JP2006148069A - 基板を処理するための装置および方法 - Google Patents
基板を処理するための装置および方法 Download PDFInfo
- Publication number
- JP2006148069A JP2006148069A JP2005283367A JP2005283367A JP2006148069A JP 2006148069 A JP2006148069 A JP 2006148069A JP 2005283367 A JP2005283367 A JP 2005283367A JP 2005283367 A JP2005283367 A JP 2005283367A JP 2006148069 A JP2006148069 A JP 2006148069A
- Authority
- JP
- Japan
- Prior art keywords
- fluid
- meniscus
- wafer
- substrate processing
- proximity head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 98
- 239000000758 substrate Substances 0.000 title claims abstract description 76
- 239000012530 fluid Substances 0.000 claims abstract description 755
- 230000005499 meniscus Effects 0.000 claims description 323
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 151
- 230000008569 process Effects 0.000 claims description 77
- 238000001035 drying Methods 0.000 claims description 33
- 238000004140 cleaning Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 13
- 238000001459 lithography Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 16
- 239000000243 solution Substances 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 344
- 239000012634 fragment Substances 0.000 description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 239000007788 liquid Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 230000033001 locomotion Effects 0.000 description 17
- 239000008367 deionised water Substances 0.000 description 13
- 229910021641 deionized water Inorganic materials 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000002209 hydrophobic effect Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 238000007792 addition Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Weting (AREA)
- Coating Apparatus (AREA)
Abstract
【解決手段】基板を処理するための方法であって、複数の注入口の一部から基板の表面に流体を塗布する工程と、流体が表面に塗布されている最中に流体を基板の表面から除去する工程とを備える方法が提供される。流体を塗布する工程および流体を除去する工程は、基板の表面上に流体メニスカス部を形成する。
【選択図】図3
Description
Claims (30)
- 基板を処理する基板処理方法であって、
複数の注入口の一部から前記基板の表面に流体を塗布する工程と、
前記流体が前記表面に塗布されている最中に、前記流体の少なくとも一部を前記基板の表面から除去する工程と
を備え、
前記流体を塗布する工程および前記流体を除去する工程は、メニスカス状の前記流体である流体メニスカス部を前記基板の表面上に形成することにより行われる基板処理方法。 - 更に、前記流体メニスカス部において前記基板の表面を処理する工程を備える請求項1記載の基板処理方法。
- 前記流体メニスカス部において前記基板の表面を処理する工程は、エッチング工程,洗浄工程,すすぎ工程,メッキ工程,乾燥工程,リソグラフィ工程の一つを含む請求項2記載の基板処理方法。
- 更に、付加的な流体メニスカス部を生成する工程を備える請求項1記載の基板処理方法。
- 請求項4記載の基板処理方法であって、
前記付加的な流体メニスカス部を生成する工程は、
複数の注入口の別の一部から前記基板の表面に付加的な流体を塗布する工程と、
前記付加的な流体が前記表面に塗布されている最中に、前記付加的な流体の少なくとも一部を前記基板の表面から除去する工程と
を備える基板処理方法。 - 前記流体は、リソグラフィ用の流体,エッチング用の流体,メッキ用の流体,洗浄用の流体,乾燥用の流体,すすぎ用の流体の一つである請求項1記載の基板処理方法。
- 更に、表面張力低下流体を前記基板の表面に塗布する工程を備える請求項1記載の基板処理方法。
- 前記表面張力低下流体は、窒素ガスに含まれるイソプロピルアルコール蒸気である請求項7記載の基板処理方法。
- 注入口の少なくとも一つから前記基板の表面に前記流体を塗布する工程は、流量制御装置によって管理される請求項1記載の基板処理方法。
- 前記流量制御装置は、対応する少なくとも一つの注入口への流体の流動を可能にするオン状態と、前記対応する少なくとも一つの注入口への流体の流動を遮断するオフ状態とを移行して動作するように設定される請求項9記載の基板処理方法。
- 前記基板の表面から前記流体を除去する工程は、複数の排出口の一部を通じて行われ、前記複数の排出口の各々を通じて前記流体を除去する工程は、流量制御装置によって管理される請求項1記載の基板処理方法。
- 前記流量制御装置は、対応する少なくとも一つの排出口からの流体の流動を可能にするオン状態と、前記対応する少なくとも一つの排出口からの流体の流動を遮断するオフ状態とを移行して動作するように設定される請求項11記載の基板処理方法。
- 前記複数の注入口の一部は、前記流体を塗布する少なくとも一つの注入口と、表面張力変化流体を塗布する少なくとも一つの注入口とを含む一群の注入口であり、前記複数の注入口の一部を通る流れは、流量制御装置によって管理される請求項1記載の基板処理方法。
- 前記基板の表面から前記流体を除去する工程は、一群の排出口を通じて行われ、前記一群の排出口を通る流れは、流量制御装置によって管理される請求項1記載の基板処理方法。
- 基板を処理する基板処理装置であって、
複数の導管を有する近接ヘッドと、
前記近接ヘッドに連結され複数の導管のうち対応する一つの導管に流体を供給する流体入力部であって、前記複数の導管のうち前記対応する一つの導管は、メニスカス状の前記流体である流体メニスカス部を前記基板の表面上に生成する流体入力部と、
