TWI305928B - Edge wheel dry manifold - Google Patents
Edge wheel dry manifold Download PDFInfo
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- TWI305928B TWI305928B TW093139813A TW93139813A TWI305928B TW I305928 B TWI305928 B TW I305928B TW 093139813 A TW093139813 A TW 093139813A TW 93139813 A TW93139813 A TW 93139813A TW I305928 B TWI305928 B TW I305928B
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- substrate
- edge
- wheel
- edge wheel
- groove
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- 239000000758 substrate Substances 0.000 claims abstract description 83
- 238000001035 drying Methods 0.000 claims abstract description 47
- 239000012530 fluid Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims description 2
- 206010011469 Crying Diseases 0.000 claims 1
- 241001233061 earthworms Species 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 abstract description 6
- 238000005553 drilling Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- 241000282320 Panthera leo Species 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000255925 Diptera Species 0.000 description 1
- 235000006040 Prunus persica var persica Nutrition 0.000 description 1
- 240000006413 Prunus persica var. persica Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- -1 vapors Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
- Washing And Drying Of Tableware (AREA)
- Molds, Cores, And Manufacturing Methods Thereof (AREA)
- Magnetic Record Carriers (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
305928 九、發明說明: 一、【發明所屬之技術領域】 本發明大致是關於基板清潔與乾燥,更特別是關於在諸如半 導體晶圓、硬碟、液晶顯示裝置(LCD)或平面顯示面板斤!^)等之 基板的製造期間,用以避免流體沉積與累積在基板表面上的技 術、系統與設備。 二、【先前技術】 ,在用來製造半導體裝置、LCD、磁碟、fdp等等的製程中, 於製程的各種階段時需要執行基板的濕式清潔。舉例而言,積體 上係製造成複層結構的形式。在基板層級,具有擴 ίΪΪϋΐ置係設置在雜板之上與内部。在接續層級中,、 平 ===絕:一的屬=要來 除掉超過的麵讀桃料齡域(CMP)操作來移 製造操作十分重要的需要之潔:度 可接受的殘留物或污染物導入到可無效,則會將不 理環境中。 Τ此包3欲製造之裝置整體的處 數種基板乾燥操作與技術係 "^使用的,與其包含有如轉動以絜與其它基板乾燥 化例、構造與技術在典 動轉複數之轉動乾燥變 的轉動乾城程中,將具有或未具有 1305928 乾燥劑之液體沖洗或清潔劑施加至基板表面,並藉 者轉動基巧伽—力來乾縣板祕基絲面歸掉。並糟 右示使_動乾燥技術將流體從基板1G表面移除。呈 ^欲轉動—乾燥之-有效表面與一背側表面的典型水平定囱向移^具 、、係疋位在具有一個以上之固定邊緣輪12與一穩定邊ς 燥或一轉動沖洗乾燥(SRD)設備中。心示ΐ6的^_式 W因此如流體流方向箭頭18所示般讓沖洗與乾燥劑、 液體_何其它流體因離心力而從基板10表面處趕走。 燥與馬蘭葛尼/猶乾燥等這樣的乾燥技術通常 夕ίίίίΐΓ有效的’但是對於基板邊緣的效應則是顯著例 在固體,則又可職難捉並受捕集 基板處_嚴格要求,故高度期望完全 用目前的設備與技術卻很少達成。所需要的是 抑=且ί效之基板邊緣麵、鎌掉基板邊緣上之流體再沉 積的糸統、技術與設備。 三、【發明内容】 姑t發0月^透贼供一種用來乾燥基板、包含有將流 / Ί之—邊緣輪凹槽處移轉的設備來滿足這些需要 “本在無數方法下執行,包含有—製程、—設備、一 …:一ί置'、—方法。下面會描述本發_若干實施例。 且右中’提供一設備。該設備包含有:-邊緣輪,其 目、^由§亥邊緣輪之側壁所形成的一凹槽;以及,一真空歧管,其 該真空歧管之轉近端係能敝位在該邊緣輪之 Μ凹槽鄰近處’ U便能触該邊雜處移轉流體。 例中’提供一備。該_包含有:-邊緣輪, /、具有由錢緣輪之側壁所形成的—凹槽;以及,—歧管,其具 1305928 七鄰,:歧管之該鄰近端係能夠定位在該邊緣輪之該凹槽鄰 近處,而此與該邊緣輪的流體流通。 ’提供用來固^基板邊緣的—方法。該方 法包3步驟有.者具有-讀之至少—輪來容峨基板 真空 燥期間、流體再沉積於一基板之外圍周圍 ί j及:在固賴基板邊緣時,從該至少—輪之該凹槽處將流體抽 iff 技術之伽。本發明之-顯著長處與 =積:定位在邊緣輪内之一基板的外圍周圍;^ 這 燥0 樣除掉再沉積的流體源,並達到較高的基^乾 ϋ明貫施例之另—長處係容綠既有紐與賴 =正=展之祕與設備愤行的。組成部分係料且便宜1 k,並產生出廢棄物減量與製造精確性的顯著回報。 义 本發明之其它優點將由下列詳盡描述、侔隨 明原理之案例而變得明顯。 4件_圖、經由本發 四、【實施方式】 燥姑if描賴於基板處理的發明。在較佳實施例中,邊緣輪乾 =曹,細、並避免基板周緣部上的流體=來= y中’為了提供本發明㈣盤了解’故提出無數二 =對於該項技術之相關人士而言將可理 ^沒、: 些狀細節下來實踐出本發明。在其它ί^ 要,掉本發明的焦點,故不會詳細描述已知的=為了不 如吾人所瞭,乾絲板之-方法係縣使轉動/乾燥或 1305928 SRD設備,之後統稱之為SRD設備。如上泉昭 設備會使_心力來趕走基板之有效與= 顯示流體如何沿著基板10周緣部受捕集^ 體。f 的一般任何類輪:ί 輪102,上作為例如基板10的定位、支撐與 3 ίΪίίί)ϋ基^理包含有通常藉著邊緣輪102之轉動所ί 一將根據期望基板處理而準備、諸如清潔 侧表1㈣有效與背 =處所示的受捕集:流;係‘ 在定義著基板1〇〇之周緣部絲==4 i处旦利用邊緣輪1〇2來轉動基 ^ 再沉積在基板川外圍周圍的有效與背側表面;1又捕木流體1〇6 體、如同流體微點108的受捕集流 位在基板Γ外=;^性流體微點108係顯示在圖3中 C108 係可、且 處。=流體微點則代表著基板10不期望、==點 燥歧^ 12G 發明—實_的邊緣輪乾燥歧管12G。