KR20060079195A - 박막 트랜지스터의 밀봉 방법 - Google Patents

박막 트랜지스터의 밀봉 방법 Download PDF

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Publication number
KR20060079195A
KR20060079195A KR1020067003277A KR20067003277A KR20060079195A KR 20060079195 A KR20060079195 A KR 20060079195A KR 1020067003277 A KR1020067003277 A KR 1020067003277A KR 20067003277 A KR20067003277 A KR 20067003277A KR 20060079195 A KR20060079195 A KR 20060079195A
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South Korea
Prior art keywords
semiconductor layer
sealing material
layer
pattern
mask
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Withdrawn
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KR1020067003277A
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English (en)
Korean (ko)
Inventor
던 브이. 머이레스
토미 더블유. 켈리
마이클 에이. 하세
폴 에프. 버드
스티븐 디. 테이스
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20060079195A publication Critical patent/KR20060079195A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
KR1020067003277A 2003-08-18 2004-06-10 박막 트랜지스터의 밀봉 방법 Withdrawn KR20060079195A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/642,919 US20070178710A1 (en) 2003-08-18 2003-08-18 Method for sealing thin film transistors
US10/642,919 2003-08-18

Publications (1)

Publication Number Publication Date
KR20060079195A true KR20060079195A (ko) 2006-07-05

Family

ID=34216368

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067003277A Withdrawn KR20060079195A (ko) 2003-08-18 2004-06-10 박막 트랜지스터의 밀봉 방법

Country Status (6)

Country Link
US (1) US20070178710A1 (https=)
EP (1) EP1656695A1 (https=)
JP (1) JP2007512680A (https=)
KR (1) KR20060079195A (https=)
CN (1) CN1839491A (https=)
WO (1) WO2005020343A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110061118A (ko) * 2009-12-01 2011-06-09 엘지디스플레이 주식회사 유기발광 표시장치의 제조방법
KR101322192B1 (ko) * 2006-08-30 2013-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR102271091B1 (ko) * 2020-03-04 2021-06-29 성균관대학교산학협력단 비휘발성 메모리 소자 및 이의 제조 방법

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KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
DE102004052266A1 (de) * 2004-10-27 2006-06-01 Infineon Technologies Ag Integrierte Analogschaltung in Schaltkondesatortechnik sowie Verfahren zu deren Herstellung
US7282735B2 (en) * 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
WO2007003502A2 (de) * 2005-07-01 2007-01-11 Siemens Aktiengesellschaft Parylen-beschichtung und verfahren zum herstellen einer parylen-beschichtung
JP5188046B2 (ja) * 2005-09-06 2013-04-24 キヤノン株式会社 半導体素子
KR101172666B1 (ko) * 2005-09-29 2012-08-08 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
KR101219046B1 (ko) * 2005-11-17 2013-01-08 삼성디스플레이 주식회사 표시장치와 이의 제조방법
WO2007075965A2 (en) 2005-12-20 2007-07-05 Northwestern University Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films
JP5216276B2 (ja) * 2006-08-30 2013-06-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI323039B (en) * 2006-10-24 2010-04-01 Micro-casting lithography and method for fabrication of organic thin film transistor
JP5151122B2 (ja) * 2006-11-22 2013-02-27 ソニー株式会社 電極被覆材料、電極構造体、及び、半導体装置
US8173906B2 (en) 2007-02-07 2012-05-08 Raytheon Company Environmental protection coating system and method
US7767589B2 (en) 2007-02-07 2010-08-03 Raytheon Company Passivation layer for a circuit device and method of manufacture
JP5286826B2 (ja) * 2007-03-28 2013-09-11 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ
CN102449771B (zh) * 2009-05-28 2014-12-31 帝人株式会社 烷基硅烷层叠体及其制造方法、以及薄膜晶体管
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
JP6061858B2 (ja) * 2010-10-07 2017-01-18 ジョージア・テック・リサーチ・コーポレーション 電界効果トランジスタおよびその製造方法
US8875067B2 (en) * 2013-03-15 2014-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Reusable cut mask for multiple layers
KR102636749B1 (ko) * 2016-11-28 2024-02-14 엘지디스플레이 주식회사 유기발광소자를 이용한 조명장치 및 그 제조방법
CN106847741B (zh) * 2016-12-30 2019-11-22 深圳市华星光电技术有限公司 一种薄膜晶体管阵列基板制造方法、真空气相蒸发台及其控制方法
CN113241422B (zh) * 2021-06-17 2025-03-21 京东方科技集团股份有限公司 显示基板和显示装置

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Publication number Priority date Publication date Assignee Title
KR101322192B1 (ko) * 2006-08-30 2013-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
US8659014B2 (en) 2006-08-30 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20110061118A (ko) * 2009-12-01 2011-06-09 엘지디스플레이 주식회사 유기발광 표시장치의 제조방법
KR102271091B1 (ko) * 2020-03-04 2021-06-29 성균관대학교산학협력단 비휘발성 메모리 소자 및 이의 제조 방법

Also Published As

Publication number Publication date
CN1839491A (zh) 2006-09-27
JP2007512680A (ja) 2007-05-17
US20070178710A1 (en) 2007-08-02
WO2005020343A1 (en) 2005-03-03
EP1656695A1 (en) 2006-05-17

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