JP2007512680A - 薄膜トランジスタの封止方法 - Google Patents

薄膜トランジスタの封止方法 Download PDF

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Publication number
JP2007512680A
JP2007512680A JP2006523830A JP2006523830A JP2007512680A JP 2007512680 A JP2007512680 A JP 2007512680A JP 2006523830 A JP2006523830 A JP 2006523830A JP 2006523830 A JP2006523830 A JP 2006523830A JP 2007512680 A JP2007512680 A JP 2007512680A
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semiconductor layer
aperture mask
layer
pattern
thin film
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Pending
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JP2006523830A
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Japanese (ja)
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JP2007512680A5 (https=
Inventor
ブイ． マイレス，ダウン
ダブリュ． ケリー，トミー
エー． ハーゼ，マイケル
エフ． バウド，ポール
ディー． タイス，スティーブン
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2007512680A publication Critical patent/JP2007512680A/ja
Publication of JP2007512680A5 publication Critical patent/JP2007512680A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2006523830A 2003-08-18 2004-06-10 薄膜トランジスタの封止方法 Pending JP2007512680A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/642,919 US20070178710A1 (en) 2003-08-18 2003-08-18 Method for sealing thin film transistors
PCT/US2004/018681 WO2005020343A1 (en) 2003-08-18 2004-06-10 Method for sealing thin film transistors

Publications (2)

Publication Number Publication Date
JP2007512680A true JP2007512680A (ja) 2007-05-17
JP2007512680A5 JP2007512680A5 (https=) 2007-07-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006523830A Pending JP2007512680A (ja) 2003-08-18 2004-06-10 薄膜トランジスタの封止方法

Country Status (6)

Country Link
US (1) US20070178710A1 (https=)
EP (1) EP1656695A1 (https=)
JP (1) JP2007512680A (https=)
KR (1) KR20060079195A (https=)
CN (1) CN1839491A (https=)
WO (1) WO2005020343A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103921A (ja) * 2005-09-06 2007-04-19 Canon Inc 半導体素子
JP2008270744A (ja) * 2007-03-28 2008-11-06 Toppan Printing Co Ltd 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ
WO2010137664A1 (ja) * 2009-05-28 2010-12-02 帝人株式会社 アルキルシラン積層体及びその製造方法、並びに薄膜トランジスタ
JP2013545286A (ja) * 2010-10-07 2013-12-19 ジョージア・テック・リサーチ・コーポレーション 電界効果トランジスタおよびその製造方法

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KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
DE102004052266A1 (de) * 2004-10-27 2006-06-01 Infineon Technologies Ag Integrierte Analogschaltung in Schaltkondesatortechnik sowie Verfahren zu deren Herstellung
US7282735B2 (en) * 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
WO2007003502A2 (de) * 2005-07-01 2007-01-11 Siemens Aktiengesellschaft Parylen-beschichtung und verfahren zum herstellen einer parylen-beschichtung
KR101172666B1 (ko) * 2005-09-29 2012-08-08 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
KR101219046B1 (ko) * 2005-11-17 2013-01-08 삼성디스플레이 주식회사 표시장치와 이의 제조방법
WO2007075965A2 (en) 2005-12-20 2007-07-05 Northwestern University Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films
JP5216276B2 (ja) * 2006-08-30 2013-06-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7651896B2 (en) * 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI323039B (en) * 2006-10-24 2010-04-01 Micro-casting lithography and method for fabrication of organic thin film transistor
JP5151122B2 (ja) * 2006-11-22 2013-02-27 ソニー株式会社 電極被覆材料、電極構造体、及び、半導体装置
US8173906B2 (en) 2007-02-07 2012-05-08 Raytheon Company Environmental protection coating system and method
US7767589B2 (en) 2007-02-07 2010-08-03 Raytheon Company Passivation layer for a circuit device and method of manufacture
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
KR101595470B1 (ko) * 2009-12-01 2016-02-18 엘지디스플레이 주식회사 유기발광 표시장치의 제조방법
US8875067B2 (en) * 2013-03-15 2014-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Reusable cut mask for multiple layers
KR102636749B1 (ko) * 2016-11-28 2024-02-14 엘지디스플레이 주식회사 유기발광소자를 이용한 조명장치 및 그 제조방법
CN106847741B (zh) * 2016-12-30 2019-11-22 深圳市华星光电技术有限公司 一种薄膜晶体管阵列基板制造方法、真空气相蒸发台及其控制方法
KR102271091B1 (ko) * 2020-03-04 2021-06-29 성균관대학교산학협력단 비휘발성 메모리 소자 및 이의 제조 방법
CN113241422B (zh) * 2021-06-17 2025-03-21 京东方科技集团股份有限公司 显示基板和显示装置

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JP2000173770A (ja) * 1998-10-13 2000-06-23 Sony Internatl Europ Gmbh アクティブマトリクス方式表示装置及びその製造方法
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JPS6242564A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JPH01179366A (ja) * 1987-12-29 1989-07-17 Seikosha Co Ltd 薄膜トランジスタアレイ基板の製造方法
JPH10270712A (ja) * 1997-03-25 1998-10-09 Internatl Business Mach Corp <Ibm> 薄膜トランジスタ・デバイスの構造
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103921A (ja) * 2005-09-06 2007-04-19 Canon Inc 半導体素子
JP2008270744A (ja) * 2007-03-28 2008-11-06 Toppan Printing Co Ltd 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ
WO2010137664A1 (ja) * 2009-05-28 2010-12-02 帝人株式会社 アルキルシラン積層体及びその製造方法、並びに薄膜トランジスタ
KR20120031000A (ko) * 2009-05-28 2012-03-29 데이진 가부시키가이샤 알킬실란 적층체 및 그 제조 방법, 그리고 박막 트랜지스터
US8614445B2 (en) 2009-05-28 2013-12-24 Teijin Limited Alkylsilane laminate, production method thereof and thin-film transistor
KR101643442B1 (ko) 2009-05-28 2016-07-27 데이진 가부시키가이샤 알킬실란 적층체 및 그 제조 방법, 그리고 박막 트랜지스터
JP2013545286A (ja) * 2010-10-07 2013-12-19 ジョージア・テック・リサーチ・コーポレーション 電界効果トランジスタおよびその製造方法

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Publication number Publication date
CN1839491A (zh) 2006-09-27
US20070178710A1 (en) 2007-08-02
WO2005020343A1 (en) 2005-03-03
EP1656695A1 (en) 2006-05-17
KR20060079195A (ko) 2006-07-05

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