邊緣輪乾 ί品=Λ有具備著一連接端124與-鄰近端⑶ί以 在—實施例3412^含有從—至複數之的孔口 128,該孔口 128 口伽、中而在^明實施例中則包含有上真空孔 -工孔口 128b與下真空孔口 128c。在其它實施例中, 1305928 會根據執行著邊緣輪乾燥歧管⑽之處 二,相對應於識別為上真空=等中真 =孔f8b與下真空孔口 128c之一個以上區域 中真 實施例中’孔口 128係錯錘測量穿過歧管主體12 丄。- =。,該機械動作會造成如連接端m上所示的孔口鑽孔=或 在說明實施例中,連接端m會連接至諸如 诸如圖1獅的穩定輪14之―穩定錄j 例中的-穩定臂,但如下所說明與描述 係根=望的執行、SRD設備料衫扣設成^^歧二^) 如ΡΕΤ ί^ΓίϊΓ祕邊緣輪乾燥歧管120係以諸如 如T PEAK #荨)的材料、或容易機械操作 品腐峨的其:這樣以=夺可能需要之複數種化學藥 在本發明一實施例中,鄰近端126包含有— 係設置來定位在鄰近、且至少—部份位在邊緣輪凹样 〇4(參見圖2)内。可如圖2所見,邊緣輪凹槽1〇4係靠著 所設置的。在本發明-實施例中’鄰近端u j 匹配情近端12_上符合其形狀且讓其^;:= 份位在邊緣輪凹槽104内。 #~ σ, 圖5係顯示發明-實施_姐輪獅歧管12Q 圖。在說明實施例中,雜輪乾燥歧管12〇係 ^ ===邊緣輪凹槽104内。鄰娜= 表。基板1〇係與鄰近端⑶對向且定 位在政緣輪凹槽104内’顯示基板乾燥設備的—操作狀態。在處 理期間’維持鄰近端m與定義著邊緣輪凹槽1〇4之邊緣輪側壁 腿間的操作空隙146。在本發明—實施例中,邊緣輪乾燥歧管 1305928 整’以便建立並在一一致性、期望.的操作空隙146。 與邊緣輪乾燥歧管120的額外細節,以下將參 照圖6與7來加以提供。 直示的實施例中,顯示出三個真空孔口 128、包含有上 工孔=128a、中真空孔口 128b與下真空孔口 U8c。 =置一至複數之真空孔口 一 置、_禮y* 真工孔口 128位置(例如上、中與下)係可將所設 置=僅在中真空孔口遍與/或下真空孔口既位置的真空 真=孔πΤί掉。在具有上真空孔口 128a、中真空孔口 128b與下 實施例中,角度崎形成真空孔口 128的体 鄰近端‘頂形成於零度角位置處' ^中直成與中雜孔口咖之零度角有關、或若未建 度至約6〇度的範圍内’又在-實施例中該 心ΐίίΐ —實施例中,狀謂著穿過歧管主體122之中心 測量建構的真空孔口128處提供抽真空。在說明實 d 3鑽孔129會貫穿歧管主體_中央區或核心Ϊ 已知:孔口128a、12跖與128c。真空鑽孔129係可根據 體的建構,包含有鑽穿或鑽孔㈣歧管主 鄰近立山126 ^由^或鑽t通過鄰近端126的一歧管、線’與隨著 中,詈ίί與/或歧管線來刺出真空孔口 128。在一實施例 4 ^134) ^ 、、印iirt實施例中,歧管主體122之中央區或核心係除了 “製造^棘技^ 了'送(未_而加以錯錘測量。根據已知 ,會在歧管紐122内建構兩條以上的線路(未 移除掉紐、還有移除掉或排空掉空氣、蒸氣、氣 10 1305928 體等等外,尚能夠輸送流體、空氣、蒸氣或氣體β . 圓6係顯示發明一實施例的邊緣輪乾燥歧管120之横剖面 ' 圖。圖6顯示出一邊緣輪乾燥歧管120’其具備著包含有一連接端 1 一24與一鄰近端126的一歧管主體122。邊緣輪乾燥歧管12〇係顯 不在鄰近於邊緣輪102的一操作位置中,其具有至少一部份位在 邊緣輪凹槽104内且鄰近於定義著邊緣輪凹槽1〇4之侧壁1〇2a的 鄰近端126。在說明實施例中,設置著中真空孔口 12跖盥下真办 孔口 128c、並藉著真空鑽孔129將其連接至與抽真空供應器未& 示)連接的真空裝配134處。 . 在說明實施例中,邊緣輪乾燥歧管⑽係附著至亦為邊緣輪 提供安裝與定位用的穩定臂14〇。可為螺絲、螺栓、大頭釘、 鎖針或任何其他已知方法之固定附著機械組件的連接器丨36,其會 於連接端124處而將邊緣輪乾燥歧管12〇附著至稃定臂 : =中,連接_會於安裝請(參見圖:乾 ^歧官⑽固定至穩定臂刚。