前記流体入力部を通る流体の流れを管理する流量制御装置と
を備える基板処理装置。 - 請求項15記載の基板処理装置であって、
前記複数の導管は、
前記基板の表面に前記流体を塗布する少なくとも一つの注入口と、
前記基板の表面から前記流体の少なくとも一部を除去する少なくとも一つの排出口と
を含む基板処理装置。 - 前記複数の導管は、更に、前記ウエハの表面に第3の流体を塗布する少なくとも一つの注入口を含む請求項16記載の基板処理装置。
- 前記流体メニスカス部において、エッチング工程,洗浄工程,すすぎ工程,メッキ工程,乾燥工程,リソグラフィ工程の一つを実施することが可能である請求項15記載の基板処理装置。
- 前記第3の流体は、前記第2の流体の表面張力を変化させる請求項17記載の基板処理装置。
- 前記流量制御装置は、弁,流量制限器,栓のいずれかである請求項15記載の基板処理装置。
- 前記弁は、前記流体入力部を通る少なくとも一つの流体の流れを促進する請求項20記載の基板処理装置。
- 請求項15記載の基板処理装置であって、更に、
対応する少なくとも一つの排出口から流体を除去する流体出力部であって、前記対応する少なくとも一つの排出口は、前記基板の表面上の前記流体メニスカス部から前記流体を除去する流体出力部と、
前記流体出力部を通る流体の流れを管理する流量制御装置と
を備える基板処理装置。 - 前記流体出口部を通る流体の流れを管理する前記流量制御装置は、弁,流量制限器,栓のいずれかである請求項22記載の基板処理装置。
- 前記弁は、前記流体出口部を通る少なくとも一つの流体の流れを促進する請求項23記載の基板処理装置。
- 基板を処理する基板処理システムであって、
メニスカス状の流体である少なくとも一つの流体メニスカス部を生成する近接ヘッドと、
前記近接ヘッドに連結され前記近接ヘッドに前記流体を供給する流体入力部と、
前記流体入力部に連結され前記流体入力部に前記流体を供給する流体供給部と
を備える基板処理システム。 - 前記流体入力部は、前記近接ヘッドへの流体の移送を管理する流量装置を含む請求項25記載の基板処理システム。
- 前記流体供給部は、前記近接ヘッドへの流体の移送を管理する流量装置を含む請求項25記載の基板処理システム。
- 請求項25記載の基板処理システムであって、更に、
前記近接ヘッドに連結され前記近接ヘッドから流体を除去する流体出力部と、
前記流体出力部に連結され前記流体出力部から前記流体を除去する流体供給部と
を備える基板処理システム。 - 前記流体出力部は、前記近接ヘッドからの流体の移送を管理する流量装置を含む請求項28記載の基板処理システム。
- 前記流体供給部は、前記近接ヘッドからの流体の移送を管理する流量装置を含む請求項28記載の基板処理システム。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/957,260 US7520285B2 (en) | 2002-09-30 | 2004-09-30 | Apparatus and method for processing a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006148069A true JP2006148069A (ja) | 2006-06-08 |
JP4578373B2 JP4578373B2 (ja) | 2010-11-10 |
Family
ID=35482287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005283367A Expired - Fee Related JP4578373B2 (ja) | 2004-09-30 | 2005-09-29 | 基板処理装置 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7520285B2 (ja) |
EP (1) | EP1643541B1 (ja) |
JP (1) | JP4578373B2 (ja) |
KR (1) | KR101164826B1 (ja) |
CN (1) | CN1794420B (ja) |
MY (1) | MY163666A (ja) |
SG (1) | SG121162A1 (ja) |
TW (1) | TWI278358B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009240972A (ja) * | 2008-03-31 | 2009-10-22 | Jfe Steel Corp | 金属帯への塗装方法 |
JP2011507270A (ja) * | 2007-12-14 | 2011-03-03 | ラム リサーチ コーポレーション | 単相および二相の媒体による粒子除去のための装置 |
JP2012520561A (ja) * | 2009-03-10 | 2012-09-06 | ラム リサーチ コーポレーション | パーティクル汚染物質除去の方法 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7584761B1 (en) * | 2000-06-30 | 2009-09-08 | Lam Research Corporation | Wafer edge surface treatment with liquid meniscus |
US6884145B2 (en) * | 2002-11-22 | 2005-04-26 | Samsung Austin Semiconductor, L.P. | High selectivity slurry delivery system |
KR20180089562A (ko) | 2003-04-10 | 2018-08-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
KR101238142B1 (ko) | 2003-04-10 | 2013-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
TW201816844A (zh) * | 2004-03-25 | 2018-05-01 | 日商尼康股份有限公司 | 曝光裝置、曝光方法、及元件製造方法 |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8844461B2 (en) | 2007-04-16 | 2014-09-30 | Lam Research Corporation | Fluid handling system for wafer electroless plating and associated methods |
US8485120B2 (en) | 2007-04-16 | 2013-07-16 | Lam Research Corporation | Method and apparatus for wafer electroless plating |
US20060201425A1 (en) * | 2005-03-08 | 2006-09-14 | Applied Microstructures, Inc. | Precursor preparation for controlled deposition coatings |
US8813764B2 (en) * | 2009-05-29 | 2014-08-26 | Lam Research Corporation | Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer |
US7811423B2 (en) * | 2006-10-06 | 2010-10-12 | Lam Research Corporation | Proximity processing using controlled batch volume with an integrated proximity head |
JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
US8464736B1 (en) * | 2007-03-30 | 2013-06-18 | Lam Research Corporation | Reclaim chemistry |
US8141566B2 (en) * | 2007-06-19 | 2012-03-27 | Lam Research Corporation | System, method and apparatus for maintaining separation of liquids in a controlled meniscus |
JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
KR101679432B1 (ko) * | 2008-02-08 | 2016-12-06 | 램 리써치 코포레이션 | 메니스커스에 의한 웨이퍼 표면의 프로세싱에서 근접 헤드에 대한 실질적으로 균일한 유체 흐름 레이트를 위한 장치 |
US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
KR20100066631A (ko) * | 2008-12-10 | 2010-06-18 | 삼성전자주식회사 | 세정설비 및 그의 세정방법 |
US8317934B2 (en) * | 2009-05-13 | 2012-11-27 | Lam Research Corporation | Multi-stage substrate cleaning method and apparatus |
EP2315235B1 (en) * | 2009-10-21 | 2019-04-24 | IMEC vzw | Method and apparatus for cleaning a semiconductor substrate |
JP4927158B2 (ja) * | 2009-12-25 | 2012-05-09 | 東京エレクトロン株式会社 | 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置 |
US20120260517A1 (en) * | 2011-04-18 | 2012-10-18 | Lam Research Corporation | Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations |
CN102214559A (zh) * | 2011-05-23 | 2011-10-12 | 叶伟清 | 晶圆亲水面表面清洗方法 |
CN102194726A (zh) * | 2011-05-23 | 2011-09-21 | 叶伟清 | 晶圆表面局部定位采样方法 |
CN102214553A (zh) * | 2011-05-23 | 2011-10-12 | 叶伟清 | 晶圆端面清洗方法 |
CN102214558A (zh) * | 2011-05-23 | 2011-10-12 | 叶伟清 | 晶圆表面局部定位清洗方法 |
EP3900618A1 (en) * | 2014-10-17 | 2021-10-27 | G-Tech Medical, Inc. | Systems and methods for processing electromyographic signals of the gastrointestinal tract |
TWM522954U (zh) * | 2015-12-03 | 2016-06-01 | 財團法人工業技術研究院 | 電沉積設備 |
CN105977188A (zh) * | 2016-06-20 | 2016-09-28 | 刘玉忠 | 一种二极管油墨标记烘烤清洗装置 |
JP6916003B2 (ja) * | 2017-02-24 | 2021-08-11 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
KR102116534B1 (ko) * | 2018-06-25 | 2020-05-28 | 주식회사 에이치에스하이테크 | 기판 세정용 노즐 및 그 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142450A (ja) * | 2001-11-08 | 2003-05-16 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
JP2003151948A (ja) * | 2001-11-08 | 2003-05-23 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
WO2004030052A2 (en) * | 2002-09-30 | 2004-04-08 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
WO2004032160A2 (en) * | 2002-09-30 | 2004-04-15 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5601655A (en) * | 1995-02-14 | 1997-02-11 | Bok; Hendrik F. | Method of cleaning substrates |
JPH1133506A (ja) * | 1997-07-24 | 1999-02-09 | Tadahiro Omi | 流体処理装置及び洗浄処理システム |
US6398975B1 (en) * | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
JP2002075947A (ja) * | 2000-08-30 | 2002-03-15 | Alps Electric Co Ltd | ウェット処理装置 |
US6988327B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
KR101338797B1 (ko) * | 2002-09-30 | 2013-12-06 | 램 리써치 코포레이션 | 메니스커스, 진공, ipa증기, 건조 매니폴드를 이용한 기판처리시스템 |
US7329321B2 (en) * | 2002-09-30 | 2008-02-12 | Lam Research Corporation | Enhanced wafer cleaning method |
US7240679B2 (en) * | 2002-09-30 | 2007-07-10 | Lam Research Corporation | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7003899B1 (en) * | 2004-09-30 | 2006-02-28 | Lam Research Corporation | System and method for modulating flow through multiple ports in a proximity head |
