JP2007508307A5 - - Google Patents
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- Publication number
- JP2007508307A5 JP2007508307A5 JP2006534267A JP2006534267A JP2007508307A5 JP 2007508307 A5 JP2007508307 A5 JP 2007508307A5 JP 2006534267 A JP2006534267 A JP 2006534267A JP 2006534267 A JP2006534267 A JP 2006534267A JP 2007508307 A5 JP2007508307 A5 JP 2007508307A5
- Authority
- JP
- Japan
- Prior art keywords
- hydrazide
- group
- alkyl
- silicon
- different
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 125000000217 alkyl group Chemical group 0.000 claims description 26
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 125000005913 (C3-C6) cycloalkyl group Chemical group 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 13
- 125000000524 functional group Chemical group 0.000 claims description 12
- 125000003282 alkyl amino group Chemical group 0.000 claims description 9
- 125000004663 dialkyl amino group Chemical group 0.000 claims description 9
- 125000000623 heterocyclic group Chemical group 0.000 claims description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- 150000004756 silanes Chemical class 0.000 claims description 3
- -1 silane compound Chemical group 0.000 claims 32
- 229910000077 silane Inorganic materials 0.000 claims 17
- 125000001424 substituent group Chemical group 0.000 claims 15
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 229910052710 silicon Inorganic materials 0.000 claims 9
- 239000010703 silicon Substances 0.000 claims 9
- 150000001875 compounds Chemical class 0.000 claims 7
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 150000003377 silicon compounds Chemical class 0.000 claims 4
- 229910008045 Si-Si Inorganic materials 0.000 claims 3
- 229910006411 Si—Si Inorganic materials 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 230000008018 melting Effects 0.000 claims 3
- 238000002844 melting Methods 0.000 claims 3
- 238000004377 microelectronic Methods 0.000 claims 3
- 230000008016 vaporization Effects 0.000 claims 3
- 238000009834 vaporization Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims 1
- 125000001475 halogen functional group Chemical group 0.000 claims 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 0 *N(*)C1=CC1 Chemical compound *N(*)C1=CC1 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical class [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/683,501 US7579496B2 (en) | 2003-10-10 | 2003-10-10 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
| PCT/US2004/032843 WO2005038871A2 (en) | 2003-10-10 | 2004-10-06 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007508307A JP2007508307A (ja) | 2007-04-05 |
| JP2007508307A5 true JP2007508307A5 (enExample) | 2007-12-13 |
Family
ID=34422750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006534267A Withdrawn JP2007508307A (ja) | 2003-10-10 | 2004-10-06 | モノシラン誘導体またはジシラン誘導体、および、それを用いたシリコン含有膜の低温蒸着法 |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US7579496B2 (enExample) |
| JP (1) | JP2007508307A (enExample) |
| GB (1) | GB2423084A (enExample) |
| WO (1) | WO2005038871A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7446217B2 (en) * | 2002-11-14 | 2008-11-04 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
| US7531679B2 (en) * | 2002-11-14 | 2009-05-12 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
| US7579496B2 (en) * | 2003-10-10 | 2009-08-25 | Advanced Technology Materials, Inc. | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
| US7601860B2 (en) | 2003-10-10 | 2009-10-13 | Advanced Technology Materials, Inc. | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films |
| US20050227017A1 (en) * | 2003-10-31 | 2005-10-13 | Yoshihide Senzaki | Low temperature deposition of silicon nitride |
| US8101788B2 (en) * | 2006-09-29 | 2012-01-24 | Air Liquide Electronics U.S. Lp | Silicon precursors and method for low temperature CVD of silicon-containing films |
| KR20100016477A (ko) * | 2007-04-12 | 2010-02-12 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Ａｌｄ/ｃｖｄ용의 지르코늄, 하프늄, 티타늄 및 규소 전구체 |
| KR101593352B1 (ko) * | 2007-06-28 | 2016-02-15 | 인티그리스, 인코포레이티드 | 이산화규소 간극 충전용 전구체 |
| US8580993B2 (en) * | 2008-11-12 | 2013-11-12 | Air Products And Chemicals, Inc. | Amino vinylsilane precursors for stressed SiN films |
| US8889235B2 (en) * | 2009-05-13 | 2014-11-18 | Air Products And Chemicals, Inc. | Dielectric barrier deposition using nitrogen containing precursor |
| KR101085242B1 (ko) | 2010-03-17 | 2011-11-22 | 엘에스엠트론 주식회사 | 실란 커플링제, 이를 포함하는 동박 및 그 표면처리방법 |
| US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
| US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| NL2009754C2 (en) | 2012-11-05 | 2014-05-08 | M4Si B V | Protective cover for a copper containing conductor. |
| JP5925673B2 (ja) * | 2012-12-27 | 2016-05-25 | 東京エレクトロン株式会社 | シリコン膜の成膜方法および成膜装置 |
| US9796739B2 (en) | 2013-06-26 | 2017-10-24 | Versum Materials Us, Llc | AZA-polysilane precursors and methods for depositing films comprising same |
| TW201522696A (zh) * | 2013-11-01 | 2015-06-16 | Applied Materials Inc | 使用遠端電漿ｃｖｄ技術的低溫氮化矽膜 |
