TWI355015B - Dual frequency rf match - Google Patents
Dual frequency rf match Download PDFInfo
- Publication number
- TWI355015B TWI355015B TW093137328A TW93137328A TWI355015B TW I355015 B TWI355015 B TW I355015B TW 093137328 A TW093137328 A TW 093137328A TW 93137328 A TW93137328 A TW 93137328A TW I355015 B TWI355015 B TW I355015B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- source
- sub
- impedance
- matching
- Prior art date
Links
- 230000009977 dual effect Effects 0.000 title claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 claims 5
- 239000003990 capacitor Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/36—Circuit arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53080703P | 2003-12-18 | 2003-12-18 | |
| US10/823,371 US7879185B2 (en) | 2003-12-18 | 2004-04-12 | Dual frequency RF match |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200522145A TW200522145A (en) | 2005-07-01 |
| TWI355015B true TWI355015B (en) | 2011-12-21 |
Family
ID=34681594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093137328A TWI355015B (en) | 2003-12-18 | 2004-12-03 | Dual frequency rf match |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7879185B2 (enExample) |
| JP (1) | JP2007515761A (enExample) |
| KR (1) | KR101027090B1 (enExample) |
| TW (1) | TWI355015B (enExample) |
| WO (1) | WO2005066997A2 (enExample) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070031609A1 (en) * | 2005-07-29 | 2007-02-08 | Ajay Kumar | Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same |
| US7829471B2 (en) * | 2005-07-29 | 2010-11-09 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
| US8366829B2 (en) * | 2005-08-05 | 2013-02-05 | Advanced Micro-Fabrication Equipment, Inc. Asia | Multi-station decoupled reactive ion etch chamber |
| CN100362619C (zh) * | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
| CN100358099C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
| US7375038B2 (en) * | 2005-09-28 | 2008-05-20 | Applied Materials, Inc. | Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication |
| US8674255B1 (en) * | 2005-12-08 | 2014-03-18 | Lam Research Corporation | Apparatus and method for controlling etch uniformity |
| US7758763B2 (en) * | 2006-10-31 | 2010-07-20 | Applied Materials, Inc. | Plasma for resist removal and facet control of underlying features |
| US20090004873A1 (en) * | 2007-06-26 | 2009-01-01 | Intevac, Inc. | Hybrid etch chamber with decoupled plasma controls |
| CN101478857A (zh) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理装置 |
| US7811410B2 (en) * | 2008-06-19 | 2010-10-12 | Lam Research Corporation | Matching circuit for a complex radio frequency (RF) waveform |
| US7994872B2 (en) * | 2008-07-21 | 2011-08-09 | Applied Materials, Inc. | Apparatus for multiple frequency power application |
| US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
| KR101151414B1 (ko) * | 2010-02-23 | 2012-06-04 | 주식회사 플라즈마트 | 임피던스 정합 장치 |
| US20120000888A1 (en) * | 2010-06-30 | 2012-01-05 | Applied Materials, Inc. | Methods and apparatus for radio frequency (rf) plasma processing |
| CN102480831A (zh) * | 2010-11-26 | 2012-05-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 下电极装置及半导体设备 |
| US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
| US9530620B2 (en) | 2013-03-15 | 2016-12-27 | Lam Research Corporation | Dual control modes |
| US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
| US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US9368329B2 (en) * | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US9295148B2 (en) | 2012-12-14 | 2016-03-22 | Lam Research Corporation | Computation of statistics for statistical data decimation |
| US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
| US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US9408288B2 (en) | 2012-09-14 | 2016-08-02 | Lam Research Corporation | Edge ramping |
| US9043525B2 (en) * | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
| US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
| US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
| US9779196B2 (en) | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
| US9107284B2 (en) | 2013-03-13 | 2015-08-11 | Lam Research Corporation | Chamber matching using voltage control mode |
| US9119283B2 (en) | 2013-03-14 | 2015-08-25 | Lam Research Corporation | Chamber matching for power control mode |
| US9502221B2 (en) | 2013-07-26 | 2016-11-22 | Lam Research Corporation | Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
| CN104754851B (zh) * | 2013-12-31 | 2017-10-20 | 北京北方华创微电子装备有限公司 | 多频匹配器及等离子体装置 |
| US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
| US10950421B2 (en) * | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
| US9799491B2 (en) * | 2015-10-29 | 2017-10-24 | Applied Materials, Inc. | Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching |
| US10553465B2 (en) * | 2016-07-25 | 2020-02-04 | Lam Research Corporation | Control of water bow in multiple stations |
