of Tableware (AREA)
- Molds, Cores, And Manufacturing Methods Thereof (AREA)
- Magnetic Record Carriers (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
【解決手段】基板10を乾燥する装置は、エッジホイール102に隣接して配置された吸引マニホールド120を備える。エッジホイールは基板の外縁部を受け止めるエッジホイールの溝104を備え、エッジホイールは基板を所望の速度で回転させることができる。吸引マニホールドは、内部に一つ以上の吸引ポート128を有する近接端部126を備える。近接端部は少なくとも部分的にエッジホイールの溝の中に配置され、供給された吸引力でエッジホイールの溝に蓄積する流体を除去する。
【選択図】図5
Description
Claims (20)
- エッジホイールと吸引マニホールドとを備える装置であって、
前記エッジホイールは、該エッジホイールの側壁によって形成された溝を有し、
前記吸引マニホールドは、前記エッジホイールから流体を除去可能に該エッジホイールの前記溝に隣接して位置決め可能な近接端部を有する装置。 - 更に、前記近接端部に画定され、前記エッジホイールの前記溝に隣接して位置決めされる吸引ポートを備える請求項1記載の装置。
- 更に、前記近接端部に画定され、前記エッジホイールの前記溝に隣接して位置決めされる複数の吸引ポートを備える請求項1記載の装置。
- 更に、前記エッジホイールから流体を除去するための吸引力を提供する吸引供給源を備える請求項1記載の装置。
- 前記近接端部は、前記エッジホイールから流体を除去可能に該エッジホイールの前記溝の内側で、部分的に位置決め可能である請求項1記載の装置。
- 前記エッジホイールの前記溝は、基板の外縁端部を受け止める請求項1記載の装置。
- 前記エッジホイールは所望の速度で回転可能に構成され、該エッジホイールの回転は前記基板の前記外縁端部に伝達される請求項6記載の装置。
- エッジホイールと吸引マニホールドとを備える装置であって、
前記エッジホイールは、該エッジホイールの側壁によって形成された溝を有し、
前記吸引マニホールドは、前記エッジホイールとの間で流体を流通可能に該エッジホイールの前記溝に隣接して位置決め可能な近接端部を有する装置。 - 前記流体の連通は、前記マニホールドに画定されたポートによって促進される請求項8記載の装置。
- 前記流体の連通は、前記マニホールドに画定された複数のポートによって促進される請求項8記載の装置。
- 前記ポートは、吸引ポートを含む請求項9記載の装置。
- 前記流体の連通は、流体の除去および流体の導入の少なくとも一方を含む請求項8記載の装置。
- 前記近接端部は、前記エッジホイールの前記溝の内側で、少なくとも部分的に位置決めされる請求項8記載の装置。
- 前記エッジホイールの前記溝は、基板の端部を受け止めることが可能である請求項8記載の装置。
- 基板エッジを保持する方法であって、
溝を有する少なくとも一つのホイールによって前記基板エッジを受け止める工程と、
前記基板エッジを保持する際に、前記少なくとも一つのホイールの前記溝から流体を吸引する工程と
を備える方法。 - 請求項15記載の方法であって、更に、
前記溝を有する前記少なくとも一つのホイールに隣接して位置決めされる近接端部を有するエッジホイール乾燥マニホールドを、該少なくとも一つのホイールに隣接して位置決めする工程と、
前記基板エッジを保持する際に、前記少なくとも一つのホイールの前記溝から流体を吸引するための吸引力を前記エッジホイール乾燥マニホールドに提供する工程と、
前記ホイールを回転させ該回転を前記基板に伝達する工程と
を備える方法。 - 前記エッジホイール乾燥マニホールドの前記近接端部に吸引ポートを形成した請求項16記載の方法。
- 前記エッジホイール乾燥マニホールドの前記近接端部に複数の吸引ポートを形成した請求項16記載の方法。
- 前記近接端部は、前記少なくとも一つのホイールの前記溝の内側で、少なくとも部分的に位置決めされる請求項16記載の方法。
- 前記少なくとも一つのホイールの前記溝の内側で少なくとも部分的に前記近接端部を位置決めする工程は、前記近接端部と前記少なくとも一つのホイールとの間に約0.015インチの動作間隔を維持する工程を含む請求項19記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/745,219 US7350315B2 (en) | 2003-12-22 | 2003-12-22 | Edge wheel dry manifold |
US10/745,219 | 2003-12-22 | ||
PCT/US2004/042871 WO2005064648A1 (en) | 2003-12-22 | 2004-12-20 | Edge wheel dry manifold |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007515810A true JP2007515810A (ja) | 2007-06-14 |
JP4928950B2 JP4928950B2 (ja) | 2012-05-09 |
Family
ID=34679094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006547249A Expired - Fee Related JP4928950B2 (ja) | 2003-12-22 | 2004-12-20 | エッジホイール乾燥マニホールド |
Country Status (11)
Country | Link |
---|---|
US (1) | US7350315B2 (ja) |
EP (1) | EP1697969B1 (ja) |
JP (1) | JP4928950B2 (ja) |
KR (1) | KR101121934B1 (ja) |
CN (1) | CN100444309C (ja) |
AT (1) | ATE447238T1 (ja) |
DE (1) | DE602004023878D1 (ja) |
IL (1) | IL176467A (ja) |
MY (1) | MY144397A (ja) |
TW (1) | TWI305928B (ja) |
WO (1) | WO2005064648A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040031167A1 (en) | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
DE10302611B4 (de) * | 2003-01-23 | 2011-07-07 | Siltronic AG, 81737 | Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild |
US7578886B2 (en) * | 2003-08-07 | 2009-08-25 | Ebara Corporation | Substrate processing apparatus, substrate processing method, and substrate holding apparatus |
US7350315B2 (en) | 2003-12-22 | 2008-04-01 | Lam Research Corporation | Edge wheel dry manifold |
