JP2007508307A - モノシラン誘導体またはジシラン誘導体、および、それを用いたシリコン含有膜の低温蒸着法 - Google Patents
モノシラン誘導体またはジシラン誘導体、および、それを用いたシリコン含有膜の低温蒸着法 Download PDFInfo
- Publication number
- JP2007508307A JP2007508307A JP2006534267A JP2006534267A JP2007508307A JP 2007508307 A JP2007508307 A JP 2007508307A JP 2006534267 A JP2006534267 A JP 2006534267A JP 2006534267 A JP2006534267 A JP 2006534267A JP 2007508307 A JP2007508307 A JP 2007508307A
- Authority
- JP
- Japan
- Prior art keywords
- alkyl
- disilane
- compound according
- silicon
- hnnme
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical class [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 238000000151 deposition Methods 0.000 title description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title description 5
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 32
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 14
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine group Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 8
- -1 silane compound Chemical group 0.000 claims description 38
- 229910008045 Si-Si Inorganic materials 0.000 claims description 23
- 229910006411 Si—Si Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- 229910000077 silane Inorganic materials 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 125000000524 functional group Chemical group 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 125000005913 (C3-C6) cycloalkyl group Chemical group 0.000 claims description 8
- 125000003282 alkyl amino group Chemical group 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 125000004663 dialkyl amino group Chemical group 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 claims description 6
- 125000000623 heterocyclic group Chemical group 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims 4
- 241000233855 Orchidaceae Species 0.000 claims 1
- 125000001475 halogen functional group Chemical group 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 150000004756 silanes Chemical class 0.000 abstract description 5
- 125000005843 halogen group Chemical group 0.000 abstract description 3
- 239000012686 silicon precursor Substances 0.000 abstract description 3
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 238000006467 substitution reaction Methods 0.000 abstract description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 24
- 239000010408 film Substances 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 239000000460 chlorine Substances 0.000 description 11
- 239000002243 precursor Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000004009 13C{1H}-NMR spectroscopy Methods 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 239000000706 filtrate Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 2
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/683,501 US7579496B2 (en) | 2003-10-10 | 2003-10-10 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
| PCT/US2004/032843 WO2005038871A2 (en) | 2003-10-10 | 2004-10-06 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007508307A true JP2007508307A (ja) | 2007-04-05 |
| JP2007508307A5 JP2007508307A5 (enExample) | 2007-12-13 |
Family
ID=34422750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006534267A Withdrawn JP2007508307A (ja) | 2003-10-10 | 2004-10-06 | モノシラン誘導体またはジシラン誘導体、および、それを用いたシリコン含有膜の低温蒸着法 |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US7579496B2 (enExample) |
| JP (1) | JP2007508307A (enExample) |
| GB (1) | GB2423084A (enExample) |
| WO (1) | WO2005038871A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010504958A (ja) * | 2006-09-29 | 2010-02-18 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | シリコン前駆体およびシリコン含有フィルムの低温ｃｖｄのための方法 |
| JP2015015465A (ja) * | 2013-06-26 | 2015-01-22 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | アザ−ポリシラン前駆体、及びそれを含む膜の堆積方法 |
| JP2023521602A (ja) * | 2020-03-31 | 2023-05-25 | インテグリス・インコーポレーテッド | ケイ素ヒドラジド前駆体化合物 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7446217B2 (en) * | 2002-11-14 | 2008-11-04 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
