JP2007515761A - 二重周波数ｒｆ整合 - Google Patents

二重周波数ｒｆ整合 Download PDF

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Publication number
JP2007515761A
JP2007515761A JP2006545671A JP2006545671A JP2007515761A JP 2007515761 A JP2007515761 A JP 2007515761A JP 2006545671 A JP2006545671 A JP 2006545671A JP 2006545671 A JP2006545671 A JP 2006545671A JP 2007515761 A JP2007515761 A JP 2007515761A
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JP
Japan
Prior art keywords
power source
circuit
sub
impedance
matching
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JP2006545671A
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Japanese (ja)
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JP2007515761A5 (enExample
Inventor
スティーヴン， シー． シャンノン，
ジョン ホーランド，
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2007515761A publication Critical patent/JP2007515761A/ja
Publication of JP2007515761A5 publication Critical patent/JP2007515761A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006545671A 2003-12-18 2004-11-19 二重周波数ｒｆ整合 Pending JP2007515761A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53080703P 2003-12-18 2003-12-18
US10/823,371 US7879185B2 (en) 2003-12-18 2004-04-12 Dual frequency RF match
PCT/US2004/039081 WO2005066997A2 (en) 2003-12-18 2004-11-19 Dual frequency rf match

Publications (2)

Publication Number Publication Date
JP2007515761A true JP2007515761A (ja) 2007-06-14
JP2007515761A5 JP2007515761A5 (enExample) 2010-03-11

Family

ID=34681594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006545671A Pending JP2007515761A (ja) 2003-12-18 2004-11-19 二重周波数ｒｆ整合

Country Status (5)

Country Link
US (1) US7879185B2 (enExample)
JP (1) JP2007515761A (enExample)
KR (1) KR101027090B1 (enExample)
TW (1) TWI355015B (enExample)
WO (1) WO2005066997A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102480831A (zh) * 2010-11-26 2012-05-30 北京北方微电子基地设备工艺研究中心有限责任公司 下电极装置及半导体设备
JP2018022685A (ja) * 2016-07-25 2018-02-08 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 複数のステーションにおけるウエハの反りの制御
JP2019537831A (ja) * 2016-11-08 2019-12-26 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック 複数の周波数で発生器と負荷との間のインピーダンス整合をとるための回路、そのような回路を含むアセンブリ、および関連する使用
JP2020517154A (ja) * 2017-04-07 2020-06-11 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 周波数調整を用いたデュアルレベルパルス化のためのｒｆ整合回路網内の補助回路

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829471B2 (en) * 2005-07-29 2010-11-09 Applied Materials, Inc. Cluster tool and method for process integration in manufacturing of a photomask
US20070031609A1 (en) * 2005-07-29 2007-02-08 Ajay Kumar Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
CN100358099C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 等离子体处理装置
US8366829B2 (en) * 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
CN100362619C (zh) * 2005-08-05 2008-01-16 中微半导体设备(上海)有限公司 真空反应室的射频匹配耦合网络及其配置方法
US7375038B2 (en) * 2005-09-28 2008-05-20 Applied Materials, Inc. Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication
US8674255B1 (en) * 2005-12-08 2014-03-18 Lam Research Corporation Apparatus and method for controlling etch uniformity
US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
US20090004873A1 (en) * 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
CN101478857A (zh) * 2008-01-04 2009-07-08 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理装置
US7811410B2 (en) * 2008-06-19 2010-10-12 Lam Research Corporation Matching circuit for a complex radio frequency (RF) waveform
US7994872B2 (en) * 2008-07-21 2011-08-09 Applied Materials, Inc. Apparatus for multiple frequency power application
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
KR101151414B1 (ko) * 2010-02-23 2012-06-04 주식회사 플라즈마트 임피던스 정합 장치
US20120000888A1 (en) * 2010-06-30 2012-01-05 Applied Materials, Inc. Methods and apparatus for radio frequency (rf) plasma processing
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9368329B2 (en) * 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9043525B2 (en) * 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
CN104754851B (zh) * 2013-12-31 2017-10-20 北京北方华创微电子装备有限公司 多频匹配器及等离子体装置
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) * 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US9799491B2 (en) * 2015-10-29 2017-10-24 Applied Materials, Inc. Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
CN110870040B (zh) 2017-07-13 2022-05-03 应用材料公司 衬底处理方法和设备
KR102024185B1 (ko) * 2018-01-11 2019-09-23 (주)이큐글로벌 소스 매처
CN111092008A (zh) * 2018-10-24 2020-05-01 江苏鲁汶仪器有限公司 一种感应耦合等离子体刻蚀设备及刻蚀方法
TW202243549A (zh) 2021-04-22 2022-11-01 大陸商北京屹唐半導體科技股份有限公司 用於感應耦合電漿（ｉｃｐ）負載的雙頻匹配電路
JP7684000B2 (ja) * 2021-10-21 2025-05-27 東京エレクトロン株式会社 着火制御方法、成膜方法及び成膜装置
EP4215939B1 (en) * 2022-01-25 2025-05-28 Furuno Electric Co., Ltd. Amplifier circuit and sonar
KR20250021906A (ko) * 2023-08-07 2025-02-14 엠케이에스코리아 유한회사 Rf 전력과 dc 펄스 전압을 결합하여 부하에 전달하는 전력 전달 장치

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113599A (en) * 1981-01-06 1982-07-15 Kokusai Electric Co Ltd Automatic matching device for plasma generator
JPS60160620A (ja) * 1984-01-06 1985-08-22 テ−ガル・コ−ポレ−シヨン プラズマリアクタ装置
JPH06243992A (ja) * 1993-02-16 1994-09-02 Tokyo Electron Ltd プラズマ処理装置
JPH0955347A (ja) * 1995-02-15 1997-02-25 Applied Materials Inc 誘導結合プラズマ反応器のｒｆ電力ソースの自動周波数同調装置及び方法
JPH1041281A (ja) * 1996-07-23 1998-02-13 Tokyo Electron Ltd プラズマ処理装置
JPH11283926A (ja) * 1998-01-29 1999-10-15 Anelva Corp プラズマ処理装置
JP2000156370A (ja) * 1998-09-16 2000-06-06 Tokyo Electron Ltd プラズマ処理方法
JP2003092200A (ja) * 2000-12-12 2003-03-28 Canon Inc 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP2005056997A (ja) * 2003-08-01 2005-03-03 Tokyo Electron Ltd プラズマエッチング方法及びプラズマ処理装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US457961A (en) * 1891-08-18 Island
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5383019A (en) * 1990-03-23 1995-01-17 Fisons Plc Inductively coupled plasma spectrometers and radio-frequency power supply therefor
US5280154A (en) 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5273610A (en) * 1992-06-23 1993-12-28 Association Institutions For Material Sciences, Inc. Apparatus and method for determining power in plasma processing
US5512130A (en) * 1994-03-09 1996-04-30 Texas Instruments Incorporated Method and apparatus of etching a clean trench in a semiconductor material
JPH0897199A (ja) * 1994-09-22 1996-04-12 Toshiba Corp 絶縁膜の形成方法
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
US5689215A (en) * 1996-05-23 1997-11-18 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
JPH10241895A (ja) 1996-11-04 1998-09-11 Applied Materials Inc プラズマシース発生高調波をフィルタリングすることによるプラズマプロセス効率の改善
US5889252A (en) * 1996-12-19 1999-03-30 Lam Research Corporation Method of and apparatus for independently controlling electric parameters of an impedance matching network
TW434636B (en) * 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
US6259334B1 (en) * 1998-12-22 2001-07-10 Lam Research Corporation Methods for controlling an RF matching network
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
US6887339B1 (en) * 2000-09-20 2005-05-03 Applied Science And Technology, Inc. RF power supply with integrated matching network
JP2003073836A (ja) 2001-08-28 2003-03-12 Canon Inc 真空処理方法及び真空処理装置
US6887340B2 (en) 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113599A (en) * 1981-01-06 1982-07-15 Kokusai Electric Co Ltd Automatic matching device for plasma generator
JPS60160620A (ja) * 1984-01-06 1985-08-22 テ−ガル・コ−ポレ−シヨン プラズマリアクタ装置
JPH06243992A (ja) * 1993-02-16 1994-09-02 Tokyo Electron Ltd プラズマ処理装置
JPH0955347A (ja) * 1995-02-15 1997-02-25 Applied Materials Inc 誘導結合プラズマ反応器のｒｆ電力ソースの自動周波数同調装置及び方法
JPH1041281A (ja) * 1996-07-23 1998-02-13 Tokyo Electron Ltd プラズマ処理装置
JPH11283926A (ja) * 1998-01-29 1999-10-15 Anelva Corp プラズマ処理装置
JP2000156370A (ja) * 1998-09-16 2000-06-06 Tokyo Electron Ltd プラズマ処理方法
JP2003092200A (ja) * 2000-12-12 2003-03-28 Canon Inc 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP2005056997A (ja) * 2003-08-01 2005-03-03 Tokyo Electron Ltd プラズマエッチング方法及びプラズマ処理装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102480831A (zh) * 2010-11-26 2012-05-30 北京北方微电子基地设备工艺研究中心有限责任公司 下电极装置及半导体设备
JP2018022685A (ja) * 2016-07-25 2018-02-08 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 複数のステーションにおけるウエハの反りの制御
JP7037894B2 (ja) 2016-07-25 2022-03-17 ラム リサーチ コーポレーション 複数のステーションにおけるウエハの反りの制御
JP2019537831A (ja) * 2016-11-08 2019-12-26 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック 複数の周波数で発生器と負荷との間のインピーダンス整合をとるための回路、そのような回路を含むアセンブリ、および関連する使用
JP7097376B2 (ja) 2016-11-08 2022-07-07 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック 複数の周波数で発生器と負荷との間のインピーダンス整合をとるための回路、そのような回路を含むアセンブリ、および関連する使用
JP2020517154A (ja) * 2017-04-07 2020-06-11 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 周波数調整を用いたデュアルレベルパルス化のためのｒｆ整合回路網内の補助回路
JP7321938B2 (ja) 2017-04-07 2023-08-07 ラム リサーチ コーポレーション 周波数調整を用いたデュアルレベルパルス化のためのｒｆ整合回路網内の補助回路

Also Published As

Publication number Publication date
TWI355015B (en) 2011-12-21
US20050133163A1 (en) 2005-06-23
KR101027090B1 (ko) 2011-04-05
WO2005066997A2 (en) 2005-07-21
WO2005066997A3 (en) 2005-09-29
TW200522145A (en) 2005-07-01
KR20080086556A (ko) 2008-09-25
US7879185B2 (en) 2011-02-01

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