GB2423084A - Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same - Google Patents

Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Download PDF

Info

Publication number
GB2423084A
GB2423084A GB0607259A GB0607259A GB2423084A GB 2423084 A GB2423084 A GB 2423084A GB 0607259 A GB0607259 A GB 0607259A GB 0607259 A GB0607259 A GB 0607259A GB 2423084 A GB2423084 A GB 2423084A
Authority
GB
United Kingdom
Prior art keywords
silicon
low temperature
containing films
monosilane
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0607259A
Other languages
English (en)
Other versions
GB0607259D0 (en
Inventor
Ziyun Wang
Chongying Xu
Thomas H Baum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of GB0607259D0 publication Critical patent/GB0607259D0/en
Publication of GB2423084A publication Critical patent/GB2423084A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/025—Silicon compounds without C-silicon linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
GB0607259A 2003-10-10 2004-10-06 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Withdrawn GB2423084A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/683,501 US7579496B2 (en) 2003-10-10 2003-10-10 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
PCT/US2004/032843 WO2005038871A2 (en) 2003-10-10 2004-10-06 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

Publications (2)

Publication Number Publication Date
GB0607259D0 GB0607259D0 (en) 2006-05-17
GB2423084A true GB2423084A (en) 2006-08-16

Family

ID=34422750

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0607259A Withdrawn GB2423084A (en) 2003-10-10 2004-10-06 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

Country Status (4)

Country Link
US (4) US7579496B2 (enExample)
JP (1) JP2007508307A (enExample)
GB (1) GB2423084A (enExample)
WO (1) WO2005038871A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7446217B2 (en) * 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7531679B2 (en) * 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7601860B2 (en) 2003-10-10 2009-10-13 Advanced Technology Materials, Inc. Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
US7579496B2 (en) * 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US20050227017A1 (en) * 2003-10-31 2005-10-13 Yoshihide Senzaki Low temperature deposition of silicon nitride
US8101788B2 (en) * 2006-09-29 2012-01-24 Air Liquide Electronics U.S. Lp Silicon precursors and method for low temperature CVD of silicon-containing films
WO2008128141A2 (en) * 2007-04-12 2008-10-23 Advanced Technology Materials, Inc. Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd
WO2009006272A1 (en) 2007-06-28 2009-01-08 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
US8580993B2 (en) * 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films
US8889235B2 (en) * 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
KR101085242B1 (ko) 2010-03-17 2011-11-22 엘에스엠트론 주식회사 실란 커플링제, 이를 포함하는 동박 및 그 표면처리방법
WO2013177326A1 (en) 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
NL2009754C2 (en) 2012-11-05 2014-05-08 M4Si B V Protective cover for a copper containing conductor.
JP5925673B2 (ja) * 2012-12-27 2016-05-25 東京エレクトロン株式会社 シリコン膜の成膜方法および成膜装置
US9796739B2 (en) * 2013-06-26 2017-10-24 Versum Materials Us, Llc AZA-polysilane precursors and methods for depositing films comprising same
TW201522696A (zh) * 2013-11-01 2015-06-16 Applied Materials Inc 使用遠端電漿ｃｖｄ技術的低溫氮化矽膜
US11549181B2 (en) 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
US20150303060A1 (en) 2014-04-16 2015-10-22 Samsung Electronics Co., Ltd. Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
TWI706957B (zh) 2015-03-30 2020-10-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
TWI753794B (zh) * 2016-03-23 2022-01-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 形成含矽膜之組成物及其製法與用途
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
CN108059133A (zh) * 2017-12-11 2018-05-22 宁波爱克创威新材料科技有限公司 纳米氮化硅及其制备方法
US11186909B2 (en) * 2019-08-26 2021-11-30 Applied Materials, Inc. Methods of depositing low-K films
US11492364B2 (en) * 2020-03-31 2022-11-08 Entegris, Inc. Silicon hydrazido precursor compounds
US11447865B2 (en) 2020-11-17 2022-09-20 Applied Materials, Inc. Deposition of low-κ films
EP4284959A4 (en) * 2021-01-26 2025-04-30 Entegris, Inc. High throughput deposition process