US20060000494A1 (en) * | 2004-06-30 | 2006-01-05 | Lam Research Corporation | Self-draining edge wheel system and method |
US7089687B2 (en) * | 2004-09-30 | 2006-08-15 | Lam Research Corporation | Wafer edge wheel with drying function |
US8211242B2 (en) * | 2005-02-07 | 2012-07-03 | Ebara Corporation | Substrate processing method, substrate processing apparatus, and control program |
US8127395B2 (en) * | 2006-05-05 | 2012-03-06 | Lam Research Corporation | Apparatus for isolated bevel edge clean and method for using the same |
JP4976949B2 (ja) * | 2007-07-26 | 2012-07-18 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US20090217953A1 (en) * | 2008-02-28 | 2009-09-03 | Hui Chen | Drive roller for a cleaning system |
WO2011017060A2 (en) | 2009-08-07 | 2011-02-10 | Applied Materials, Inc. | Dual temperature heater |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128142A (ja) * | 1985-11-29 | 1987-06-10 | Canon Inc | 薄板状物体の回転装置 |
JPH09270412A (ja) * | 1996-04-01 | 1997-10-14 | Canon Inc | 洗浄装置及び洗浄方法 |
JP2000100768A (ja) * | 1998-09-28 | 2000-04-07 | Tokyo Electron Ltd | 回転処理装置 |
JP2002124508A (ja) * | 2000-10-13 | 2002-04-26 | Nec Corp | 基板用スピン処理装置 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4838289A (en) | 1982-08-03 | 1989-06-13 | Texas Instruments Incorporated | Apparatus and method for edge cleaning |
US4921093A (en) * | 1988-05-09 | 1990-05-01 | Sequa Corporation | Infeed means for high speed continuous motion can decorator |
IT1226303B (it) | 1988-07-26 | 1990-12-27 | Montedipe Spa | Processo ed apparato per la devolatilizzazione di soluzioni di polimeri. |
JPH02130922A (ja) | 1988-11-11 | 1990-05-18 | Toshiba Corp | 半導体基板エッチング装置 |
US5271774A (en) | 1990-03-01 | 1993-12-21 | U.S. Philips Corporation | Method for removing in a centrifuge a liquid from a surface of a substrate |
US5620525A (en) | 1990-07-16 | 1997-04-15 | Novellus Systems, Inc. | Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate |
US5088441A (en) * | 1990-08-23 | 1992-02-18 | Belport Co., Inc. | Cord impregnator |
US5705223A (en) | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
FR2733036B1 (fr) | 1995-04-14 | 1997-07-04 | Unir | Dispositif de protection anti-contamination rapprochee |
US5660642A (en) | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
KR0175278B1 (ko) * | 1996-02-13 | 1999-04-01 | 김광호 | 웨이퍼 세정장치 |
DE19622015A1 (de) | 1996-05-31 | 1997-12-04 | Siemens Ag | Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage |
US5724748A (en) | 1996-07-24 | 1998-03-10 | Brooks; Ray G. | Apparatus for packaging contaminant-sensitive articles and resulting package |
TW357406B (en) | 1996-10-07 | 1999-05-01 | Tokyo Electron Ltd | Method and apparatus for cleaning and drying a substrate |
US5868857A (en) | 1996-12-30 | 1999-02-09 | Intel Corporation | Rotating belt wafer edge cleaning apparatus |
US5967882A (en) | 1997-03-06 | 1999-10-19 | Keltech Engineering | Lapping apparatus and process with two opposed lapping platens |
JP3549141B2 (ja) | 1997-04-21 | 2004-08-04 | 大日本スクリーン製造株式会社 | 基板処理装置および基板保持装置 |
EP0905746A1 (en) | 1997-09-24 | 1999-03-31 | Interuniversitair Micro-Elektronica Centrum Vzw | Method of removing a liquid from a surface of a rotating substrate |
US6398975B1 (en) | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
US6491764B2 (en) | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
ATE287126T1 (de) | 1997-09-24 | 2005-01-15 | Imec Inter Uni Micro Electr | Verfahren zum entfernen einer flüssigkeit von einer oberfläche einer substrat |
US6102777A (en) | 1998-03-06 | 2000-08-15 | Keltech Engineering | Lapping apparatus and method for high speed lapping with a rotatable abrasive platen |
JP3515521B2 (ja) * | 1998-04-16 | 2004-04-05 | セミトゥール・インコーポレイテッド | 半導体ウェーハなどのワークピースの処理方法および処理装置 |
US20020121290A1 (en) | 1999-08-25 | 2002-09-05 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
US6622334B1 (en) | 2000-03-29 | 2003-09-23 | International Business Machines Corporation | Wafer edge cleaning utilizing polish pad material |
US7000622B2 (en) | 2002-09-30 | 2006-02-21 | Lam Research Corporation | Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus |
US6550091B1 (en) * | 2000-10-04 | 2003-04-22 | Lam Research Corporation | Double-sided wafer edge scrubbing apparatus and method for using the same |
DE50004935D1 (de) | 2000-10-31 | 2004-02-05 | Sez Ag Villach | Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen |
WO2002101799A2 (en) | 2001-06-12 | 2002-12-19 | Verteq, Inc. | Stackable process chambers |
DE60218708D1 (de) | 2001-09-24 | 2007-04-19 | Cosmetic Technologies Llc | Vorrichtung und verfahren zum individuellen zusammenstellen von kosmetika |
US7350315B2 (en) | 2003-12-22 | 2008-04-01 | Lam Research Corporation | Edge wheel dry manifold |
US20060000494A1 (en) | 2004-06-30 | 2006-01-05 | Lam Research Corporation | Self-draining edge wheel system and method |
US7089687B2 (en) | 2004-09-30 | 2006-08-15 | Lam Research Corporation | Wafer edge wheel with drying function |
-
2003
- 2003-12-22 US US10/745,219 patent/US7350315B2/en not_active Expired - Fee Related
-
2004
- 2004-12-20 EP EP04815000A patent/EP1697969B1/en not_active Not-in-force
- 2004-12-20 AT AT04815000T patent/ATE447238T1/de not_active IP Right Cessation
- 2004-12-20 JP JP2006547249A patent/JP4928950B2/ja not_active Expired - Fee Related
- 2004-12-20 WO PCT/US2004/042871 patent/WO2005064648A1/en not_active Application Discontinuation
- 2004-12-20 DE DE602004023878T patent/DE602004023878D1/de active Active
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- 2004-12-22 MY MYPI20045299A patent/MY144397A/en unknown
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2006
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- 2006-06-22 KR KR1020067012552A patent/KR101121934B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128142A (ja) * | 1985-11-29 | 1987-06-10 | Canon Inc | 薄板状物体の回転装置 |
JPH09270412A (ja) * | 1996-04-01 | 1997-10-14 | Canon Inc | 洗浄装置及び洗浄方法 |
JP2000100768A (ja) * | 1998-09-28 | 2000-04-07 | Tokyo Electron Ltd | 回転処理装置 |
JP2002124508A (ja) * | 2000-10-13 | 2002-04-26 | Nec Corp | 基板用スピン処理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20060123379A (ko) | 2006-12-01 |
US20050132953A1 (en) | 2005-06-23 |
MY144397A (en) | 2011-09-15 |
TWI305928B (en) | 2009-02-01 |
JP4928950B2 (ja) | 2012-05-09 |
TW200539237A (en) | 2005-12-01 |
ATE447238T1 (de) | 2009-11-15 |
IL176467A0 (en) | 2006-10-05 |
CN1898773A (zh) | 2007-01-17 |
CN100444309C (zh) | 2008-12-17 |
WO2005064648A1 (en) | 2005-07-14 |
DE602004023878D1 (de) | 2009-12-10 |
EP1697969B1 (en) | 2009-10-28 |
US7350315B2 (en) | 2008-04-01 |
IL176467A (en) | 2011-06-30 |
KR101121934B1 (ko) | 2012-03-09 |
EP1697969A1 (en) | 2006-09-06 |
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