| US11549181B2 (en) | 2013-11-22 | 2023-01-10 | Applied Materials, Inc. | Methods for atomic layer deposition of SiCO(N) using halogenated silylamides |
| US20150303060A1 (en) | 2014-04-16 | 2015-10-22 | Samsung Electronics Co., Ltd. | Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same |
| TWI706957B (zh) | 2015-03-30 | 2020-10-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| TWI724141B (zh) | 2016-03-23 | 2021-04-11 | 法商液態空氣喬治斯克勞帝方法硏究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
| US11049714B2 (en) * | 2017-09-19 | 2021-06-29 | Versum Materials Us, Llc | Silyl substituted organoamines as precursors for high growth rate silicon-containing films |
| CN108059133A (zh) * | 2017-12-11 | 2018-05-22 | 宁波爱克创威新材料科技有限公司 | 纳米氮化硅及其制备方法 |
| US11186909B2 (en) * | 2019-08-26 | 2021-11-30 | Applied Materials, Inc. | Methods of depositing low-K films |
| US11492364B2 (en) * | 2020-03-31 | 2022-11-08 | Entegris, Inc. | Silicon hydrazido precursor compounds |
| US11447865B2 (en) | 2020-11-17 | 2022-09-20 | Applied Materials, Inc. | Deposition of low-κ films |
| JP2024505193A (ja) * | 2021-01-26 | 2024-02-05 | インテグリス・インコーポレーテッド | 高スループット堆積方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5204098A (en) * | 1988-02-16 | 1993-04-20 | The United States Of America As Represented By The Department Of Health And Human Services | Polysaccharide-protein conjugates |
| FR2678621A1 (fr) | 1991-07-02 | 1993-01-08 | Atochem | Procede de preparation de ceramiques en nitrure de bore et de leurs precurseurs a partir de derives de l'hydrazine et les precurseurs ainsi mis en óoeuvre. |
| US5204141A (en) | 1991-09-18 | 1993-04-20 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources |
| FR2693204A1 (fr) * | 1992-08-27 | 1994-01-07 | Atochem Elf Sa | Procédé de préparation en milieu solvant de polysilylhydrazines. |
| US5424095A (en) | 1994-03-07 | 1995-06-13 | Eniricerche S.P.A. | Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors |
| JPH07335753A (ja) * | 1994-06-06 | 1995-12-22 | Sharp Corp | 半導体装置及びその製造方法 |
| JPH0822986A (ja) | 1994-07-05 | 1996-01-23 | Sony Corp | 絶縁膜の成膜方法 |
| JP3282769B2 (ja) | 1994-07-12 | 2002-05-20 | ソニー株式会社 | 半導体装置の製造方法 |
| TW285753B (enExample) | 1995-01-04 | 1996-09-11 | Air Prod & Chem | |
| US5939333A (en) * | 1996-05-30 | 1999-08-17 | Micron Technology, Inc. | Silicon nitride deposition method |
| US6383955B1 (en) * | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
| JP2000080476A (ja) | 1998-06-26 | 2000-03-21 | Toshiba Corp | 気相成長方法および気相成長装置およびハロゲン化アンモニウム除去装置 |
| US6365231B2 (en) * | 1998-06-26 | 2002-04-02 | Kabushiki Kaisha Toshiba | Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process |
| US6013235A (en) | 1999-07-19 | 2000-01-11 | Dow Corning Corporation | Conversion of direct process high-boiling residue to monosilanes |
| KR100803770B1 (ko) * | 2000-03-07 | 2008-02-15 | 에이에스엠 인터내셔널 엔.브이. | 구배（ｇｒａｄｅｄ）박막 |
| US6630413B2 (en) | 2000-04-28 | 2003-10-07 | Asm Japan K.K. | CVD syntheses of silicon nitride materials |
| JP4116283B2 (ja) * | 2001-11-30 | 2008-07-09 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法 |
| JP4021653B2 (ja) * | 2001-11-30 | 2007-12-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ｃｖｄ法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
| US7531679B2 (en) | 2002-11-14 | 2009-05-12 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
| US7446217B2 (en) | 2002-11-14 | 2008-11-04 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
| US7132723B2 (en) | 2002-11-14 | 2006-11-07 | Raytheon Company | Micro electro-mechanical system device with piezoelectric thin film actuator |
| US7972663B2 (en) * | 2002-12-20 | 2011-07-05 | Applied Materials, Inc. | Method and apparatus for forming a high quality low temperature silicon nitride layer |
| US7172792B2 (en) * | 2002-12-20 | 2007-02-06 | Applied Materials, Inc. | Method for forming a high quality low temperature silicon nitride film |
| US7122222B2 (en) | 2003-01-23 | 2006-10-17 | Air Products And Chemicals, Inc. | Precursors for depositing silicon containing films and processes thereof |
| US7138332B2 (en) * | 2003-07-09 | 2006-11-21 | Asm Japan K.K. | Method of forming silicon carbide films |
| US7601860B2 (en) | 2003-10-10 | 2009-10-13 | Advanced Technology Materials, Inc. | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films |
| US7579496B2 (en) | 2003-10-10 | 2009-08-25 | Advanced Technology Materials, Inc. | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
-
2003
- 2003-10-10 US US10/683,501 patent/US7579496B2/en not_active Expired - Lifetime
-
2004
- 2004-10-06 JP JP2006534267A patent/JP2007508307A/ja not_active Withdrawn
- 2004-10-06 WO PCT/US2004/032843 patent/WO2005038871A2/en not_active Ceased
- 2004-10-06 GB GB0607259A patent/GB2423084A/en not_active Withdrawn
-
2008
- 2008-01-24 US US12/019,557 patent/US7863203B2/en not_active Expired - Lifetime
-
2011
- 2011-01-04 US US12/984,346 patent/US8242032B2/en not_active Expired - Fee Related
-
2012
- 2012-02-09 US US13/369,810 patent/US8541318B2/en not_active Expired - Fee Related
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