WO2004010467A3 - Low temperature dielectric deposition using aminosilane and ozone - Google Patents

Low temperature dielectric deposition using aminosilane and ozone Download PDF

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Publication number
WO2004010467A3
WO2004010467A3 PCT/US2003/022168 US0322168W WO2004010467A3 WO 2004010467 A3 WO2004010467 A3 WO 2004010467A3 US 0322168 W US0322168 W US 0322168W WO 2004010467 A3 WO2004010467 A3 WO 2004010467A3
Authority
WO
WIPO (PCT)
Prior art keywords
aminosilane
silicon
low temperature
ozone
films
Prior art date
Application number
PCT/US2003/022168
Other languages
French (fr)
Other versions
WO2004010467A2 (en
Inventor
Yoshihide Senzaki
Original Assignee
Aviza Tech Inc
Yoshihide Senzaki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US39674602P priority Critical
Priority to US60/396,746 priority
Application filed by Aviza Tech Inc, Yoshihide Senzaki filed Critical Aviza Tech Inc
Publication of WO2004010467A2 publication Critical patent/WO2004010467A2/en
Publication of WO2004010467A3 publication Critical patent/WO2004010467A3/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308Oxynitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Abstract

This invention describes a method of depositing dielectric layers or films with good step coverage and ability to fill high-aspect ratio device structures at low temperature (20 - 400 C) by CVD processes through the use of aminosilane or silicon alkylamide compounds as the silicon precursor with an oxidizerthat includes ozone. The present invention further provides a method of depositing silicon oxynitride (SiOxNy) films at low temperatures using aminosilane or silicon alkylamide compounds as a silicon precursor, with an oxidizer that includes ozone, and ammonia (NH3).
PCT/US2003/022168 2002-07-19 2003-07-15 Low temperature dielectric deposition using aminosilane and ozone WO2004010467A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US39674602P true 2002-07-19 2002-07-19
US60/396,746 2002-07-19

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004523447A JP2005534179A (en) 2002-07-19 2003-07-15 Low dielectric deposition method using an aminosilane and ozone
AU2003256559A AU2003256559A1 (en) 2002-07-19 2003-07-15 Low temperature dielectric deposition using aminosilane and ozone

Publications (2)

Publication Number Publication Date
WO2004010467A2 WO2004010467A2 (en) 2004-01-29
WO2004010467A3 true WO2004010467A3 (en) 2004-06-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/022168 WO2004010467A2 (en) 2002-07-19 2003-07-15 Low temperature dielectric deposition using aminosilane and ozone

Country Status (5)

Country Link
JP (1) JP2005534179A (en)
CN (1) CN1643674A (en)
AU (1) AU2003256559A1 (en)
TW (1) TW200403726A (en)
WO (1) WO2004010467A2 (en)

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US9384987B2 (en) 2012-04-04 2016-07-05 Asm Ip Holding B.V. Metal oxide protective layer for a semiconductor device
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9412564B2 (en) 2013-07-22 2016-08-09 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10361201B2 (en) 2016-01-18 2019-07-23 Asm Ip Holding B.V. Semiconductor structure and device formed using selective epitaxial process

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US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7875312B2 (en) 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US8530361B2 (en) 2006-05-23 2013-09-10 Air Products And Chemicals, Inc. Process for producing silicon and oxide films from organoaminosilane precursors
KR100888186B1 (en) * 2007-08-31 2009-03-10 주식회사 테스 Method of forming an insulating film
JP4959733B2 (en) 2008-02-01 2012-06-27 東京エレクトロン株式会社 Thin film forming method, a thin film forming apparatus and program
US8129555B2 (en) * 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
US8197915B2 (en) * 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9128218B2 (en) 2011-12-29 2015-09-08 Visera Technologies Company Limited Microlens structure and fabrication method thereof
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US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
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US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
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KR20160059810A (en) 2014-11-19 2016-05-27 에이에스엠 아이피 홀딩 비.브이. Method of depositing thin film
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US9384987B2 (en) 2012-04-04 2016-07-05 Asm Ip Holding B.V. Metal oxide protective layer for a semiconductor device
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
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US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US10361201B2 (en) 2016-01-18 2019-07-23 Asm Ip Holding B.V. Semiconductor structure and device formed using selective epitaxial process
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Also Published As

Publication number Publication date
AU2003256559A1 (en) 2004-02-09
CN1643674A (en) 2005-07-20
AU2003256559A8 (en) 2004-02-09
WO2004010467A2 (en) 2004-01-29
JP2005534179A (en) 2005-11-10
TW200403726A (en) 2004-03-01

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