| US7531679B2 (en) * | 2002-11-14 | 2009-05-12 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
| US7601860B2 (en) | 2003-10-10 | 2009-10-13 | Advanced Technology Materials, Inc. | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films |
| US7579496B2 (en) * | 2003-10-10 | 2009-08-25 | Advanced Technology Materials, Inc. | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
| US20050227017A1 (en) * | 2003-10-31 | 2005-10-13 | Yoshihide Senzaki | Low temperature deposition of silicon nitride |
| WO2008128141A2 (en) * | 2007-04-12 | 2008-10-23 | Advanced Technology Materials, Inc. | Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd |
| WO2009006272A1 (en) | 2007-06-28 | 2009-01-08 | Advanced Technology Materials, Inc. | Precursors for silicon dioxide gap fill |
| US8580993B2 (en) * | 2008-11-12 | 2013-11-12 | Air Products And Chemicals, Inc. | Amino vinylsilane precursors for stressed SiN films |
| US8889235B2 (en) * | 2009-05-13 | 2014-11-18 | Air Products And Chemicals, Inc. | Dielectric barrier deposition using nitrogen containing precursor |
| KR101085242B1 (ko) | 2010-03-17 | 2011-11-22 | 엘에스엠트론 주식회사 | 실란 커플링제, 이를 포함하는 동박 및 그 표면처리방법 |
| WO2013177326A1 (en) | 2012-05-25 | 2013-11-28 | Advanced Technology Materials, Inc. | Silicon precursors for low temperature ald of silicon-based thin-films |
| US9337018B2 (en) | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| NL2009754C2 (en) | 2012-11-05 | 2014-05-08 | M4Si B V | Protective cover for a copper containing conductor. |
| JP5925673B2 (ja) * | 2012-12-27 | 2016-05-25 | 東京エレクトロン株式会社 | シリコン膜の成膜方法および成膜装置 |
| TW201522696A (zh) * | 2013-11-01 | 2015-06-16 | Applied Materials Inc | 使用遠端電漿ｃｖｄ技術的低溫氮化矽膜 |
| US11549181B2 (en) | 2013-11-22 | 2023-01-10 | Applied Materials, Inc. | Methods for atomic layer deposition of SiCO(N) using halogenated silylamides |
| US20150303060A1 (en) | 2014-04-16 | 2015-10-22 | Samsung Electronics Co., Ltd. | Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same |
| TWI706957B (zh) | 2015-03-30 | 2020-10-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| TWI753794B (zh) * | 2016-03-23 | 2022-01-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
| US11049714B2 (en) * | 2017-09-19 | 2021-06-29 | Versum Materials Us, Llc | Silyl substituted organoamines as precursors for high growth rate silicon-containing films |
| CN108059133A (zh) * | 2017-12-11 | 2018-05-22 | 宁波爱克创威新材料科技有限公司 | 纳米氮化硅及其制备方法 |
| US11186909B2 (en) * | 2019-08-26 | 2021-11-30 | Applied Materials, Inc. | Methods of depositing low-K films |
| US11447865B2 (en) | 2020-11-17 | 2022-09-20 | Applied Materials, Inc. | Deposition of low-κ films |
| EP4284959A4 (en) * | 2021-01-26 | 2025-04-30 | Entegris, Inc. | High throughput deposition process |
Family Cites Families (27)
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| US5204098A (en) * | 1988-02-16 | 1993-04-20 | The United States Of America As Represented By The Department Of Health And Human Services | Polysaccharide-protein conjugates |
| FR2678621A1 (fr) | 1991-07-02 | 1993-01-08 | Atochem | Procede de preparation de ceramiques en nitrure de bore et de leurs precurseurs a partir de derives de l'hydrazine et les precurseurs ainsi mis en óoeuvre. |
| US5204141A (en) | 1991-09-18 | 1993-04-20 | Air Products And Chemicals, Inc. | Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources |
| FR2693204A1 (fr) * | 1992-08-27 | 1994-01-07 | Atochem Elf Sa | Procédé de préparation en milieu solvant de polysilylhydrazines. |
| US5424095A (en) | 1994-03-07 | 1995-06-13 | Eniricerche S.P.A. | Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors |
| JPH07335753A (ja) * | 1994-06-06 | 1995-12-22 | Sharp Corp | 半導体装置及びその製造方法 |
| JPH0822986A (ja) | 1994-07-05 | 1996-01-23 | Sony Corp | 絶縁膜の成膜方法 |
| JP3282769B2 (ja) | 1994-07-12 | 2002-05-20 | ソニー株式会社 | 半導体装置の製造方法 |
| TW285753B (enExample) | 1995-01-04 | 1996-09-11 | Air Prod & Chem | |
| US5939333A (en) * | 1996-05-30 | 1999-08-17 | Micron Technology, Inc. | Silicon nitride deposition method |
| US6383955B1 (en) | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