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204098A (en) * 1988-02-16 1993-04-20 The United States Of America As Represented By The Department Of Health And Human Services Polysaccharide-protein conjugates
FR2678621A1 (fr) 1991-07-02 1993-01-08 Atochem Procede de preparation de ceramiques en nitrure de bore et de leurs precurseurs a partir de derives de l'hydrazine et les precurseurs ainsi mis en óoeuvre.
US5204141A (en) 1991-09-18 1993-04-20 Air Products And Chemicals, Inc. Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources
FR2693204A1 (fr) * 1992-08-27 1994-01-07 Atochem Elf Sa Procédé de préparation en milieu solvant de polysilylhydrazines.
US5424095A (en) 1994-03-07 1995-06-13 Eniricerche S.P.A. Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors
JPH07335753A (ja) * 1994-06-06 1995-12-22 Sharp Corp 半導体装置及びその製造方法
JPH0822986A (ja) 1994-07-05 1996-01-23 Sony Corp 絶縁膜の成膜方法
JP3282769B2 (ja) 1994-07-12 2002-05-20 ソニー株式会社 半導体装置の製造方法
TW285753B (enExample) 1995-01-04 1996-09-11 Air Prod & Chem
US5939333A (en) * 1996-05-30 1999-08-17 Micron Technology, Inc. Silicon nitride deposition method
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
US6365231B2 (en) * 1998-06-26 2002-04-02 Kabushiki Kaisha Toshiba Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process
JP2000080476A (ja) 1998-06-26 2000-03-21 Toshiba Corp 気相成長方法および気相成長装置およびハロゲン化アンモニウム除去装置
US6013235A (en) 1999-07-19 2000-01-11 Dow Corning Corporation Conversion of direct process high-boiling residue to monosilanes
EP1266054B1 (en) * 2000-03-07 2006-12-20 Asm International N.V. Graded thin films
US6630413B2 (en) 2000-04-28 2003-10-07 Asm Japan K.K. CVD syntheses of silicon nitride materials
JP4021653B2 (ja) 2001-11-30 2007-12-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｃｖｄ法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
JP4116283B2 (ja) 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
US7132723B2 (en) 2002-11-14 2006-11-07 Raytheon Company Micro electro-mechanical system device with piezoelectric thin film actuator
US7446217B2 (en) 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7531679B2 (en) 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7972663B2 (en) * 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7122222B2 (en) 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US7138332B2 (en) * 2003-07-09 2006-11-21 Asm Japan K.K. Method of forming silicon carbide films
US7579496B2 (en) 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US7601860B2 (en) * 2003-10-10 2009-10-13 Advanced Technology Materials, Inc. Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NOT YET ADVISED *

Also Published As

Publication number Publication date
WO2005038871A2 (en) 2005-04-28
US8242032B2 (en) 2012-08-14
US20120156894A1 (en) 2012-06-21
US20050080285A1 (en) 2005-04-14
US20080160174A1 (en) 2008-07-03
WO2005038871A3 (en) 2006-08-31
US8541318B2 (en) 2013-09-24
JP2007508307A (ja) 2007-04-05
GB0607259D0 (en) 2006-05-17
US20110165762A1 (en) 2011-07-07
US7863203B2 (en) 2011-01-04
US7579496B2 (en) 2009-08-25

Similar Documents

Publication Publication Date Title
GB2423084A (en) Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
TW200606169A (en) Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
WO2004010467A3 (en) Low temperature dielectric deposition using aminosilane and ozone
JP6456450B2 (ja) 新規なシクロジシラザン誘導体およびその製造方法、並びにそれを用いたシリコン含有薄膜
JP2019507956A (ja) ケイ素含有膜の堆積のための組成物及びそれを使用した方法
WO2005066386A3 (en) A method and apparatus for forming a high quality low temperature silicon nitride layer
US20060169669A1 (en) Etchant treatment processes for substrate surfaces and chamber surfaces
KR20140074942A (ko) 저온 증착용 활성화된 규소 전구체
EP0935283A3 (en) Silicone polymer insulation film on semiconductor substrate and method for forming the film
WO2002065516A3 (en) Improved process for deposition of semiconductor films
AU2002321553A1 (en) Room temperature curable organopolysiloxane compositions
WO2001040394A3 (de) Selbstvernetzende beschichtungszusammensetzungen auf basis anorganischer fluorhaltiger polykondensate
GB2398673A (en) Method and apparatus for utilizing integrated metrology data as feed-forward data
EP2261390A3 (en) Mechanical enhancer additives for low dielectric films
TW200833865A (en) Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
WO2004044958A3 (en) Composition and method for low temperature deposition of silicon-containing films
CN101002309A (zh) 用于制造晶体管的低热预算氮化硅膜及其制备方法
JP2007508307A5 (enExample)
WO2015190749A1 (en) Novel amino-silyl amine compound and the manufacturing method of dielectric film containing si-n bond by using atomic layer deposition
JP2016534560A5 (enExample)
AU2002320305A1 (en) Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
ATE334938T1 (de) Verfahren zur herstellung von organohalogensilanen aus amorphem silizium
JP6969758B2 (ja) 処理液及び処理方法
JP6722794B2 (ja) 非晶質薄膜の形成方法
GB2393189A (en) Depositing a tantalum film

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)