應體會到雖然如目6所示之邊緣輪 1= 支官120係建構至穩定邊緣* 102的,但是邊緣輪乾燥歧管 1如係可建構至、並準備與任何類型之邊緣輪1〇2 一併設置的。識 釋為之邊緣輪102乃是示範性的’並不應將其解 >本is實施例中’邊緣輪102可調整至維持基板1〇的精 ϋ。藉㈣例,基板1G係顯示在—典型水平方向中,且應體 ^頁可能要求垂直方向的調整、上或下,並透過二 (例如i直相對應垂直調i :近端_,輪4 的以 方S頭臂140的安裝孔(未圖示)開槽’以便實現由 】頭8所代表_向或水平·。邊緣輪觀歧管12〇 11 1305928 调整的額外細節’以下將參關7來加以提供。 圖7係顯=發明一實施例的邊緣輪乾燥歧管12〇之橫剖面 ,1如圖7所示的說明實施例包含有具備著一連接端124與一鄰 歧管主體122。鄰近端126是鄰近於邊緣輪1〇2,與 至°卩份位在由邊緣輪側壁i〇2a所形成的邊緣輪凹槽1〇4内。 ^不^實施例包含有藉著真空鑽孔Π9而連接至為真空供應器連 接所设置之真空裝配134的一單一中真空孔口 128b位置。 ^^如上參照圖6所述者,邊緣輪102典型上是可至少在如方向 =碩142所示的一垂直方向中調整的,以便為基板1〇(參見圖句 ,到並維持在期望的調準,並實現高速基板10轉動。因此,一實 列的邊緣輪1〇2是可至少在如方向箭頭142所示的一垂直方向 =調整的,以便讓鄰近端126達到並維持在與邊緣輪凹槽1〇4相 f、應的期望定位與調準。在說明實施例中,邊緣輪脱係藉著轴 144、而可調整地連接至穩定臂14〇的。同樣地,在一實施例中, 軸144 ^供邊緣輪乾無歧管12〇在如方向箭頭142所示之垂直方 向中=調準。導引針146會從附著端124延伸至穩定臂14〇,以便 維持定位,並避免邊緣輪乾燥歧管π〇因作用在歧管主體122上 之扭力或其他作用力而移位。 f如圖7所示的實施例中,設置著一單一真空孔口位置、亦 =中,孔口 128b °如上所述’為了從邊緣輪凹槽1〇4處排空水 L、i任何其它流體、蒸氣、氣體,故可將真空孔口餅鄰近端 126中的任何期望位置。在各位置處(上128&、中通與下⑽, 參見圖4)可設置著從一至複數之的真空孔口 128。藉著於裝配i34 所施加的抽真空’故將邊緣輪凹槽刚_ 體、蒸氣或氣體)透過真空孔口 128而移除掉。^ 明)中會提供穿過歧管主體122的額外缝測量/以& ^體在氣 氣清潔邊緣輪1〇2或基板1〇邊緣(參見 孔口是否排空或導人流體、或氣體或酿,乃是符合於當作^ 12 1305928 直方向上調整的。而邊緣輪乾焊歧輿 二=142所不的垂 =與定義著邊,凹槽1〇4之邊緣輪了的 it隙i46,故在—Λ施例中提供橫向定位(未圖示)的調整。在二 讓邊緣輪乾燥歧管12G表面並t $緣輪102直接接觸,並維持麵似⑽15 ^ fα(κ^ M6() ^鋪禮明另-實施_邊緣輪賴歧管i2Q。邊 120旨在用於複數之清潔與乾燥設備中的,且其二 一r定邊=:)=:= ======= ΐΓ=二定位在邊緣輪102中,且各邊緣輪ί 綱咖與⑽乃 絲jfif發得知’基板10係藉著鄰近頭部基板處理系 牲《I:來ί?動與處理的。雖然鄰近頭部基板處理系統150是 1與/或沖洗與乾燥卫具,但是當基板插人鄰近頭部 ^150日禮型上部是潮濕的。因此,當轉動基板上時,不論鄰 從ϋ ίΓ;Γ面 位ΐ或處理狀態’均會將基板上的既有液體 攸基板10表面歧走。流财收集並鋪受觀在邊緣輪凹槽 13 1305928 内在、則讓其可再沉積於基板10外圍 .二姆魏燥歧㈣設 •作孔口 128b盘下亩:孔通與至卜下真空孔口 128c。中真 ;i, 129 實施例的執行而蚊轉並提升的, 讓流體再沉積於基板10上。 疋’保禾收歧體且不會 200 發,施例的基板乾燥方法操作之流程圖 中,^反是^本欲乾燥之基板的操作202開始的。在-案例 —ί板 +導體日日圓,而該半導體晶圓具有複數之所定義、 ί體中=ί在該半導體晶圓内的結構。而該結構可為諸如 電路、§己憶體讀轉通常製造在半導體日日日圓 2類f °其它基板_包含㈣碟、液晶顯示裝置^面顯干 =進请騎雜_祕__下容納的 反,之洗_/或沖洗的處理。基板典型上係處於一水 谷納的’但是根據將基板容納至内部的設備構造, :勺。a目對應工具之構造而讓基板水平、垂直或任何方向來定位 性劲至將基板定位並固定至邊緣輪的操作2〇4。在示範 燥設Ξ ,於可為包含有如圖9所示之鄰近清潔與乾 士種類里與構造的SRD設備令。既有SRD設備與目前 、切、=中之SRD設備是利用邊緣輪來定位並固定基板,且在 Hi 期間亦使用這麟備來讓基板以期望設定速ί轉 至、容納並定位在邊緣輪中’而讓基板的周緣部插ί 輪。或對者具有由邊緣輪主體之側壁所定義之邊緣輪凹槽的邊緣 或棘ί著级it作206中’轉動基板。如上所述,讓邊緣輪轉動 次轉動’祕讓獅傳遞在紐邊緣上,航縣板在—期望速 14 1305928 =轉動。期望速可純設定键立、然 持在設定速度,接著根據處理需要來修正。 會產生出乾燥基板時所使用的離心力。’心。轉動速度 該方法繼續至將流體從邊緣輪槽中拙直 述,離心與其它力量會將流體從基所 這樣讓流體從基板周緣部排出。所排出之“走’ 邊緣輪凹槽中,且係可接著以流_點方^ 集在 :抽:實施例係執行位在邊緣輪凹槽内之累積 的抽真空或排空,避免更進—步在基板上、二,^體 义义口 口*" I®..... ' 續ί潔、沖洗與乾燥的操作。 邊緣 體,並 在本發明一每丨士 上......"、,丨兀丹乳踩的操作 ϊ=!ί!ΐί?體從邊’ 2ΐ;ίίΓ===;^_,會根據處 的抽真空動作。在已瘦2法來執行或循環邊緣輪凹槽 燥,即完ί^ί成基板的處理時,不再需要邊緣輪的乾 在附錄專細描述前述發明,將體會到 限於此處所說的細節,亦u的,故本發明並不揭 者内可加以修正。了了在嶋之專辦請翻之簡與和等 五、【圖式簡單說明】 =⑽來將流體從基板的表面移除掉。 凹槽可容納—么邊:邊緣輪凹槽之側壁的邊緣輪,該邊緣輪 圖4顯示依二2流體再沉積成流體微點。 圖5係顯讨H 觸魏輪乾燥歧管。 -實施例的邊緣輪乾燥歧管之橫剖面圖。 15 1305928 圖6係顯示依本發明一實施例的邊緣輪乾燥歧管之橫剖面圖。 圖7係顯示依本發明一實施例的邊緣輪乾燥歧管之橫剖面圖。 ^ :系顯示依本發明另—實施例的邊緣輪乾燦歧管 元件符號說明 10〜基板 方法操作之流 程圖 12〜固定邊緣輪 14〜穩定邊緣輪 籲 16〜箭頭 . 18〜箭頭 102〜邊緣輪 102a〜邊緣輪側壁 104-邊緣輪凹槽 106〜受捕集流體 108〜體微點 120〜邊緣輪乾燥歧管 122〜歧管主體 _ 124〜連接端 126〜鄰近端 128a〜上真空孔口 128b〜中真空孔口 128c〜下真空孔口 13〇〜安裝孔 132〜孔口鑽孔插銷 I29〜真空鑽孔 146〜空隙 134〜裝配 16 1305928 136〜連接器 140〜穩定臂 142、148〜方向箭頭 144〜轴 150〜系統 152a、152b〜鄰近頭部 200〜流程圖
Claims (1)
- 劃線) 97年4月14日修訂 K05928第93139813號專利申請案中文申請專利範圍修正本(無 1. '申請專利範圍: 種基板之乾燥設備,'包含: —if,’具有由該邊緣輪之側壁所形成的-凹槽.以及. 凹持;有一鄰近端,該鄰近端符合該凹4並位於該 鄰:在該邊緣輪之該凹槽 “二;:===與該凹槽間維持-操作空 2.如申請專利範圍第1項的基板之乾 =真空孔,狀棘紅孔口’ 輪的該凹;jf崎處。 ㈣1職歧在該邊緣 ^如利^圍第1項的基板之乾燥設備,更包含複數之真空孔 位在於該設備之該鄰近· 4哭如=專利顧第1項的基板之麵設備,更包含-真空供應 5°:如真空狀態,以便從該邊緣輪處移除掉流體。 明專利乾圍第1項的基板之乾燥設備,其中,一芙 邛受容納於該邊緣輪之該凹槽内。 八 土 ΰ、’ =紐之麵雜,射,贿緣輪係用 H 躺,且料緣歡_傳遞基板之該 7.一種基板之乾燥設備,包含: 輪其具有由該邊緣輪之側壁所形成的—凹槽;以及, 凹梓之报I ϋί:鄰近端,該歧管之該鄰近端符合該邊緣輪 ® 〇曰二:b夠定位在該邊緣輪之該凹槽鄰近處,以維持範 δ 0 f :之操作空_實現與該邊緣輪的流體流通。 ㈣7項的基板之乾燥設備,其中,該流體流通係 猎者形成於該歧官内之一孔口來促成。 9.如申4專利縫第7項的基板之乾燥設備,其巾,該流體流通係 1305928 藉著形成於該歧管内之複數之孔Q來促成。 該孔口是〜 流體流通包 該鄰近端係 該邊緣輪能 ίο.如申請專利範圍第8項的基板之乾燥設備,其中 真空孔口。 、 ’、 11. 如申請專利範圍第7項的基板之乾燥設備,其中 含有移除掉流體與導入流體其中一者" 12. 如申請專利範圍第7項的基板之乾燥設備,其中 定位成至少部份位於該邊緣輪凹槽内。 13. 如申請專利範圍第7項的基板之乾燥設備,其中 夠容納一基板之一邊緣。 14·一種用來固定一基板邊緣之方法,其包含步驟有: 藉著具有一凹槽之至少一輪來容納該基板邊緣; *在固定該基板邊緣時,從該至少—輪之該凹槽處將流體抽真 其中’從該該凹槽處將流體抽真空包括: 設置一邊緣輪乾燥歧管,該邊緣輪乾燥歧管包括一鄰近 該鄰近端符合該至少一輪之凹槽; 一將該邊緣輪乾燥歧管之該鄰近端定位在該至少一輪鄰近處, 該定位包括在該鄰近端與該至少一輪間維持範圍〇 〇5_至 1.5mm之操作空隙; 對於該邊緣輪乾燥歧管提供抽真空,該抽真空能夠在固定該 基板邊緣時,從該至少一輪之該凹槽處將流體抽真空;及 Λ 轉動該至少一輪,該至少一輪之轉動會將轉動傳遞至基板, 其中該提供給該邊緣輪乾燥歧管之抽真空將流體從該至少一輪 凹槽處移除掉。 如申請專利範圍第14項的用來固定一基板邊緣之方法,其中, 該邊緣輪乾燥歧管包含有在該鄰近端内所形成之一真空孔口。 16.如申請專利範圍第14項的用來固定一基板邊緣之方法,其中, 該邊緣輪乾燥歧管包含有在該鄰近端内所形成之複數之真空孔 口。 19 1305928 17.如申請專利範圍第14項的用來固定一基板邊緣之方法,其中, 該鄰近端係定位成至少一部份位於該至少一輪之該凹槽内。 十一、圖式:
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US11133210B2 (en) | 2009-08-07 | 2021-09-28 | Applied Materials, Inc. | Dual temperature heater |
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MY144397A (en) | 2011-09-15 |
CN100444309C (zh) | 2008-12-17 |
DE602004023878D1 (de) | 2009-12-10 |
ATE447238T1 (de) | 2009-11-15 |
US20050132953A1 (en) | 2005-06-23 |
JP4928950B2 (ja) | 2012-05-09 |
EP1697969B1 (en) | 2009-10-28 |
IL176467A (en) | 2011-06-30 |
EP1697969A1 (en) | 2006-09-06 |
CN1898773A (zh) | 2007-01-17 |
TW200539237A (en) | 2005-12-01 |
WO2005064648A1 (en) | 2005-07-14 |
IL176467A0 (en) | 2006-10-05 |
US7350315B2 (en) | 2008-04-01 |
KR20060123379A (ko) | 2006-12-01 |
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JP2007515810A (ja) | 2007-06-14 |
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