| US6365231B2 (en) * | 1998-06-26 | 2002-04-02 | Kabushiki Kaisha Toshiba | Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process |
| JP2000080476A (ja) | 1998-06-26 | 2000-03-21 | Toshiba Corp | 気相成長方法および気相成長装置およびハロゲン化アンモニウム除去装置 |
| US6013235A (en) | 1999-07-19 | 2000-01-11 | Dow Corning Corporation | Conversion of direct process high-boiling residue to monosilanes |
| EP1266054B1 (en) * | 2000-03-07 | 2006-12-20 | Asm International N.V. | Graded thin films |
| US6630413B2 (en) | 2000-04-28 | 2003-10-07 | Asm Japan K.K. | CVD syntheses of silicon nitride materials |
| JP4021653B2 (ja) | 2001-11-30 | 2007-12-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ｃｖｄ法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
| JP4116283B2 (ja) | 2001-11-30 | 2008-07-09 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法 |
| US7132723B2 (en) | 2002-11-14 | 2006-11-07 | Raytheon Company | Micro electro-mechanical system device with piezoelectric thin film actuator |
| US7446217B2 (en) | 2002-11-14 | 2008-11-04 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films |
| US7531679B2 (en) | 2002-11-14 | 2009-05-12 | Advanced Technology Materials, Inc. | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
| US7972663B2 (en) * | 2002-12-20 | 2011-07-05 | Applied Materials, Inc. | Method and apparatus for forming a high quality low temperature silicon nitride layer |
| US7172792B2 (en) * | 2002-12-20 | 2007-02-06 | Applied Materials, Inc. | Method for forming a high quality low temperature silicon nitride film |
| US7122222B2 (en) | 2003-01-23 | 2006-10-17 | Air Products And Chemicals, Inc. | Precursors for depositing silicon containing films and processes thereof |
| US7138332B2 (en) * | 2003-07-09 | 2006-11-21 | Asm Japan K.K. | Method of forming silicon carbide films |
| US7579496B2 (en) | 2003-10-10 | 2009-08-25 | Advanced Technology Materials, Inc. | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
| US7601860B2 (en) * | 2003-10-10 | 2009-10-13 | Advanced Technology Materials, Inc. | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films |
-
2003
- 2003-10-10 US US10/683,501 patent/US7579496B2/en not_active Expired - Lifetime
-
2004
- 2004-10-06 GB GB0607259A patent/GB2423084A/en not_active Withdrawn
- 2004-10-06 JP JP2006534267A patent/JP2007508307A/ja not_active Withdrawn
- 2004-10-06 WO PCT/US2004/032843 patent/WO2005038871A2/en not_active Ceased
-
2008
- 2008-01-24 US US12/019,557 patent/US7863203B2/en not_active Expired - Lifetime
-
2011
- 2011-01-04 US US12/984,346 patent/US8242032B2/en not_active Expired - Fee Related
-
2012
- 2012-02-09 US US13/369,810 patent/US8541318B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010504958A (ja) * | 2006-09-29 | 2010-02-18 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | シリコン前駆体およびシリコン含有フィルムの低温ｃｖｄのための方法 |
| JP2015015465A (ja) * | 2013-06-26 | 2015-01-22 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | アザ−ポリシラン前駆体、及びそれを含む膜の堆積方法 |
| US9796739B2 (en) | 2013-06-26 | 2017-10-24 | Versum Materials Us, Llc | AZA-polysilane precursors and methods for depositing films comprising same |
| JP2023521602A (ja) * | 2020-03-31 | 2023-05-25 | インテグリス・インコーポレーテッド | ケイ素ヒドラジド前駆体化合物 |
| JP7400120B2 (ja) | 2020-03-31 | 2023-12-18 | インテグリス・インコーポレーテッド | ケイ素ヒドラジド前駆体化合物 |
| JP2024045097A (ja) * | 2020-03-31 | 2024-04-02 | インテグリス・インコーポレーテッド | ケイ素ヒドラジド前駆体化合物 |
| JP7661455B2 (ja) | 2020-03-31 | 2025-04-14 | インテグリス・インコーポレーテッド | ケイ素ヒドラジド前駆体化合物 |
| KR102889429B1 (ko) * | 2020-03-31 | 2025-11-24 | 엔테그리스, 아이엔씨. | 규소 히드라지도 전구체 화합물 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005038871A2 (en) | 2005-04-28 |
| US8242032B2 (en) | 2012-08-14 |
| US20120156894A1 (en) | 2012-06-21 |
| US20050080285A1 (en) | 2005-04-14 |
| US20080160174A1 (en) | 2008-07-03 |
| WO2005038871A3 (en) | 2006-08-31 |
| GB2423084A (en) | 2006-08-16 |
| US8541318B2 (en) | 2013-09-24 |
| GB0607259D0 (en) | 2006-05-17 |
| US20110165762A1 (en) | 2011-07-07 |
| US7863203B2 (en) | 2011-01-04 |
| US7579496B2 (en) | 2009-08-25 |
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