| FR3058602B1 (fr) * | 2016-11-08 | 2021-02-12 | Centre Nat Rech Scient | Circuit d'adaptation d'impedance entre un generateur et une charge a des frequences multiples, ensemble comportant un tel circuit et utlisation liee. |
| US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
| US10879044B2 (en) * | 2017-04-07 | 2020-12-29 | Lam Research Corporation | Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing |
| WO2019014002A1 (en) | 2017-07-13 | 2019-01-17 | Applied Materials, Inc. | METHOD AND APPARATUS FOR TREATING SUBSTRATE |
| KR102024185B1 (ko) * | 2018-01-11 | 2019-09-23 | (주)이큐글로벌 | 소스 매처 |
| CN111092008A (zh) * | 2018-10-24 | 2020-05-01 | 江苏鲁汶仪器有限公司 | 一种感应耦合等离子体刻蚀设备及刻蚀方法 |
| TW202243549A (zh) * | 2021-04-22 | 2022-11-01 | 大陸商北京屹唐半導體科技股份有限公司 | 用於感應耦合電漿(icp)負載的雙頻匹配電路 |
| JP7684000B2 (ja) * | 2021-10-21 | 2025-05-27 | 東京エレクトロン株式会社 | 着火制御方法、成膜方法及び成膜装置 |
| EP4215939B1 (en) * | 2022-01-25 | 2025-05-28 | Furuno Electric Co., Ltd. | Amplifier circuit and sonar |
| KR20250021906A (ko) * | 2023-08-07 | 2025-02-14 | 엠케이에스코리아 유한회사 | Rf 전력과 dc 펄스 전압을 결합하여 부하에 전달하는 전력 전달 장치 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US457961A (en) * | 1891-08-18 | Island | ||
| JPS57113599A (en) * | 1981-01-06 | 1982-07-15 | Kokusai Electric Co Ltd | Automatic matching device for plasma generator |
| US4579618A (en) | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
| DE3480573D1 (en) * | 1984-01-06 | 1989-12-28 | Tegal Corp | Single electrode, multiple frequency plasma apparatus |
| US4585516A (en) | 1985-03-04 | 1986-04-29 | Tegal Corporation | Variable duty cycle, multiple frequency, plasma reactor |
| US5316616A (en) | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
| US5556501A (en) | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
| US5383019A (en) | 1990-03-23 | 1995-01-17 | Fisons Plc | Inductively coupled plasma spectrometers and radio-frequency power supply therefor |
| US5280154A (en) | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
| US5273610A (en) | 1992-06-23 | 1993-12-28 | Association Institutions For Material Sciences, Inc. | Apparatus and method for determining power in plasma processing |
| JP3251087B2 (ja) * | 1993-02-16 | 2002-01-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5512130A (en) | 1994-03-09 | 1996-04-30 | Texas Instruments Incorporated | Method and apparatus of etching a clean trench in a semiconductor material |
| JPH0897199A (ja) * | 1994-09-22 | 1996-04-12 | Toshiba Corp | 絶縁膜の形成方法 |
| US5688357A (en) * | 1995-02-15 | 1997-11-18 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
| US6252354B1 (en) | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
| US5689215A (en) | 1996-05-23 | 1997-11-18 | Lam Research Corporation | Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor |
| US6500314B1 (en) | 1996-07-03 | 2002-12-31 | Tegal Corporation | Plasma etch reactor and method |
| JP3220383B2 (ja) | 1996-07-23 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
| JPH10241895A (ja) | 1996-11-04 | 1998-09-11 | Applied Materials Inc | プラズマシース発生高調波をフィルタリングすることによるプラズマプロセス効率の改善 |
| US5889252A (en) | 1996-12-19 | 1999-03-30 | Lam Research Corporation | Method of and apparatus for independently controlling electric parameters of an impedance matching network |
| JP4283360B2 (ja) * | 1998-01-29 | 2009-06-24 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
| TW434636B (en) | 1998-07-13 | 2001-05-16 | Applied Komatsu Technology Inc | RF matching network with distributed outputs |
| US6642149B2 (en) | 1998-09-16 | 2003-11-04 | Tokyo Electron Limited | Plasma processing method |
| JP2000156370A (ja) * | 1998-09-16 | 2000-06-06 | Tokyo Electron Ltd | プラズマ処理方法 |
| US6259334B1 (en) | 1998-12-22 | 2001-07-10 | Lam Research Corporation | Methods for controlling an RF matching network |
| US6507155B1 (en) | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
| US6887339B1 (en) * | 2000-09-20 | 2005-05-03 | Applied Science And Technology, Inc. | RF power supply with integrated matching network |
| JP3897582B2 (ja) | 2000-12-12 | 2007-03-28 | キヤノン株式会社 | 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置 |
| JP2003073836A (ja) | 2001-08-28 | 2003-03-12 | Canon Inc | 真空処理方法及び真空処理装置 |
| US6887340B2 (en) | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
| JP3905870B2 (ja) * | 2003-08-01 | 2007-04-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2004
- 2004-04-12 US US10/823,371 patent/US7879185B2/en not_active Expired - Fee Related
- 2004-11-19 KR KR1020087022027A patent/KR101027090B1/ko not_active Expired - Fee Related
- 2004-11-19 WO PCT/US2004/039081 patent/WO2005066997A2/en not_active Ceased
- 2004-11-19 JP JP2006545671A patent/JP2007515761A/ja active Pending
- 2004-12-03 TW TW093137328A patent/TWI355015B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7879185B2 (en) | 2011-02-01 |
| US20050133163A1 (en) | 2005-06-23 |
| TW200522145A (en) | 2005-07-01 |
| JP2007515761A (ja) | 2007-06-14 |
| WO2005066997A2 (en) | 2005-07-21 |
| KR20080086556A (ko) | 2008-09-25 |
| WO2005066997A3 (en) | 2005-09-29 |
| KR101027090B1 (ko) | 2011-04-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |