KR101027090B1 - 임피던스 정합 장치 - Google Patents

임피던스 정합 장치 Download PDF

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Publication number
KR101027090B1
KR101027090B1 KR1020087022027A KR20087022027A KR101027090B1 KR 101027090 B1 KR101027090 B1 KR 101027090B1 KR 1020087022027 A KR1020087022027 A KR 1020087022027A KR 20087022027 A KR20087022027 A KR 20087022027A KR 101027090 B1 KR101027090 B1 KR 101027090B1
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KR
South Korea
Prior art keywords
impedance
sources
subcircuit
frequency
variable
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Expired - Fee Related
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KR1020087022027A
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English (en)
Korean (ko)
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KR20080086556A (ko
Inventor
스티븐 씨 샨논
존 홀랜드
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20080086556A publication Critical patent/KR20080086556A/ko
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020087022027A 2003-12-18 2004-11-19 임피던스 정합 장치 Expired - Fee Related KR101027090B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US53080703P 2003-12-18 2003-12-18
US60/530,807 2003-12-18
US10/823,371 US7879185B2 (en) 2003-12-18 2004-04-12 Dual frequency RF match
US10/823,371 2004-04-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067014214A Division KR100902435B1 (ko) 2003-12-18 2004-11-19 임피던스 정합 장치

Publications (2)

Publication Number Publication Date
KR20080086556A KR20080086556A (ko) 2008-09-25
KR101027090B1 true KR101027090B1 (ko) 2011-04-05

Family

ID=34681594

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087022027A Expired - Fee Related KR101027090B1 (ko) 2003-12-18 2004-11-19 임피던스 정합 장치

Country Status (5)

Country Link
US (1) US7879185B2 (enExample)
JP (1) JP2007515761A (enExample)
KR (1) KR101027090B1 (enExample)
TW (1) TWI355015B (enExample)
WO (1) WO2005066997A2 (enExample)

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US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
CN104754851B (zh) * 2013-12-31 2017-10-20 北京北方华创微电子装备有限公司 多频匹配器及等离子体装置
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) * 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
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US10553465B2 (en) * 2016-07-25 2020-02-04 Lam Research Corporation Control of water bow in multiple stations
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US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
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CN111092008A (zh) * 2018-10-24 2020-05-01 江苏鲁汶仪器有限公司 一种感应耦合等离子体刻蚀设备及刻蚀方法
TW202243549A (zh) * 2021-04-22 2022-11-01 大陸商北京屹唐半導體科技股份有限公司 用於感應耦合電漿（ｉｃｐ）負載的雙頻匹配電路
JP7684000B2 (ja) * 2021-10-21 2025-05-27 東京エレクトロン株式会社 着火制御方法、成膜方法及び成膜装置
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Also Published As

Publication number Publication date
US20050133163A1 (en) 2005-06-23
TWI355015B (en) 2011-12-21
US7879185B2 (en) 2011-02-01
WO2005066997A3 (en) 2005-09-29
JP2007515761A (ja) 2007-06-14
WO2005066997A2 (en) 2005-07-21
TW200522145A (en) 2005-07-01
KR20080086556A (ko) 2008-09-25

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