-
2004
- 2004-09-30 US US10/957,260 patent/US7520285B2/en not_active Expired - Fee Related
-
2005
- 2005-09-21 SG SG200506095A patent/SG121162A1/en unknown
- 2005-09-27 TW TW094133482A patent/TWI278358B/zh not_active IP Right Cessation
- 2005-09-27 EP EP05256011.7A patent/EP1643541B1/en not_active Not-in-force
- 2005-09-29 MY MYPI20054608A patent/MY163666A/en unknown
- 2005-09-29 JP JP2005283367A patent/JP4578373B2/ja not_active Expired - Fee Related
- 2005-09-30 CN CN2005101283102A patent/CN1794420B/zh not_active Expired - Fee Related
- 2005-09-30 KR KR1020050092631A patent/KR101164826B1/ko active IP Right Grant
-
2009
- 2009-03-13 US US12/381,643 patent/US7862663B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142450A (ja) * | 2001-11-08 | 2003-05-16 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
JP2003151948A (ja) * | 2001-11-08 | 2003-05-23 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
WO2004030052A2 (en) * | 2002-09-30 | 2004-04-08 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
WO2004032160A2 (en) * | 2002-09-30 | 2004-04-15 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011507270A (ja) * | 2007-12-14 | 2011-03-03 | ラム リサーチ コーポレーション | 単相および二相の媒体による粒子除去のための装置 |
JP2011507269A (ja) * | 2007-12-14 | 2011-03-03 | ラム リサーチ コーポレーション | 単相および二相の媒体による粒子除去のための方法 |
JP2009240972A (ja) * | 2008-03-31 | 2009-10-22 | Jfe Steel Corp | 金属帯への塗装方法 |
JP2012520561A (ja) * | 2009-03-10 | 2012-09-06 | ラム リサーチ コーポレーション | パーティクル汚染物質除去の方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1794420A (zh) | 2006-06-28 |
KR101164826B1 (ko) | 2012-07-11 |
MY163666A (en) | 2017-10-13 |
US7862663B2 (en) | 2011-01-04 |
US20090176360A1 (en) | 2009-07-09 |
JP4578373B2 (ja) | 2010-11-10 |
TWI278358B (en) | 2007-04-11 |
EP1643541A3 (en) | 2011-03-09 |
SG121162A1 (en) | 2006-04-26 |
EP1643541B1 (en) | 2014-02-26 |
US20060005860A1 (en) | 2006-01-12 |
CN1794420B (zh) | 2010-11-03 |
KR20060051981A (ko) | 2006-05-19 |
US7520285B2 (en) | 2009-04-21 |
TW200628236A (en) | 2006-08-16 |
EP1643541A2 (en) | 2006-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4578373B2 (ja) | 基板処理装置 | |
JP4758694B2 (ja) | 近接型プロキシミティプロセスヘッド | |
JP5013685B2 (ja) | 基板処理においてメニスカスを用いるための装置および方法 | |
JP4892203B2 (ja) | 非親和性の障壁によるメニスカスの分離および閉じ込め | |
JP4589866B2 (ja) | メニスカス、真空、ipa蒸気、乾燥マニホルドを用いた基板処理システム | |
US7387689B2 (en) | Methods for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces | |
JP4676230B2 (ja) | 基板処理装置及び基板処理方法 | |
JP4759300B2 (ja) | 薄い高速流体層を使用してウェーハ表面を処理する方法及び装置 | |
JP4621055B2 (ja) | 基板とメニスカスとの境界面およびその取り扱い方法 | |
KR101118491B1 (ko) | 메니스커스, 진공, ipa증기, 건조 매니폴드를 이용한 기판처리시스템 | |
JP4559226B2 (ja) | ウェハ表面に近接して保持される複数の入口及び出口を使用して半導体ウェハ表面を乾燥させる方法及び装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060313 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070605 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090915 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091214 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091217 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100315 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100406 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100531 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100727 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100824 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4578373 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |